Learning automata in feedforward connectionist systems

This paper analyses the behaviour of a general class of learning automata algorithms for feedforward connectionist systems in an associative reinforcement learning environment. The type of connectionist system considered is also fairly general. The associative reinforcement learning task is first posed as a constrained maximization problem. The algorithm is approximated hy an ordinary differential equation using weak convergence techniques. The equilibrium points of the ordinary differential equation are then compared with the solutions to the constrained maximization problem to show that the algorithm does behave as desired.

Probabilistic extension to realistic abductive reasoning model

In this paper, we give a method for probabilistic assignment to the Realistic Abductive Reasoning Model, The knowledge is assumed to be represented in the form of causal chaining, namely, hyper-bipartite network. Hyper-bipartite network is the most generalized form of knowledge representation for which, so far, there has been no way of assigning probability to the explanations, First, the inference mechanism using realistic abductive reasoning model is briefly described and then probability is assigned to each of the explanations so as to pick up the explanations in the decreasing order of plausibility.

Rapid thermal processed thin films of niobium pentoxide (Nb2 O5) deposited by reactive magnetron sputtering

Niobium pentoxide thin films have been deposited on silicon and platinum-coated silicon substrates by reactive magnetron sputtering. The as-deposited films were amorphous and showed good electrical properties in terms of a dielectric permittivity of about 30, and leakage current density of 10(-6) A cm(-2) al a field of 120 kV cm(-1). A rapid thermal annealing process at 800 degrees C further increased the dielectric constant to 90 and increased the leakage current density to 5 x 10(-6) A cm(-2). The current-voltage characteristics observed at low and high fields suggested a combination of phenomena at different regimes of applied electric field. The capacitance-voltage characteristics performed in the metal-insulator-semiconductor configuration indicated good electronic interfaces with a nominal trap density of 4.5 x 10(12) cm(-2) eV(-1), which is consistent with the behavior observed with conventional dielectrics such as SiO2 on silicon surfaces.

Reactive magnetron co?sputtered antiferroelectric lead zirconate thin films

Antiferroelectric lead zirconate thin films were formed on platinum coated silicon substrates by a reactive magnetron co-sputtering method. The films showed (240) preferred orientation. The crystallization temperatures and the preferred orientation were affected by the lead content in the films. The electric field forced transformation from the antiferroelectric phase to the ferroelectric phase was observed at room temperature with a maximum polarization value of 36 mu C/cm(2). The average field to excite the ferroelectric state and that for the reversion to the antiferroelectric state were 267 and 104 kV/cm respectively. (C) 1995 American Institute of Physics.

Learning the global maximum with parameterized learning automata

A feedforward network composed of units of teams of parameterized learning automata is considered as a model of a reinforcement teaming system. The internal state vector of each learning automaton is updated using an algorithm consisting of a gradient following term and a random perturbation term. It is shown that the algorithm weakly converges to a solution of the Langevin equation implying that the algorithm globally maximizes an appropriate function. The algorithm is decentralized, and the units do not have any information exchange during updating. Simulation results on common payoff games and pattern recognition problems show that reasonable rates of convergence can be obtained.

Lasing in active, sub-mean-free path-sized systems with dense, random, weak scatterers

We report enhanced emission and gain narrowing in Rhodamine 590 perchlorate dye in an aqueous suspension of polystyrene microspheres. A systematic experimental study of the threshold condition for and the gain narrowing of the stimulated emission over a wide range of dye concentrations and scatterer number densities showed several interesting features, even though the transport mean free path far exceeded the system size. The conventional diffusive-reactive approximation to radiative transfer in an inhomogeneously illuminated random amplifying medium, which is valid for a transport mean-free path much smaller than the system size, is clearly inapplicable here. We propose a new probabilistic approach for the present case of dense, random, weak scatterers involving the otherwise rare and ignorable sub-mean-free-path scatterings, now made effective by the high gain in the medium, which is consistent: with experimentally observed features. (C) 1997 Optical Society of America.

Optical and structural properties of reactive ion beam sputter deposited CeO2 films

Optical and structural properties of reactive ion beam sputter deposited CeO2 films as a function of oxygen partial pressures (P-O2) and substrate temperatures (T-s) have been investigated. The films deposited at ambient temperature with P-O2 of 0.01 Pa have shown a refractive index of 2.36 which increased to 2.44 at 400 degrees C. Refractive index and extinction coefficient are sensitive up to a T-s of similar to 200 degrees C. Raman spectroscopy and X-ray diffraction (XRD) have been used to characterise the structural properties. A preferential orientation of (220) was observed up to a T-s of 200 degrees C and it changed to (200) at 400 degrees C: and above. Raman line broadening, peak shift and XRD broadening indicate the formation of nanocrystalline phase for the films deposited up to a substrate temperature of 300 degrees C. However, crystallinity of the films were better for T-s values above 300 degrees C. In general both optical and structural properties were unusual compared to the films deposited by conventional electron beam evaporation, but were similar in some aspects to those deposited by ion-assisted deposition. Apart from thermal effects, this behavior is also attributed to the bombardment of backscattered ions/neutrals on the growing film as well as the higher kinetic energy of the condensing species, together resulting in increased packing density. (C) 1997 Elsevier Science S.A.

