Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications

Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems. III-V semiconductors and their alloys hold a distinct advantage over silicon because they have much higher electron mobility which is a prerequisite for high frequency operation. InGaAs/InP pseudomorphic heterojunction bipolar transistors (HBTs) have demonstrated fT of 765 GHz at room temperature and InP based high electron mobility transistors (HEMTs) have demonstrated fMax of 1.2 THz. The 6.1 A lattice family of InAs, GaSb, AlSb covers a wide variety of band gaps and is an attractive future material system for high speed device development. Extremely high electron mobilities ~ 30,000 cm^2 V^-1s^-1 have been achieved in modulation doped InAs-AlSb structures. The work described in this thesis involves material characterization and process development for HEMT fabrication on this material system.

Nonlinear Optics and Carrier Dynamics in Nanostructured and Two-Dimensional Materials

Understanding and measuring the interaction of light with sub-wavelength structures and atomically thin materials is of critical importance for the development of next generation photonic devices.  One approach to achieve the desired optical properties in a material is to manipulate its mesoscopic structure or its composition in order to affect the properties of the light-matter interaction.  There has been tremendous recent interest in so called two-dimensional materials, consisting of only a single to a few layers of atoms arranged in a planar sheet.  These materials have demonstrated great promise as a platform for studying unique phenomena arising from the low-dimensionality of the material and for developing new types of devices based on these effects.  A thorough investigation of the optical and electronic properties of these new materials is essential to realizing their potential.  In this work we present studies that explore the nonlinear optical properties and carrier dynamics in nanoporous silicon waveguides, two-dimensional graphite (graphene), and atomically thin black phosphorus. We first present an investigation of the nonlinear response of nanoporous silicon optical waveguides using a novel pump-probe method. A two-frequency heterodyne technique is developed in order to measure the pump-induced transient change in phase and intensity in a single measurement. The experimental data reveal a characteristic material response time and temporally resolved intensity and phase behavior matching a physical model dominated by free-carrier effects that are significantly stronger and faster than those observed in traditional silicon-based waveguides.  These results shed light on the large optical nonlinearity observed in nanoporous silicon and demonstrate a new measurement technique for heterodyne pump-probe spectroscopy. Next we explore the optical properties of low-doped graphene in the terahertz spectral regime, where both intraband and interband effects play a significant role. Probing the graphene at intermediate photon energies enables the investigation of the nonlinear optical properties in the graphene as its electron system is heated by the intense pump pulse. By simultaneously measuring the reflected and transmitted terahertz light, a precise determination of the pump-induced change in absorption can be made. We observe that as the intensity of the terahertz radiation is increased, the optical properties of the graphene change from interband, semiconductor-like absorption, to a more metallic behavior with increased intraband processes. This transition reveals itself in our measurements as an increase in the terahertz transmission through the graphene at low fluence, followed by a decrease in transmission and the onset of a large, photo-induced reflection as fluence is increased.  A hybrid optical-thermodynamic model successfully describes our observations and predicts this transition will persist across mid- and far-infrared frequencies.  This study further demonstrates the important role that reflection plays since the absorption saturation intensity (an important figure of merit for graphene-based saturable absorbers) can be underestimated if only the transmitted light is considered. These findings are expected to contribute to the development of new optoelectronic devices designed to operate in the mid- and far-infrared frequency range.  Lastly we discuss recent work with black phosphorus, a two-dimensional material that has recently attracted interest due to its high mobility and direct, configurable band gap (300 meV to 2eV), depending on the number of atomic layers comprising the sample. In this work we examine the pump-induced change in optical transmission of mechanically exfoliated black phosphorus flakes using a two-color optical pump-probe measurement. The time-resolved data reveal a fast pump-induced transparency accompanied by a slower absorption that we attribute to Pauli blocking and free-carrier absorption, respectively. Polarization studies show that these effects are also highly anisotropic - underscoring the importance of crystal orientation in the design of optical devices based on this material. We conclude our discussion of black phosphorus with a study that employs this material as the active element in a photoconductive detector capable of gigahertz class detection at room temperature for mid-infrared frequencies.

Radio Frequency Superconducting Quantum Interference Device Meta-atoms and Metamaterials: Experiment, Theory, and Analysis

