Temporal and statistical properties of the ytterbium doped fiber laser

Recently, temporal and statistical properties of quasi-CW fiber lasers have attracted a great attention. In particular, properties of Raman fiber laser (RFLs) have been studied both numerically and experimentally [1,2]. Experimental investigation is more challengeable, as the full generation optical bandwidth (typically hundreds of GHz for RFLs) is much bigger than real-time bandwidth of oscilloscopes (up to 60GHz for the newest models). So experimentally measured time dynamics is highly bandwidth averaged and do not provide precise information about overall statistical properties. To overpass this, one can use the spectral filtering technique to study temporal and statistical properties within optical bandwidth comparable with measurement bandwidth [3] or indirect measurements [4]. Ytterbium-doped fiber lasers (YDFL) are more suitable for experimental investigation, as their generation spectrum usually 10 times narrower. Moreover, recently ultra-narrow-band generation has been demonstrated in YDFL [5] which provides in principle possibility to measure time dynamics and statistics in real time using conventional oscilloscopes. © 2013 IEEE.

Chalcogenide suspended-core fibers for supercontinuum generation in the mid-infrared

Chalcogenide suspended core fibers are a valuable solution to obtain supercontinuum generation of light in the mid-infrared, thanks to glass high transparency, high index contrast, small core diameter and widely-tunable dispersion. In this work the dispersion and nonlinear properties of several chalcogenide suspended core mi-crostructured fibers are numerically evaluated, and the effects of all the structural parameters are investigated. Optimization of the design is carried out to provide a fiber suitable for wide-band supercontinuum generation in the mid-infrared.

BETA-GA2O3: A TRANSPARENT CONDUCTIVE OXIDE FOR POTENTIAL RESISTIVE SWITCHING APPLICATIONS

Thesis (Ph.D.)--University of Washington, 2016-08

Investigating routes toward atomic layer deposition of silicon carbide: Ab initio screening of potential silicon and carbon precursors

Silicon carbide (SiC) is a promising material for electronics due to its hardness, and ability to carry high currents and high operating temperature. SiC films are currently deposited using chemical vapor deposition (CVD) at high temperatures 1500–1600 °C. However, there is a need to deposit SiC-based films on the surface of high aspect ratio features at low temperatures. One of the most precise thin film deposition techniques on high-aspect-ratio surfaces that operates at low temperatures is atomic layer deposition (ALD). However, there are currently no known methods for ALD of SiC. Herein, the authors present a first-principles thermodynamic analysis so as to screen different precursor combinations for SiC thin films. The authors do this by calculating the Gibbs energy ΔGΔG of the reaction using density functional theory and including the effects of pressure and temperature. This theoretical model was validated for existing chemical reactions in CVD of SiC at 1000 °C. The precursors disilane (Si2H6), silane (SiH4), or monochlorosilane (SiH3Cl) with ethyne (C2H2), carbontetrachloride (CCl4), or trichloromethane (CHCl3) were predicted to be the most promising for ALD of SiC at 400 °C.

Development of Zirconia based phosphors for application in lighting and as luminescent bioprobes

The strong progress evidenced in photonic and optoelectronic areas, accompanied by an exponential development in the nanoscience and nanotechnology, gave rise to an increasing demand for efficient luminescent materials with more and more exigent characteristics. In this field, wide band gap hosts doped with lanthanide ions represent a class of luminescent materials with a strong technological importance. Within wide band gap material, zirconia owns a combination of physical and chemical properties that potentiate it as an excellent host for the aforementioned ions, envisaging its use in different areas, including in lighting and optical sensors applications, such as pressure sensors and biosensors. Following the demand for outstanding luminescent materials, there is also a request for fast, economic and an easy scale-up process for their production. Regarding these demands, laser floating zone, solution combustion synthesis and pulsed laser ablation in liquid techniques are explored in this thesis for the production of single crystals, nanopowders and nanoparticles of lanthanides doped zirconia based hosts. Simultaneously, a detailed study of the morphological, structural and optical properties of the produced materials is made. The luminescent characteristics of zirconia and yttria stabilized zirconia (YSZ) doped with different lanthanide ions (Ce3+ (4f1), Pr3+ (4f2), Sm3+ (4f5), Eu3+ (4f6), Tb3+ (4f8), Dy3+ (4f9), Er3+ (4f11), Tm3+ (4f12), Yb3+ (4f13)) and co-doped with Er3+,Yb3+ and Tm3+,Yb3+ are analysed. Besides the Stokes luminescence, the anti- Stokes emission upon infrared excitation (upconversion and black body radiation) is also analysed and discussed. The comparison of the luminescence characteristics in materials with different dimensions allowed to analyse the effect of size in the luminescent properties of the dopant lanthanide ions. The potentialities of application of the produced luminescent materials in solid state light, biosensors and pressure sensors are explored taking into account their studied characteristics.

