847 resultados para All-optical flip-flops


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Parametric interactions in nonlinear crystals represent a powerful tool in the optical manipulation of information, both in the classical and the quantum regime. Here, we analyze in detail classical and quantum aspects of three-and five-mode parametric interactions in chi(2) nonlinear crystals. The equations of motion are explicitly derived and then solved within the parametric approximation. We describe several applications, including holography, all-optical gates, generation of entanglement, and telecloning. Experimental results on the photon distributions and correlations of the generated beams are also reported and discussed.

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Context. Comet 67P/Churyumov-Gerasimenko is the target of the European Space Agency Rosetta spacecraft rendez-vous mission. Detailed physical characteristation of the comet before arrival is important for mission planning as well as providing a test bed for ground-based observing and data-analysis methods. Aims: To conduct a long-term observational programme to characterize the physical properties of the nucleus of the comet, via ground-based optical photometry, and to combine our new data with all available nucleus data from the literature. Methods: We applied aperture photometry techniques on our imaging data and combined the extracted rotational lightcurves with data from the literature. Optical lightcurve inversion techniques were applied to constrain the spin state of the nucleus and its broad shape. We performed a detailed surface thermal analysis with the shape model and optical photometry by incorporating both into the new Advanced Thermophysical Model (ATPM), along with all available Spitzer 8-24 μm thermal-IR flux measurements from the literature. Results: A convex triangular-facet shape model was determined with axial ratios b/a = 1.239 and c/a = 0.819. These values can vary by as much as 7% in each axis and still result in a statistically significant fit to the observational data. Our best spin state solution has Psid = 12.76137 ± 0.00006 h, and a rotational pole orientated at Ecliptic coordinates λ = 78°(±10°), β = + 58°(±10°). The nucleus phase darkening behaviour was measured and best characterized using the IAU HG system. Best fit parameters are: G = 0.11 ± 0.12 and HR(1,1,0) = 15.31 ± 0.07. Our shape model combined with the ATPM can satisfactorily reconcile all optical and thermal-IR data, with the fit to the Spitzer 24 μm data taken in February 2004 being exceptionally good. We derive a range of mutually-consistent physical parameters for each thermal-IR data set, including effective radius, geometric albedo, surface thermal inertia and roughness fraction. Conclusions: The overall nucleus dimensions are well constrained and strongly imply a broad nucleus shape more akin to comet 9P/Tempel 1, rather than the highly elongated or "bi-lobed" nuclei seen for comets 103P/Hartley 2 or 8P/Tuttle. The derived low thermal inertia of

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An ultra-relativistic electron beam propagating through a high-Z solid triggersan electromagnetic cascade, whereby a large number of high-energy photons andelectron–positron pairs are produced mainly via the bremsstrahlung and Bethe–Heitler processes, respectively. These mechanisms are routinely used to generatepositron beams in conventional accelerators such as the electron–positron collider(LEP). Here we show that the application of similar physical mechanisms to a laserdrivenelectron source allows for the generation of high-quality positron beams in amuch more compact and cheaper configuration. We anticipate that the applicationof these results to the next generation of lasers might open the pathway for therealization of an all-optical high-energy electron–positron collider.

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All-optical approaches to particle acceleration are currently attracting a significant research effort internationally. Although characterized by exceptional transverse and longitudinal emittance, laser-driven ion beams currently have limitations in terms of peak ion energy, bandwidth of the energy spectrum and beam divergence. Here we introduce the concept of a versatile, miniature linear accelerating module, which, by employing laser-excited electromagnetic pulses directed along a helical path surrounding the laser-accelerated ion beams, addresses these shortcomings simultaneously. In a proof-of-principle experiment on a university-scale system, we demonstrate post-acceleration of laser-driven protons from a flat foil at a rate of 0.5 GeVm^-1, already beyond what can be sustained by conventional accelerator technologies, with dynamic beam collimation and energy selection. These results open up new opportunities for the development of extremely compact and cost-effective ion accelerators for both established and innovative applications.

