Modeling of temperature and field-dependent electron mobility in a single-layer graphene sheet

In this paper, we address a physics-based analytical model of electric-field-dependent electron mobility (mu) in a single-layer graphene sheet using the formulation of Landauer and Mc Kelvey's carrier flux approach under finite temperature and quasi-ballistic regime. The energy-dependent, near-elastic scattering rate of in-plane and out-of-plane (flexural) phonons with the electrons are considered to estimate mu over a wide range of temperature. We also demonstrate the variation of mu with carrier concentration as well as the longitudinal electric field. We find that at high electric field (>10(6) Vm(-1)), the mobility falls sharply, exhibiting the scattering between the electrons and flexural phonons. We also note here that under quasi-ballistic transport, the mobility tends to a constant value at low temperature, rather than in between T-2 and T-1 in strongly diffusive regime. Our analytical results agree well with the available experimental data, while the methodologies are put forward to estimate the other carrier-transmission-dependent transport properties.

Variable field ion traps

This paper presents a technique to vary the electric field within a cylindrical ion trap (CIT) mass spectrometer while it is in operation. In this technique, the electrodes of the CIT are split into number of mini-electrodes and different voltages are applied to these split-electrodes to achieve the desired field. In our study we have investigated two geometries of the split-electrode CIT. In the first, we retain the flat endcap electrodes of the CIT but split the ring electrode into five mini-rings. In the second configuration, we split the ring electrode of the CIT into three mini-rings and also divide the endcaps into two mini-discs. By applying different potentials to the mini-rings and mini-discs of these geometries we have shown that the field within the trap can be optimized to desired values. In our study, two different types of fields were targeted. In the first, potentials were adjusted to obtain a linear electric field and, in the second, a controlled higher order even multipole field was obtained by adjusting the potential. We have shown that the different potentials required can be derived from a single RF generator by connecting appropriate capacitor terminations to split electrodes. The field within the trap can be modified by changing the values of the external capacitors. (C) 2013 Elsevier B.V. All rights reserved.

MRT Letter: Experimental Verification of Vectorial Theory to Determine Field at the Geometrical Focus of a Cylindrical Lens

We provide experimental evidence supporting the vectorial theory for determining electric field at and near the geometrical focus of a cylindrical lens. This theory provides precise distribution of field and its polarization effects. Experimental results show a close match (approximate to 95% using (2)-test) with the simulation results (obtained using vectorial theory). Light-sheet generated both at low and high NA cylindrical lens shows the importance of vectorial theory for further development of light-sheet techniques. Potential applications are in planar imaging systems (such as, SPIM, IML-SPIM, imaging cytometry) and spectroscopy. Microsc. Res. Tech. 77:105-109, 2014. (c) 2014 Wiley Periodicals, Inc.

Film thickness mediated transition in the kinetics of electric current induced flow of thin liquid metal films

Application of high electric-field between two points in a thin metallic film results in liquefaction and subsequent flow of the liquid-film from one electrode to another in a radially symmetric fashion. Here, we report the transition of the flow kinetics driven by the liquid film thickness varying from 3 to 100 nm. The mechanism of the flow behavior is observed to be independent of the film thickness; however, the kinetics of the flow depends on the film thickness and the applied voltage. An analytical model, incorporating viscosity and varying electrical resistivity with film thickness, is developed to explain the experimental observations. (C) 2014 AIP Publishing LLC.

Field dependent and disorder-induced nonlinear charge transport in electrochemically doped polypyrrole devices

Electric field activated charge transport is studied in the metal/polymer/metal device structure of electropolymerized polypyrrole down to 10 K with varying carrier density and disorder. Disorder induced nonlinear behaviour is observed in polypyrrole devices grown at room temperature which is correlated to delocalization of states. The slope parameter of currentvoltage characteristics (in log-log scale) increases as the temperature decreases, which indicates the onset of stronger field dependence. The field dependence of mobility becomes dominant as the carrier density decreases. The sharp dip in differential conductance indicates the localization of carriers at low temperatures which reduces the effective number of carriers involved in the transport.

