Selective-Area Atomic Layer Deposition

Atomic layer deposition (ALD) is a method to deposit thin films from gaseous precursors to the substrate layer-by-layer so that the film thickness can be tailored with atomic layer accuracy. Film tailoring is even further emphasized with selective-area ALD which enables the film growth to be controlled also on the substrate surface. Selective-area ALD allows the decrease of a process steps in preparing thin film devices. This can be of a great technological importance when the ALD films become into wider use in different applications. Selective-area ALD can be achieved by passivation or activation of a surface. In this work ALD growth was prevented by octadecyltrimethoxysilane, octadecyltrichlorosilane and 1-dodecanethiol SAMs, and by PMMA (polymethyl methacrylate) and PVP (poly(vinyl pyrrolidone) polymer films. SAMs were prepared from vapor phase and by microcontact printing, and polymer films were spin coated. Microcontact printing created patterned SAMs at once. The SAMs prepared from vapor phase and the polymer mask layers were patterned by UV lithography or lift-off process so that after preparation of a continuous mask layer selected areas of them were removed. On these areas the ALD film was deposited selectively. SAMs and polymer films prevented the growth in several ALD processes such as iridium, ruthenium, platinum, TiO2 and polyimide so that the ALD films did grow only on areas without SAM or polymer mask layer. PMMA and PVP films also protected the surface against Al2O3 and ZrO2 growth. Activation of the surface for ALD of ruthenium was achieved by preparing a RuOX layer by microcontact printing. At low temperatures the RuCp2-O2 process nucleated only on this oxidative activation layer but not on bare silicon.

Atmospheric boundary-layer across Hadley and Ferrel cells over the Indian Ocean

A Southern Ocean Pilot cruise covering the latitudes from 10 degrees N to 56 degrees S in the open Indian Ocean was carried out during January February 2004. Surface and upper air data collected during this cruise are reported here. It is shown that the broad features of the atmosphere, in particular that of temperature, follow the tropical and mid-latitude weather expected during January February in this region. However, the atmospheric boundary-layer shows large variations, both in its height and structure between tropics and high latitudes. Strong influence of the surface heat flux on boundary layer structure is clearly seen. Humidity field reveals several local maxima and minima, suggesting a laminated atmosphere with air from different sources moving almost unmixed in adjacent layers.

On the possibility of an alpha-sq omega-type dynamo in a thin layer inside the sun

If the solar dynamo operates in a thin layer of 10,000-km thickness at the interface between the convection zone and the radiative core, using the facts that the dynamo should have a period of 22 years and a half-wavelength of 40 deg in the theta-direction, it is possible to impose restrictions on the values which various dynamo parameters are allowed to have. It is pointed out that the dynamo should be of alpha-sq omega nature, and kinematical calculations are presented for free dynamo waves and for dynamos in thin rectangular slabs with appropriate boundary conditions. An alpha-sq omega dynamo is expected to produce a significant poloidal field which does not leak to the solar surface. It is found that the turbulent diffusity eta and alpha-coefficient are restricted to values within about a factor of 10, the median values being eta of about 10 to the 10th sq cm/sec and alpha of about 10 cm/sec. On the basis of mixing length theory, it is pointed out that such values imply a reasonable turbulent velocity of the order 30 m/s, but rather small turbulent length scales like 300 km.

A Novel Method for the Uniform Incorporation of Grain-Boundary Layer Modifiers in Positive Temperature Coefficient of Resistivity Barium Titanate

The presently developed two-stage process involves diping the prefired porous disks of n-BaTiO3 in nonaqueous solutions containing Al-buty rate, Ti-isopropoxide, and tetraethyl silicate and subsequent sintering. This leads to uniform distribution of the grain-boundary layer (GBL) modifiers (Al2O3+ TiO2+ SiO2) and better control of the grain size as well as the positive temperature coefficient of resistivity characteristics. The technique is particularly suited for GBL modifiers in low concentrations (< 1%).

A sufficient criterion for Kelvin–Helmholtz instability in the magnetopause boundary‐layer region

The Kelvin–Helmholtz instability has been investigated for the magnetopause boundary‐layer region by the linearized method. The plasma in magnetosheath and magnetopause is assumed to be semi‐infinitely extended homogeneous, nondissipative, and incompressible. It is observed that, if one relation of two plasma speeds on the two sides of the magnetopause, wave number, and boundary‐layer thickness exceeds a certain threshold, the instability sets in. This new analytically sufficient criterion for excitation of instability in the three‐layer plasma flow generalizes the corresponding Chandrasekhar’s instability criterion for two‐layer plasma flow. The known results have been recovered and modified, the new results have been discovered. It is proved that the velocity threshold for the onset of instability is low when the magnitude of the magnetosheath and boundary‐layer region magnetic field and the angle between them are small. Also the threshold depends on the direction of plasma flow. The following results are observed numerically. The growth of the instability is sensitive to the magnetic field direction in the magnetosheath. A slight variation in the magnetic field direction in the second region can substantially change the relative velocity threshold for instability. When the ratio of the density of the second and third layer (magnetosphere) increases or that of the first and third layer decreases, the threshold decreases. Apart from this a necessary criterion for instability is obtained for a particular case.

