969 resultados para Spin-polarized electronic transport
Resumo:
Do polyacenes, circumacenes, periacenes, nanographenes, and graphene nanoribbons show a spin polarized ground state? In this work, we present monodeterminantal (Hartree–Fock (HF) and density functional theory (DFT) types), and multideterminantal calculations (Møller–Plesset and Coupled Cluster), for several families of unsaturated organic molecules (n-Acenes, n-Periacenes and n-Circumacenes). All HF calculations and many DFT show a spin-polarized (antiferromagnetic) ground state, in agreement with previous calculations. Nevertheless, the multideterminantal calculations, carried out with perturbative and variational wavefunctions, show that the more stable state is obtained starting from the unpolarized HF wavefunction. The trend of the stabilization of wavefunctions (polarized or unpolarized) with respect to exchange and correlation potentials, and to the number of benzene rings, has been analyzed. A study of the spin (〈Ŝ2〉) and the spin density on the carbon atoms has also been carried out.
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The formation and rupture of atomic-sized contacts is modelled by means of molecular dynamics simulations. Such nano-contacts are realized in scanning tunnelling microscope and mechanically controlled break junction experiments. These instruments routinely measure the conductance across the nano-sized electrodes as they are brought into contact and separated, permitting conductance traces to be recorded that are plots of conductance versus the distance between the electrodes. One interesting feature of the conductance traces is that for some metals and geometric configurations a jump in the value of the conductance is observed right before contact between the electrodes, a phenomenon known as jump-to-contact. This paper considers, from a computational point of view, the dynamics of contact between two gold nano-electrodes. Repeated indentation of the two surfaces on each other is performed in two crystallographic orientations of face-centred cubic gold, namely (001) and (111). Ultimately, the intention is to identify the structures at the atomic level at the moment of first contact between the surfaces, since the value of the conductance is related to the minimum cross-section in the contact region. Conductance values obtained in this way are determined using first principles electronic transport calculations, with atomic configurations taken from the molecular dynamics simulations serving as input structures.
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We study electronic transport in a Luttinger liquid with an embedded impurity, which is either a weak scatterer (WS) or a weak link (WL), when interacting electrons are coupled to one-dimensional massless bosons (e.g., acoustic phonons). We find that the duality relation, ?WS?WL=1, between scaling dimensions of the electron backscattering in the WS and WL limits, established for the standard Luttinger liquid, holds in the presence of the additional coupling for an arbitrary fixed strength of boson scattering from the impurity. This means that at low temperatures such a system remains either an ideal insulator or an ideal metal, regardless of the scattering strength. On the other hand, when fermion and boson scattering from the impurity are correlated, the system has a rich phase diagram that includes a metal-insulator transition at some intermediate values of the scattering.
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The discovery that a spin-polarized current is capable of exerting a torque in a ferromagnetic material, through spin transfer, might provide the development of new technological devices that store information via the direction of magnetization. The reduction of current density to revert the magnetization is a primary issue to potential applications on non volatile random access memories (MRAM). We report a theorical study of the dipolar and shape effects on the critical current density for reversal of magnetization, via spin transfer torque (STT), on ferromagnetic nanoelements. The nanostructured system consists on a reference layer, in which the current will be spin-polarized, and a free layer of magnetization reversal. We observed considerable changes on the critical current density as a function of the element’s reversion layer thickness (t = 1.0 nm, 1.5 nm, 2.0 nm e 2.5 nm) and geometry (circular and elliptical), the material kind of the system free layer (Iron and Permalloy) and according to the orientation of the magnetization and the spin polarization with the major axis. We show that the critical current density may be reduced about 50% by reducing the Fe free layer thickness and around 75% when we change the saturation magnetization of circular nanoelements with 2.5 nm of thickness. We still observed a reduction as much as 90% on the current density of reversion for thin nanoelements magnetized along the minor axis direction, using in-plane spin polarization parallel to the magnetization.