Extremely High Near Field Enhancement in a Novel Plasmonic Nano Material used for Photovoltage Generation

Enhancement of localized electric field near metal (plasmonic) nanostructures can have various interesting applications in sensing, imaging, photovoltage generation etc., for which significant efforts are aimed towards developing plasmonic systems with well designed and large electromagnetic response. In this paper, we discuss the wafer scale fabrication and optical characterization of a unique three dimensional plasmonic material. The near field enhancement in the visible range of the electromagnetic spectrum obtained in these structures (order of 106), is close to the fundamental limit that can be obtained in this and similar EM field enhancement schemes. The large near field enhancement has been reflected in a huge Raman signal of graphene layer in close proximity to the plasmonic system, which has been validated with FEM simulations. We have integrated graphene photodetectors with this material to obtain record photovoltage generation, with responsivity as high as A/W. As far as we know, this is the highest sensitivity obtained in any plasmonic-graphene hybrid photodetection system till date.

Efficient charge transfer and field-induced tunneling transport in hybrid composite device of organic semiconductor and cadmium telluride quantum dots

Temperature and photo-dependent current-voltage characteristics are investigated in thin film devices of a hybrid-composite comprising of organic semiconductor poly(3,4-ethylenedioxythiophene): polystyrenesulfonate (PEDOT: PSS) and cadmium telluride quantum dots (CdTe QDs). A detailed study of the charge injection mechanism in ITO/PEDOT: PSS-CdTe QDs/Al device exhibits a transition from direct tunneling to Fowler-Nordheim tunneling with increasing electric field due to formation of high barrier at the QD interface. In addition, the hybrid-composite exhibits a huge photoluminescence quenching compared to aboriginal CdTe QDs and high increment in photoconductivity (similar to 400%), which is attributed to the charge transfer phenomena. The effective barrier height (Phi(B) approximate to 0.68 eV) is estimated from the transition voltage and the possible origin of its variation with temperature and photo-illumination is discussed. (C) 2015 AIP Publishing LLC.

Field induced domain switching as the origin of anomalous lattice strain along non-polar direction in rhombohedral BiScO3-PbTiO3 close to the morphotropic phase boundary

The lattice strain and domain switching behavior of xBiScO(3)-(1-x) PbTiO3 (x = 0.40) was investigated as a function of cyclic field and grain orientation by in situ X-ray diffraction during application of electric fields. The electric field induced 200 lattice strain was measured to be five times larger than the 111 lattice strain in pseudorhombohedral xBiScO(3)-(1-x) PbTiO3 (x = 0.40). It is shown that the anomalous 200 lattice strain is not an intrinsic phenomenon, but arises primarily due to stress associated with the reorientation of the 111 domains in dense polycrystalline ceramic. (C) 2015 AIP Publishing LLC.

Synthesis, characterization and field emission properties of tin oxide nanowires

Tin oxide (SnO2) nanowires are synthesized by Au catalyzed chemical vapor deposition of Sn and C mixture at 900 degrees C by employing a continuous flow of Ar: O-2 (10:1) for an hour. X-ray diffraction and Raman spectroscopy studies indicate that the as-grown SnO2 nanowires are crystalline in nature with tetragonal rutile phase. Electron microscopy studies reveal towards high aspect ratio of nanowires. The field emission studies show that SnO2 nanowires grown on Si substrate exhibit low turn-on field of 1.75 V/mu m (at 0.1 mu A/cm(2)) and long-term emission stability over a period of more than 50 h with a current density of 4 mu A/cm(2) at a constant electric field of 2.25 V/mu m. Hardly any considerable degradation in the emission current is noticed even after 50 h which may be attributed to the high crystallinity of SnO2 nanowires. (C) 2015 Elsevier B.V. All rights reserved.

