Heteroepitaxial growth of novel SOI material Si/gamma-Al2O3/Si

In this paper, we report the fabrication of Si-based double hetero-epitaxial SOI materials Si/gamma-Al2O3/Si. First, single crystalline gamma-Al2O3 (100) insulator films were grown epitaxially on Si(100) by LPCVD, and then, Si(100) epitaxial films were grown on gamma-Al2O3 (100)/Si(100) epi-substrates using a CVD method similar to silicon on sapphire (SOS) epitaxial growth. The Si/gamma-Al2O3 (100)/Si(100) SOI materials are characterized in detail by RHEED, XRD and AES techniques. The results demonstrate that the device-quality novel SOI materials Si/gamma-Al2O3 (100)/Si(100) has been fabricated successfully and can be used for application of MOS device.

Heteroepitaxial growth and annealing of gamma-Al2O3 thin films on silicon

The gamma-Al2O3 films were grown on Si (100) substrates using the sources of TMA (Al (CH3)(3)) and O-2 by very low-pressure chemical vapor deposition (VLP-CVD). It has been found that the gamma-Al2O3 film has a mirror-like surface and the RMS was about 2.5nm. And the orientation relationship was gamma-Al2O3(100)/Si(100). The thickness uniformity of gamma-Al2O3 films for 2-inch epi-wafer was less than 5%. The X-ray diffraction (XRD) and reflection high-energy electron diffraction (RHEED) results show that the crystalline quality of the film was improved after the film was annealed at 1000degreesC in O-2 atmosphere. The high-frequency C-V and leakage current of Al/gamma-Al2O3/Si capacitor were also measured to verify the annealing effect of the film. The results show that the dielectric constant increased from 4 to 7 and the breakdown voltage for 65-nm-thick gamma-Al2O3 film on silicon increases from 17V to 53V.

Gamma decay of the lowly excited states of 189Re

189W activities were produced via the 192Os(n, α) reaction using irradiation of isotopically enriched 192Os metallic powder of ～100 mg/cm2 with 14 MeV neutrons. The X-γ and γ-γ coincidence measurements were made so as to obtain γ rays from 189W decay and its coincidence relations. A new simple decay scheme of 189W including three γ rays of 210.2, 229.6 and 260.2 keV is proposed. Two new levels of 189Re at 470.4 and 489.8 keV are assigned.

Multi-quasiparticle gamma-band structure in neutron-deficient Ce and Nd isotopes

The newly developed multi-quasiparticle triaxial projected shell model approach is employed to study the high-spin band structures in neutron-deficient even-even Ce- and Nd-isotopes. It is observed that gamma-bands are built on each intrinsic configuration of the triaxial mean-field deformation. Due to the fact that a triaxial configuration is a superposition of several K-states, the projection from these states results in several low-lying bands originating from the same intrinsic configuration. This generalizes the well-known concept of the surface gamma-oscillation in deformed nuclei based on the ground-state to gamma-bands built on multi-quasiparticle configurations. This new feature provides an alternative explanation on the observation of two I = 10 aligning states in Ce-134 and both exhibiting a neutron character. (C) 2009 Elsevier B.V. All rights reserved.

Combined study of gamma p ->eta p and pi(-)p ->eta n in a chiral constituent quark approach

Within a chiral constituent quark model approach, η-meson production on the proton via electromagnetic and hadron probes is studied. With few parameters, the differential cross section and polarized beam asymmetry for γp → ηp and differential cross section for π − p → ηn processes are calculated and successfully compared with the data in the center-of-mass energy range from threshold up to 2 GeV. The five known resonances S11(1535), S11(1650), P13(1720),D13(1520), and F15(1680) are found to be dominant in the reaction mechanisms in both channels. Possible roles played by new resonances are also investigated; and in the photoproduction channel, significant contribution from S11 and D15 resonances, with masses around 1715 and 2090 MeV, respectively, are deduced. For the so-called missing resonances, no evidence is found within the investigated reactions. The helicity amplitudes and decay widths of N ∗ → πN, ηN are also presented and found to be consistent with the Particle Data Group values.