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First-principles electronic structure methods are used to find the rates of inelastic intravalley and intervalley n-type carrier scattering in Si1-xGex alloys. Scattering parameters for all relevant Delta and L intra- and intervalley scattering are calculated. The short-wavelength acoustic and the optical phonon modes in the alloy are computed using the random mass approximation, with interatomic forces calculated in the virtual crystal approximation using density functional perturbation theory. Optical phonon and intervalley scattering matrix elements are calculated from these modes of the disordered alloy. It is found that alloy disorder has only a small effect on the overall inelastic intervalley scattering rate at room temperature. Intravalley acoustic scattering rates are calculated within the deformation potential approximation. The acoustic deformation potentials are found directly and the range of validity of the deformation potential approximation verified in long-wavelength frozen phonon calculations. Details of the calculation of elastic alloy scattering rates presented in an earlier paper are also given. Elastic alloy disorder scattering is found to dominate over inelastic scattering, except for almost pure silicon (x approximate to 0) or almost pure germanium (x approximate to 1), where acoustic phonon scattering is predominant. The n-type carrier mobility, calculated from the total (elastic plus inelastic) scattering rate, using the Boltzmann transport equation in the relaxation time approximation, is in excellent agreement with experiments on bulk, unstrained alloys..
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The p-type carrier scattering rate due to alloy disorder in Si1-xGex alloys is obtained from first principles. The required alloy scattering matrix elements are calculated from the energy splitting of the valence bands, which arise when one average host atom is replaced by a Ge or Si atom in supercells containing up to 128 atoms. Alloy scattering within the valence bands is found to be characterized by a single scattering parameter. The hole mobility is calculated from the scattering rate using the Boltzmann transport equation in the relaxation time approximation. The results are in good agreement with experiments on bulk, unstrained alloys..
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The focus of this work is to develop and employ numerical methods that provide characterization of granular microstructures, dynamic fragmentation of brittle materials, and dynamic fracture of three-dimensional bodies.
We first propose the fabric tensor formalism to describe the structure and evolution of lithium-ion electrode microstructure during the calendaring process. Fabric tensors are directional measures of particulate assemblies based on inter-particle connectivity, relating to the structural and transport properties of the electrode. Applying this technique to X-ray computed tomography of cathode microstructure, we show that fabric tensors capture the evolution of the inter-particle contact distribution and are therefore good measures for the internal state of and electronic transport within the electrode.
We then shift focus to the development and analysis of fracture models within finite element simulations. A difficult problem to characterize in the realm of fracture modeling is that of fragmentation, wherein brittle materials subjected to a uniform tensile loading break apart into a large number of smaller pieces. We explore the effect of numerical precision in the results of dynamic fragmentation simulations using the cohesive element approach on a one-dimensional domain. By introducing random and non-random field variations, we discern that round-off error plays a significant role in establishing a mesh-convergent solution for uniform fragmentation problems. Further, by using differing magnitudes of randomized material properties and mesh discretizations, we find that employing randomness can improve convergence behavior and provide a computational savings.
The Thick Level-Set model is implemented to describe brittle media undergoing dynamic fragmentation as an alternative to the cohesive element approach. This non-local damage model features a level-set function that defines the extent and severity of degradation and uses a length scale to limit the damage gradient. In terms of energy dissipated by fracture and mean fragment size, we find that the proposed model reproduces the rate-dependent observations of analytical approaches, cohesive element simulations, and experimental studies.
Lastly, the Thick Level-Set model is implemented in three dimensions to describe the dynamic failure of brittle media, such as the active material particles in the battery cathode during manufacturing. The proposed model matches expected behavior from physical experiments, analytical approaches, and numerical models, and mesh convergence is established. We find that the use of an asymmetrical damage model to represent tensile damage is important to producing the expected results for brittle fracture problems.
The impact of this work is that designers of lithium-ion battery components can employ the numerical methods presented herein to analyze the evolving electrode microstructure during manufacturing, operational, and extraordinary loadings. This allows for enhanced designs and manufacturing methods that advance the state of battery technology. Further, these numerical tools have applicability in a broad range of fields, from geotechnical analysis to ice-sheet modeling to armor design to hydraulic fracturing.
