Inter-decadal climate variability in the Southern Hemisphere: evidence from Tasmanian tree rings over the past three millennia

EXTRACT (SEE PDF FOR FULL ABSTRACT): The characterization of inter-decadal climate variability in the Southern Hemisphere is severely constrained by the shortness of the instrumental climate records. To help relieve this constraint, we have developed and analyzed a reconstruction of warm-season (November-April) temperatures from Tasmanian tree rings that now extends back to 800 BC. A detailed analysis of this reconstruction in the time and frequency domains indicates that much of the inter-decadal variability is principally confined to four frequency bands with mean periods of 31, 57, 77, and 200 years. ... In so doing, we show how a future greenhouse warming signal over Tasmania could be masked by these natural oscillations unless they are taken into account.

The development of turbine exit flow in a swan-necked inter-stage diffuser

This paper describes both the migration and dissipation of flow phenomena downstream of a transonic high-pressure turbine stage. The geometry of the HP stage exit duct considered is a swan-necked diffuser similar to those likely to be used in future engine designs. The paper contains results both from an experimental programme in a turbine test facility and from numerical predictions. Experimental data was acquired using three fast-response aerodynamic probes capable of measuring Mach number, whirl angle, pitch angle, total pressure and static pressure. The probes were used to make time-resolved area traverses at two axial locations downstream of the rotor trailing edge. A 3D time-unsteady viscous Navier-Stokes solver was used for the numerical predictions. The unsteady exit flow from a turbine stage is formed from rotordependent phenomena (such as the rotor wake, the rotor trailing edge recompression shock, the tip-leakage flow and the hub secondary flow) and vane-rotor interaction dependant phenomena. This paper describes the time-resolved behaviour and three-dimensional migration paths of both of these phenomena as they convect downstream. It is shown that the inlet flow to a downstream vane is dominated by two corotating vortices, the first caused by the rotor tip-leakage flow and the second by the rotor hub secondary flow. At the inlet plane of the downstream vane the wake is extremely weak and the radial pressure gradient is shown to have caused the majority of the high loss wake fluid to be located between the mid-height of the passage and the casing wall. The structure of the flow indicates that between a high pressure stage and a downstream vane simple two-dimensional blade row interaction does not occur. The results presented in this paper indicate that the presence of an upstream stage is likely to significantly alter the structure of the secondary flow within a downstream vane. The paper also shows that vane-rotor interaction within the upstream stage causes a 10° circumferential variation in the inlet flow angle of the 2nd stage vane.

Household consumption pattern and buying behavior for fish in an area Mymensingh, Bangladesh

The study was conducted on 238 households in Bangladesh Agricultural University campus and its adjoining areas in Mymensingh. The household were divided into four groups based on their per capita income. Monthly expenditure on fish, income elasticity of demand and marginal propensity to consume were calculated. 'Weighted average' method was used to study the level of preference for fish by sex and age groups and frequency of its purchase. The per capita monthly expenditure on fish of overall households was found to be Tk. 178.83. The consumption increased considerably between and among the income groups rising from Tk. 63.95 in the lowest income group to Tk. 249.11 in the highest income group. Based on income elasticity the proportion of income spent on fish was found to be greater than the proportion of increase in income for lower middle and upper middle income groups. However, percent expenditure decreased from 8.15 in lowest to 5.49 in the highest income group. Female members between 20 and 40yrs had the highest preference for fish in general followed by male members of above 40 yrs. Children (0 to 8 yrs), on the other band, had the least preference for fish, Sing and Magur (Catfishes) were the most preferred fish species for each age and sex group. Rui, a carp, was the single most purchased fish while the introduced exotic fishes were the least bought. Freshness was found to be the most important factor followed by the appearance and taste perception that positively affected the fish purchase.

Population dynamics of killifish Aphanius dispar (Ruppel) in Sandspit area off Karachi

Growth and mortality parameters of Aphanius dispar a cyprinoides generally observed in the catches of near shore area were estimated from the length frequency data collected from Sandspit area of Karachi, using LFSA. The von Bertalanffy growth parameters were estimated as Loo=71.73 mm & K=L35/yr for Male Aphanius dispar and Loo=70.66 & K=l.41 for female. Total Mortality coefficient (Z) was estimated using Length converted catch curve which is equal to 2.12/yr, for male and for female 2.19/yr. Natural mortality (M) was estimated by Pauly's empirical formula: M=l.64/yr (male) and 1.70/yr (female). The species also displayed two cohorts a year.

