Yellow laser light generation by frequency doubling of the output from a master oscillator fiber power amplifier system

We present a power-scalable approach for yellow laser-light generation based on standard Ytterbium (Yb) doped fibers. To force the cavity to lase at 1154 nm, far above the gain-maximum, measures must be taken to fulfill lasing condition and to suppress competing amplified spontaneous emission (ASE) in the high-gain region. To prove the principle we built a fiber-laser cavity and a fiber-amplifier both at 1154 nm. In between cavity and amplifier we suppressed the ASE by 70 dB using a fiber Bragg grating (FBG) based filter. Finally we demonstrated efficient single pass frequency doubling to 577 nm with a periodically poled lithium niobate crystal (PPLN). With our linearly polarized 1154 nm master oscillator power fiber amplifier (MOFA) system we achieved slope efficiencies of more than 15 % inside the cavity and 24 % with the fiber-amplifier. The frequency doubling followed the predicted optimal efficiency achievable with a PPLN crystal. So far we generated 1.5 W at 1154nm and 90 mW at 577 nm. Our MOFA approach for generation of 1154 nm laser radiation is power-scalable by using multi-stage amplifiers and large mode-area fibers and is therefore very promising for building a high power yellow laser-light source of several tens of Watt.

The Face of Power

Objective: In humans and other animals, open, expansive postures (compared to contracted postures) are evolutionary developed expressions of power and have been shown to cause neuroendocrine and behavioral changes (Carney, Cuddy, & Yap, 2010). In the present study we aimed to investigate whether power postures have a bearing on the participant’s facial appearance and whether others are able to distinguish faces after “high power posing” from faces after “low power posing”. Methods: 16 models were photographed 4-5 minutes after having adopted high and low power postures. Two different high power and two different low power postures were held for 2 minutes each. Power-posing sessions were performed on two consecutive days. High and low power photographs of each model were paired and an independent sample of 100 participants were asked to pick the more dominant and the more likeable face of each pair. Results: Photographs that were taken after adopting high power postures were chosen significantly more often as being more dominant looking. There was no preference when asked to choose the more likeable photograph (chance level). A further independent sample rated each photograph for head tilt, making it unlikely that dominance ratings were caused merely by the posture of the head. Consistently, facial width-to-height ratio did not differ between faces after high and low power posing. Conclusions: Postures associated with high power affect facial appearance, leading to a more dominant looking face. This finding may have implications for everyday life, for instance when a dominant appearance is needed.

Equation of state for hot dense matter using a relativistic screened hydrogenic model

The study of matter under conditions of high density, pressure, and temperature is a valuable subject for inertial confinement fusion (ICF), astrophysical phenomena, high-power laser interaction with matter, etc. In all these cases, matter is heated and compressed by strong shocks to high pressures and temperatures, becomes partially or completely ionized via thermal or pressure ionization, and is in the form of dense plasma. The thermodynamics and the hydrodynamics of hot dense plasmas cannot be predicted without the knowledge of the equation of state (EOS) that describes how a material reacts to pressure and how much energy is involved. Therefore, the equation of state often takes the form of pressure and energy as functions of density and temperature. Furthermore, EOS data must be obtained in a timely manner in order to be useful as input in hydrodynamic codes. By this reason, the use of fast, robust and reasonably accurate atomic models, is necessary for computing the EOS of a material.

Lifetime of silica final lenses subject to HiPER irradiation conditions

The goal of the European laser fusion project, is to build an engineering facility for repetitive laser operation (HiPER 4a) and later a fusion reactor (HiPER 4b). A key aspect for laser fusion energy is the final optics. At the moment, it is based on silica transmission lenses located 8 m away from the chamber center. Lens lifetime depends on the irradiation conditions. We have used a 48 MJ shock ignition target for calculations. We have studied the thermo-mechanical effects of ions and X-rays on the lenses. Ions lead to lens melting and must therefore be mitigated. On the other hand, X-rays (~1% of the energy) does not produce either a significant temperature rise or detrimental stresses. Finally, we calculated the neutron flux and gamma dose rate on the lenses. Next, based on a simple model we studied the formation of color centers in the sample, which lead to optical absorption. Calculations show that simultaneous neutron and gamma irradiation does not significantly increase the optical absorption during the expected lifetime of the HiPER 4a facility. Under severe conditions (HiPER 4b), operation above 800 K or lens refreshing by thermal annealing treatments seem to assure adequate behavior.

Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability

AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications. Although significant progress has been recently achieved [1], stability and reliability are still some of the main issues under investigation, particularly at high temperatures [2-3]. Taking into account that the gate contact metallization is one of the weakest points in AlGaN/GaN HEMTs, the reliability of Ni, Mo, Pt and refractory metal gates is crucial [4-6]. This work has been focused on the thermal stress and reliability assessment of AlGaN/GaN HEMTs. After an unbiased storage at 350 o C for 2000 hours, devices with Ni/Au gates exhibited detrimental IDS-VDS degradation in pulsed mode. In contrast, devices with Mo/Au gates showed no degradation after similar storage conditions. Further capacitance-voltage characterization as a function of temperature and frequency revealed two distinct trap-related effects in both kinds of devices. At low frequency (< 1MHz), increased capacitance near the threshold voltage was present at high temperatures and more pronounced for the Ni/Au gate HEMT and as the frequency is lower. Such an anomalous “bump” has been previously related to H-related surface polar charges [7]. This anomalous behavior in the C-V characteristics was also observed in Mo/Au gate HEMTs after 1000 h at a calculated channel temperatures of around from 250 o C (T2) up to 320 ºC (T4), under a DC bias (VDS= 25 V, IDS= 420 mA/mm) (DC-life test). The devices showed a higher “bump” as the channel temperature is higher (Fig. 1). At 1 MHz, the higher C-V curve slope of the Ni/Au gated HEMTs indicated higher trap density than Mo/Au metallization (Fig. 2). These results highlight that temperature is an acceleration factor in the device degradation, in good agreement with [3]. Interface state density analysis is being performed in order to estimate the trap density and activation energy.

Impact of N2 plasma power and duration on AlGaN/GaN HEMT

urface treatments have been recently shown to play an active role in electrical characteristics in AlGaN/GaN HEMTs, in particular during the passivation processing [1-4]. However, the responsible mechanisms are partially unknown and further studies are demanding. The effects of power and time N2 plasma pre-treatment prior to SiN deposition using PE-CVD (plasma enhanced chemical vapour deposition) on GaN and AlGaN/GaN HEMT have been investigated. The low power (60 W) plasma pre-treatment was found to improve the electronic characteristics in GaN based HEMT devices, independently of the time duration up to 20 min. In contrast, high power (150 and 210 W) plasma pretreatment showed detrimental effects in the electronic properties (Fig. 1), increasing the sheet resistance of the 2DEG, decreasing the 2DEG charge density in AlGaN/GaN HEMTs, transconductance reduction and decreasing the fT and fmax values up to 40% respect to the case using 60 W N2 plasma power. Although AFM (atomic force microscopy) results showed AlGaN and GaN surface roughness is not strongly affected by the N2-plasma, KFM (Kelvin force microscopy) surface analysis shows significant changes in the surface potential, trending to increase its values as the plasma power is higher. The whole results point at energetic ions inducing polarization-charge changes that affect dramatically to the 2-DEG charge density and the final characteristics of the HEMT devices. Therefore, we conclude that AlGaN surface is strongly sensitive to N2 plasma power conditions, which turn to be a key factor to achieve a good surface preparation prior to SiN passivation.

IFE Plant Technology Overview and contribution to HiPER proposal

HiPER is the European Project for Laser Fusion that has been able to join 26 institutions and signed under formal government agreement by 6 countries inside the ESFRI Program of the European Union (EU). The project is already extended by EU for two years more (until 2013) after its first preparatory phase from 2008. A large work has been developed in different areas to arrive to a design of repetitive operation of Laser Fusion Reactor, and decisions are envisioned in the next phase of Technology Development or Risk Reduction for Engineering or Power Plant facilities (or both). Chamber design has been very much completed for Engineering phase and starting of preliminary options for Reactor Power Plant have been established and review here.