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The bond formation between an oxide surface and oxygen, which is of importance for numerous surface reactions including catalytic reactions, is investigated within the framework of hybrid density functional theory that includes nonlocal Fock exchange. We show that there exists a linear correlation between the adsorption energies of oxygen on LaMO3 (M = Sc–Cu) surfaces obtained using a hybrid functional (e.g., Heyd–Scuseria–Ernzerhof) and those obtained using a semilocal density functional (e.g., Perdew–Burke–Ernzerhof) through the magnetic properties of the bulk phase as determined with a hybrid functional. The energetics of the spin-polarized surfaces follows the same trend as corresponding bulk systems, which can be treated at a much lower computational cost. The difference in adsorption energy due to magnetism is linearly correlated to the magnetization energy of bulk, that is, the energy difference between the spin-polarized and the non-spin-polarized solutions. Hence, one can estimate the correction ...
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La presente tesis es un estudio dedicado a la optimización y desarrollo de sistemas del tipo juntura túnel. La metodología utilizada para la realización de la tesis consistió, en primer lugar, en la optimización de las componentes independientes de la juntura túnel: electrodo y barrera aislante. Posteriormente se optimizaron los procesos de fabricación para el desarrollo y caracterización de dispositivos del tipo juntura túnel en su forma final. En la primera parte de la tesis se analizan detalladamente los resultados obtenidos de la caracterización eléctrica y topografica de barreras aislantes en sistemas electrodo - barrera. Los sistemas bicapas estudiados, GdBa_2Cu_3_7/SrTiO_3, Nb/Ba_0,05Sr_0,95TiO_3 y YBa_2Cu_3O_7/SrTiO_3, fueron caracterizados utilizando un microscopio de fuerza atómica en modo conductor. Se propuso un modelo fenomenológico basado en los resultados experimentales, que permitió la obtención de parámetros críticos para el desarrollo de dispositivos del tipo juntura túnel con nuevas funcionalidades. La información obtenida de la caracterización de los sistemas bicapas (homogeneidad de crecimiento, baja densidad de defectos y de pinholes) indican un muy buen control de los parámetros de crecimiento de las barreras. Por otro lado, se obtuvo un buen comportamiento aislante para espesores mayores a 2 nm sin la presencia de pinholes en la barrera. La similitud en la estequiometría de las barreras (SrTiO_3) permitió comparar los distintos sistemas estudiados en términos de conductividad eléctrica. Se verificó que el modelo fenomenológico permite comparar la conductividad eléctrica de los sistemas mediante uno de los parámetros definidos en el modelo fenomenológico (obtenido de los ajustes lineales de las curvas I(V)). De los 3 sistemas estudiados, las bicapas GdBa_2Cu_3O_7/SrTiO_3 presentaron un mayor valor de longitud de atenuación de los portadores de carga a través de la barrera y una muy baja densidad de defectos superficiales. Las bicapas YBa_2Cu_3O_7/SrTiO_3 y Nb/Ba_0,05Sr_0,95TiO_3 permitieron validar el modelo fenomenológico propuesto para el análisis de la respuesta corriente - voltaje obtenida con el microscopio de fuerza atómica en modo conductor. La segunda parte de la tesis abarca conceptos de magnetismo y microfabricación para el desarrollo de junturas túnel magnéticas. Durante la caracterización de las películas ferromagnéticas individuales de Co_90Fe_10 (CoFe) se logró aumentar valor del campo coercitivo de films de 10 nm de espesor al incrementar la temperatura de depósito. Esto se debe a un aumento del tamaño de grano de los films. El aumento de la temperatura del sustrato durante el crecimiento influye en la morfología y las propiedades magnéticas de los films de CoFe favoreciendo