Analysis of strip electric saturation model of crack problem in piezoelectric materials

This paper presents a fully anisotropic analysis of strip electric saturation model proposed by Gao et al. (1997) (Gao, H.J., Zhang, T.Y., Tong, P., 1997. Local and global energy release rates for an electrically yielded crack in a piezoelectric ceramic. J. Mech. Phys. Solids, 45, 491-510) for piezoelectric materials. The relationship between the size of the strip saturation zone ahead of a crack tip and the applied electric displacement field is established. It is revealed that the critical fracture stresses for a crack perpendicular to the poling axis is linearly decreased with the increase of the positive applied electric field and increases linearly with the increase of the negative applied electric field. For a crack parallel to the poring axis, the failure stress is not effected by the parallel applied electric field. In order to analyse the existed experimental results, the stress fields ahead of the tip of an elliptic notch in an infinite piezoelectric solid are calculated. The critical maximum stress criterion is adopted for determining the fracture stresses under different remote electric displacement fields. The present analysis indicates that the crack initiation and propagation from the tip of a sharp elliptic notch could be aided or impeded by an electric displacement field depending on the field direction. The fracture stress predicted by the present analysis is consistent with the experimental data given by Park and Sun (1995) (Park, S., Sun, C.T., 1995. Fracture criteria for piezoelectric materials. J. Am. Ceram. Soc 78, 1475-1480).

Plasma enhanced chemical vapour deposited carbon nanotubes for field emission applications

Plasma Enhanced Chemical Vapour Deposition is an extremely versatile technique for directly growing multiwalled carbon nanotubes onto various substrates. We will demonstrate the deposition of vertically aligned nanotube arrays, sparsely or densely populated nanotube forests, and precisely patterned arrays of nanotubes. The high-aspect ratio nanotubes (∼50 nm in diameter and 5 microns long) produced are metallic in nature and direct contact electrical measurements reveal that each nanotube has a current carrying capacity of 107-108 A/cm2, making them excellent candidates as field emission sources. We examined the field emission characteristics of dense nanotube forests as well as sparse nanotube forests and found that the sparse forests had significantly lower turn-on fields and higher emission currents. This is due to a reduction in the field enhancement of the nanotubes due to electric field shielding from adjacent nanotubes in the dense nanotube arrays. We thus fabricated a uniform array of single nanotubes to attempt to overcome these issues and will present the field emission characteristics of this.

Energy Principle And Nonlinear Electric-Mechanical Behavior Of Ferroelectric Ceramics

Many experimental observations have shown that a single domain in a ferroelectric material switches by progressive movement of domain walls, driven by a combination of electric field and stress. The mechanism of the domain switch involves the following steps: initially, the domain has a uniform spontaneous polarization; new domains with the reverse polarization direction nucleate, mainly at the surface, and grow though the crystal thickness; the new domain expands sideways as a new domain continues to form; finally, the domain switch coalesces to complete the polarization reversal. According to this mechanism, the volume fraction of the domain switching is introduced in the constitutive law of the ferroelectric material and used to study the nonlinear constitutive behavior of a ferroelectric body in this paper. The principle of stationary total potential energy is put forward in which the basic unknown quantities are the displacement u(i), electric displacement D-i and volume fraction rho(I) of the domain switching for the variant I. The mechanical field equation and a new domain switching criterion are obtained from the principle of stationary total potential energy. The domain switching criterion proposed in this paper is an expansion and development of the energy criterion established by Hwang et al. [ 1]. Based on the domain switching criterion, a set of linear algebraic equations for determining the volume fraction rho(I) of domain switching is obtained, in which the coefficients of the linear algebraic equations only contain the unknown strain and electric fields. If the volume fraction rho(I) of domain switching for each domain is prescribed, the unknown displacement and electric potential can be obtained based on the conventional finite element procedure. It is assumed that a domain switches if the reduction in potential energy exceeds a critical energy barrier. According to the experimental results, the energy barrier will strengthen when the volume fraction of the domain switching increases. The external mechanical and electric loads are increased step by step. The volume fraction rho(I) of domain switching for each element obtained from the last loading step is used as input to the constitutive equations. Then the strain and electric fields are calculated based on the conventional finite element procedure. The finite element analysis is carried out on the specimens subjected to uniaxial coupling stress and electric field. Numerical results and available experimental data are compared and discussed. The present theoretic prediction agrees reasonably with the experimental results.

