Effective-mass theory for coupled quantum dots grown on (11N)-oriented substrates

The electronic structures of coupled quantum dots grown on (11N)-oriented substrates are studied in the framework of effective-mass envelope-function theory. The results show that the all-hole subbands have the smallest widths and the optical properties are best for the (113), (114), and (115) growth directions. Our theoretical results agree with the available experimental data. Our calculated results are useful for the application of coupled quantum dots in photoelectric devices.

Optical properties of GaN wurtzite quantum wires

The electronic structure and optical properties of freestanding GaN wurtzite quantum wires are studied in the framework of six-band effective-mass envelope function theory. It is found that the electron states are either twofold or fourfold degenerate. There is a dark exciton effect when the radius R of GaN wurtzite quantum wires is in the range of [0.7, 10.9] nm. The linear polarization factors are calculated in three cases, the quantum confinement effect (finite long wire), the dielectric effect and both effects (infinitely long wire). It is found that the linear polarization factor of a finite long wire whose length is much less than the electromagnetic wavelength decreases as R increases, is very close to unity (0.979) at R = I nm, and changes from a positive value to a negative value around R = 4.1 nm. The linear polarization factor of the dielectric effect is 0.934, independent of radius, as long as the radius remains much less than the electromagnetic wavelength. The result for the two effects shows that the quantum confinement effect gives a correction to the dielectric effect result. It is found that the linear polarization factor of very long (treated approximately as infinitely long) quantum wires is in the range of [0.8, 1]. The linear polarization factors of the quantum confinement effect of CdSe wurtzite quantum wires are calculated for comparison. In the CdSe case, the linear polarization factor of R = I nm is 0.857, in agreement with the experimental results (Hu et al 2001 Science 292 2060). This value is much smaller than unity, unlike 0.979 in the GaN case, mainly due to the big spin-orbit splitting energy Delta(so) of CdSe material with wurtzite structure.

Theory of ultrafast optical manipulation of electron spins in quantum wells

Based on a multiparticle-state stimulated Raman adiabatic passage approach, a comprehensive theoretical study of the ultrafast optical manipulation of electron spins in quantum wells is presented. In addition to corroborating experimental findings [Gupta , Science 292, 2458 (2001)], we improve the expression for the optical-pulse-induced effective magnetic field, in comparison with the one obtained via the conventional single-particle ac Stark shift. Further study of the effect of hole-spin relaxation reveals that, while the coherent optical manipulation of electron spin in undoped quantum wells would deteriorate in the presence of relatively fast hole-spin relaxation, the coherent control in doped systems can be quite robust against decoherence. The implications of the present results on quantum dots will also be discussed. (c) 2005 American Institute of Physics.

Resonant tunneling theory of planar quantum dot structures

The ballistic transport in the semiconductor, planar, circular quantum dot structures is studied theoretically. The transmission probabilities show apparent resonant tunneling peaks, which correspond to energies of bound states in the dot. By use of structures with different angles between the inject and exit channels, the resonant peaks can be identified very effectively. The perpendicular magnetic field has obvious effect on the energies of bound states in the quantum dot, and thus the resonant peaks. The treatment of the boundary conditions simplifies the problem to the solution of a set of linear algebraic equations. The theoretical results in this paper can be used to design planar resonant tunneling devices, whose resonant peaks are adjustable by the angle between the inject and exit channels and the applied magnetic field. The resonant tunneling in the circular dot structures can also be used to study the bound states in the absence and presence of magnetic field.

EFFECTIVE-MASS THEORY FOR GAAS/GA1-XALXAS QUANTUM WIRES AND CORRUGATED SUPERLATTICES GROWN ON (311)-ORIENTED SUBSTRATES

The electronic structures of GaAs/Ga1-xAlxAs quantum wires (corrugated superlattices) grown on (311)-oriented substrates are studied in the framework of the effective-mass envelope-function method. The electron and hole subband structure and optical transition matrix elements are calculated. When x=1, the results are compared with experiments, and it is found that the direct transition becomes an indirect transition as the widths of well and barrier become smaller.

Effective-mass theory for InAs/GaAs strained coupled quantum dots

In the framework of effective-mass envelope-function theory, the optical transitions of InAs/GaAs strained coupled quantum dots grown on GaAs (100) oriented substrates are studied. At the Gamma point, the electron and hole energy levels, the distribution of electron and hole wave functions along the growth and parallel directions, the optical transition-matrix elements, the exciton states, and absorption spectra are calculated. In calculations, the effects due to the different effective masses of electrons and holes in different materials are included. Our theoretical results are in good agreement with the available experimental data.

