Defect analysis of semiconductor thin films for photovoltaic applications using photo-luminescence and photo-conductivity

The present thesis can be divided into three areas:1) the fabrication of a low temperature photo-luminescence and photoconductivity measuring unit 2) photo-luminescence in the chalcopyrite CulnSez and CulnS2 system for defect and composition analysis and 3) photo-luminescence and photo-conductivity of In:JS3. This thesis shows that photo-luminescence is one of most essential semiconductor characterization tool for a scientific group working on photovoltaics. Tools which can be robust, non-destructive, requiring minimal sample preparation for analysis and most informative of the device applications are sought after by industries and this thesis is towards establishing photo-luminescence as "THE" tool for semiconductor characterization. The possible application of photo-luminescence as a tool for compositional and quality analysis of semiconductor thin films has been worked upon by this thesis. Photo-conductivity complement photo-luminescence and together they provide all the information required for the fabrication of an opto-electronic device.

Synchronization and control of chaos in coupled chaotic multimode Nd:YAG lasers

In this Letter we numerically investigate the dynamics of a system of two coupled chaotic multimode Nd:YAG lasers with two mode and three mode outputs. Unidirectional and bidirectional coupling schemes are adopted; intensity time series plots, phase space plots and synchronization plots are used for studying the dynamics. Quality of synchronization is measured using correlation index plots. It is found that for laser with two mode output bidirectional direct coupling scheme is found to be effective in achieving complete synchronization, control of chaos and amplification in output intensity. For laser with three mode output, bidirectional difference coupling scheme gives much better chaotic synchronization as compared to unidirectional difference coupling but at the cost of higher coupling strength. We also conclude that the coupling scheme and system properties play an important role in determining the type of synchronization exhibited by the system.

Control of bistability in a directly modulated semiconductor laser using delayed optoelectronic feedback

We show numerically that direct delayed optoelectronic feedback can suppress hysteresis and bistability in a directly modulated semiconductor laser. The simulation of a laser with feedback is performed for a considerable range of feedback strengths and delays and the corresponding values for the areas of the hysteresis loops are calculated. It is shown that the hysteresis loop completely vanishes for certain combinations of these parameters. The regimes for the disappearance of bistability are classified globally. Different dynamical states of the laser are characterized using bifurcation diagrams and time series plots.

Dynamics of two coupled chaotic multimode Nd:YAG lasers with intracavity frequency doubling crystal

The effect of coupling two chaotic Nd:YAG lasers with intracavity KTP crystal for frequency doubling is numerically studied for the case of the laser operating in three longitudinal modes. It is seen that the system goes from chaotic to periodic and then to steady state as the coupling constant is increased. The intensity time series and phase diagrams are drawn and the Lyapunov characteristic exponent is calculated to characterize the chaotic and periodic regions.

Metastable States and Irregular Behaviour in a Josephson Junction with Nonlinear Resistance

We consider a resistively shunted Josephson junction with a resistance that depends inversely on voltage. It is shown that such a junction in the underdamped case can give rise to extremely long-lived metastable states even in the absence of external noise. We investigate numerically this metastable state and its transition to a chaotic state. The junction voltages corresponding to these states are studied.

Creation and Annihilation of Fluxons in ac‐driven Semi-annular Josephson Junction

A new geometry (semiannular) for Josephson junction has been proposed and theoretical studies have shown that the new geometry is useful for electronic applications [1, 2]. In this work we study the voltage‐current response of the junction with a periodic modulation. The fluxon experiences an oscillating potential in the presence of the ac‐bias which increases the depinning current value. We show that in a system with periodic boundary conditions, average progressive motion of fluxon commences after the amplitude of the ac drive exceeds a certain threshold value. The analytic studies are justified by simulating the equation using finite‐difference method. We observe creation and annihilation of fluxons in semiannular Josephson junction with an ac‐bias in the presence of an external magnetic field.

Semiclassical theory of shot noise in ballistic n+in+ semiconductor structures: relevance of Pauli and long range Coulomb interactions

We work out a semiclassical theory of shot noise in ballistic n+-i-n+ semiconductor structures aiming at studying two fundamental physical correlations coming from Pauli exclusion principle and long-range Coulomb interaction. The theory provides a unifying scheme which, in addition to the current-voltage characteristics, describes the suppression of shot noise due to Pauli and Coulomb correlations in the whole range of system parameters and applied bias. The whole scenario is summarized by a phase diagram in the plane of two dimensionless variables related to the sample length and contact chemical potential. Here different regions of physical interest can be identified where only Coulomb or only Pauli correlations are active, or where both are present with different relevance. The predictions of the theory are proven to be fully corroborated by Monte Carlo simulations.