la formación de granos y la pérdida del eje preferencial de magnetización. Estos resultados permitieron la fabricación de sistemas Co_90Fe_10/M_gO/Co_90Fe_10 con distintas orientaciones relativas accesibles con campo magnético para el estudio del acople magnético entre los films de CoFe. La caracterización eléctrica de estos sistemas, particularmente la respuesta corriente - voltaje obtenida con el microscopio de fuerza atómica en modo conductor, indicó que las propiedades de transporte eléctrico de las junturas presentan un alto grado de reproducibilidad. Se analizó además la inuencia del sustrato utilizado en la corriente túnel que atraviesa la barrera aislante. Por otro lado, se discuten los fenómenos relacionados a la optimización de las propiedades magnéticas de electrodos ferromagnéticos para la fabricación de junturas túnel Co_90Fe_10/MgO/Co_90Fe_10 y Co_90Fe_10/MgO /Fe_20Ni_80. En particular, se estudió el acople magnético entre capas ferromagnéticas y la inuencia del sustrato utilizado para el crecimiento de las tricapas. La optimización de los electrodos magnéticos involucró el análisis de la inuencia de la presencia de un aislante entre dos capas magnéticas en el acople de los electrodos. Se logró el desacople de films de 10 nm de Co_90Fe_10 y Fe_20Ni_80 separados por un espaciador de MgO de 2 nm. Finalmente se detallan los pasos para la fabricación de una red de junturas túnel magnéticas y su caracterización eléctrica a bajas temperaturas. El sistema estudiado fue la tricapa Co_90Fe_10 (10 nm)/M_gO (8 nm)/ Fe_20Ni_80 (10 nm) crecido sobre un sustrato de M_gO. La caracterización eléctrica confirmó la buena calidad de la junturas fabricadas. Las junturas obtenidas presentaron un comportamiento altamente resistivo (~ MΩ). Las mediciones de la corriente túnel en función de la temperatura permitieron descartar la presencia de pinholes en la barrera. El transporte de los portadores de carga es por efecto túnel a través de la barrera aislante. Las curvas de conductancia diferencial permitieron calcular el valor medio de la altura de la barrera de potencial (φ = 3.1 eV) a partir del modelo de Brinkman. Los resultados obtenidos en cada uno de los capítulos se complementan y son relevantes para la optimización de junturas túnel, debido a que brindan información crítica para su correcto funcionamiento. En la presente tesis se lograron obtener los primeros avances para la fabricación de arreglos de junturas túnel que permitan el desarrollo de dispositivos.
Resumo:
La presente tesis es un estudio dedicado a la optimización y desarrollo de sistemas del tipo juntura túnel. La metodología utilizada para la realización de la tesis consistió, en primer lugar, en la optimización de las componentes independientes de la juntura túnel: electrodo y barrera aislante. Posteriormente se optimizaron los procesos de fabricación para el desarrollo y caracterización de dispositivos del tipo juntura túnel en su forma final. En la primera parte de la tesis se analizan detalladamente los resultados obtenidos de la caracterización eléctrica y topografica de barreras aislantes en sistemas electrodo - barrera. Los sistemas bicapas estudiados, GdBa_2Cu_3_7/SrTiO_3, Nb/Ba_0,05Sr_0,95TiO_3 y YBa_2Cu_3O_7/SrTiO_3, fueron caracterizados utilizando un microscopio de fuerza atómica en modo conductor. Se propuso un modelo fenomenológico basado en los resultados experimentales, que permitió la obtención de parámetros críticos para el desarrollo de dispositivos del tipo juntura túnel con nuevas funcionalidades. La información obtenida de la caracterización de los sistemas bicapas (homogeneidad de crecimiento, baja densidad de defectos y de pinholes) indican un muy buen control de los parámetros de crecimiento de las barreras. Por otro lado, se obtuvo un buen comportamiento aislante para espesores mayores a 2 nm sin la presencia de pinholes en la