Single-particle probing of edge-state formation in a graphene nanoribbon

We investigate the effect of a perpendicular magnetic field on the single-particle charging spectrum of a graphene quantum dot embedded inline with a nanoribbon. We observe uniform shifts in the single-particle spectrum which coincide with peaks in the magnetoconductance, implicating Landau level condensation and edge state formation as the mechanism underlying magnetic field-enhanced transmission through graphene nanostructures. The experimentally determined ratio of bulk to edge states is supported by single-particle band-structure simulations, while a fourfold beating of the Coulomb blockade transmission amplitude points to many-body interaction effects during Landau level condensation of the ν=0 state. © 2012 American Physical Society.

Highly chiral-selective growth of single-walled carbon nanotubes with a simple monometallic Co catalyst

We report on the growth of single-walled carbon nanotubes from a monometallic Co catalyst on an oxidized Si wafer support by the most simple growth recipe (vacuum annealing, growth by undiluted C 2H 2). Nevertheless, multiwavelength Raman spectroscopy and transmission electron spectroscopy show a remarkable selectivity for chiral indices and thus, e.g., high abundance with a single chirality representing 58% of all semiconducting tubes. In situ x-ray photoelectron spectroscopy monitors the catalyst chemistry during carbon nanotube growth and shows interfacial Co-Si interactions that may help to stabilize the nanoparticle/nanotube diameter. We outline a two-mechanism model explaining the selective growth. © 2012 American Physical Society.

Magnetophonon resonance in graphite: High-field Raman measurements and electron-phonon coupling contributions

We perform Raman scattering experiments on natural graphite in magnetic fields up to 45 T, observing a series of peaks due to interband electronic excitations over a much broader magnetic field range than previously reported. We also explore electron-phonon coupling in graphite via magnetophonon resonances. The Raman G peak shifts and splits as a function of magnetic field, due to the magnetically tuned coupling of the E 2g optical phonons with the K- and H-point inter-Landau-level excitations. The analysis of the observed anticrossing behavior allows us to determine the electron-phonon coupling for both K- and H-point carriers. In the highest field range (>35 T) the G peak narrows due to suppression of electron-phonon interaction. © 2012 American Physical Society.

The Gaussian mixture MCMC particle algorithm for dynamic cluster tracking

We present a novel filtering algorithm for tracking multiple clusters of coordinated objects. Based on a Markov chain Monte Carlo (MCMC) mechanism, the new algorithm propagates a discrete approximation of the underlying filtering density. A dynamic Gaussian mixture model is utilized for representing the time-varying clustering structure. This involves point process formulations of typical behavioral moves such as birth and death of clusters as well as merging and splitting. For handling complex, possibly large scale scenarios, the sampling efficiency of the basic MCMC scheme is enhanced via the use of a Metropolis within Gibbs particle refinement step. As the proposed methodology essentially involves random set representations, a new type of estimator, termed the probability hypothesis density surface (PHDS), is derived for computing point estimates. It is further proved that this estimator is optimal in the sense of the mean relative entropy. Finally, the algorithm's performance is assessed and demonstrated in both synthetic and realistic tracking scenarios. © 2012 Elsevier Ltd. All rights reserved.

Calculation of point defects in rutile TiO 2 by the screened-exchange hybrid functional

The formation energies of the oxygen vacancy and titanium interstitial in rutile TiO 2 were calculated by the screened-exchange (sX) hybrid density functional method, which gives a band gap of 3.1 eV, close to the experimental value. The oxygen vacancy gives rise to a gap state lying 0.7 eV below the conduction band edge, whose charge density is localized around the two of three Ti atoms next to the vacancy. The Ti interstitial (Ti int) generates four defect states in the gap, whose unpaired electrons lie on the interstitial and the adjacent Ti 3d orbitals. The formation energy for the neutral oxygen vacancy is 1.9 eV for the O-poor chemical potential. The neutral Ti interstitial has a lower formation energy than the O vacancy under O-poor conditions. This indicates that both the O vacancy and Ti int are relevant for oxygen deficiency in rutile TiO 2 but the O vacancy will dominate under O-rich conditions. This resolves questions about defect localization and defect predominance in the literature. © 2012 American Physical Society.

Tsunami wave runup on the clustered islands using boussinesq-type model

This paper describes the implementation of the Boussinesq-type model and extends its application to the tsunami wave runup on the clustered islands (multiple adjacent conical islands), in turn, an extensively validated two-dimensional Boussinesq-type model is employed to examine the interaction between a propagating solitary wave and multiple idealised conical islands, with particular emphasis on a combination effect of two adjustable parameters for spacing interval/diameter ratio between the adjacent conical islands, S/D, and the rotating angle of the structural configuration,θ on maximum soliton runup heights. An extensive parameter study concerning the combination effect of alteringθ and S/D on the maximum soliton runup with the multi-conical islands is subsequently carried out and the distributions of the maximum runup heights on each conical island are obtained and compared for the twin-island cases. The worst case study is performed for each case in respect of the enhancement in the maximum wave runup heights by the multi-conical islands. It is found that the nonlinear wave diffraction, reflection and refraction play a significant role in varying the maximum soliton runup heights on multiconical islands. The comparatively large maximum soliton runups are generally predicted for the merged and bottom mounted clusteredislands. Furthermore, the joints of the clustered-merged islands are demonstrated to suffer the most of the tsunami wave attack. The conical islands that position in the shadow regions behind the surrounding islands are found to withstand relatively less extreme wave impact. Although, these numerical investigations are considerable simplifications of the multi conical islands, they give a critical insight into certain important hydrodynamic characteristics of the interaction between an extreme wave event and a group of clustered conical islands, and thus providing a useful engineering guidance for extreme wave mitigation and coastal development. Copyright © 2012 by the International Society of Offshore and Polar Engineers (ISOPE).