High Temperature Pulsed and DC Performance of AlInN/GaN HEMTs

The AlGaN/GaN high-electron mobility transistors (HEMTs) have been considered as promising candidates for the next generation of high temperature, high frequency, high-power devices. The potential of GaN-based HEMTs may be improved using an AlInN barrier because of its better lattice match to GaN, resulting in higher sheet carrier densities without piezoelectric polarization [1]. This work has been focused on the study of AlInN HEMTs pulse and DC mode characterization at high temperature.

Integración MPlayer-OpenSVC en el procesador multinúcleo OMAP3530

La constante evolución de dispositivos portátiles multimedia que se ha producido en la última década ha provocado que hoy en día se disponga de una amplia variedad de dispositivos con capacidad para reproducir contenidos multimedia. En consecuencia, la reproducción de esos contenidos en dichos terminales lleva asociada disponer de procesadores que soporten una alta carga computacional, ya que las tareas de descodificación y presentación de video así lo requieren. Sin embargo, un procesador potente trabajando a elevadas frecuencias provoca un elevado consumo de la batería, y dado que se pretende trabajar con dispositivos portátiles, la vida útil de la batería se convierte en un asunto de especial importancia. La problemática que se plantea se ha convertido en una de las principales líneas de investigación del Grupo de Investigación GDEM (Grupo de Diseño Electrónico y Microelectrónico). En esta línea de trabajo, se persigue cómo optimizar el consumo de energía en terminales portables desde el punto de vista de la reducción de la calidad de experiencia del usuario a cambio de una mayor autonomía del terminal. Por tanto, para lograr esa reducción de la calidad de experiencia mencionada, se requiere un estándar de codificación de vídeo que así lo permita. El Grupo de Investigación GDEM cuenta con experiencia en el estándar de vídeo escalable H.264/SVC, el cual permite degradar la calidad de experiencia en función de las necesidades/características del dispositivo. Más concretamente, un video escalable contiene embebidas distintas versiones del video original que pueden ser descodificadas en diferentes resoluciones, tasas de cuadro y calidades (escalabilidades espacial, temporal y de calidad respectivamente), permitiendo una adaptación rápida y muy flexible. Seleccionado el estándar H.264/SVC para las tareas de vídeo, se propone trabajar con Mplayer, un reproductor de vídeos de código abierto (open source), al cual se le ha integrado un descodificador para vídeo escalable denominado OpenSVC. Por último, como dispositivo portable se trabajará con la plataforma de desarrollo BeagleBoard, un sistema embebido basado en el procesador OMAP3530 que permite modificar la frecuencia de reloj y la tensión de alimentación dinámicamente reduciendo de este modo el consumo del terminal. Este procesador a su vez contiene integrados un procesador de propósito general (ARM Cortex-A8) y un procesador digital de señal (DSP TMS320C64+TM). Debido a la alta carga computacional de la descodificación de vídeos escalables y la escasa optimización del ARM para procesamiento de datos, se propone llevar a cabo la ejecución de Mplayer en el ARM y encargar la tarea de descodificación al DSP, con la finalidad de reducir el consumo y por tanto aumentar la vida útil del sistema embebido sobre el cual se ejecutará la aplicación desarrollada. Una vez realizada esa integración, se llevará a cabo una caracterización del descodificador alojado en el DSP a través de una serie de medidas de rendimiento y se compararán los resultados con los obtenidos en el proceso de descodificación realizado únicamente en el ARM. ABSTRACT During the last years, the multimedia portable terminals have gradually evolved causing that nowadays a several range of devices with the ability of playing multimedia contents are easily available for everyone. Consequently, those multimedia terminals must have high-performance processors to play those contents because the coding and decoding tasks demand high computational load. However, a powerful processor performing to high frequencies implies higher battery consumption, and this issue has become one of the most important problems in the development cycle of a portable terminal. The power/energy consumption optimization on multimedia terminals has become in one the most significant work lines in the Electronic and Microelectronic Research Group of the Universidad Politécnica de Madrid. In particular, the group is researching how to reduce the user‟s Quality of Experience (QoE) quality in exchange for increased battery life. In order to reduce the Quality of Experience (QoE), a standard video coding that allows this operation is required. The H.264/SVC allows reducing the QoE according to the needs/characteristics of the terminal. Specifically, a scalable video contains different versions of original video embedded in an only one video stream, and each one of them can be decoded in different resolutions, frame rates and qualities (spatial, temporal and quality scalabilities respectively). Once the standard video coding is selected, a multimedia player with support for scalable video is needed. Mplayer has been proposed as a multimedia player, whose characteristics (open-source, enormous flexibility and scalable video decoder called OpenSVC) are the most suitable for the aims of this Master Thesis. Lastly, the embedded system BeagleBoard, based on the multi-core processor OMAP3530, will be the development platform used in this project. The multimedia terminal architecture is based on a commercial chip having a General Purpose Processor (GPP – ARM Cortex A8) and a Digital Signal Processor (DSP, TMS320C64+™). Moreover, the processor OMAP3530 has the ability to modify the operating frequency and the supply voltage in a dynamic way in order to reduce the power consumption of the embedded system. So, the main goal of this Master Thesis is the integration of the multimedia player, MPlayer, executed at the GPP, and scalable video decoder, OpenSVC, executed at the DSP in order to distribute the computational load associated with the scalable video decoding task and to reduce the power consumption of the terminal. Once the integration is accomplished, the performance of the OpenSVC decoder executed at the DSP will be measured using different combinations of scalability values. The obtained results will be compared with the scalable video decoding performed at the GPP in order to show the low optimization of this kind of architecture for decoding tasks in contrast to DSP architecture.