Opioid Withdrawal for 4 Days Prevents Synaptic Depression Induced by Low Dose of Morphine or Naloxone in Rat Hippocampal CA1 Area In Vivo

The formation of memory is believed to depend on experience- or activity-dependent synaptic plasticity, which is exquisitely sensitive to psychological stress since inescapable stress impairs long-term potentiation (LTP) but facilitates long-term depression (LTD). Our recent studies demonstrated that 4 days of opioid withdrawal enables maximal extents of both hippocampal LTP and drug-reinforced behavior; while elevated-platform stress enables these phenomena at 18 h of opioid withdrawal. Here, we examined the effects of low dose of morphine (0.5 mg kg(-1), i.p.) or the opioid receptor antagonist naloxone (1 mg kg(-1), i.p.) on synaptic efficacy in the hippocampal CA1 region of anesthetized rats. A form of synaptic depression was induced by low dose of morphine or naloxone in rats after 18 h but not 4 days of opioid withdrawal. This synaptic depression was dependent on both N-methyl-D-aspartate receptor and synaptic activity, similar to the hippocampal long-term depression induced by low frequency stimulation. Elevated-platform stress given 2 h before experiment prevented the synaptic depression at 18 h of opioid withdrawal; in contrast, the glucocorticoid receptor (GR) antagonist RU38486 treatment (20 mg kg(-1), s.c., twice per day for first 3 days of withdrawal), or a high dose of morphine reexposure (15 mg kg(-1), s.c., 12 h before experiment), enabled the synaptic depression on 4 days of opioid withdrawal. This temporal shift of synaptic depression by stress or GR blockade supplements our previous findings of potentially correlated temporal shifts of LTP induction and drug-reinforced behavior during opioid withdrawal. Our results therefore support the idea that stress experience during opioid withdrawal may modify hippocampal synaptic plasticity and play important roles in drug-associated memory. (C) 2009 Wiley-Liss, Inc.

An analytical study of the low frequency structural responses of a submerged hull

This paper studies the low frequency vibrational behaviour of a submerged hull. The submerged hull is modelled as a finite fluid-loaded cylindrical shell closed at each end by circular plates. The external pressure acting on the hull due to the fluid loading is analytically calculated using an infinite model. Three excitation cases of the hull are considered. In the first model, an axial point force is applied at the centre of one end plate, giving rise to an axisymmetric case in which only the zeroth circumferential shell modes are excited. In the second model, an axial point force is applied at the edge of the end plate. In the third model, a radial point force is applied also at the edge of the end plate. In the second and third load cases, all cylindrical shell circumferential modes are excited. The effects of fluid loading and different excitation locations are studied. A more complex hull model including stiffeners and bulkheads is then examined. A smeared approach is used to analytically model the ring stiffeners. All load cases are again considered and the effects of the various influencing factors on the low frequency responses are described.

Phase-conjugation broad area twin-contact semiconductor laser

Experimental demonstration of lasing in a broad area twin-contact semiconductor laser which operates as a phase-conjugation (PC) mirror in an external cavity configuration is reported. This allows "self-aligned" and self-pumped spatially nondegenerate four-wave mixing to be achieved without the need for external optical signals. The external cavity laser system is very insensitive to tilt misalignments of the external mirror in the PC regime and exhibits very good mechanical stability. The resonant frequency of the external cavity lies in the GHz range which corresponds to a subnanosecond time response of phase conjugation processes in the semiconductor laser. © 1997 American Institute of Physics.

CFD investigation of turbulent premixed flame response to transverse forcing

Screech is a high frequency oscillation that is usually characterized by instabilities caused by large-scale coherent flow structures in the wake of bluff-body flameholders and shear layers. Such oscillations can lead to changes in flame surface area which can cause the flame to burn unsteadily, but also couple with the acoustic modes and inherent fluid-mechanical instabilities that are present in the system. In this study, the flame response to hydrodynamic oscillations is analyzed in a controlled manner using high-fidelity Computational Fluid Dynamics (CFD) with an unsteady Reynolds-averaged Navier-Stokes approach. The response of a premixed flame with and without transverse velocity forcing is analyzed. When unforced, the flame is shown to exhibit a self-excitation that is attributed to the anti-symmetric shedding of vortices in the wake of the flameholder. The flame is also forced using two different kinds of low-amplitude out-of-phase inlet velocity forcing signals. The first forcing method is harmonic forcing with a single characteristic frequency, while the second forcing method involves a broadband forcing signal with frequencies in the range of 500 - 1000 Hz. For the harmonic forcing method, the flame is perturbed only lightly about its mean position and exhibits a limit cycle oscillation that is characteristic of the forcing frequency. For the broadband forcing method, larger changes in the flame surface area and detachment of the flame sheet can be seen. Transition to a complicated trajectory in the phase space is observed. When analyzed systematically with system identification methods, the CFD results, expressed in the form of the Flame Transfer Function (FTF) are capable of elucidating the flame response to the imposed perturbation. The FTF also serves to identify, both spatially and temporally, regions where the flame responds linearly and nonlinearly. Locking-in between the flame's natural self-excited frequency and the subharmonic frequencies of the broadband forcing signal is found to alter the dynamical behaviour of the flame. Copyright © 2013 by ASME.