barrera. La similitud en la estequiometría de las barreras (SrTiO_3) permitió comparar los distintos sistemas estudiados en términos de conductividad eléctrica. Se verificó que el modelo fenomenológico permite comparar la conductividad eléctrica de los sistemas mediante uno de los parámetros definidos en el modelo fenomenológico (obtenido de los ajustes lineales de las curvas I(V)). De los 3 sistemas estudiados, las bicapas GdBa_2Cu_3O_7/SrTiO_3 presentaron un mayor valor de longitud de atenuación de los portadores de carga a través de la barrera y una muy baja densidad de defectos superficiales. Las bicapas YBa_2Cu_3O_7/SrTiO_3 y Nb/Ba_0,05Sr_0,95TiO_3 permitieron validar el modelo fenomenológico propuesto para el análisis de la respuesta corriente - voltaje obtenida con el microscopio de fuerza atómica en modo conductor. La segunda parte de la tesis abarca conceptos de magnetismo y microfabricación para el desarrollo de junturas túnel magnéticas. Durante la caracterización de las películas ferromagnéticas individuales de Co_90Fe_10 (CoFe) se logró aumentar valor del campo coercitivo de films de 10 nm de espesor al incrementar la temperatura de depósito. Esto se debe a un aumento del tamaño de grano de los films. El aumento de la temperatura del sustrato durante el crecimiento influye en la morfología y las propiedades magnéticas de los films de CoFe favoreciendo la formación de granos y la pérdida del eje preferencial de magnetización. Estos resultados permitieron la fabricación de sistemas Co_90Fe_10/M_gO/Co_90Fe_10 con distintas orientaciones relativas accesibles con campo magnético para el estudio del acople magnético entre los films de CoFe. La caracterización eléctrica de estos sistemas, particularmente la respuesta corriente - voltaje obtenida con el microscopio de fuerza atómica en modo conductor, indicó que las propiedades de transporte eléctrico de las junturas presentan un alto grado de reproducibilidad. Se analizó además la inuencia del sustrato utilizado en la corriente túnel que atraviesa la barrera aislante. Por otro lado, se discuten los fenómenos relacionados a la optimización de las propiedades magnéticas de electrodos ferromagnéticos para la fabricación de junturas túnel Co_90Fe_10/MgO/Co_90Fe_10 y Co_90Fe_10/MgO /Fe_20Ni_80. En particular, se estudió el acople magnético entre capas ferromagnéticas y la inuencia del sustrato utilizado para el crecimiento de las tricapas. La optimización de los electrodos magnéticos involucró el análisis de la inuencia de la presencia de un aislante entre dos capas magnéticas en el acople de los electrodos. Se logró el desacople de films de 10 nm de Co_90Fe_10 y Fe_20Ni_80 separados por un espaciador de MgO de 2 nm. Finalmente se detallan los pasos para la fabricación de una red de junturas túnel magnéticas y su caracterización eléctrica a bajas temperaturas. El sistema estudiado fue la tricapa Co_90Fe_10 (10 nm)/M_gO (8 nm)/ Fe_20Ni_80 (10 nm) crecido sobre un sustrato de M_gO. La caracterización eléctrica confirmó la buena calidad de la junturas fabricadas. Las junturas obtenidas presentaron un comportamiento altamente resistivo (~ MΩ). Las mediciones de la corriente túnel en función de la temperatura permitieron descartar la presencia de pinholes en la barrera. El transporte de los portadores de carga es por efecto túnel a través de la barrera aislante. Las curvas de conductancia diferencial permitieron calcular el valor medio de la altura de la barrera de potencial (φ = 3.1 eV) a partir del modelo de Brinkman. Los resultados obtenidos en cada uno de los capítulos se complementan y son relevantes para la optimización de junturas túnel, debido a que brindan información crítica para su correcto funcionamiento. En la presente tesis se lograron obtener los primeros avances para la fabricación de arreglos de junturas túnel que permitan el desarrollo de dispositivos.