Amplificador de RF Doherty assimétrico de 2-vias

Os atuais esquemas de modulação e acesso ao meio, tais como o Wide- Band Code-Division Multiple Access (WCDMA) ou Orthogonal Frequency- Division Multiple Access (OFDMA), que são otimizados para a gestão eficiente do espetro electromagnético e elevada taxa de transmissão, originam sinais de elevado Peak-to-Average Power Ratio (PAPR) e requisitos de linearidade rigorosos. As arquiteturas de amplificação tradicionais, i.e. baseadas no operação em modo de corrente do dispositivo ativo, são incapazes de satisfazer estes requisitos em simultâneo. Assim, o amplificador de potência (do inglês, Power Ampli_er (PA)) incorre numa degradação significativa de rendimento energético em favor de maior linearidade, aumentando simultaneamente os custos de operação das estacões base para os operadores de telecomunicações móveis e o impacte ambiental. Este trabalho foca-se no estudo da arquitetura Doherty, a principal solução encontrada para melhorar o compromisso linearidade/rendimento para aplicações em estações-base de comunicações móveis. Para tal, são expostos os princípios básicos de amplificadores de rádio frequência assim como a análise teórica do tradicional PA Doherty (do inglês, Doherty Power Amplifier (DhPA)) de duas vias e suas variantes. O estudo _e complementado com o projeto e implementação de um PA excitador, em classe-AB, e de um DhPA de elevada potência, colocando-se em prática a teoria e técnicas de projeto estudadas ao longo deste trabalho, aliadas aos desafios da implementação com dispositivos reais de elevada potência.

Sistema de rádio comunicações para UAV

Os veículos aéreos não tripulados, mais conhecidos por drones, têm tomado atualmente uma posição importante na sociedade. Para além da sua importância no meio militar, têm sido cada vez mais utilizados para meios comerciais uma vez que o seu custo é relativamente baixo e podem ser utilizados para inúmeras aplicações. Devido à sua importância em missões de salvamento, reconhecimento de terreno e até mesmo de ataque, é fundamental uma boa comunicação entre a aeronave e a estação terrestre. Sendo a antena um dos principais elementos do sistema de comunicação, esta dissertação centrou-se no desenvolvimento de uma agregado de antenas a operar à frequência de 2.45GHz. Pretende-se que este agregado apresente polarização circular direita bem como um ganho e largura de banda elevados. Com o objetivo de se obter uma comunicação mais eficiente entre a aeronave e a estação terrestre, o agregado permitirá o redirecionamento do feixe principal do diagrama de radiação. Para tal, serão analisadas três abordagens distintas recorrendo a linhas de atraso e switches, permitindo que seja efetuado beamforming.

High performance terahertz resonant tunnelling diode sources and broadband antenna for air-side radiation

Resonant tunnelling diode (RTD) is known to be the fastest electronics device that can be fabricated in compact form and operate at room temperature with potential oscillation frequency up to 2.5 THz. The RTD device consists of a narrow band gap quantum well layer sandwiched between two thin wide band gap barriers layers. It exhibits negative differential resistance (NDR) region in its current-voltage (I-V) characteristics which is utilised in making oscillators. Up to date, the main challenge is producing high output power at high frequencies in particular. Although oscillation frequencies of ~ 2 THz have been already reported, the output power is in the range of micro-Watts. This thesis describes the systematic work on the design, fabrication, and characterisation of RTD-based oscillators in microwave/millimetre-wave monolithic integrated circuits (MMIC) form that can produce high output power and high oscillation frequency at the same time. Different MMIC RTD oscillator topologies were designed, fabricated, and characterised in this project which include: single RTD oscillator which employs one RTD device, double RTDs oscillator which employs two RTD devices connected in parallel, and coupled RTD oscillators which combine the powers of two oscillators over a single load, based on mutual coupling and which can employ up to four RTD devices. All oscillators employed relatively large size RTD devices for high power operation. The main challenge was to realise high oscillation frequency (~ 300 GHz) in MMIC form with the employed large sized RTD devices. To achieve this aim, proper designs of passive structures that can provide small values of resonating inductances were essential. These resonating inductance structures included shorted coplanar wave guide (CPW) and shorted microstrip transmission lines of low characteristics impedances Zo. Shorted transmission line of lower Zo has lower inductance per unit length. Thus, the geometrical dimensions would be relatively large and facilitate fabrication by low cost photolithography. A series of oscillators with oscillation frequencies in the J-band (220 – 325 GHz) range and output powers from 0.2 – 1.1 mW have been achieved in this project, and all were fabricated using photolithography. Theoretical estimation showed that higher oscillation frequencies (> 1 THz) can be achieved with the proposed MMIC RTD oscillators design in this project using photolithography with expected high power operation. Besides MMIC RTD oscillators, reported planar antennas for RTD-based oscillators were critically reviewed and the main challenges in designing high performance integrated antennas on large dielectric constant substrates are discussed in this thesis. A novel antenna was designed, simulated, fabricated, and characterised in this project. It was a bow-tie antenna with a tuning stub that has very wide bandwidth across the J-band. The antenna was diced and mounted on a reflector ground plane to alleviate the effect of the large dielectric constant substrate (InP) and radiates upwards to the air-side direction. The antenna was also investigated for integration with the all types of oscillators realised in this project. One port and two port antennas were designed, simulated, fabricated, and characterised and showed the suitability of integration with the single/double oscillator layout and the coupled oscillator layout, respectively.