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In this thesis we perform a detailed analysis of the state of polarization (SOP) of light scattering process using a concatenation of ber-coil based polarization controllers (PCs). We propose a polarization-mode dispersion (PMD) emulator, built through the concatenation of bercoil based PCs and polarization-maintaining bers (PMFs), capable of generate accurate rst- and second-order PMD statistics. We analyze the co-propagation of two optical waves inside a highbirefringence ber. The evolution along the ber of the relative SOP between the two signals is modeled by the de nition of the degree of co-polarization parameter. We validate the model for the degree of co-polarization experimentally, exploring the polarization dependence of the four-wave mixing e ect into a ber with high birefringence. We also study the interaction between signal and noise mediated by Kerr e ect in optical bers. A model accurately describing ampli ed spontaneous emission noise in systems with distributed Raman gain is derived. We show that the noise statistics depends on the propagation distance and on the signal power, and that for distances longer than 120 km and signal powers higher than 6 mW it deviates signi catively from the Gaussian distribution. We explore the all-optical polarization control process based on the stimulated Raman scattering e ect. Mapping parameters like the degree of polarization (DOP), we show that the preferred ampli cation of one particular polarization component of the signal allows a polarization pulling over a wavelength range of 60 nm. The e ciency of the process is higher close to the maximum Raman gain wavelength, where the DOP is roughly constant for a wavelength range of 15 nm. Finally, we study the polarization control in quantum key distribution (QKD) systems with polarization encoding. A model for the quantum bit error rate estimation in QKD systems with time-division multiplexing and wavelength-division multiplexing based polarization control schemes is derived.

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Esta tese tem como foco principal a análise dos principais tipos de amplificação óptica e algumas de suas aplicações em sistemas de comunicação óptica. Para cada uma das tecnologias abordadas, procurou-se definir o estado da arte bem como identificar as oportunidades de desenvolvimento científico relacionadas. Os amplificadores para os quais foi dirigido alguma atenção neste documento foram os amplificadores em fibra dopada com Érbio (EDFA), os amplificadores a semicondutor (SOA) e os amplificadores de Raman (RA). Este trabalho iniciou-se com o estudo e análise dos EDFA’s. Dado o interesse científico e económico que estes amplificadores têm merecido, apenas poucos nichos de investigação estão ainda em aberto. Dentro destes, focá-mo-nos na análise de diferentes perfis de fibra óptica dopada de forma a conseguir uma optimização do desempenho dessas fibras como sistemas de amplificação. Considerando a fase anterior do trabalho como uma base de modelização para sistemas de amplificação com base em fibra e dopantes, evoluiu-se para amplificadores dopados mas em guias de onda (EDWA). Este tipo de amplificador tenta reduzir o volume físico destes dispositivos, mantendo as suas características principais. Para se ter uma forma de comparação de desempenho deste tipo de amplificador com os amplificadores em fibra, foram desenvolvidos modelos de caixa preta (BBM) e os seus parâmetros afinados por forma a termos uma boa modelização e posterior uso deste tipo de amplificiadores em setups de simulação mais complexos. Depois de modelizados e compreendidos os processo em amplificadores dopados, e com vista a adquirir uma visão global comparativa, foi imperativo passar pelo estudo dos processos de amplificação paramétrica de Raman. Esse tipo de amplificação, sendo inerente, ocorre em todas as bandas de propagação em fibra e é bastante flexível. Estes amplificadores foram inicialmente modelizados, e algumas de suas aplicações em redes passivas de acesso foram estudadas. Em especial uma série de requisitos, como por exemplo, a gama de comprimentos de onda sobre os quais existem amplificação e os altos débitos de perdas de inserção, nos levaram à investigação de um processo de amplificação que se ajustasse a eles, especialmente para buscar maiores capacidades de amplificação (nomeadamente longos alcances – superiores a 100 km – e altas razões de divisão – 1:512). Outro processo investigado foi a possibilidade de flexibilização dos parâmetros de comprimento de onda de ganho sem ter que mudar as caractísticas da bomba e se possível, mantendo toda a referenciação no transmissor. Este processo baseou-se na técnica de clamping de ganho já bastante estudada, mas com algumas modificações importantes, nomeadamente a nível do esquema (reflexão apenas num dos extremos) e da modelização do processo. O processo resultante foi inovador pelo recurso a espalhamentos de Rayleigh e Raman e o uso de um reflector de apenas um dos lados para obtenção de laser. Este processo foi modelizado através das equações de propagação e optimizado, tendo sido demonstrado experimentalmente e validado para diferentes tipos de fibras. Nesta linha, e dada a versatilidade do modelo desenvolvido, foi apresentada uma aplicação mais avançada para este tipo de amplificadores. Fazendo uso da sua resposta ultra rápida, foi proposto e analisado um regenerador 2R e analisada por simulação a sua gama de aplicação tendo em vista a sua aplicação sistémica. A parte final deste trabalho concentrou-se nos amplificadores a semiconductor (SOA). Para este tipo de amplificador, os esforços foram postos mais a nível de aplicação do que a nível de sua modelização. As aplicações principais para estes amplificadores foram baseadas em clamping óptico do ganho, visando a combinação de funções lógicas essenciais para a concepção de um latch óptico com base em componentes discretos. Assim, com base num chip de ganho, foi obtido uma porta lógica NOT, a qual foi caracterizada e demonstrada experimentalmente. Esta foi ainda introduzida num esquema de latching de forma a produzir um bi-estável totalmente óptico, o qual também foi demonstrado e caracterizado. Este trabalho é finalizado com uma conclusão geral relatando os subsistemas de amplificação e suas aplicacações.