Contribution sharing of a fuel mixture components to the fuel cell potencial of a direct alcohol fuel cell

The increasing worldwide demand for electricity impels to develop clean and renewable energy resources. In the field of portable power devices not only size and weight represent important aspects to take into account, but the fuel and its storage are also critical issues to consider. In this last sense, the direct methanol (MeOH) fuel cells (DMFC) play an important role as they can offer high power and energy density, low emissions, ambient operating conditions and fast and convenient refuelling.

Comparative study of ion beam-irradiation effects on silica and α-quartz: evidences for excitonic mechanisms

Introduction - SiO 2 •Simple composition and structure; Crystalline and amorphous phases •Adequate for atomistic simulations •Abundant in nature. Relevant for many technologies -Irradiation with swift heavy ions: •They provide EXTREME physical conditions •Very high excitation densities similar to high power lasers •Very high local temperatures •By playing with high energy and heavy mass (SHI) : •One can go from low electronic excitations (collisions regime) to high electronic excitations (electronic regime

High Efficiency Envelope Amplifier Using The Slow-Envelope Technique

High efficiency envelope amplifiers are demanded in EER technique for RF transmitters, which benefits low maintaining cost or long battery time. The conventional solution is a dc-dc switching converters. This dc-dc converter should operate at very high frequency to track an envelope in the MHz range to supply the power amplifier. One of the alternative circuits suitable for this application is a hybrid topology composed of a switched converter and a linear regulator in series that work together to adjust the output voltage to track the envelope with accuracy. This topology can take advantage of the reduced slew-rate technique (also called slow-envelope technique) where switching dc-dc converter provides the RF envelope with limited slew rate in order to avoid high switching frequency and high power losses, while the linear regulator performs fine adjustment in order to obtain the exact replica of the RF envelope. The combination of this control technique with this topology is proposed in this paper. Envelopes with different bandwidth will be considered to optimize the efficiency of the dc-dc converter.