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Single-walled carbon nanotubes (SWNTs) have been studied as a prominent class of high performance electronic materials for next generation electronics. Their geometry dependent electronic structure, ballistic transport and low power dissipation due to quasi one dimensional transport, and their capability of carrying high current densities are some of the main reasons for the optimistic expectations on SWNTs. However, device applications of individual SWNTs have been hindered by uncontrolled variations in characteristics and lack of scalable methods to integrate SWNTs into electronic devices. One relatively new direction in SWNT electronics, which avoids these issues, is using arrays of SWNTs, where the ensemble average may provide uniformity from device to device, and this new breed of electronic material can be integrated into electronic devices in a scalable fashion. This dissertation describes (1) methods for characterization of SWNT arrays, (2) how the electrical transport in these two-dimensional arrays depend on length scales and spatial anisotropy, (3) the interaction of aligned SWNTs with the underlying substrate, and (4) methods for scalable integration of SWNT arrays into electronic devices. The electrical characterization of SWNT arrays have been realized by polymer electrolyte-gated SWNT thin film transistors (TFTs). Polymer electrolyte-gating addresses many technical difficulties inherent to electrical characterization by gating through oxide-dielectrics. Having shown polymer electrolyte-gating can be successfully applied on SWNT arrays, we have studied the length scaling dependence of electrical transport in SWNT arrays. Ultrathin films formed by sub-monolayer surface coverage of SWNT arrays are very interesting systems in terms of the physics of two-dimensional electronic transport. We have observed that they behave qualitatively different than the classical conducting films, which obey the Ohm’s law. The resistance of an ultrathin film of SWNT arrays is indeed non-linear with the length of the film, across which the transport occurs. More interestingly, a transition between conducting and insulating states is observed at a critical surface coverage, which is called percolation limit. The surface coverage of conducting SWNTs can be manipulated by turning on and off the semiconductors in the SWNT array, leading to the operation principle of SWNT TFTs. The percolation limit depends also on the length and the spatial orientation of SWNTs. We have also observed that the percolation limit increases abruptly for aligned arrays of SWNTs, which are grown on single crystal quartz substrates. In this dissertation, we also compare our experimental results with a two-dimensional stick network model, which gives a good qualitative picture of the electrical transport in SWNT arrays in terms of surface coverage, length scaling, and spatial orientation, and briefly discuss the validity of this model. However, the electronic properties of SWNT arrays are not only determined by geometrical arguments. The contact resistances at the nanotube-nanotube and nanotube-electrode (bulk metal) interfaces, and interactions with the local chemical groups and the underlying substrates are among other issues related to the electronic transport in SWNT arrays. Different aspects of these factors have been studied in detail by many groups. In fact, I have also included a brief discussion about electron injection onto semiconducting SWNTs by polymer dopants. On the other hand, we have compared the substrate-SWNT interactions for isotropic (in two dimensions) arrays of SWNTs grown on Si/SiO2 substrates and horizontally (on substrate) aligned arrays of SWNTs grown on single crystal quartz substrates. The anisotropic interactions associated with the quartz lattice between quartz and SWNTs that allow near perfect horizontal alignment on substrate along a particular crystallographic direction is examined by Raman spectroscopy, and shown to lead to uniaxial compressive strain in as-grown SWNTs on single crystal quartz. This is the first experimental demonstration of the hard-to-achieve uniaxial compression of SWNTs. Temperature dependence of Raman G-band spectra along the length of individual nanotubes reveals that the compressive strain is non-uniform and can be larger than 1% locally at room temperature. Effects of device fabrication steps on the non-uniform strain are also examined and implications on electrical performance are discussed. Based on our findings, there are discussions about device performances and designs included in this dissertation. The channel length dependences of device mobilities and on/off ratios are included for SWNT TFTs. Time response of polymer-electrolyte gated SWNT TFTs has been measured to be ~300 Hz, and a proof-of-concept logic inverter has been fabricated by using polymer electrolyte gated SWNT TFTs for macroelectronic applications. Finally, I dedicated a chapter on scalable device designs based on aligned arrays of SWNTs, including a design for SWNT memory devices.