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

Level-oscillation-induced pump effect in a quantum dot with asymmetric constrictions

We have investigated the pump effect induced by the level oscillation in a quantum dot with asymmetric constrictions. The curve of pumped current versus the frequency of level oscillation undulates at zero temperature. The oscillation of the pumped current can be smeared by increasing the temperature and the coupling strength between the quantum dot and the leads. Either the temperature increase or the coupling strength enhancement can lead to a positive or negative effect on the pumped current, depending on the parameters of the quantum dot system. A larger level-oscillation magnitude results in a larger pumped current, especially in the low-frequency case. An analytical expression of the pumped current is obtained in the regime far from adiabatic. A convenient physical picture based on our analytic result is proposed, with which we can explain all the features of the pumped current curves.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

A direct digital frequency synthesizer with fourth-order phase domain Delta Sigma noise shaper and 12-bit current-steering DAC

This paper presents a direct digital frequency synthesizer (DDFS) with a 16-bit accumulator, a fourth-order phase domain single-stage Delta Sigma interpolator, and a 300-MS/s 12-bit current-steering DAC based on the Q(2) Random Walk switching scheme. The Delta Sigma interpolator is used to reduce the phase truncation error and the ROM size. The implemented fourth-order single-stage Delta Sigma noise shaper reduces the effective phase bits by four and reduces the ROM size by 16 times. The DDFS prototype is fabricated in a 0.35-mu m CMOS technology with active area of 1.11 mm(2) including a 12-bit DAC. The measured DDFS spurious-free dynamic range (SFDR) is greater than 78 dB using a reduced ROM with 8-bit phase, 12-bit amplitude resolution and a size of 0.09 mm(2). The total power consumption of the DDFS is 200)mW with a 3.3-V power supply.

Bloch oscillation under a bichromatic laser: Dynamical delocalization and localization, persistent terahertz emission, and harmonics generation

A novel AC driving configuration is proposed for biased semiconductor superlattices, in which the THz driving is provided by an intense bichromatic cw laser in the visible light range. The frequency difference between two components of the laser is resonant with the Bloch oscillation. Thus, multi-photon processes mediated by the conduction (valence) band states lead to dynamical delocalization and localization of the valence (conduction) electrons, and to the formation and collapse of quasi-minibands. Thus, driven Bloch oscillators are predicted to generate persistent THz emission and harmonics of the dipole field, which are tolerant of the exciton and the relaxation effects.

AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD

AlGaN/AlN/GaN/InGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) structures with improved buffer isolation have been investigated. The structures were grown by MOCVD on sapphire substrate. AFM result of this structure shows a good surface morphology with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu mx5 mu m. A mobility as high as 1950 cm(2)/Vs with the sheet carrier density of 9.89x10(12) cm(-2) was obtained, which was about 50% higher than other results of similar structures which have been reported. Average sheet resistance of 327 Omega/sq was achieved. The HEMTs device using the materials was fabricated, and a maximum drain current density of 718.5 mA/mm, an extrinsic transconductance of 248 mS/mm, a current gain cutoff frequency of 16 GHz and a maximum frequency of oscillation 35 GHz were achieved.

A Compact Direct Digital Frequency Synthesizer for System-on-chip

A compact direct digital frequency synthesizer (DDFS) for system-on-chip (SoC) is developed in this paper. For smaller chip size and lower power consumption, the phase to sine mapping data is compressed by using sine symmetry technique, sine-phase difference technique, quad line approximation (QLA) technique and quantization and error read only memory (QE-ROM) technique. The ROM size is reduced by 98 % using the techniques mentioned above. A compact DDFS chip with 32-bit phase storage depth and a 10-bit on-chip digital to analog converter(DAC) has been successfully implemented using standard 0.35um CMOS process. The core area of the DDFS is 1.6mm(2). It consumes 167 mW at 3.3V, and its spurious free dynamic range (SFDR) is 61dB.