Enhancement of oxidation rate of a-Si nanoparticles during dehydrogenation

Oxidation of amorphous silicon (a-Si) nanoparticles grown by plasma-enhanced chemical vapor deposition were investigated. Their hydrogen content has a great influence on the oxidation rate at low temperature. When the mass gain is recorded during a heating ramp in dry air, an oxidation process at low temperature is identified with an onset around 250°C. This temperature onset is similar to that of hydrogen desorption. It is shown that the oxygen uptake during this process almost equals the number of hydrogen atoms present in the nanoparticles. To explain this correlation, we propose that oxidation at low temperature is triggered by the process of hydrogen desorption

Selective ablation of photovoltaic materials with UV laser sources for monolithic interconnection of devices based on a-Si:H

Lasers are essential tools for cell isolation and monolithic interconnection in thin-film-silicon photovoltaic technologies. Laser ablation of transparent conductive oxides (TCOs), amorphous silicon structures and back contact removal are standard processes in industry for monolithic device interconnection. However, material ablation with minimum debris and small heat affected zone is one of the main difficulty is to achieve, to reduce costs and to improve device efficiency. In this paper we present recent results in laser ablation of photovoltaic materials using excimer and UV wavelengths of diode-pumped solid-state (DPSS) laser sources. We discuss results concerning UV ablation of different TCO and thin-film silicon (a-Si:H and nc-Si:H), focussing our study on ablation threshold measurements and process-quality assessment using advanced optical microscopy techniques. In that way we show the advantages of using UV wavelengths for minimizing the characteristic material thermal affection of laser irradiation in the ns regime at higher wavelengths. Additionally we include preliminary results of selective ablation of film on film structures irradiating from the film side (direct writing configuration) including the problem of selective ablation of ZnO films on a-Si:H layers. In that way we demonstrate the potential use of UV wavelengths of fully commercial laser sources as an alternative to standard backscribing process in device fabrication.

Isothermal sections of the Ru-Si-Ge, Ru-Ge-Sn and Ru-Si-Sn systems at 900°C

The ternary systems Ruthenium-Silicon-Germanium, Ruthenium-Germanium-Tin and Ruthenium-Silicon-Tin were investigated by powder X-ray diffraction and electron microprobe analysis. Relations at 900 degrees C between solid phases are given and no ternary compound was found. Solubilities and evolution of lattice parameters have been correlated. Maximum mutual solubilities in the Si-Sn and Ge-Sn systems are given. (C) 1998 Elsevier Science S.A.

Sonate en si mineur pour flûte et clavier / J. S. Bach, comp.

Titre uniforme : [Sonates. Flûte, clavier. BWV 1030. Si mineur]

Sonate en si mineur pour flûte et clavier / J. S. Bach, comp.

Titre uniforme : [Sonates. Flûte, clavier. BWV 1030. Si mineur]

Disseny de la instal·lació de climatització amb energia geotèrmica i terra radiant d'una vivenda unifamiliar al terme municipal de la Sentiu de Sió

El treball es centra principalment en el disseny de la instal·lació geotèrmica exterior i del terra radiant de l'interior. El disseny es basa en aconseguir el confort de calefacció i s'aprofita el fet de que s'utilitza un sistema reversible per aportar el màxim confort durant l'èpocade refrigeració. Es realitza un estudi de les possibles alternatives per a la instal·lació, també s'observaran els aparells i accessoris escollits per a la implantació de la instal·lació.