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The rapid developments in fields such as fibre optic communication engineering and integrated optical electronics have expanded the interest and have increased the expectations about guided wave optics, in which optical waveguides and optical fibres play a central role. The technology of guided wave photonics now plays a role in generating information (guided-wave sensors) and processing information (spectral analysis, analog-to-digital conversion and other optical communication schemes) in addition to its original application of transmitting information (fibre optic communication). Passive and active polymer devices have generated much research interest recently because of the versatility of the fabrication techniques and the potential applications in two important areas – short distant communication network and special functionality optical devices such as amplifiers, switches and sensors. Polymer optical waveguides and fibres are often designed to have large cores with 10-1000 micrometer diameter to facilitate easy connection and splicing. Large diameter polymer optical fibres being less fragile and vastly easier to work with than glass fibres, are attractive in sensing applications. Sensors using commercial plastic optical fibres are based on ideas already used in silica glass sensors, but exploiting the flexible and cost effective nature of the plastic optical fibre for harsh environments and throw-away sensors. In the field of Photonics, considerable attention is centering on the use of polymer waveguides and fibres, as they have a great potential to create all-optical devices. By attaching organic dyes to the polymer system we can incorporate a variety of optical functions. Organic dye doped polymer waveguides and fibres are potential candidates for solid state gain media. High power and high gain optical amplification in organic dye-doped polymer waveguide amplifier is possible due to extremely large emission cross sections of dyes. Also, an extensive choice of organic dye dopants is possible resulting in amplification covering a wide range in the visible region.

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This paper presents the evaluation in power consumption of gated clocks pipelined circuits with different register configurations in Virtex-based FPGA devices. Power impact of a gated clock circuitry aimed at reducing flip-flops output rate at the bit level is studied. Power performance is also given for pipeline stages based on the implementation of a double edge-triggered flip-flop. Using a pipelined Cordic Core circuit as an example, this study did not find evidence in power benefits either when gated clock at the bit-level or double-edge triggered flip-flops used when synthesized with FPGA logic resources.

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Single-phase perovskite structure Pb(1-x)Ba(x)TiO(3) thin films (x = 0.30, 0.50 and 0.70) were deposited on Pt/Ti/SiO(2)/Si substrates by the spin-coating technique. The dielectric study reveals that the thin films undergo a diffuse type ferroelectric phase transition, which shows a broad peak. An increase of the diffusivity degree with the increasing Barium contents was observed, and it was associated to a grain decrease in the studied composition range. The temperature dependence of the phonon frequencies was used to characterize the phase transition temperatures. Raman modes persist above tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of breakdown of the local cubic symmetry by chemical disorder. The absence of a well-defined transition temperature and the presence of broad bands in some interval temperature above FE-PE phase transition temperature Suggested a diffuse type phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in these thin films. The leakage Current density of the PBT thin films was studied at different temperatures and the data follow the Schottky emission model. Through this analysis the Schottky barrier height values 0.75, 0.53 and 0.34 eV were obtained to the PBT70, PBT50 and PBT30 thin films, respectively. (C) 2008 Elsevier Ltd. All rights reserved.

