Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method

Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and pH. No catalyst is required. The XRD studies show that the ZnO nanorods are single crystals and that they grow along the c axis of the crystal plane. The room temperature photoluminescence measurements have shown ultraviolet peaks at 388nm with high intensity, which are comparable to those found in high quality ZnO films. The mechanism of the nanorod growth in the aqueous solution is proposed. The dependence of the ZnO nanorods on the growth parameters was also investigated. While changing the growth temperature from 60°C to 150°C, the morphology of the ZnO nanorods changed from sharp tip (needle shape) to flat tip (rod shape). These kinds of structure are useful in laser and field emission application.

Growth of ZnO Nanorods on GaN Using Aqueous Solution Method

Uniformly distributed ZnO nanorods with diameter 80-120 nm and 1-2µm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the growth parameters are controlled by reactant concentration, temperature and pH. No catalyst is required. The XRD studies show that the ZnO nanorods are single crystals and that they grow along the c axis of the crystal plane. The room temperature photoluminescence measurements have shown ultraviolet peaks at 388nm with high intensity, which are comparable to those found in high quality ZnO films. The mechanism of the nanorod growth in the aqueous solution is proposed. The dependence of the ZnO nanorods on the growth parameters was also investigated. While changing the growth temperature from 60°C to 150°C, the morphology of the ZnO nanorods changed from sharp tip with high aspect ratio to flat tip with smaller aspect ratio. These kinds of structure are useful in laser and field emission application.

On the reversed crystal growth of BaZrO3 decaoctahedron: shape evolution and mechanism

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

NUCLEAR ALIGNMENT - CLASSICAL DYNAMIC-MODEL FOR THE U-238 U-238 SYSTEM

Dynamical properties of the U-238-U-238 system at the classical turning point, specifically the distance of closest approach, the relative orientations of the nuclei, and deformations have been studied at the sub-Coulomb energy of E(lab) = 6.07 MeV/nucleon using a classical dynamical model with a variable moment of inertia. Probability of favorable alignment for anomalous positron-electron pair emission through vacuum decay is calculated. The calculated small favorable alignment probability value of 0.116 is found to be enhanced by about 16% in comparison with the results of a similar study using a fixed moment of inertia as well as the results from a semiquantal calculation reported earlier.

Morphology and topography analysis of mesoporous titania templated by micrometric latex sphere arrays

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Fluorinated polymer films from r.f. plasmas containing benzene and sulfur hexafluorine

Mixtures of C6H6 and SF6 were polymerized in an r.f. discharge. Actinometry (quantitative optical emission spectroscopy) was used to determine trends in the plasma concentrations of the species F, H and CH as a function of the proportion of SF6 in the feed. Infrared spectroscopy and electron spectroscopy for chemical analysis were employed to characterize the deposited material. Increasing proportions of SF6 in the feed produced increased fragmentation of the benzene molecules and greater fluorination of the deposited material. The deposition rate, as determined by optical interferometry, was found to be enhanced about 4 times by the presence of 10-20% SF6 in the feed. At 50% SF6 in the feed, deposition rates were greater than in pure C6H6 plasmas despite the (probably large) etching effect of atomic fluorine from the discharge. Relationships between the plasma composition, electron density and temperature, film composition and growth rate are discussed. © 1992.

SnO 2 ceramics with low electrical resistivity obtained by microwave sintering

The main aim of this study was to develop dense and conducting SnO 2 ceramics without precipitated phases on the grain boundaries, which was verified using field emission scanning microscopy (FE-SEM) coupled with an energy-dispersive X-ray spectroscopy (FE-SEM/EDS). Two sample groups were investigated, where the first sample group was doped with zinc while the second one was doped with cobalt. The ceramics were prepared using the oxides mixture method and the sintering was carried out in a conventional muffle oven as well as in microwave oven. The results obtained were found to be similar regarding the relative density for the two sintering methods while time and temperature gains were observed for the microwave sintering method. The relative densities obtained were nearly 95%, for the two sintering methods. Concerning the electrical characterization measurements-electric field x current density as well as the environment temperature, the ceramics obtained through the conventional sintering method presented non-ohmic behavior. For the microwave sintered ceramics, we observed an ohmic behavior with electrical resistivity of 1.3 Ωcm for the samples doped with ZnO/Nb 2O 5 and 2.5 Ωcm for that of the samples doped with CoO/Nb 2O 5. The FE-SEM/EDS results for the microwave sintered ceramics indicated a structure with a reduced number of pores and other phases segregated at the grain boundaries, which leads to a better conductive ceramic than the conventional oven sintered samples. The dilatometry analysis determined the muffle sintering temperature and the difference between the densification of cobalt and zinc oxides. The addition of niobium oxide resulted in the decrease in resistivity, which thus led us to conclude that it is possible to obtain dense ceramics with low electrical resistivity based on SnO 2 using commercial oxides by the oxides mixture technique and the microwave oven sintering method. Copyright © 2011 American Scientific Publishers All rights reserved.

Preparação e caracterização de óxido de zinco nanoestruturado

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Preparação de catalisadores de reforma de glicerol para células a combustível de eletrólito sólido

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Síntese, processamento em hidrotermal convencional/microondas e propriedades fotoluminescentes dos pós de BaW 'O IND. 4'

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Preparação e caracterização de filmes finos Sr1-xMexTiO3(Me=Fe, Ni)

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Estudo das propriedades ópticas e estruturais de espinélios do tipo 'ZNAL IND. 2 O IND. 4' contendo 'EU POT. 3+' ou 'TB POT. 3+'

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo das propriedades estruturais, ópticas e fotocatalíticas do PbMoO4 por intermédio do método hidrotermal

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Photoluminescence of BaZrO3 explained by a order/disorded transformation

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Structural, optical, and magnetic properties of NiMoO4 nanorods prepared by microwave sintering

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)