Investigation of the poro-elastic response of seabed to solitary

A numerical model is established and validated to study the behavior of porous seabed under solitary wave propagation. Using Biot's poro-elastic theory, the problem is formulated as a two dimensional plane strain problem, and it is modelled using the Finite Element Method. The responses due to the solitary wave are compared with those of linear waves of the same height. It is found that regardless of the wave period, stresses due to solitary waves are generally larger. This indicates a higher potential for shear failure at the seabed under solitary waves. Implications on liquefaction need further investigation. Copyright © 2012 by the International Society of Offshore and Polar Engineers (ISOPE).

Nucleation, growth, and control of ferroelectric-ferroelastic domains in thin polycrystalline films

The unique response of ferroic materials to external excitations facilitates them for diverse technologies, such as nonvolatile memory devices. The primary driving force behind this response is encoded in domain switching. In bulk ferroics, domains switch in a two-step process: nucleation and growth. For ferroelectrics, this can be explained by the Kolmogorov-Avrami-Ishibashi (KAI) model. Nevertheless, it is unclear whether domains remain correlated in finite geometries, as required by the KAI model. Moreover, although ferroelastic domains exist in many ferroelectrics, experimental limitations have hindered the study of their switching mechanisms. This uncertainty limits our understanding of domain switching and controllability, preventing thin-film and polycrystalline ferroelectrics from reaching their full technological potential. Here we used piezoresponse force microscopy to study the switching mechanisms of ferroelectric-ferroelastic domains in thin polycrystalline Pb 0.7Zr0.3TiO3 films at the nanometer scale. We have found that switched biferroic domains can nucleate at multiple sites with a coherence length that may span several grains, and that nucleators merge to form mesoscale domains, in a manner consistent with that expected from the KAI model. © 2012 American Physical Society.

快速生长导致转“全鱼”生长激素基因鲤鱼临界游泳速度的降低

进化生物学研究表明,快速生长赋予生物的优势与劣势之间存在权衡.硬骨鱼类的生长率与游泳能力之间也存在这种权衡.本研究提出假说认为,快速生长将导致转基因鱼游泳能力减弱.比较F3代转“全鱼”生长激素基因黄河鲤与其对照鱼的生长和临界游泳速度,表明转基因鱼的平均体重是对照鱼的1.4～1.9倍,平均特定生长率比对照鱼高出6%～10%,而其绝对临界游泳速度和相对临界游泳速度的平均值分别比对照鱼低22%和24%.本研究暗示,具有快速生长效应的转基因黄河鲤表现出低劣的游泳能力,这也证实了生长率和游泳能力之间存在权衡,即同一

Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si

The redistribution of fluorine during solid phase epitaxial regrowth (SPER) of preamorphized Si has been experimentally investigated, explained, and simulated, for different F concentrations and temperatures. We demonstrate, by a detailed analysis and modeling of F secondary ion mass spectrometry chemical-concentration profiles, that F segregates in amorphous Si during SPER by splitting in three possible states: (i) a diffusive one that migrates in amorphous Si; (ii) an interface segregated state evidenced by the presence of a F accumulation peak at the amorphous-crystal interface; (iii) a clustered F state. The interplay among these states and their roles in the F incorporation into crystalline Si are fully described. It is shown that diffusive F migrates by a trap limited diffusion mechanism and also interacts with the advancing interface by a sticking-release dynamics that regulates the amount of F segregated at the interface. We demonstrate that this last quantity determines the regrowth rate through an exponential law. On the other hand we show that neither the diffusive F nor the one segregated at the interface can directly incorporate into the crystal but F has to cluster in the amorphous phase before being incorporated in the crystal, in agreement with recent experimental observations. The trends of the model parameters as a function of the temperature are shown and discussed obtaining a clear energetic scheme of the F redistribution and incorporation in preamorphized Si. The above physical understanding and the model could have a strong impact on the use of F as a tool for optimizing the doping profiles in the fabrication of ultrashallow junctions. © 2010 The American Physical Society.

Enhanced down conversion of photons emitted by photoexcited Er xY2-xSi2O7 films grown on silicon

Photon cutting with efficiencies up to 400% is demonstrated in Erx Y2-x Si2 O7 films grown on Si and its concentration dependence is analyzed. The cutting is the result of cross-energy-transfer processes occurring within a single rare earth (Er3+) acting as both sensitizer and activator. Similarities with upconversion are revealed and possible applications in solar cells are discussed. © 2010 The American Physical Society.