Envelope Amplifier Based on a Hybrid Series Converter With The Slow-envelope Technique

High frequency dc-dc switching converters are used as envelope amplifiers in RF transmitters. The dc-dc converter should operate at very high frequency to track an envelope in the MHz range to supply the power amplifier. One of the circuits suitable for this application is a hybrid topology composed of a switched converter and a linear regulator in series that work together to adjust the output voltage to track the envelope with accuracy. This topology can take advantage of the reduced slew-rate technique where switching dc-dc converter provides the RF envelope with limited slew rate in order to avoid high switching frequency and high power losses, while the linear regulator performs fine adjustment in order to obtain the exact replica of the RF envelope. The combination of this control technique with this topology is proposed in this paper. Envelopes with different bandwidth will be considered to optimize the efficiency of the dc-dc converter. The calculations and experiments have been done to track a 2MHz envelope in the range 0-12V for an EER RF transmitter.

Multiple Input-Output Bidirectional Solid State Transformer Based on a Series Resonant Converter

Las fuentes de alimentación de modo conmutado (SMPS en sus siglas en inglés) se utilizan ampliamente en una gran variedad de aplicaciones. La tarea más difícil para los diseñadores de SMPS consiste en lograr simultáneamente la operación del convertidor con alto rendimiento y alta densidad de energía. El tamaño y el peso de un convertidor de potencia está dominado por los componentes pasivos, ya que estos elementos son normalmente más grandes y más pesados que otros elementos en el circuito. Para una potencia de salida dada, la cantidad de energía almacenada en el convertidor que ha de ser entregada a la carga en cada ciclo de conmutación, es inversamente proporcional a la frecuencia de conmutación del convertidor. Por lo tanto, el aumento de la frecuencia de conmutación se considera un medio para lograr soluciones más compactas con los niveles de densidad de potencia más altos. La importancia de investigar en el rango de alta frecuencia de conmutación radica en todos los beneficios que se pueden lograr: además de la reducción en el tamaño de los componentes pasivos, el aumento de la frecuencia de conmutación puede mejorar significativamente prestaciones dinámicas de convertidores de potencia. Almacenamiento de energía pequeña y el período de conmutación corto conducen a una respuesta transitoria del convertidor más rápida en presencia de las variaciones de la tensión de entrada o de la carga. Las limitaciones más importantes del incremento de la frecuencia de conmutación se relacionan con mayores pérdidas del núcleo magnético convencional, así como las pérdidas de los devanados debido a los efectos pelicular y proximidad. También, un problema potencial es el aumento de los efectos de los elementos parásitos de los componentes magnéticos - inductancia de dispersión y la capacidad entre los devanados - que causan pérdidas adicionales debido a las corrientes no deseadas. Otro factor limitante supone el incremento de las pérdidas de conmutación y el aumento de la influencia de los elementos parásitos (pistas de circuitos impresos, interconexiones y empaquetado) en el comportamiento del circuito. El uso de topologías resonantes puede abordar estos problemas mediante el uso de las técnicas de conmutaciones suaves para reducir las pérdidas de conmutación incorporando los parásitos en los elementos del circuito. Sin embargo, las mejoras de rendimiento se reducen significativamente debido a las corrientes circulantes cuando el convertidor opera fuera de las condiciones de funcionamiento nominales. A medida que la tensión de entrada o la carga cambian las corrientes circulantes incrementan en comparación con aquellos en condiciones de funcionamiento nominales. Se pueden obtener muchos beneficios potenciales de la operación de convertidores resonantes a más alta frecuencia si se emplean en aplicaciones con condiciones de tensión de entrada favorables como las que se encuentran en las arquitecturas de potencia distribuidas. La regulación de la carga y en particular la regulación de la tensión de entrada reducen tanto la densidad de potencia del convertidor como el rendimiento. Debido a la relativamente constante tensión de bus que se encuentra en arquitecturas de potencia distribuidas los convertidores resonantes son adecuados para el uso en convertidores de tipo bus (transformadores cc/cc de estado sólido). En el mercado ya están disponibles productos comerciales de transformadores cc/cc de dos puertos que tienen muy alta densidad de potencia y alto rendimiento se basan en convertidor resonante serie que opera justo en la frecuencia de resonancia y en el orden de los megahercios. Sin embargo, las mejoras futuras en el rendimiento de las arquitecturas de potencia se