Transient response of structures with uncertain properties to nonlinear shock loading

A method is presented to predict the transient response of a structure at the driving point following an impact or a shock loading. The displacement and the contact force are calculated solving the discrete convolution between the impulse response and the contact force itself, expressed in terms of a nonlinear Hertzian contact stiffness. Application of random point process theory allows the calculation of the impulse response function from knowledge of the modal density and the geometric characteristics of the structure only. The theory is applied to a wide range of structures and results are experimentally verified for the case of a rigid object hitting a beam, a plate, a thin and a thick cylinder and for the impact between two cylinders. The modal density of the flexural modes for a thick slender cylinder is derived analytically. Good agreement is found between experimental, simulated and published results, showing the reliability of the method for a wide range of situations including impacts and pyroshock applications. © 2013 Elsevier Ltd. All rights reserved.

Transient crosstalk in LCOS based WSS and a method to suppress the crosstalk levels

The origin of the transient crosstalk (TC) in a phase-only LCOS based WSS using a Fourier transform setup was investigated and identified. Two methods were proposed to reduce the TC by at least 5dB without the need to modify the optics or electronics in use. © 2013 OSA.

Transient reflectivity on vertically aligned single-wall carbon nanotubes

One-color transient reflectivity measurements are carried out on two different samples of vertically aligned single-wall carbon nanotube bundles and compared with the response recently published on unaligned bundles. The negative sign of the optical response for both samples indicates that the free electron character revealed on unaligned bundles is only due to the intertube interactions favored by the tube bending. Neither the presence of bundles nor the existence of structural defects in aligned bundles is able to induce a free-electron like behavior of the photoexcited carriers. This result is also confirmed by the presence of non-linear excitonic effects in the transient response of the aligned bundles. © 2013 Elsevier B.V.

Predicting the response of structures to transient shock loading.

This work concerns the prediction of the response of an uncertain structure to a load of short duration. Assuming an ensemble of structures with small random variations about a nominal form, a mean impulse response can be found using only the modal density of the structure. The mean impulse response turns out to be the same as the response of an infinite structure: the response is calculated by taking into account the direct field only, without reflections. Considering the short duration of an impulsive loading, the approach is reasonable before the effect of the reverberant field becomes important. The convolution between the mean impulse response and the shock loading is solved in discrete time to calculate the response at the driving point and at remote points. Experimental and numerical examples are presented to validate the theory presented for simple structures such as beams, plates, and cylinders.

Transient Crosstalk in LCOS Based WSS and a Method to Suppress the Crosstalk Levels

The origin of the transient crosstalk (TC) in a phase-only LCOS based WSS using a Fourier transform setup was investigated and identified. Two methods were proposed to reduce the TC by at least 5dB without the need to modify the optics or electronics in use. © 2013 OSA.

Origin of transient crosstalk and its reduction in phase-only LCOS wavelength selective switches

The transient crosstalk in a phase-only liquid crystal on silicon (LCOS) based wavelength selective switch using a Fourier transform setup was investigated. Its origin was identified using an in situ test procedure and found to be related to the transient phase patterns displayed by the LCOS device during the switching. Two different methods were proposed to reduce the transient crosstalk without the need to modify the optics or electronics in use. Experimental results show both methods are able to reduce the worst-case transient crosstalk by at least 5 dB. © 1983-2013 IEEE.