Metamamterials are 1D, 2D or 3D arrays of articial atoms. The articial atoms, called "meta-atoms", can be any component with tailorable electromagnetic properties, such as resonators, LC circuits, nano particles, and so on. By designing the properties of individual meta-atoms and the interaction created by putting them in a lattice, one can create a metamaterial with intriguing properties not found in nature. My Ph. D. work examines the meta-atoms based on radio frequency superconducting quantum interference devices (rf-SQUIDs); their tunability with dc magnetic field, rf magnetic field, and temperature are studied. The rf-SQUIDs are superconducting split ring resonators in which the usual capacitance is supplemented with a Josephson junction, which introduces strong nonlinearity in the rf properties. At relatively low rf magnetic field, a magnetic field tunability of the resonant frequency of up to 80 THz/Gauss by dc magnetic field is observed, and a total frequency tunability of 100% is achieved. The macroscopic quantum superconducting metamaterial also shows manipulative self-induced broadband transparency due to a qualitatively novel nonlinear mechanism that is different from conventional electromagnetically induced transparency (EIT) or its classical analogs. A near complete disappearance of resonant absorption under a range of applied rf flux is observed experimentally and explained theoretically. The transparency comes from the intrinsic bi-stability and can be tuned on/ off easily by altering rf and dc magnetic fields, temperature and history. Hysteretic in situ 100% tunability of transparency paves the way for auto-cloaking metamaterials, intensity dependent filters, and fast-tunable power limiters. An rf-SQUID metamaterial is shown to have qualitatively the same behavior as a single rf-SQUID with regards to dc flux, rf flux and temperature tuning. The two-tone response of self-resonant rf-SQUID meta-atoms and metamaterials is then studied here via intermodulation (IM) measurement over a broad range of tone frequencies and tone powers. A sharp onset followed by a surprising strongly suppressed IM region near the resonance is observed. This behavior can be understood employing methods in nonlinear dynamics; the sharp onset, and the gap of IM, are due to sudden state jumps during a beat of the two-tone sum input signal. The theory predicts that the IM can be manipulated with tone power, center frequency, frequency difference between the two tones, and temperature. This quantitative understanding potentially allows for the design of rf-SQUID metamaterials with either very low or very high IM response.

Caractéristiques d’antennes térahertz photoconductrices de type micro-ruban coplanaire

Ce projet de recherche a permis d'étudier l'émission d'un rayonnement térahertz (THz) par des antennes photoconductrices (PC) émettrices de type micro-ruban coplanaire. Ces antennes sont fabriquées sur substrats d'arséniure de gallium semi-isolant (GaAs-SI) ou sur ce même substrat ayant subit un traitement d'implantation ionique aux protons suivi d'un recuit thermique (GaAs:H). L'influence de ce procédé de fabrication sur les propriétés du matériau photoconducteur et sur les caractéristiques de l'antenne émettrice a été étudiée. Des mesures de photoconductivité résolue en temps effectuées sur les deux types de substrat montrent que le procédé d'implantation/recuit a eu pour effet de diminuer le temps de vie des photoporteurs de 630 ps à environ 4 ps, tandis que la mobilité n'est réduite que d'un facteur maximum de 1,6. Cette valeur de la mobilité des photoporteurs a par ailleurs été estimée à environ 100 cm$^2$/(V.s) pour le substrat GaAs:H. Les mesures électriques effectuées sur les antennes fabriquées sur les deux types de substrat montrent que le procédé d'implantation/recuit permet d'augmenter la résistivité de la couche active du dispositif d'un facteur 10 (elle passerait de 10$^{8}$ $\Omega$.cm pour le GaAs-SI à 10$^9$ $\Omega$.cm pour le GaAs:H). Les courbes courant-tension, en obscurité et sous illumination, de ces antennes suggèrent également que la densité de pièges profonds est fortement augmentée suite au traitement d'implantation/recuit. L'étude des caractéristiques des diverses antennes a permis de montrer l'intérêt de ce procédé de fabrication. Pour les antennes fabriquées sur GaAs:H, la largeur de bande est améliorée (elle atteint environ 3 THz) et l'amplitude du champ THz émis est augmentée par un facteur 1,4 (dans les mêmes conditions expérimentales). Le rapport signal/bruit des traces THz mesurées sur les antennes les plus performantes est $>$ 200. Une plus grande résistivité et une densité de pièges profonds plus élevée, permet d'appliquer de plus fortes tensions de polarisation sur ces antennes GaAs:H. Finalement, nos résultats ont montré que les améliorations des caractéristiques d'émission de ces antennes THz sont corrélées à la présence d'un champ électrique local plus élevé du coté de l'anode du dispositif.

Wireless solutions for the industrial internet of things

The fourth industrial revolution is paving the way for Industrial Internet of Things applications where industrial assets (e.g., robotic arms, valves, pistons) are equipped with a large number of wireless devices (i.e., microcontroller boards that embed sensors and actuators) to enable a plethora of new applications, such as analytics, diagnostics, monitoring, as well as supervisory, and safety control use-cases. Nevertheless, current wireless technologies, such as Wi-Fi, Bluetooth, and even private 5G networks, cannot fulfill all the requirements set up by the Industry 4.0 paradigm, thus opening up new 6G-oriented research trends, such as the use of THz frequencies. In light of the above, this thesis provides (i) a broad overview of the main use-cases, requirements, and key enabling wireless technologies foreseen by the fourth industrial revolution, and (ii) proposes innovative contributions, both theoretical and empirical, to enhance the performance of current and future wireless technologies at different levels of the protocol stack. In particular, at the physical layer, signal processing techniques are being exploited to analyze two multiplexing schemes, namely Affine Frequency Division Multiplexing and Orthogonal Chirp Division Multiplexing, which seem promising for high-frequency wireless communications. At the medium access layer, three protocols for intra-machine communications are proposed, where one is based on LoRa at 2.4 GHz and the others work in the THz band. Different scheduling algorithms for private industrial 5G networks are compared, and two main proposals are described, i.e., a decentralized scheme that leverages machine learning techniques to better address aperiodic traffic patterns, and a centralized contention-based design that serves a federated learning industrial application. Results are provided in terms of numerical evaluations, simulation results, and real-world experiments. Several improvements over the state-of-the-art were obtained, and the description of up-and-running testbeds demonstrates the feasibility of some of the theoretical concepts when considering a real industry plant.