esperan que vengan del uso de dos o más buses de distribución de baja tensión en vez de una sola. Teniendo eso en cuenta, el objetivo principal de esta tesis es aplicar el concepto del convertidor resonante serie que funciona en su punto óptimo en un nuevo transformador cc/cc bidireccional de puertos múltiples para atender las necesidades futuras de las arquitecturas de potencia. El nuevo transformador cc/cc bidireccional de puertos múltiples se basa en la topología de convertidor resonante serie y reduce a sólo uno el número de componentes magnéticos. Conmutaciones suaves de los interruptores hacen que sea posible la operación en las altas frecuencias de conmutación para alcanzar altas densidades de potencia. Los problemas posibles con respecto a inductancias parásitas se eliminan, ya que se absorben en los Resumen elementos del circuito. El convertidor se caracteriza con una muy buena regulación de la carga propia y cruzada debido a sus pequeñas impedancias de salida intrínsecas. El transformador cc/cc de puertos múltiples opera a una frecuencia de conmutación fija y sin regulación de la tensión de entrada. En esta tesis se analiza de forma teórica y en profundidad el funcionamiento y el diseño de la topología y del transformador, modelándolos en detalle para poder optimizar su diseño. Los resultados experimentales obtenidos se corresponden con gran exactitud a aquellos proporcionados por los modelos. El efecto de los elementos parásitos son críticos y afectan a diferentes aspectos del convertidor, regulación de la tensión de salida, pérdidas de conducción, regulación cruzada, etc. También se obtienen los criterios de diseño para seleccionar los valores de los condensadores de resonancia para lograr diferentes objetivos de diseño, tales como pérdidas de conducción mínimas, la eliminación de la regulación cruzada o conmutación en apagado con corriente cero en plena carga de todos los puentes secundarios. Las conmutaciones en encendido con tensión cero en todos los interruptores se consiguen ajustando el entrehierro para obtener una inductancia magnetizante finita en el transformador. Se propone, además, un cambio en los señales de disparo para conseguir que la operación con conmutaciones en apagado con corriente cero de todos los puentes secundarios sea independiente de la variación de la carga y de las tolerancias de los condensadores resonantes. La viabilidad de la topología propuesta se verifica a través una extensa tarea de simulación y el trabajo experimental. La optimización del diseño del transformador de alta frecuencia también se aborda en este trabajo, ya que es el componente más voluminoso en el convertidor. El impacto de de la duración del tiempo muerto y el tamaño del entrehierro en el rendimiento del convertidor se analizan en un ejemplo de diseño de transformador cc/cc de tres puertos y cientos de vatios de potencia. En la parte final de esta investigación se considera la implementación y el análisis de las prestaciones de un transformador cc/cc de cuatro puertos para una aplicación de muy baja tensión y de decenas de vatios de potencia, y sin requisitos de aislamiento. Abstract Recently, switch mode power supplies (SMPS) have been used in a great variety of applications. The most challenging issue for designers of SMPS is to achieve simultaneously high efficiency operation at high power density. The size and weight of a power converter is dominated by the passive components since these elements are normally larger and heavier than other elements in the circuit. If the output power is constant, the stored amount of energy in the converter which is to be delivered to the load in each switching cycle is inversely proportional to the converter’s switching frequency. Therefore, increasing the switching frequency is considered a mean to achieve more compact solutions at higher power density levels. The importance of investigation in high switching frequency range comes from all the benefits that can be achieved. Besides the reduction in size of passive components, increasing switching frequency can significantly improve dynamic performances of power converters. Small energy storage and short switching period lead to faster transient response of the converter against the input voltage and load variations. The most important limitations for pushing up the switching frequency are related to increased conventional magnetic core loss as well as the winding loss due to the skin and proximity effect. A potential problem is also increased magnetic parasitics – leakage inductance and capacitance between the windings – that cause additional loss due to unwanted currents. Higher switching loss and the increased influence of printed circuit boards, interconnections and packaging on circuit behavior is another limiting factor. Resonant power conversion can address these problems by using soft switching techniques to reduce switching loss incorporating the parasitics into the circuit elements. However the