Broadband stacked three-layer circular microstrip antenna arrays

The broadband aspects of stacked three-layer electromagnetically coupled circular microstrip antenna arrays are investigated experimentally. Experiments carried out on 8-element linear microstrip antenna arrays, using optimized stacked three-layer circular microstrip antenna elements, configured in E- and H-planes, have exhibited an impedance bandwidth of 20 percent, with a high gain and a good pattern shape with sidelobe as well as crosspolarization levels better than -20 dB through a scan angle of 40 deg from the broadside.

Compressible MHD boundary layer in the stagnation region of a sphere

The steady laminar compressible boundary layer flow of an electrically conducting fluid in the stagnation region of a sphere with an applied magnetic field has been studied. The effects of the induced magnetic field, mass transfer, and viscous dissipation have been taken into account. Both isothermal and adiabatic wall conditions have been considered. The governing equations have been solved numerically using a shooting method. The skin friction and heat transfer are found to be strongly affected by the magnetic field, mass transfer, wall temperature and Mach number. It is found that the magnetic field reduces the heat transfer. This is a significant result which can be used in controlling the heat transfer rate. The boundary layer solutions break down as the magnetic parameter tends to a certain critical value.

Influence of Inclination Angle and Machining Direction on Friction and Transfer Layer Formation

In the present investigation, unidirectional grinding marks were created on a set of steel plates. Sliding experiments were then conducted with the prepared steel plates using Al-Mg alloy pins and an inclined pin-on-plate sliding tester. The goals of the experiments were to ascertain the influence of inclination angle and grinding mark direction on friction and transfer layer formation during sliding contact. The inclination angle of the plate was held at 0.2 deg, 0.6 deg, 1 deg, 1.4 deg, 1.8 deg, 2.2 deg, and 2.6 deg in the tests. The pins were slid both perpendicular and parallel to the grinding marks direction. The experiments were conducted under both dry and lubricated conditions on each plate in an ambient environment. Results showed that the coefficient of friction and the formation of transfer layer depend on the grinding marks direction and inclination angle of the hard surfaces. For a given inclination angle, under both dry and lubricated conditions, the coefficient of friction and transfer layer formation were found to be greater when the pins slid perpendicular to the unidirectional grinding marks than when the pins slid parallel to the grinding marks. In addition, a stick-slip phenomenon was observed under lubricated conditions at the highest inclination angle for sliding perpendicular to the grinding marks direction. This phenomenon could be attributed to the extent of plane strain conditions taking place at the asperity level during sliding. DOI: 10.1115/1.4002604]

The impact of ultra thin silicon nitride buffer layer on GaN growth on Si (1 1 1) by RF-MBE

Ultra thin films of pure silicon nitride were grown on a Si (1 1 1) surface by exposing the surface to radio-frequency (RF) nitrogen plasma with a high content of nitrogen atoms. The effect of annealing of silicon nitride surface was investigated with core-level photoelectron spectroscopy. The Si 2p photoelectron spectra reveals a characteristic series of components for the Si species, not only in stoichiometric Si3N4 (Si4+) but also in the intermediate nitridation states with one (Si1+) or three (Si3+) nitrogen nearest neighbors. The Si 2p core-level shifts for the Si1+, Si3+, and Si4+ components are determined to be 0.64, 2.20, and 3.05 eV, respectively. In annealed sample it has been observed that the Si4+ component in the Si 2p spectra is significantly improved, which clearly indicates the crystalline nature of silicon nitride. The high resolution X-ray diffraction (HRXRD), scanning electron microscopy (SEM) and photoluminescence (PL) studies showed a significant improvement of the crystalline qualities and enhancement of the optical properties of GaN grown on the stoichiometric Si3N4 by molecular beam epitaxy (MBE). (C) 2010 Elsevier B.V. All rights reserved.

Pulsed laser deposition film of a donor-acceptor-donor polymer as possible active layer in devices

A molecule having a ketone group between two thiophene groups was synthesized. Presence of alternating electron donating and accepting moieties gives this material a donor-acceptor-donor (DAD) architecture. PolyDAD was synthesized from DAD monomer by oxidative polymerization. Device quality films of polyDAD were fabricated using pulsed laser deposition technique. X-ray photoelectron spectroscopy (XPS) and fourier transform infrared spectra (FTIR) data of both as synthesized and film indicate the material does not degrade during ablation. Optical band gap was determined to be about 1.45 eV. Four orders of magnitude increase in conductivity was observed from as synthesized to pulsed laser deposition (PLD) fabricated film of polyDAD. Annealing of polyDAD films increase conductivity, indicating better ordering of the molecules upon heating. Rectifying devices were fabricated from polyDAD, and preliminary results are discussed.

3-Dimensional laminar boundary-layer in a constant-pressure diverging

larity solution is obtained for laminar 3D constant pressure flow with lateral streamline divergence. The similarity solution is shown to reduce to a Blasius solution for 2D flow over a flat plate. Measurements of velocity profiles are made to compare the similarity solution and are found to be in excellent agreement with the prediction