Development of semiconductor metal oxide gas sensors for the detection of NO2 and H2S gases

One of the main challenges in the development of metal-oxide gas sensors is enhancement of selectivity to a particular gas. Currently, two general approaches exist for enhancing the selective properties of sensors. The first one is aimed at preparing a material that is specifically sensitive to one compound and has low or zero cross-sensitivity to other compounds that may be present in the working atmosphere. To do this, the optimal temperature, doping elements, and their concentrations are investigated. Nonetheless, it is usually very difficult to achieve an absolutely selective metal oxide gas sensor in practice. Another approach is based on the preparation of materials for discrimination between several analyte in a mixture. It is impossible to do this by using one sensor signal. Therefore, it is usually done either by modulation of sensor temperature or by using sensor arrays. The present work focus on the characterization of n-type semiconducting metal oxides like Tungsten oxide (WO3), Zinc Oxide (ZnO) and Indium oxide (In2O3) for the gas sensing purpose. For the purpose of gas sensing thick as well as thin films were fabricated. Two different gases, NO2 and H2S gases were selected in order to study the gas sensing behaviour of these metal oxides. To study the problem associated with selectivity the metal oxides were doped with metals and the gas sensing characteristics were investigated. The present thesis is entitled “Development of semiconductor metal oxide gas sensors for the detection of NO2 and H2S gases” and consists of six chapters.

Multifractal dimension of chaotic attractors in a driven semiconductor superlattice

The multifractal dimension of chaotic attractors has been studied in a weakly coupled superlattice driven by an incommensurate sinusoidal voltage as a function of the driving voltage amplitude. The derived multifractal dimension for the observed bifurcation sequence shows different characteristics for chaotic, quasiperiodic, and frequency-locked attractors. In the chaotic regime, strange attractors are observed. Even in the quasiperiodic regime, attractors with a certain degree of strangeness may exist. From the observed multifractal dimensions, the deterministic nature of the chaotic oscillations is clearly identified.

An investigation on the electrical characteristics of antimony trisulphide films and certain metal semiconductor (Sb2S3) contacts

The Thesis consist of the study of the electrical properties of antimony trisulphide films and the electrical behaviour of different metal contacts to antimony trisulphide films. Since the thermal evapouration of the compound antimony trisulphide as such mayresult in nonstoichiometric compound films , sb2s3 films in the present work were mostly prepared by the three temperature method ,keeping the substrate at different temperature ranging from 3031 to 4231 and evapourating antimony and sulphur simultaneously from separate sources.

Investigations On The Electrical Characteristics Of Certain Semiconductor Films And Polymerized Para-Toluidine Films

The thesis is a report of the attempts made to prepare semiconducting and dielectric thin films and to study their electrical properties. It consists of (i) studies on the preparation and electrical characteristics of compound semiconductor thin films of silver sulphide and ferric hydroxide, and (ii) investigations on the electrical and dielectric properties of plasma polymerized thin films of para-toluidine element

Photoluminescence studies of spray pyrolytically grown nanostructured tin oxide semiconductor thin films on glass substrates

SnO2 nanocrystalline thin films were deposited on glass substrates by the spray pyrolysis technique in air atmosphere at 375, 400, 425, 450 and 500 ◦C substrate temperatures. The obtained films were characterized by using XRD. The room temperature photoluminescence (PL) spectra of these films have near band edge (NBE) and deep level emission under the excitation of 325 nm radiation. NBE PL peak intensity decreased consistently with temperatures for samples prepared at 400, 450 and 500 ◦C, while a sudden reduction in intensity is observed for the sample prepared at 425 ◦C. A similar effect was observed for the optical transmittance spectra. These effects can be explained on the basis of the change in population of oxygen vacancies as indicated by the change in a values

Induction of mitotic aberrations by Argon ion lasers in Vicia faba L. and Allium cepa L.