performance gains are significantly reduced due to the circulating currents when the converter operates out of the nominal operating conditions. As the input voltage or the load change the circulating currents become higher comparing to those ones at nominal operating conditions. Multiple Input-Output Many potential gains from operating resonant converters at higher switching frequency can be obtained if they are employed in applications with favorable input voltage conditions such as those found in distributed power architectures. Load and particularly input voltage regulation reduce a converter’s power density and efficiency. Due to a relatively constant bus voltage in distributed power architectures the resonant converters are suitable for bus voltage conversion (dc/dc or solid state transformation). Unregulated two port dc/dc transformer products achieving very high power density and efficiency figures are based on series resonant converter operating just at the resonant frequency and operating in the megahertz range are already available in the market. However, further efficiency improvements of power architectures are expected to come from using two or more separate low voltage distribution buses instead of a single one. The principal objective of this dissertation is to implement the concept of the series resonant converter operating at its optimum point into a novel bidirectional multiple port dc/dc transformer to address the future needs of power architectures. The new multiple port dc/dc transformer is based on a series resonant converter topology and reduces to only one the number of magnetic components. Soft switching commutations make possible high switching frequencies to be adopted and high power densities to be achieved. Possible problems regarding stray inductances are eliminated since they are absorbed into the circuit elements. The converter features very good inherent load and cross regulation due to the small output impedances. The proposed multiple port dc/dc transformer operates at fixed switching frequency without line regulation. Extensive theoretical analysis of the topology and modeling in details are provided in order to compare with the experimental results. The relationships that show how the output voltage regulation and conduction losses are affected by the circuit parasitics are derived. The methods to select the resonant capacitor values to achieve different design goals such as minimum conduction losses, elimination of cross regulation or ZCS operation at full load of all the secondary side bridges are discussed. ZVS turn-on of all the switches is achieved by relying on the finite magnetizing inductance of the Abstract transformer. A change of the driving pattern is proposed to achieve ZCS operation of all the secondary side bridges independent on load variations or resonant capacitor tolerances. The feasibility of the proposed topology is verified through extensive simulation and experimental work. The optimization of the high frequency transformer design is also addressed in this work since it is the most bulky component in the converter. The impact of dead time interval and the gap size on the overall converter efficiency is analyzed on the design example of the three port dc/dc transformer of several hundreds of watts of the output power for high voltage applications. The final part of this research considers the implementation and performance analysis of the four port dc/dc transformer in a low voltage application of tens of watts of the output power and without isolation requirements.

Silica final lens performance in laser fusion facilities: HiPER and LIFE

Nowadays, the projects LIFE (Laser Inertial Fusion Energy) in USA and HiPER (High Power Laser Energy Research) in Europe are the most advanced ones to demonstrate laser fusion energy viability. One of the main points of concern to properly achieve ignition is the performance of the final optics (lenses) under the severe irradiation conditions that take place in fusion facilities. In this paper, we calculate the radiation fluxes and doses as well as the radiation-induced temperature enhancement and colour centre formation in final lenses assuming realistic geometrical configurations for HiPER and LIFE. On these bases, the mechanical stresses generated by the established temperature gradients are evaluated showing that from a mechanical point of view lenses only fulfil specifications if ions resulting from the imploding target are mitigated. The absorption coefficient of the lenses is calculated during reactor startup and steady-state operation. The obtained results reveal the necessity of new solutions to tackle ignition problems during the startup process for HiPER. Finally, we evaluate the effect of temperature gradients on focal length changes and lens surface deformations. In summary, we discuss the capabilities and weak points of silica lenses and propose alternatives to overcome predictable problems