A checking method for probabilistic seismic-hazard assessment: case studies on three cities

The conventional Cornell's source-based approach of probabilistic seismic-hazard assessment (PSHA) has been employed all around the world, whilst many studies often rely on the use of computer packages such as FRISK (McGuire FRISK-a computer program for seismic risk analysis. Open-File Report 78-1007, United States Geological Survey, Department of Interior, Washington 1978) and SEISRISK III (Bender and Perkins SEISRISK III-a computer program for seismic hazard estimation, Bulletin 1772. United States Geological Survey, Department of Interior, Washington 1987). A ``black-box'' syndrome may be resulted if the user of the software does not have another simple and robust PSHA method that can be used to make comparisons. An alternative method for PSHA, namely direct amplitude-based (DAB) approach, has been developed as a heuristic and efficient method enabling users to undertake their own sanity checks on outputs from computer packages. This paper experiments the application of the DAB approach for three cities in China, Iran, and India, respectively, and compares with documented results computed by the source-based approach. Several insights regarding the procedure of conducting PSHA have also been obtained, which could be useful for future seismic-hazard studies.

Preparation of transparent conductive oxide films by activated reactive evaporation

Indium-tin oxide films have been deposited by reactive electron beam evaporation of ln+Sn alloy both in neutral and ionized oxygen environments. A low-energy ion source (fabricated in-house) has been used. Films deposited with neutral oxygen exhibited very low optical transmittance (5% at 550 nm). Highly transparent (85%) and low-resistivity (5 X 10(-4) Omega cm) films have been deposited in ionized oxygen at ambient substrate temperature. Optical and electrical properties of the films have been studied as a function of deposition parameters. (C) 2002 Society of Photo-Optical Instrumentation Engineers.

The production of AlN-rich matrix composites by the reactive infiltration of Al alloys in nitrogen

Aluminium nitride (AlN)-Al matrices reinforced with Al2O3 particulate have been fabricated by reactive infiltration of Al-2% Mg alloy into Al2O3 preforms in N-2 in the temperature range of 900-1075 degreesC. The growth of composites of useful thickness was facilitated by the presence of a Mg-rich external getter, in the absence of which composite growth is self-limiting and terminates prematurely. Successful growth of composites has been attributed to the reduction in residual oxygen partial pressure brought about by the reaction with oxygen of highly volatile Mg in the getter alloy. The microstructure of the matrix consists of AlN-rich regions contiguous with the particulate with metal-rich channels in-between, thereby suggesting that nitridation initiates by preferential wicking of alloy along the particle surfaces. The increase in nitride content of the matrix with temperature is consistent with hardness values that vary between similar to3 and 10 GPa. (C) 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.

Photocatalytic activity of ZnO nanostructured film grown by activated reactive

ZnO nanostructured films were deposited at room temperature on glass substrates and cotton fabrics by activated reactive evaporation in a single step without using metal catalyst or templates. Morphological observation has shown that the nanostructured film contains seaurchin-like structures, and this seaurchin containing large number of randomly grown ZnO nanoneedles. Microstructural analysis revealed the single crystalline nature of the grown nanoneedles and their growth direction was indentified to be along [0002]. PL spectrum of nanostructured films has shown a relatively weak near-band-edge emission peak at 380 nm, and a significant broad peak at 557 nm due to the oxygen vacancy-related emission. ZnO nanostructured films grown on glass substrates and cotton fabrics have shown good photocatalytic activity against rhodamine B.

Reactive Diffusion Between Vanadium and Silicon

Interdiffusion study is conducted in the V-Si system to determine integrated diffusion coefficients of the phases. Activation energy values are calculated from the experiments conducted at different temperatures. The average values are found to be 208, 240 and 141 kJ/mol, respectively, for the V(3)Si, V(5)Si(3) and VSi(2) phases. The low activation energy for the VSi(2) phase indicates very high concentration of defects or the significant contribution from the grain boundary diffusion. The error in calculation of diffusion parameters from a very thin phase layer in a multiphase diffusion couple is discussed. Further the data available in the literature in this system is compared and the problems in the indirect methodology followed previously to calculate the diffusion parameters are discussed.