Transient ventilation dynamics induced by heat sources of unequal strength

We examine theoretically the transient displacement flow and density stratification that develops within a ventilated box after two localized floor-level heat sources of unequal strengths are activated. The heat input is represented by two non-interacting turbulent axisymmetric plumes of constant buoyancy fluxes B1 and B2 > B1. The box connects to an unbounded quiescent external environment of uniform density via openings at the top and base. A theoretical model is developed to predict the time evolution of the dimensionless depths λj and mean buoyancies δj of the 'intermediate' (j = 1) and 'top' (j = 2) layers leading to steady state. The flow behaviour is classified in terms of a stratification parameter S, a dimensionless measure of the relative forcing strengths of the two buoyant layers that drive the flow. We find that dδ1/dτ α 1/λ1 and dδ2/dτ α 1/λ2, where τ is a dimensionless time. When S 1, the intermediate layer is shallow (small λ1), whereas the top layer is relatively deep (large λ2) and, in this limit, δ1 and δ2 evolve on two characteristically different time scales. This produces a time lag and gives rise to a 'thermal overshoot', during which δ1 exceeds its steady value and attains a maximum during the transients; a flow feature we refer to, in the context of a ventilated room, as 'localized overheating'. For a given source strength ratio ψ = B1/B2, we show that thermal overshoots are realized for dimensionless opening areas A < Aoh and are strongly dependent on the time history of the flow. We establish the region of {A, ψ} space where rapid development of δ1 results in δ1 > δ2, giving rise to a bulk overturning of the buoyant layers. Finally, some implications of these results, specifically to the ventilation of a room, are discussed. © Cambridge University Press 2013.

Transient terahertz spectroscopy of mono- and tri-layer CVD-grown MoS 2

Molybdenum disulpide, a novel two-dimensional semiconductor, was studied using optical-pump terahertz-probe spectroscopy. Mono and trilayer samples grown by chemical vapour deposition were compared to reveal their dynamic electrical response. © 2013 IEEE.

Transient Reorientation of a Doped Liquid Crystal System under a Short Laser Pulse

The transient optical nonlinearity of a nematic liquid crystal doped with azo-dye DR19 is examined. The optical reorientation threshold of a 25-mu m-thick planar-aligned sample of 5CB using a 50 ns pulse duration 532 nm YAG laser pulse is observed to decrease from 800 mJ/mm(2) to 0.6 mJ/mm(2) after the addition of 1 vol% azo dopant, a reduction of three orders of magnitude. When using a laser pulse duration of 10 ns, no such effect is observed. Experimental results indicate that the azo dopant molecules undergo photoisomerization from trans-isomer to cis-isomer under exposure to light, and this conformation change reorients the 5CB molecules via intermolecular coupling between guest and host. This guest-host coupling also affects the azo photoisomerization process.

Deep level transient spectroscopy studies of Er and Pr implanted GaN films

Deep level transient spectroscopy measurements were used to characterize the electrical properties of metal organic chemical vapor deposition grown undoped, Er-implanted and Pr-implanted GaN films. Only one deep level located at 0.270 eV below the conduction band was found in the as-grown GaN films. But four defect levels located at 0.300 eV, 0.188 eV, 0.600 eV and 0.410 eV below the conduction band were found in the Er-implanted GaN films after annealing at 900 degrees C for 30 min, and four defect levels located at 0.280 eV, 0.190 eV, 0.610 eV and 0.390 eV below the conduction band were found in the Pr-implanted GaN films after annealing at 1050 degrees C for 30min. The origins of the deep defect levels are discussed. After annealing at 900 degrees C for 30min in a nitrogen flow, Er-related 1538nm luminescence peaks could be observed for the Er-implanted GaN sample. The energy-transfer and luminescence mechanism of the Er-implanted GaN film are described.

Transient photoconductivity and its light-induced change of lightly boron-doped a-Si : H films

Transient photoconductivity and its light-induced change were investigated by using a Model 4400 boxcar averager and signal processor for lightly boron-doped a-Si : H films. The transient photoconductivities of the sample were measured at an annealed state and light-soaked states. The transient decay process of the photoconductivity can be fitted fairly well by a second-order exponential decay function, which indicates that the decay process is related with two different traps. It is noteworthy that the photoconductivity of the film increases after light-soaking. This may be due to the deactivity of the boron acceptor B-4(-), and thus some of the boron atoms can no longer act as acceptors and drives E-F to shifts upward. Consequently, the number of effective recombination centers may be reduced and so the photoconductivity increases.