The effect of inclined soil layers on surface vibration from underground railways using a semi-analytical approach

Ground vibration due to underground railways is a significant source of disturbance for people living or working near the subways. The numerical models used to predict vibration levels have inherent uncertainty which must be understood to give confidence in the predictions. A semi-analytical approach is developed herein to investigate the effect of soil layering on the surface vibration of a halfspace where both soil properties and layer inclination angles are varied. The study suggests that both material properties and inclination angle of the layers have significant effect ( ± 10dB) on the surface vibration response. © 2009 IOP Publishing Ltd.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

Semi-analytic slope delay model for CMOS switch-level timing verification

A novel slope delay model for CMOS switch-level timing verification is presented. It differs from conventional methods in being semianalytic in character. The model assumes that all input waveforms are trapezoidal in overall shape, but that they vary in their slope. This simplification is quite reasonable and does not seriously affect precision, but it facilitates rapid solution. The model divides the stages in a switch-level circuit into two types. One corresponds to the logic gates, and the other corresponds to logic gates with pass transistors connected to their outputs. Semianalytic modeling for both cases is discussed.

Transparent electrode with a nanostructured coating.

Using single-walled nanotubes as an example, we fabricated transparent conductive coatings and demonstrated a new technique of centrifuge coating as a potential low-waste, solution-based batch process for the fabrication of nanostructured coatings. A theoretical model is developed to account for the sheet resistance exhibited by layered random-network coatings such as nanofilaments and graphene. The model equation is analytical and compact, and allows the correlation of very different scaling regimes reported in the literature to the underlying coating microstructure. Finally, we also show a refined experimental setup to systematically measure the curvature-dependent sheet resistance.

A Semi-Empirical Equation of Penetration Depth on Concrete Target Impacted by Ogive-Nose Projectiles

In this paper, the penetration process of ogive-nose projectiles into the semi-infinite concrete target is investigated by the dimensional analysis method and FEM simulation. With the dimensional analysis, main non-dimensional parameters which control the penetration depth are obtained with some reasonable hypothesis. Then, a new semi-empirical equation is present based on the original work of Forrestal et al., has only two non-dimensional combined variables with definite physical meanings. To verify this equation, prediction results are compared with experiments in a wide variation region of velocity. Then, a commercial FEM code, LS-DYNA, is used to simulate the complex penetration process, that also show the novel semi-empirical equation is reasonable for determining the penetration depth in a concrete target.

Semi-weight function method on computation of stress intensity factors in dissimilar materials

Semi-weight function method is developed to solve the plane problem of two bonded dissimilar materials containing a crack along the bond. From equilibrium equation, stress and strain relationship, conditions of continuity across interface and free crack surface, the stress and displacement fields were obtained. The eigenvalue of these fields is lambda. Semi-weight functions were obtained as virtual displacement and stress fields with eigenvalue-lambda. Integral expression of fracture parameters, K-I and K-II, were obtained from reciprocal work theorem with semi-weight functions and approximate displacement and stress values on any integral path around crack tip. The calculation results of applications show that the semi-weight function method is a simple, convenient and high precision calculation method.

Semi-gas kinetics model for performance modeling of flowing chemical oxygen-iodine lasers (COIL)

A semi-gas kinetics (SGK) model for performance analyses of flowing chemical oxygen-iodine laser (COIL) is presented. In this model, the oxygen-iodine reaction gas flow is treated as a continuous medium, and the effect of thermal motions of particles of different laser energy levels on the performances of the COIL is included and the velocity distribution function equations are solved by using the double-parameter perturbational method. For a premixed flow, effects of different chemical reaction systems, different gain saturation models and temperature, pressure, yield of excited oxygen, iodine concentration and frequency-shift on the performances of the COIL are computed, and the calculated output power agrees well with the experimental data. The results indicate that the power extraction of the SGK model considering 21 reactions is close to those when only the reversible pumping reaction is considered, while different gain saturation models and adjustable parameters greatly affect the output power, the optimal threshold gain range, and the length of power extraction.

Directly synthesized strong, highly conducting, transparent single-walled carbon nanotube films

We report the direct synthesis of strong, highly conducting, and transparent single-walled carbon nanotube (SWNT) films. Systematically, tests reveal that the directly synthesized films have superior electrical and mechanical properties compared with the films made from a solution-based filtration process: the electrical conductivity is over 2000 S/cm and the strength can reach 360 MPa. These values are both enhanced by more than 1 order. We attribute these intriguing properties to the good and long interbundle connections. Moreover, by the help of an extrapolated Weibull theory, we verify the feasibility of reducing the interbundle slip by utilizing the long-range intertube friction and estimate the ultimate strength of macroscale SWNTs without binding agent.