Ultra-wideband slot antenna with band-notch characteristics for wireless USB dongle applications

A compact ultra-wideband (UWB) printed slot antenna is described, suitable for integration with the printed circuit board (PCB) of a wireless, universal, serial-bus dongle. The design comprises of a near-rectangular slot fed by a coplanar waveguide (CPW) printed on a PCB of size 20 × 30 mm2. It has a large bandwidth covering the 3.1–10.6 GHz UWB band, with omnidirectional radiation patterns. Further, a notched band centered at 5.45 GHz wireless local area network bands is obtained within the wide bandwidth by inserting a narrow slot inside the tuning stub. Details of the antenna design are described, and the experimental results of the constructed prototype are presented. The time domain studies on the antenna shows a linear phase response throughout the band except at the notched frequency. The transient analysis of the antenna indicates very little pulse distortion confirming its suitability for high speed wireless connectivity.

Design of compact low pass filter with wide stop band using tri-section stepped impedance resonator

This paper reports the design of a compact low pass filter (LPF) with wide stop band region using trisection stepped impedance resonators in microstrip medium. Experimental results of a low pass filter designed at 1 GHz have been compared against the analytical and EM simulation results for the validation of the design. Results are satisfactorily matching each other. The maximum insertion of the measured filter is 0.2 dB and minimum return loss is 13.5 dB over the pass band. The stop band rejection is better than 20 dB from 1.5 GHz to 4.2 GHz and hence wide stop band performance is achieved. Overall size of the filter is 30 mm x 20 mm x 0.78 mm which is 0.1 lambda x 0.066 lambda. x 0.0026 lambda at 1 GHz. (C) 2011 Elsevier GmbH. All rights reserved.

Threshold voltage modeling under size quantization for ultra-thin silicon double-gate metal-oxide-semiconductor field-effect transistor

We report on the threshold voltage modeling of ultra-thin (1 nm-5 nm) silicon body double-gate (DG) MOSFETs using self-consistent Poisson-Schrodinger solver (SCHRED). We define the threshold voltage (V th) of symmetric DG MOSFETs as the gate voltage at which the center potential (Φ c) saturates to Φ c (s a t), and analyze the effects of oxide thickness (t ox) and substrate doping (N A) variations on V th. The validity of this definition is demonstrated by comparing the results with the charge transition (from weak to strong inversion) based model using SCHRED simulations. In addition, it is also shown that the proposed V t h definition, electrically corresponds to a condition where the inversion layer capacitance (C i n v) is equal to the oxide capacitance (C o x) across a wide-range of substrate doping densities. A capacitance based analytical model based on the criteria C i n v C o x is proposed to compute Φ c (s a t), while accounting for band-gap widening. This is validated through comparisons with the Poisson-Schrodinger solution. Further, we show that at the threshold voltage condition, the electron distribution (n(x)) along the depth (x) of the silicon film makes a transition from a strong single peak at the center of the silicon film to the onset of a symmetric double-peak away from the center of the silicon film. © 2012 American Institute of Physics.

Ultra-sensitive pressure dependence of bandgap of rutile-GeO2 revealed by many body perturbation theory

The reported values of bandgap of rutile GeO2 calculated by the standard density functional theory within local-density approximation (LDA)/generalized gradient approximation (GGA) show a wide variation (similar to 2 eV), whose origin remains unresolved. Here, we investigate the reasons for this variation by studying the electronic structure of rutile-GeO2 using many-body perturbation theory within the GW framework. The bandgap as well as valence bandwidth at Gamma-point of rutile phase shows a strong dependence on volume change, which is independent of bandgap underestimation problem of LDA/GGA. This strong dependence originates from a change in hybridization among O-p and Ge-(s and p) orbitals. Furthermore, the parabolic nature of first conduction band along X-Gamma-M direction changes towards a linear dispersion with volume expansion. (C) 2015 AIP Publishing LLC.