Spontaneous formation of highly ordered nanostructures: thermal instability and mode selection in surface-capped polymer films.

We demonstrate a controllable formation process of wave-like patterns in thermally unstable surface-capped polymer films on a rigid substrate. Self-ordered wave-like structures over a large area can be created by applying a small lateral tension to the film, whereupon it becomes unstable. A clear mode selection process which includes creation, decay and interference between coexisting waves at different annealing conditions has been observed, which makes it possible to restrain the patterns which are formed finally. Our results provide a clear and new evidence of spinodal behaviour in such a film due to thermal instability. Furthermore, we show that the well-controlled patterns generated in such a process can be used to fabricate nanostructures for various applications.

Anchorage of air bladder with the interspinous bone of the anal fin in Lactarius lactarius (Bloch and Schneider, 1801)

Specimens of the false trevally (Lactarius lactarius ), 127 to 221 mm in total length, were studied for the mode of anchorage of the air-bladder with the interspinous bone of the anal fin. The 1st and 2nd interspinous bones are fused together into a single piece (named here as the anchor bone) which pierces through the air-bladder, dividing it into two intercommunicating chambers at its upper end, and ultimately articulates with the 10th vertebral bone. The lower end of the bone is broad, fan like with one side affording articulation with the 1st and 2nd anal spines. This is an unique feature of great taxonomical importance to L. lactarius, the only species in the family Lactariidae. The anal fin counts (23-27) and vertebral counts (23) are also given.

The use of C-V techniques to investigate instability mechanisms in M-I-S structures

In the field of flat panel displays, the current leading technology is the Active Matrix liquid Crystal Display; this uses a-Si:H based thin film transistors (TFTs) as the switching element in each pixel. However, under gate bias a-Si:H TFTs suffer from instability, as is evidenced by a shift in the gate threshold voltage. The shift in the gate threshold voltage is generally measured from the gate transfer characteristics, after subjecting the TFT to prolonged gate bias. However, a major drawback of this measurement method is that it cannot distinguish whether the shift is caused by the change in the midgap states in the a-Si:H channel or by charge trapping in the gate insulator. In view of this, we have developed a capacitance-voltage (C-V) method to measure the shift in threshold voltage. We employ Metal-Insulator-Semiconductor (MIS) structures to investigate the threshold voltage shift as they are simpler to fabricate than TFTs. We have investigated a large of number Metal/a-Si:H/Si3N4/Si+n structures using our C-V technique. From, the C-V data for the MIS structures, we have found that the relationship between the thermal energy and threshold voltage shift is similar to that reported by Wehrspohn et. al in a-Si:H TFTs (J Appl. Phys, 144, 87, 2000). The a-Si:H and Si3N4 layers were grown using the radio-frequency plasma-enhanced chemical vapour deposition technique.

CALCULATIONS OF INLET DISTORTION INDUCED COMPRESSOR FLOWFIELD INSTABILITY.

Calculations are presented predicting the onset of flow instability for a multistage low speed axial compressor operating in circumferentially distorted inlet flow. The most important feature of the model used is that it attempts to properly account for the fluid dynamic interaction between the spoiled and unspoiled sectors of the compressor. The calculations show that there is an approximate stability criterion, the annulus averaged slope of the compressor pressure rise characteristic equal to zero, that is valid whenever the dynamics of the compressor distorted flowfield can be considered independent of the compressor environment. This approximate criterion is used to investigate the relationship between the present model and the 'parallel compressor' model. Further calculations are performed to investigate cases of interest when the dynamics of the compressor flowfield are coupled to the environment. Resonant cases and cases when the distortion is unsteady are studied.