A field model interpretation of crack initiation and growth behavior in ferroelectric ceramics: change of poling direction and boundary condition

Strain energy density expressions are obtained from a field model that can qualitatively exhibit how the electrical and mechanical disturbances would affect the crack growth behavior in ferroelectric ceramics. Simplification is achieved by considering only three material constants to account for elastic, piezoelectric and dielectric effects. Cross interaction of electric field (or displacement) with mechanical stress (or strain) is identified with the piezoelectric effect; it occurs only when the pole is aligned normal to the crack. Switching of the pole axis by 90degrees and 180degrees is examined for possible connection with domain switching. Opposing crack growth behavior can be obtained when the specification of mechanical stress sigma(infinity) and electric field E-infinity or (sigma(infinity), E-infinity) is replaced by strain e and electric displacement D-infinity or (epsilon(infinity), D-infinity). Mixed conditions (sigma(infinity),D-infinity) and (epsilon(infinity),E-infinity) are also considered. In general, crack growth is found to be larger when compared to that without the application of electric disturbances. This includes both the electric field and displacement. For the eight possible boundary conditions, crack growth retardation is identified only with (E-y(infinity),sigma(y)(infinity)) for negative E-y(infinity) and (D-y(infinity), epsilon(y)(infinity)) for positive D-y(infinity) while the mechanical conditions sigma(y)(infinity) or epsilon(y)infinity are not changed. Suitable combinations of the elastic, piezoelectric and dielectric material constants could also be made to suppress crack growth. (C) 2002 Published by Elsevier Science Ltd.

Damage analysis of tetragonal perovskite structure ceramics implicated by asymptotic field solutions and boundary conditions

Cracking of ceramics with tetragonal perovskite grain structure is known to appear at different sites and scale level. The multiscale character of damage depends on the combined effects of electromechanical coupling, prevailing physical parameters and boundary conditions. These detail features are exhibited by application of the energy density criterion with judicious use of the mode I asymptotic and full field solution in the range of r/a = 10(-4) to 10(-2) where r and a are, respectively, the distance to the crack tip and half crack length. Very close to the stationary crack tip, bifurcation is predicted resembling the dislocation emission behavior invoked in the molecular dynamics model. At the macroscopic scale, crack growth is predicted to occur straight ahead with two yield zones to the sides. A multiscale feature of crack tip damage is provided for the first time. Numerical values of the relative distances and bifurcation angles are reported for the PZT-4 ceramic subjected to different electric field to applied stress ratio and boundary conditions that consist of the specification of electric field/mechanical stress, electric displacement/mechanical strain, and mixed conditions. To be emphasized is that the multiscale character of damage in piezoceramics does not appear in general. It occurs only for specific combinations of the external and internal field parameters, elastic/piezoelectric/dielectric constants and specified boundary conditions. (C) 2002 Published by Elsevier Science Ltd.

Attosecond pulse extreme-ultraviolet photoionization in a two-color laser field

Attosecond-pulse extreme-ultraviolet (XUV) photoionization in a two-color laser field is investigated. Attosecond pulse trains with different numbers of pulses are examined, and their strong dependence on photoelectronic spectra is found. Single-color driving-laser-field-assisted attosecond XUV photoionization cannot determine the number of attosecond pulses from the photoelectronic energy spectrum that are detected orthogonally to the beam direction and the electric field vector of the linearly polarized laser field. A two-color-field-assisted XUV photoionization scheme is proposed for directly determining the number of attosecond pulses from a spectrum detected orthogonally. (C) 2005 Optical Society of America.