A comparat ive study of the effect oflaser in inducing chro mosomal aberrat ions at 4gg nm was done in View j aba L. (faba bean) and Allium ccpa L. (onion) with Argon ion laser (Spectra Physics Model 171). Seeds and bulbs of V.jaba and A. eepa were subjected to laser irra diation by 4gg nm excitations from Argon ion laser source at power levels 200 and 400 mW with power densities 2.25 mW em" and 4.49 mW em" and ditTerent exposure times (10, 20, 30 & 40 minutes). Similar to the effect of oth er physical and chemical mutagens, laser caused a dose dependent decrease in mitotic index and a rise in mitotic aberrations when compared to the control. In both plant species, mutations were observed in all stages of mitotic cell cycle. The total percentage of aberrations was two fold higher at 400 mW than at 200 mW exposure.

Model Calculations and Implementation of Filters and Hybrid Green VCSELs based on Optical Thin Film Stacks

This work introduced the novel conception of complex coupled hybrid VCSELs for the first time. Alternating organic and inorganic layers in the lasers provide periodic variation of refractive index and optical gain, which enable single mode operation and low threshold of the VCSELs. Model calculations revealed great reduction of the lasing threshold with factors over 30, in comparison with the existing micro-cavity lasers. Tunable green VCSEL has been also designed, implemented and analyzed taking advantage of the broad photoluminescence spectra of the organics. Free standing optical thin films without compressive stress are technologically implemented. Multiple membrane stacks with air gap in between have been fabricated for the implementation of complex coupled VCSEL structures. Complex coupled hybrid VCSEL is a very promising approach to fill the gaps in the green spectral range of the semiconductor lasers.

Absorptionsspektrometrie in der Kavität eines Halbleiterlasers unter Ausnutzung der Modenkonkurrenz zwischen zwei Moden

Motivation dieser Arbeit ist die Idee, ein höchst sensitives und selektives Spektroskop, welches gleichzeitig robust ist, auf Basis von Halbleiterlasern zum Einsatz in der Atemgasdiagnostik zu entwickeln. Technische Grundlage ist die Idee, die Probe innerhalb des Laserresonators zu vermessen (sogenannte intra cavity absorption spectroscopy, ICAS). Im speziellen soll durch die Verwendung des relativen Intensitätsrauschens zur Messwertbestimmung und die Verwendung von nur zwei Moden statt der sonst für ICAS verwendeten multimodigen Laser, die Empfindlichkeit erhöht, sowie die Messwerterfassung vereinfacht werden. Die Probe im Laserresonator zu Messen, hat den Vorteil, dass durch die multiple Hin­ und Rückreflektion die wirksame Pfadlänge durch die Probe vervielfacht wird. Dabei werden Verluste an den Resonatorspiegeln durch die Verstärkung der aktiven Zone des Lasers kompensiert. Außerdem wird durch die Konkurrenz der Moden um die idealerweise homogen verbreiterte Verstärkung im Laser die Empfindlichkeit noch einmal bedeutend erhöht. Schon eine geringe Absorption bei einer bestimmten Wellenlänge wird die Intensität des betroffenen Modes zugunsten der anderen Moden verringern. Die Arbeit beschäftigt sich zum einen mit der spektroskopischen Untersuchung zwei- er für die Atemgasdiagnostik relevanter Stoffe, Aceton und das in der Anästhesie häufig eingesetzte Propofol, um das Umfeld, in dem der Laser Verwendung finden soll, zu beleuchten. Diese Untersuchungen flossen in die Entwicklung des später zum Sensor auszubauenden Lasers ein. Für den Laser wurden in der Telekommunikation übliche, glasfaserbasierte, robuste Standardbauteile wie ein optischer Halbleiterverstärker (semiconductor optical amplifier, SOA), Faserkoppler und Faser­Bragg­Gitter verwendet. Die Bauteile wurden charakterisiert. Teilaspekte des Aufbaus wurden mit der Software CAMFR simuliert. Schließlich wurde der Laser als solcher aufgebaut und charakterisiert. Das Ziel der Zweimodigkeit, in einem Intervall von 2 nm durchstimmbar, konnte erreicht werden. An einem vom Heinrich­Hertz­Institut in Berlin entwickelten zweimodigen Halbleiterlasers wurden Untersuchungen der Idee zur Vereinfachung der Messwerterfassung mittels relativen Intensitätsrauschens (relative intensity noise, RIN) durchgeführt. Als Messgröße stellt das RIN die Amplituden der Intensitätsschwankungen des Lasers gegen die Frequenzen der Intensitätsschwankungen als Rauschspektrum dar. Es konnte nachgewiesen werden, dass das Rauschspektrum charakteristisch für das Oszillationsverhalten des Lasers ist.