Photograph - Arthur A. Schmon, Eleanore Celeste Schmon and crowd

A photograph of Arthur A. Schmon with Eleanore Celeste Schmon with a crowd gathered around. The reverse of the picture is stamped "Editorial Associates Ltd. Montreal - Toronto"

Prospect Point Crowd, Niagara, U.S.A.

The description of the image reads "(2) Admiring Tourists viewing the Falls, from Prospect Point, Niagara, U.S.A."

Nanocrystalline Ge Flash Memories: Electrical Characterization and Trap Engineering

Conventional floating gate non-volatile memories (NVMs) present critical issues for device scalability beyond the sub-90 nm node, such as gate length and tunnel oxide thickness reduction. Nanocrystalline germanium (nc-Ge) quantum dot flash memories are fully CMOS compatible technology based on discrete isolated charge storage nodules which have the potential of pushing further the scalability of conventional NVMs. Quantum dot memories offer lower operating voltages as compared to conventional floating-gate (FG) Flash memories due to thinner tunnel dielectrics which allow higher tunneling probabilities. The isolated charge nodules suppress charge loss through lateral paths, thereby achieving a superior charge retention time. Despite the considerable amount of efforts devoted to the study of nanocrystal Flash memories, the charge storage mechanism remains obscure. Interfacial defects of the nanocrystals seem to play a role in charge storage in recent studies, although storage in the nanocrystal conduction band by quantum confinement has been reported earlier. In this work, a single transistor memory structure with threshold voltage shift, Vth, exceeding ~1.5 V corresponding to interface charge trapping in nc-Ge, operating at 0.96 MV/cm, is presented. The trapping effect is eliminated when nc-Ge is synthesized in forming gas thus excluding the possibility of quantum confinement and Coulomb blockade effects. Through discharging kinetics, the model of deep level trap charge storage is confirmed. The trap energy level is dependent on the matrix which confines the nc-Ge.

Flash Photography Enhancement via Intrinsic Relighting

We enhance photographs shot in dark environments by combining a picture taken with the available light and one taken with the flash. We preserve the ambiance of the original lighting and insert the sharpness from the flash image. We use the bilateral filter to decompose the images into detail and large scale. We reconstruct the image using the large scale of the available lighting and the detail of the flash. We detect and correct flash shadows. This combines the advantages of available illumination and flash photography.

Diseño Flash de recursos web y multimedia para la enseñanza : materiales para la formación a distancia del profesorado.

Resumen basado en la publicación

Info 2009- Group 3 -Interactive Flash Learning Tool

A flash learning resource that educates users about Web Accessibility.

Iniciació al Flash. 'Iniciación al Flash'.

Resumen tomado de la publicación. Se incluyen imágenes de capturas de pantalla del ordenador sobre el uso de la herramienta Macromedia Flash. Documento sujeto a una licencia de Reconocimiento-No comercial-Compartir con la misma licencia 3.0 España de Creative Commons

Flaix ciències, I. 'Flash ciencias, I'.

Resumen basado en el del autor en catalán

Flaix ciències, II. 'Flash ciencias, II'.

Resumen basado en el del autor en catalán

Flaix ciències, III. 'Flash ciencias, III'.

Resumen basado en el del autor en catalán

Flaix ciències, IV. 'Flash ciencias, IV'.

Resumen del autor en catalán

Flaix ciències, V. 'Flash ciencias, V'.

Resumen basado en del autor en catalán

Flaix ciències, VI. 'Flash ciencias, VI'.

Resumen basado en el del autor en catalán