Penaeus indicus H. Milne Edwards, 1837: a summary of the conclusions from the fishing exploratory surveys between 1979 and 1837 at Sofala Bank, Mozambique

From 1979 to 1983, several surveys were carried out with research and fishing vessels at Sofala Bank in Mozambique. Their main objective was the assessment of shallow water prawn stocks, as this resource is of great economic importance for the country. A summary of the conclusions of these surveys regarding the species Penaeus indicus is presented. During the rainy season the species occurs closer to the shore than during the dry season. Estimates of biomass are very variable. The spawning peak seems to occur at the beginning of the rainy season (September-October). The spawning areas are located very close to the shore in the northern part of Sofala Bank and South of 17 degree 10'S in the 15-25 m depth interval.

The evolution of intermediate castration virulence and ant coexistence in a spatially structured environment

Theory suggests that spatial structuring should select for intermediate levels of virulence in parasites, but empirical tests are rare and have never been conducted with castration (sterilizing) parasites. To test this theory in a natural landscape, we co

A Plant Needs Ants like a Dog Needs Fleas: Myrmelachista schumanni Ants Gall Many Tree Species to Create Housing

Hundreds of tropical plant species house ant colonies in specialized chambers called domatia. When, in 1873, Richard Spruce likened plant-ants to fleas and asserted that domatia are ant-created galls, he incited a debate that lasted almost a century. Alth

B itte r an d Sw e e t /Um am i Ta s te Re c ep to rs w ith D iffe ren tly Evo lu tio n a ry Pa thw ays

通过生物信息学和系统发育学分析,研究了苦味受体和甜味/鲜味受体的进化途径。结果显示,苦味受体 和甜味/鲜味受体在进化上具有远相关,并且具有不同的进化途径,提示这可能是导致这些受体具有不同功能,传 导不同味觉的原因。

Preliminary study on the rearing of Chilka prawn ('Kantala') Penaeus indicus H. Milne-Edwards in the brackish water ponds at Keshpur (Orissa)

Results of experimental rearing of Penaeus indicus without supplemental feeding in unfertilized brackish water ponds in fore-shore of Chilka lake are presented in this paper. Higher rate of survival was recorded where advanced juveniles were stocked and lower rate of survival was recorded where early juveniles were stocked. The average growth rate recorded from the rearing experiments was higher than the average growth rate of Penaeus indicus recorded from the adjoining Chilka Lake which indicates the promising future of prawn farming in and around the lake. Analysis of gut contents revealed that Penaeus indicus could efficiently utilise algal and higher plant matter present in the ponds. No noticeable differences in daily growth rates were noticed between early and advanced juveniles in rearing experiments.

Survival, maturation, fecundity and hatching rates of unablated and ablated Penaeus indicus H.M. Edwards from brackishwater ponds

Penaeus indicus harvested after three months of rearing in brackishwater ponds and averaging 6.9 g for females and 5.6 g for males were stocked in two 12 cu m flowthrough ferrocement tanks at 240 females and 200 males per tank. The females were ablated on one eyestalk in one tank and remained unablated in the other tank; all males were unablated. Ablated females spawned up to 7 times per female; unablated females spawned up to only 3 times during the two month duration of the experiment. Ablated females produced a total number of 17.5 x 10⁶ eggs, 6.6 x 10⁶ nauplii, and an average of 23,480 eggs/spawning and 37.8% hatching rate from a total of 757 spawnings. Unablated females produced a total of 2.0 x 10⁶ eggs, 1.1 x 10⁶ nauplii, and an average of 26.990 eggs/spawning and 53.9% hatching rate from a total of 74 spawnings. Survival of ablated females was 53.5% compared to 69.4% for unablated females; males in both tanks averaged more than 90% survival.

Differentiation of subspecies of asiatic striped squirrels (Tamiops swinhoei) (Milne-Edwards) (Rodentia : Sciuridae) in China with description of a new subspecies

Based on the pelage characteristics and results of multivariate and univariate analyses, a new subspecies is described in this study, and a taxonomic revision of Tamiops swinhoei from China is presented. In total, 123 specimens of Tamiops swinhoei were in

Geographic variation of the Perny's Long-nosed squirrels (Dremomys pernyi) (Milne-Edwards, 1867) (Rodentia : Sciuridae) from southwestern China based on cranial morphometric variables

A sample of 114 specimens of Dremomys pernyi was investigated, 73 of which had intact skulls and were subjected to multivariate, coefficient of difference (C. D.), and cluster analyses. Results indicate that 4 subspecies (groups) of Dremomys pernyi inhabi

