Effects of thermal annealing on the semi-insulating properties of radio frequency magnetron sputtering-produced germanate thin films

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Influence of viscoelastic characteristics of the colloidal suspensions on the formation of SnO2 supported membranes

SnO2 supported membranes have been prepared by sol-casting on alumina tubular substrate, using aqueous colloidal suspensions prepared by sol-gel route. The viscoelastic behaviour during sol ageing was analyzed by dinamic rheologial measurements. The complex viscosity and the storage and loss moduli have been followed during the sol-gel transition and the results have been correlated with the linear aggregates growth and the scalar percolation models. The scanning electron microscopy has evidenced that the homogeneity and thickness of the membrane depend on the sol ageing time. Crack-free and homogeneous membranes have been obtained for coated layers of 0.5μm thickness. © 1997 Trans Tech Publications.

Electrical properties of the SnO2-based varistor

The non-linear electrical properties of CoO-doped and Nb205-doped SnO2 ceramics were characterized. X-ray diffraction and scanning electron microscopy indicated that the system is single phase. The electrical conduction mechanism for low applied electrical field was associated with thermionic emission of the Schottky type. An atomic defect model based on the Schottky double-barrier formation was proposed to explain the origin of the potential barrier at the ceramic grain boundaries. These defects create depletion layers at grain boundaries, favouring electron tunnelling at high values of applied electrical field. © 1998 Chapman & Hall.

Structural and surface morphology characterizations of oriented LiNbO3 thin films grown by polymeric precursor method

Polymeric precursor solution was used to deposit LiNbO3 thin films by dip coating on sapphire substrates. The effects of processing variables, such as heat treatment conditions and number of deposited layers, on crystallinity and morphology of the final films were investigated. X-ray diffraction patterns show the oriented growth of the films. The rocking curves, obtained around the (006) LiNbO3 peak, revealed that the shape peak and the FWHM value were influenced by the processing variables. According to these parameters, some films presented very homogeneous dense and smooth surfaces, as shown by the SEM and AFM studies.

Oxygen related defects excitation and photoconductivity dependence of SnO2 sol-gel films with several light sources

Since oxygen vacancies act as donors in SnO2, the electrical properties are related to deviation from stoichiometric composition. Depending on stoichiometry SnO2 can be highly insulating or may exhibit fairly high n-type conductivity. Since bandgap transitions are in the ultraviolet range, its photoconductivity is strongly dependent on the excitation source. We have measured variation of photoconductivity excitation with wavelength for tin dioxide grown by dip-coating sol-gel technique using several light sources: tungsten lamp, xenon, mercury and deuterium, and present selected results. The main band is obtained in the range 3-4eV according to light source spectrum in the ultraviolet range. The presence of oxygen in the cryostat also affects the spectrum since electron-hole pairs react with adsorbed oxygen specimens. © 1999 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.

Interface formation of nanostructured heterojunction SnO 2:Eu/GaAs and electronic transport properties

Thin films of tin dioxide (SnO2) are deposited by the sol-gel-dip-coating technique, along with GaAs layers, deposited by the resistive evaporation technique. The as-built heterojunction has potential application in optoelectronic devices, combining the emission from the rare-earth doped transparent oxide (Eu3+-doped SnO2 presents very efficient red emission) with a high mobility semiconductor. The advantage of this structure is the possibility of separation of the rare-earth emission centers from the electron scattering, leading to a strongly indicated combination for electroluminescence. Electrical characterization of the heterojunction SnO2:Eu/GaAs shows a significant conductivity increase when compared to the conductivity of the individual films, and the monochromatic light irradiation (266 nm) at low temperature of the heterojunction GaAs/SnO2:Eu leads to intense conductivity increase. Scanning electron microscopy (SEM) of the heterojunction cross section shows high adherence and good morphological quality of the interfaces substrate/SnO2 and SnO2/GaAs, even though the atomic force microscopy (AFM) image of the GaAs surface shows disordered particles, which increases with sample thickness. On the other hand, the good morphology of the SnO2:Eu surface, shown by AFM, assures the good electrical performance of the heterojunction. The observed improvement on the electrical transport properties is probably related to the formation of short conduction channels at the semiconductors interface, which may exhibit two-dimensional electron gas (2DEG) behavior. © 2012 Elsevier B.V. All rights reserved.

Ferroelectric and structural instability of (Pb,Ca)TiO3 thin films prepared in an oxygen atmosphere and deposited on LSCO thin films which act as a buffer layer

