980 resultados para Power Semiconductor Devices


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The high active and reactive power level demanded by the distribution systems, the growth of consuming centers, and the long lines of the distribution systems result in voltage variations in the busses compromising the quality of energy supplied. To ensure the energy quality supplied in the distribution system short-term planning, some devices and actions are used to implement an effective control of voltage, reactive power, and power factor of the network. Among these devices and actions are the voltage regulators (VRs) and capacitor banks (CBs), as well as exchanging the conductors sizes of distribution lines. This paper presents a methodology based on the Non-Dominated Sorting Genetic Algorithm (NSGA-II) for optimized allocation of VRs, CBs, and exchange of conductors in radial distribution systems. The Multiobjective Genetic Algorithm (MGA) is aided by an inference process developed using fuzzy logic, which applies specialized knowledge to achieve the reduction of the search space for the allocation of CBs and VRs.

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The system reliability depends on the reliability of its components itself. Therefore, it is necessary a methodology capable of inferring the state of functionality of these components to establish reliable indices of quality. Allocation models for maintenance and protective devices, among others, have been used in order to improve the quality and availability of services on electric power distribution systems. This paper proposes a methodology for assessing the reliability of distribution system components in an integrated way, using probabilistic models and fuzzy inference systems to infer about the operation probability of each component. © 2012 IEEE.

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Germanium- and tellurium-based glasses have been largely studied due to their recognized potential for photonics. In this paper, we review our recent studies that include the investigation of the Stokes and anti-Stokes photoluminescence (PL) in different glass systems containing metallic and semiconductor nanoparticles (NPs). In the case of the samples with metallic NPs, the enhanced PL was attributed to the increased local field on the rare-earth ions located in the proximity of the NPs and/or the energy transfer from the metallic NPs to the rare-earth ions. For the glasses containing silicon NPs, the PL enhancement was mainly due to the energy transfer from the NPs to the Er3+ ions. The nonlinear (NL) optical properties of PbO-GeO 2 films containing gold NPs were also investigated. The experiments in the pico- and subpicosecond regimes revealed enhanced values of the NL refractive indices and large NL absorption coefficients in comparison with the films without gold NPs. The reported experiments demonstrate that germanate and tellurite glasses, having appropriate rare-earth ions doping and NPs concentration, are strong candidates for PL-based devices, all-optical switches, and optical limiting. © 2013 Cid Bartolomeu de Araujo et al.

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

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Polymeric insulation is an increasing tendency in projects and maintenance of electrical networks for power distribution and transmission. Electrical power devices (e. g., insulators and surge arresters) developed by using polymeric insulation presents many advantages compared to the prior power components using ceramic insulation, such as: a better performance under high pollution environment; high hydrophobicity; high resistance to mechanical, electrical and chemical stresses. The practice with silicone insulators in polluted environments has shown that the ideal performance is directly related to insulator design and polymer formulation. One of the most common misunderstandings in the design of silicone compounds for insulators is the amount of inorganic load used in their formulation. This paper attempts to clarify how the variation of the inorganic load amount affects physicochemical characteristics of different silicone compounds. The physicochemical evaluation is performed from several measurements, such as: density, hardness, elongation, tensile strength. In addition, the evaluation of the physicochemical structure is carried out using infrared test and scanning electronic microscopy (SEM). The electrical analysis is performed from the electric tracking wheel and erosion test, in agreement with the recommendation of the International Electrotechnical Commission (IEC). (C) 2014 Elsevier Ltd. All rights reserved.

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A self-learning simulated annealing algorithm is developed by combining the characteristics of simulated annealing and domain elimination methods. The algorithm is validated by using a standard mathematical function and by optimizing the end region of a practical power transformer. The numerical results show that the CPU time required by the proposed method is about one third of that using conventional simulated annealing algorithm.

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Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.

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Purpose - The purpose of this paper is to develop an efficient numerical algorithm for the self-consistent solution of Schrodinger and Poisson equations in one-dimensional systems. The goal is to compute the charge-control and capacitance-voltage characteristics of quantum wire transistors. Design/methodology/approach - The paper presents a numerical formulation employing a non-uniform finite difference discretization scheme, in which the wavefunctions and electronic energy levels are obtained by solving the Schrodinger equation through the split-operator method while a relaxation method in the FTCS scheme ("Forward Time Centered Space") is used to solve the two-dimensional Poisson equation. Findings - The numerical model is validated by taking previously published results as a benchmark and then applying them to yield the charge-control characteristics and the capacitance-voltage relationship for a split-gate quantum wire device. Originality/value - The paper helps to fulfill the need for C-V models of quantum wire device. To do so, the authors implemented a straightforward calculation method for the two-dimensional electronic carrier density n(x,y). The formulation reduces the computational procedure to a much simpler problem, similar to the one-dimensional quantization case, significantly diminishing running time.