High-performance 2 mm gate width GaNHEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Optimized AlGaN/AlN/GaN high electron mobility transistors (HEMTs) structures were grown on 2-in semi-insulating (SI) 6H-SiC substrate by metal-organic chemical vapor deposition (MOCVD). The 2-in. HEMT wafer exhibited a low average sheet resistance of 305.3 Omega/sq with a uniformity of 3.85%. The fabricated large periphery device with a dimension of 0.35 pm x 2 nun demonstrated high performance, with a maximum DC current density of 1360 mA/mm, a transconductance of 460 mS/mm, a breakdown voltage larger than 80 V, a current gain cut-off frequency of 24 GHz and a maximum oscillation frequency of 34 GHz. Under the condition of continuous-wave (CW) at 9 GHz, the device achieved 18.1 W output power with a power density of 9.05 W/mm and power-added-efficiency (PAE) of 36.4%. While the corresponding results of pulse condition at 8 GHz are 22.4 W output power with 11.2 W/mm power density and 45.3% PAE. These are the state-of-the-art power performance ever reported for this physical dimension of GaN HEMTs based on SiC substrate at 8 GHz. (c) 2008 Elsevier Ltd. All rights reserved.

An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application

Optimized AlGaN/AlN/GaN high electron mobility transistor (HEMT) with high mobility GaN channel layer structures were grown on 2-in. diameter semi-insulating 6H-SiC substrates by MOCVD. The 2-in. diameter GaN HEMT wafer exhibited a low average sheet resistance of 261.9 Omega/square, with the resistance un-uniformity as low as 2.23%. Atomic force microscopy measurements revealed a smooth AlGaN surface whose root-mean-square roughness is 0.281 nm for a scan area of 5 x 5 mu m. For the single-cell HEMTs device of 2.5-mm gate width fabricated using the materials, a maximum drain current density of 1.31 A/mm, an extrinsic transconductance of 450 mS/mm, a current gain cutoff frequency of 24 GHz and a maximum frequency of oscillation 54 GHz were achieved. The four-cell internally-matched GaN HEMTs device with 10-mm total gate width demonstrated a very high output power of 45.2 W at 8 GHz under the condition of continuous-wave (CW), with a power added efficiency of 32.0% and power gain of 6.2 dB. To our best knowledge, the achieved output power of internally-matched devices are the state-of-the-art result ever reported for X-band GaN-based HEMTs. Crown Copyright (C) 2009 Published by Elsevier Ltd. All rights reserved.

1-mm gate periphery AlGaN/AIN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with high mobility GaN channel layer were grown on 50 min diameter semi-insulating (SI) 6H-SiC substrates by metalorganic chemical vapor deposition and large periphery HEMT devices were fabricated and characterized. High two-dimensional electron gas mobility of 2215 cm(2)/V s at room temperature with sheet electron concentration of 1.044 x 10(13)/cm(2) was achieved. The 50 mm diameter HEMT wafer exhibited a low average sheet resistance of 251.0 Omega/square, with the resistance uniformity of 2.02%. Atomic force microscopy measurements revealed a smooth AlGaN surface with a root-mean-square roughness of 0.27 nm for a scan area of 5 mu mi x 5 pm. The 1-mm gate width devices fabricated using the materials demonstrated a very high continuous wave output power of 9.39 W at 8 GHz, with a power added efficiency of 46.2% and power gain of 7.54 dB. A maximum drain current density of 1300 mA/mm, an extrinsic transconductance of 382 mS/mm, a current gain cutoff frequency of 31 GHz and a maximum frequency of oscillation 60 GHz were also achieved in the same devices. (C) 2007 Elsevier Ltd. All rights reserved.

12 W high efficiency single frequency ring laser

Single-frequency output power of 12 W at 1064 nm is demonstrated. Pumped by a fiber-coupled diode laser, the Nd:YVO4 produces 58.6% of the slope efficiency with respect to absorbed pump power, and 52.7% of the optical-optical efficiency and nearly diffraction-limited output with a beam quality parameter of M-2 approximate to 1.11. To the best of our knowledge, this is the highest slope efficiency and optical-optical efficiency in single-frequency Nd:YVO4 ring laser. The slope efficiency of the single frequency laser is close to the limit of the efficiency. [GRAPHICS] output spectrum of the single-frequency Nd:YVO4 ring laser