More oomph

An ingenious new CMOS-compatible process which promises to significantly improve the performance of power devices is discussed. A novel power device concept based on the use of high voltage regions suspended on thin semiconductor/dielectric membranes is reported. The membrane power devices are manufactured in a fully-CMOS compatible silicon-on-insulator (SOI) process followed by a bulk etching step and subsequent back-passivation. The concept is applicable to a class of high voltage devices such as LDMOSFETs, diodes, LIGBTs and superjunctions.

Defined etching of carbon-diamond films on silicon using an oxygen plasma with titanium masking

A technique for pattern transfer onto carbon-diamond films deposited by radio-frequency plasma-enhanced chemical vapour deposition is reported. Such a technique involves standard photolithography processes and reactive ion etching by oxygen and is compatible with present day microelectronic technology. The patterns transferred are well defined with very good resolution. © 1992.