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This paper describes a CMOS implementation of a linear voltage regulator (LVR) used to power up implanted physiological signal systems, as it is the case of a wireless blood pressure biosensor. The topology is based on a classical structure of a linear low-dropout regulator. The circuit is powered up from an RF link, thus characterizing a passive radio frequency identification (RFID) tag. The LVR was designed to meet important features such as low power consumption and small silicon area, without the need for any external discrete components. The low power operation represents an essential condition to avoid a high-energy RF link, thus minimizing the transmitted power and therefore minimizing the thermal effects on the patient's tissues. The project was implemented in a 0.35-mu m CMOS process, and the prototypes were tested to validate the overall performance. The LVR output is regulated at 1 V and supplies a maximum load current of 0.5 mA at 37 degrees C. The load regulation is 13 mV/mA, and the line regulation is 39 mV/V. The LVR total power consumption is 1.2 mW.

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Piezoelectric materials can be used to convert oscillatory mechanical energy into electrical energy. Energy harvesting devices are designed to capture the ambient energy surrounding the electronics and convert it into usable electrical energy. The design of energy harvesting devices is not obvious, requiring optimization procedures. This paper investigates the influence of pattern gradation using topology optimization on the design of piezocomposite energy harvesting devices based on bending behavior. The objective function consists of maximizing the electric power generated in a load resistor. A projection scheme is employed to compute the element densities from design variables and control the length scale of the material density. Examples of two-dimensional piezocomposite energy harvesting devices are presented and discussed using the proposed method. The numerical results illustrate that pattern gradation constraints help to increase the electric power generated in a load resistor and guides the problem toward a more stable solution. (C) 2012 Elsevier Ltd. All rights reserved.

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This work examines the effect of copper nanoparticles (Cu NPs) on the photocurrent efficiency of silicon photovoltaic (Si PV) devices. An optimized synthesis of stable Cu NPs is reported together with a procedure for their immobilization on the Si PV surface. A comprehensive analysis of the photocurrent and power dependence of the Cu NPs surface coverage and size is presented. A decrease in photoconversion was observed for wavelengths shorter than similar to 500 nm, due to the Cu interband absorption. In the low surface coverage limit, where the level of aggregation was found to be low, the surface plasmon resonance absorption dominates leading to a modest effect on the photocurrent response. As the number of aggregates increased with the surface coverage, the photocurrent efficiency also increased, and a maximum enhancement power conversion of 16% was found for a 54 +/- 6 NPs per mu m(2) PV cell. This enhancement was attributed to SPR light scattering and trapping into the Si PV device. Higher surface coverage yielded numerous aggregates which acted as a bulk coating and caused a decrease in both photocurrent and power measurements.

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In recent years, there was an increase of ancillary service loads, such as signaling systems, inspection robots, surveillance cameras, and other monitoring devices distributed along high-voltage transmission lines which require low-power dc voltage supplies. This paper investigates the use of the induced voltage in the shield wires of an overhead 525 kV transmission line as a primary power source. Since phase current variations throughout the day affect the induced voltage in the overhead ground wire, a step-down dc-dc converter is used after rectification of the ac voltage to provide a regulated dc output voltage. The initial encouraging results obtained indicate that this form of power supply can be a feasible and cost-effective alternative for feeding small ancillary service loads. The simulation results are validated by field measurements as well as the installation of a 200 W voltage stabilization system prototype.

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Tailoring properties of materials by femtosecond laser processing has been proposed in the last decade as a powerful approach for technological applications, ranging from optics to biology. Although most of the research output in this field is related to femtosecond laser processing of single either organic or inorganic materials, more recently a similar approach has been proposed to develop advanced hybrid nanomaterials. Here, we report results on the use of femtosecond lasers to process hybrid nanomaterials, composed of polymeric and glassy matrices containing metal or semiconductor nanostructures. We present results on the use of femtosecond pulses to induce Cu and Ag nanoparticles in the bulk of borate and borosilicate glasses, which can be applied for a new generation of waveguides. We also report on 3D polymeric structures, fabricated by two-photon polymerization, containing Au and ZnO nanostructures, with intense two-photon fluorescent properties. The approach based on femtosecond laser processing to fabricate hybrid materials containing metal or semiconductor nanostructures is promising to be exploited for optical sensors and photonics devices.