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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We have carried out dielectric and Raman spectroscopy studies at the 298-623 K temperature range in polycrystalline Pb0.70Sr0.30TiO3 thin films grown by a soft chemical method. The diffuse phase-transition behavior of the thin films was observed by means of the dielectric constant versus temperature curves, which show a broad peak. Such behavior was confirmed later by Raman spectroscopy measurements up to 823 K, indicating that a diffuselike phase transition takes place at around 548-573 K. The damping factor of the E(1TO) soft mode was calculated using the damped simple harmonic oscillator model. on the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature although all optical modes should be Raman inactive. The origin of these modes was interpreted in terms of a breakdown of the microscopic local cubic symmetry by chemical disorder. The lack of a well-defined transition temperature and the presence of broad bands at some temperature interval above the ferroelectric-paraelectric phase-transition temperature suggested a diffuse nature of the phase transition. This result corroborates the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in this thin film. (C) 2004 American Institute of Physics.

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Antimony glasses based on the composition Sb2O3-SbPO4 were prepared and characterized. The samples present high refractive index, good transmission from 380 to 2000 nm, and high thermal stability. The nonlinear refractive index, n(2), of the samples was studied using the optical Kerr shutter technique at 800 nm. The third-order correlation signals between pump and probe pulses indicate ultrafast response (<100 fs) for all compositions. Enhancement of n(2) was observed by adding lead oxide to the Sb2O3-SbPO4 composition. Large values of n(2)approximate to10(-14) cm(2)/W and negligible two-photon absorption coefficients (smaller than 0.01 cm/GW) were determined for all samples. The glass compositions studied present appropriate figure-of-merit for all-optical switching applications. (C) 2005 American Institute of Physics.

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Single-phase perovskite structure BaZrxTi1-xO3 (BZT) (0.05less than or equal toxless than or equal to0.25) thin films were deposited on Pt-Ti-SiO2-Si substrates by the spin-coating technique. The structural modifications in the thin films were studied using x-ray diffraction and micro-Raman scattering techniques. Lattice parameters calculated from x-ray data indicate an increase in lattice (a axis) with the increasing content of zirconium in these films. Such Zr substitution also result in variations of the phonon mode wave numbers, especially those of lower wave numbers, for BaZrxTi1-xO3 thin films, corroborate to the structural change caused by the zirconium doping. on the other hand, Raman modes persist above structural phase transition, although all optical modes should be Raman inactive in the cubic phase. The origin of these modes must be interpreted as a function of a local breakdown of the cubic symmetry, which could be a result of some kind of disorder. The BZT thin films exhibited a satisfactory dielectric constant close to 181-138, and low dielectric loss tan delta<0.03 at the frequency of 1 kHz. The leakage current density of the BZT thin films was studied at elevated temperatures and the data obey the Schottky emission model. Through this analysis the Schottky barrier height values 0.68, 1.39, and 1.24 eV were estimated to the BZT5, BZT15, and BZT25 thin films, respectively. (C) 2004 American Institute of Physics.

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We have studied the phase transition behavior of Pb0.76Ca0.24TiO3 thin films using Raman scattering and dielectric measurement techniques. We also have studied the leakage current conduction mechanism as a function of temperature for these thin films on platinized silicon substrates. A Pb0.76Ca0.24TiO3 thin film was prepared using a soft chemical process, called the polymeric precursor method. The results showed that the dependence of the dielectric constant upon the frequency does not reveal any relaxor behavior. However, a diffuse character-type phase transition was observed upon transformation from a cubic paraelectric phase to a tetragonal ferroelectric phase. The temperature dependency of Raman scattering spectra was investigated through the ferroelectric phase transition. The soft mode showed a marked dependence on temperature and its disappearance at about 598 K. on the other hand, Raman modes persist above the tetragonal to cubic phase transition temperature, although all optical modes should be Raman inactive above the phase transition temperature. The origin of these modes must be interpreted in terms of a local breakdown of cubic symmetry by some kind of disorder. The lack of a well-defined transition temperature suggested a diffuse-type phase transition. This result corroborate the dielectric constant versus temperature data, which showed a broad ferroelectric phase transition in the thin film. The leakage current density of the PCT24 thin film was studied at elevated temperatures, and the data were well fitted by the Schottky emission model. The Schottky barrier height of the PCT24 thin film was estimated to be 1.49 eV. (C) 2003 American Institute of Physics.