Structural, microstructural and ferroelectric properties of Pb0.90Ca0.10TiO3 (PCT10) thin films deposited using La0.50Sr0.50CoO3 (LSCO) thin films which serve only as a buffer layer were compared with properties of the thin films grown using a platinum-coated silicon substrate. LSCO and PCT10 thin films were grown using the chemical solution deposition method and heat-treated in an oxygen atmosphere at 700 °C and 650 °C in a tube oven, respectively. X-ray diffraction (XRD) and Raman spectroscopy results showed that PCT10 thin films deposited directly on a platinum-coated silicon substrate exhibit a strong tetragonal character while thin films with the LSCO buffer layer displayed a smaller tetragonal character. Surface morphology observations by atomic force microscopy (AFM) revealed that PCT10 thin films with a LSCO buffer layer had a smoother surface and smaller grain size compared with thin films grown on a platinum-coated silicon substrate. Additionally, the capacitance versus voltage curves and hysteresis loop measurement indicated that the degree of polarization decreased for PCT10 thin films on a LSCO buffer layer compared with PCT10 thin films deposited directly on a platinum-coated silicon substrate. This phenomenon can be described as the smaller shift off-center of Ti atoms along the c-direction 〈001〉 inside the TiO6 octahedron unit due to the reduction of lattice parameters. Remnant polarization (P r ) values are about 30 μC/cm2 and 12 μC/cm2 for PCT10/Pt and PCT10/LSCO thin films, respectively. Results showed that the LSCO buffer layer strongly influenced the structural, microstructural and ferroelectric properties of PCT10 thin films. © 2013 Elsevier Ltd and Techna Group S.r.l.

Properties of individual YBCO layers in a two-layered design for energy-efficient digital data cables

We are developing two-layered Yttrium Barium Copper Oxide (YBCO) thin film structures for energy efficient data links for superconducting electronics and present the results of their property measurements. High temperature superconductors (HTS) are advantageous for the implementation of energy-efficient cables interconnecting low temperature superconductor-based circuits and other cryogenic electronics circuits at higher temperature stages. The advantages of the HTS cables come from their low loss and low dispersion properties, allowing ballistic transfer of low power signals with very high bandwidth, low heat conduction and negligible inter-line crosstalk. The microstrip line cable geometry for typical materials is a two-layered film, in which the two superconducting layers are separated by an insulation layer with a minimized permittivity. We have made a proof of concept design of two YBCO films grown by pulsed laser deposition and then assembled into a sandwich with uniform insulating interlayer of tens of micrometers thick. We report on results obtained from such systems assembled in different ways. Structural and electromagnetic properties have been examined on individual films and on the corresponding sandwich composite. © 2013 IEEE.

Investigação de contatos elétricos e propriedades de filmes finos de SnO2 dopados com os íons terras raras Eu3+ e Ce3+

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Influência da acidez da suspensão coloidal para a geração de defeitos pontuais e emissão no infra vermelho em SnO2 dopado com Er

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Sn(1-x)LaxO2 thin films deposited on AISI 304 stainless steel substrates

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Thickness-dependent piezoelectric behaviour and dielectric properties of lanthanum modified BiFeO3 thin films

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Magnetic-size effects in ultrathin layers

We study N-layer samples (N ≤ 10) for the Heisenberg model, with ferro- and antiferromagnetic exchange couplings, using a modified version of the Onsager reaction field approximation. The present scheme includes short-range spin-spin correlations, and allows for layer-dependent order parameters when free surface boundary conditions are imposed. The limits N = 1 (two dimensions) and N → ∞ (three dimensions) can be solved analytically, while systems with several layers have to be numerically calculated. We found no indication of a phase transition at finite temperature up to the sizes investigated (N = 10), the layered systems behaving essentially as two-dimensional. A phase transition is only obtained for the three-dimensional limit. © 1993.

Desenvolvimento de sensores de gás a partir de óxido semicondutor nanoestruturado

The present work aims to study one-dimensional nanomaterials semiconductors grown via by phase systems Grande oxides Technological Interest for applications in gas sensors. The Used material was tin oxide (SnO2) for their functional properties, and the grow method was the Polymeric Precursors. The films grown were the nanomaterials about substrates of alumina, deposited via spin coating technique, followed by heat treatment at 300C for 1 hour and 650C for 2 hours. Later the films of Performance sensors (sensitivity, speed response, selectivity, and stability) will be in avaliated in a hermetic chamber with controlled atmosphere and temperature. The synthesized materials were its structural and morphological properties characterized in atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (not have this result with Me). We sought to investigate one influence of different conditions for obtaining films (Variation Layers number) in structural and microstructural properties of semiconductors oxides. The synthesis method proved very effective, generating films with micro definitely, uniformity of the nanoparticles and hum high level of porosity, what makes the material of a viable final paragraph applicability

Desenvolvimento de sensores de gás a partir de óxido semicondutor nanoestruturado

The present work aims to study one-dimensional nanomaterials semiconductors grown via by phase systems Grande oxides Technological Interest for applications in gas sensors. The Used material was tin oxide (SnO2) for their functional properties, and the grow method was the Polymeric Precursors. The films grown were the nanomaterials about substrates of alumina, deposited via spin coating technique, followed by heat treatment at 300C for 1 hour and 650C for 2 hours. Later the films of Performance sensors (sensitivity, speed response, selectivity, and stability) will be in avaliated in a hermetic chamber with controlled atmosphere and temperature. The synthesized materials were its structural and morphological properties characterized in atomic force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (not have this result with Me). We sought to investigate one influence of different conditions for obtaining films (Variation Layers number) in structural and microstructural properties of semiconductors oxides. The synthesis method proved very effective, generating films with micro definitely, uniformity of the nanoparticles and hum high level of porosity, what makes the material of a viable final paragraph applicability