ENHANCEMENT EFFECT OF PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITED SIN CAPPING LAYER ON DIELECTRIC CAP QUANTUM-WELL DISORDERING

Quantum well disordering of GaAs/AlGaAs multiple quantum well(MQW) has been accomplished with only plasma enhanced chemical vapor deposited (PECVD) SiN cap layer growth. The amount of blue shift increases with SiN growing time. This result has been explained by the vacancy indiffusion during PECVD SiN growth. Rapid thermal annealing (RTA) of the sample after SiN cap layer growth at 850 degrees C for 35 s caused a larger amount of blue shift than those obtained without RTA. By considering the model of Al diffusion from AlGaAs barrier into GaAs QWs together with the result from photoluminescence (PL) measurement, Al diffusion coefficients were calculated. The Al diffusion coefficient due to PECVD SiN was estimated at about 3 x10(-17) cm(2)/s. It was possible to extract the effect of RTA on the QW disordering, which showed that the amount of the blue shift and the Al diffusion coefficient due only to RTA increases with SiN cap layer thickness as reported by Chi et al.(10))

Self-consistent non-Markovian theory of a quantum-state evolution for quantum-information processing

We study non-Markovian decoherence phenomena by employing projection-operator formalism when a quantum system (a quantum bit or a register of quantum bits) is coupled to a reservoir. By projecting out the degree of freedom of the reservoir, we derive a non-Markovian master equation for the system, which is reduced to a Lindblad master equation in Markovian limit, and obtain the operator sum representation for the time evolution. It is found that the system is decohered slower in the non- Markovian reservoir than the Markovian because the quantum information of the system is memorized in the non-Markovian reservoir. We discuss the potential importance of non-Markovian reservoirs for quantum-information processing.

Does Chance hide Necessity? : a reevaluation of the debate ‘determinism - indeterminism’ in the light of quantum mechanics and probability theory

Dans cette thèse l’ancienne question philosophique “tout événement a-t-il une cause ?” sera examinée à la lumière de la mécanique quantique et de la théorie des probabilités. Aussi bien en physique qu’en philosophie des sciences la position orthodoxe maintient que le monde physique est indéterministe. Au niveau fondamental de la réalité physique – au niveau quantique – les événements se passeraient sans causes, mais par chance, par hasard ‘irréductible’. Le théorème physique le plus précis qui mène à cette conclusion est le théorème de Bell. Ici les prémisses de ce théorème seront réexaminées. Il sera rappelé que d’autres solutions au théorème que l’indéterminisme sont envisageables, dont certaines sont connues mais négligées, comme le ‘superdéterminisme’. Mais il sera argué que d’autres solutions compatibles avec le déterminisme existent, notamment en étudiant des systèmes physiques modèles. Une des conclusions générales de cette thèse est que l’interprétation du théorème de Bell et de la mécanique quantique dépend crucialement des prémisses philosophiques desquelles on part. Par exemple, au sein de la vision d’un Spinoza, le monde quantique peut bien être compris comme étant déterministe. Mais il est argué qu’aussi un déterminisme nettement moins radical que celui de Spinoza n’est pas éliminé par les expériences physiques. Si cela est vrai, le débat ‘déterminisme – indéterminisme’ n’est pas décidé au laboratoire : il reste philosophique et ouvert – contrairement à ce que l’on pense souvent. Dans la deuxième partie de cette thèse un modèle pour l’interprétation de la probabilité sera proposé. Une étude conceptuelle de la notion de probabilité indique que l’hypothèse du déterminisme aide à mieux comprendre ce que c’est qu’un ‘système probabiliste’. Il semble que le déterminisme peut répondre à certaines questions pour lesquelles l’indéterminisme n’a pas de réponses. Pour cette raison nous conclurons que la conjecture de Laplace – à savoir que la théorie des probabilités présuppose une réalité déterministe sous-jacente – garde toute sa légitimité. Dans cette thèse aussi bien les méthodes de la philosophie que de la physique seront utilisées. Il apparaît que les deux domaines sont ici solidement reliés, et qu’ils offrent un vaste potentiel de fertilisation croisée – donc bidirectionnelle.

Multipole Theory Analysis of Cutoff Wavenumbers of Waveguides Partially Filled with Dielectric

A new approach, the multipole theory (MT) method, is presented for the computation of cutoff wavenumbers of waveguides partially filled with dielectric. The MT formulation of the eigenvalue problem of an inhomogeneous waveguide is derived. Representative computational examples, including dielectric-rod-loaded rectangular and double-ridged waveguides, are given to validate the theory, and to demonstrate the degree of its efficiency