979 resultados para EER SPECTRA


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Residential RC framed structures suffered heavily during the 2001 Bhuj earthquake in Gujarat, India. These types of structures also saw severe damage in other earthquakes such as the 1999 Kocaeli earthquake in Turkey and 921 Ji-Ji earthquake in Taiwan. In this paper the seismic response of residential structures was investigated using physical modelling. Idealised soft storey and top heavy, two degrees of freedom (2DOF) portal frame structures were developed and tested on saturated and dry sand models at 25 g using the Schofield Centre 10-m Beam Centrifuge. It was possible to recreate observed field behaviour using these models. As observed in many of the recent earthquakes, soft storey structures were found to be particularly vulnerable to seismic loads. Elastic response spectra methods are often used in the design of simple portal frame structures. The seismic risk of these structures can be significantly increased due to modifications such as removal of a column or addition of heavy water tanks on the roof. The experimental data from the dynamic centrifuge tests on such soft storey or top-heavy models was used to evaluate the predictions obtained from the response spectra. Response spectra were able to predict seismic response during small to moderate intensity earthquakes, but became inaccurate during strong earthquakes and when soil structure interaction effects became important. Re-evaluation of seismic risk of such modified structures is required and time domain analyses suggested by building codes such as IBC, UBC or NEHRP may be more appropriate. © Springer 2006.

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Holistic representations of natural scenes is an effective and powerful source of information for semantic classification and analysis of arbitrary images. Recently, the frequency domain has been successfully exploited to holistically encode the content of natural scenes in order to obtain a robust representation for scene classification. In this paper, we present a new approach to naturalness classification of scenes using frequency domain. The proposed method is based on the ordering of the Discrete Fourier Power Spectra. Features extracted from this ordering are shown sufficient to build a robust holistic representation for Natural vs. Artificial scene classification. Experiments show that the proposed frequency domain method matches the accuracy of other state-of-the-art solutions. © 2008 Springer Berlin Heidelberg.

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High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by using a combination of self-assembled QDs with a high density, large inhomogeneous broadening, a tapered angled pump region, and etched V groove structure. This broad-area device exhibits greater than 70-nm 3-dB bandwidth and drive current insensitive emission spectra with 100-mW output power under continuous-wave operation. For pulsed operation, greater than 200-mW output power is obtained.

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We report on the fabrication of the nanowires with InGaAs/GaAs heterostructures on the GaAs(111) B substrate using selective-area metal organic vapor phase epitaxy. Fabry-Perot microcavity modes were observed in the nanowires with perfect end facets dispersed onto the silicon substrate and not observed in the free-standing nanowires. We find that the calculated group refractive indices only considering the material dispersion do not agree with the experimentally determined values although this method was used by some researchers. The calculated group refractive indices considering both the material dispersion and the waveguide dispersion agree with the experimentally determined values well. We also find that Fabry-Perot microcavity modes are not observable in the nanowires with the width less than about 180 nm, which is mainly caused by their poor reflectivity at the end facets due to their weak confinement to the optical field. (C) 2009 Optical Society of America

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Resonant tunnelling diodes with different structures were grown. Their photoluminescence spectra were investigated. By contrast, the luminescence in the quantum well is separated from that of other epilayers. The result is obtained that the exciton of the luminescence in the quantum well is partly come from the cap layer in the experiment. So the photoluminescence spectrum is closely related to the electron transport in the resonant tunnelling diode structure. This offers a method by which the important performance of resonant tunnelling diode could be forecast by analysing the integrated photoluminescence intensities.

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A gain measurement technique, based on Fourier series expansion of periodically extended single fringe of the amplified spontaneous emission spectrum, is proposed for Fabry-Perot semiconductor lasers. The underestimation of gain due to the limited resolution of the measurement system is corrected by a factor related to the system response function. The standard deviations of the gain-reflectivity product under low noise conditions are analyzed for the Fourier series expansion method and compared with those of the Hakki-Paoli method and Cassidy's method. The results show that the Fourier series expansion method is the least sensitive to noise among the three methods. The experiment results obtained by the three methods are also presented and compared.

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The composite films of the nanocrystalline GaAs1-xSbx-SiO2 have been successfully deposited on glass and GaSb substrates by radio frequency magnetron co-sputtering. The 10K photoluminescence (PL) properties of the nanocrystalline GaAs1-xSbx indicated that the PL peaks of the GaAs1-xSbx nanocrystals follow the quantum confinement model very closely. Optical transmittance spectra showed that there is a large blue shift of optical absorption edge in nanocrystalline GaAs1-xSbx-SiO2 composite films, as compared with that of the corresponding bulk semiconductor, which is due to the quantum confinement effect.

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Contactless electroreflectance (CER) and photoreflectance (PR) measurements have been performed on samples with the structure of an n-doped GaAs epitaxial layer on a semi- insulating GaAs substrate. Modulated reflectance signals from the n-GaAs surface and those from the n-GaAs/SI-GaAs interface are superposed in PR spectra. For the case of CER measurement, however, Franz-Keldysh oscillations (FKOs) from the interface, which are observed in PR spectra, cannot be detected. This discrepancy is attributed to different modulation mechanisms of CER and PR. In CER experiments, the electric field modulation cannot be added to the interfacial electric field because of the effective screening by the fast response of carriers across the interface. FKOs from the interface without any perturbation by the surface signals are extracted by subtracting CER spectra from PR spectra.