Studies of 6H-SiC devices

Silicon carbide (SiC) is recently receiving increased attention due to its unique electrical and thermal properties. It has been regarded as the most appropriate semiconductor material for high power, high frequency, high temperature, and radiation hard microelectronic devices. The fabrication processes and characterization of basic device on 6H-SiC were systematically studied. The main works are summarized as follows:The homoepitaxial growth on the commercially available single-crystal 6H-SiC wafers was performed in a modified gas source molecular beam epitaxy system. The mesa structured p(+)n junction diodes on the material were fabricated and characterized. The diodes showed a high breakdown voltage of 800 V at room temperature. They operated with good rectification characteristics from room temperature to 673 K.Using thermal evaporation, Ti/6H-SiC Schottky barrier diodes were fabricated. They showed good rectification characteristics from room temperature to 473 K. Using neon implantation to form the edge termination, the breakdown voltage was improved to be 800 V.n-Type 6H-SiC MOS capacitors were fabricated and characterized. Under the same growing conditions, the quality of polysilicon gate capacitors was better than Al. In addition, SiC MOS capacitors had good tolerance to gamma rays. (C) 2002 Published by Elsevier Science B.V.

One-step synthesis of graphene/SnO2 nanocomposites and its application in electrochemical supercapacitors

A one-step method was developed to fabricate conductive graphene/SnO2 (GS) nanocomposites in acidic solution. Graphite oxides were reduced by SnCl2 to graphene sheets in the presence of HCl and urea. The reducing process was accompanied by generation of SnO2 nanoparticles. The structure and composition of GS nanocomposites were confirmed by means of transmission electron microscopy, x-ray photoelectron and Raman spectroscopy. Moreover, the ultracapacitor characteristics of GS nanocomposites were studied by cyclic voltammograms (CVs) and electrical impedance spectroscopy (EIS). The CVs of GS nanocomposites are nearly rectangular in shape and the specific capacitance degrades slightly as the voltage scan rate is increased. The EIS of GS nanocomposites presents a phase angle close to p/2 at low frequency, indicating a good capacitive behavior.

Synthesis of Ruthenium Dioxide Nanoparticles by a Two-Phase Route and Their Electrochemical Properties

Dissolvable, size- and shape-controlled ruthenium dioxide nanoparticles are successfully achieved through a two-phase route. The influence of reaction time, temperature, and monomer concentration and the nature of capping agents on the morphologies of nanoparticles are studied through transmission electron microscopy (TEM). A possible mechanism for the formation and growth of nanoparticles is also involved. X-ray powder diffraction (XRD) confirms the amorphous structure for as-prepared ruthenium dioxide nanoparticles. Samples are immobilized by simple dip-coating on a current collector, and the cyclic voltammetry measurement is utilized to investigate their electrochemical properties. The specific capacitance of one sample can teach as high as 840 F g(-1), which reveals the promising application potential to electrochemical capacitors.

A room-temperature ionic-liquid-templated proton-conducting gelatinous electrolyte

Novel proton-conducting gelatinous electrolytes templated by room-temperature ionic liquid (RTIL) 1-butyl-3-methyl-imidazolium-tetrafluoroborate (BMImBF(4)) have been prepared in methylsisesquioxane backbone containing H3PO4, and the influences of the RTIL on the structure, morphology, thermal stability, and electrochemical properties of the gelatinous electrolytes have been examined. X-ray diffraction and scanning electron microscopy proved that BMImBF(4) acted as structure-directing template during the sol-gel process of methyl-trimethoxysilane. X-ray photoelectron spectra and infrared spectroscopy demonstrated that the hydrogen-bonding was formed between BMImBF(4) and H3PO4. The electrolytes had good thermal stability up to 300 degreesC and showed superior mechanical and electrochemical properties. A room-temperature conductivity of 1.2 x 10(-3) S cm(-1) was obtained for the electrolyte at the molar ratio of RTIL/Si/H3PO4 0.3/1/1, and its electrochemical window was up to 1.5 V.

POLYANILINE ELECTROLYTIC CAPACITOR

Aluminum solid electrolytic capacitors with polyaniline doped with inorganic and organic acids as counterelectrode were fabricated, their properties were studied.

回转器及其应用

叙述了在自动控制、仪器仪表、信号变换以及传感器信号采集与处理等电路中实现大时间常数的一种新方法。根据近代电工理论中的回转器原理 ,利用运算放大器及电阻、电容器件可以实现模拟电容和模拟电感。给出了理论计算与应用实例