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The study of quantum degenerate gases has many applications in topics such as condensed matter dynamics, precision measurements and quantum phase transitions. We built an apparatus to create 87Rb Bose-Einstein condensates (BECs) and generated, via optical and magnetic interactions, novel quantum systems in which we studied the contained phase transitions. For our first experiment we quenched multi-spin component BECs from a miscible to dynamically unstable immiscible state. The transition rapidly drives any spin fluctuations with a coherent growth process driving the formation of numerous spin polarized domains. At much longer times these domains coarsen as the system approaches equilibrium. For our second experiment we explored the magnetic phases present in a spin-1 spin-orbit coupled BEC and the contained quantum phase transitions. We observed ferromagnetic and unpolarized phases which are stabilized by the spin-orbit coupling’s explicit locking between spin and motion. These two phases are separated by a critical curve containing both first-order and second-order transitions joined at a critical point. The narrow first-order transition gives rise to long-lived metastable states. For our third experiment we prepared independent BECs in a double-well potential, with an artificial magnetic field between the BECs. We transitioned to a single BEC by lowering the barrier while expanding the region of artificial field to cover the resulting single BEC. We compared the vortex distribution nucleated via conventional dynamics to those produced by our procedure, showing our dynamical process populates vortices much more rapidly and in larger number than conventional nucleation.
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Studies of non-equilibrium current fluctuations enable assessing correlations involved in quantum transport through nanoscale conductors. They provide additional information to the mean current on charge statistics and the presence of coherence, dissipation, disorder, or entanglement. Shot noise, being a temporal integral of the current autocorrelation function, reveals dynamical information. In particular, it detects presence of non-Markovian dynamics, i.e., memory, within open systems, which has been subject of many current theoretical studies. We report on low-temperature shot noise measurements of electronic transport through InAs quantum dots in the Fermi-edge singularity regime and show that it exhibits strong memory effects caused by quantum correlations between the dot and fermionic reservoirs. Our work, apart from addressing noise in archetypical strongly correlated system of prime interest, discloses generic quantum dynamical mechanism occurring at interacting resonant Fermi edges.
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Silicon samples were implanted with high Ti doses and subsequently processed with the pulsed-laser melting technique. The electronic transport properties in the 15–300 K range and the room temperature spectral photoresponse at energies over the bandgap were measured. Samples with Ti concentration below the insulator-metal (I-M) transition limit showed a progressive reduction of the carrier lifetime in the implanted layer as Ti dose is increased. However, when the Ti concentration exceeded this limit, an extraordinary recovery of the photoresponse was measured. This result supports the theory of intermediate band materials and is of utmost relevance for photovoltaic cells and Si-based detectors.
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This document introduces the planned new search for the neutron Electric Dipole Moment at the Spallation Neutron Source at the Oak Ridge National Laboratory. A spin precession measurement is to be carried out using Ultracold neutrons diluted in a superfluid Helium bath at T = 0.5 K, where spin polarized 3He atoms act as detector of the neutron spin polarization. This manuscript describes some of the key aspects of the planned experiment with the contributions from Caltech to the development of the project.
Techniques used in the design of magnet coils for Nuclear Magnetic Resonance were adapted to the geometry of the experiment. Described is an initial design approach using a pair of coils tuned to shield outer conductive elements from resistive heat loads, while inducing an oscillating field in the measurement volume. A small prototype was constructed to test the model of the field at room temperature.
A large scale test of the high voltage system was carried out in a collaborative effort at the Los Alamos National Laboratory. The application and amplification of high voltage to polished steel electrodes immersed in a superfluid Helium bath was studied, as well as the electrical breakdown properties of the electrodes at low temperatures. A suite of Monte Carlo simulation software tools to model the interaction of neutrons, 3He atoms, and their spins with the experimental magnetic and electric fields was developed and implemented to further the study of expected systematic effects of the measurement, with particular focus on the false Electric Dipole Moment induced by a Geometric Phase akin to Berry’s phase.
An analysis framework was developed and implemented using unbinned likelihood to fit the time modulated signal expected from the measurement data. A collaborative Monte Carlo data set was used to test the analysis methods.