Impact of oxygen atmosphere on piezoelectric properties of CaBi2Nb2O9 thin films

CaBi2Nb2O9 (CBNO) thin films were deposited on platinum-coated silicon substrates by the polymeric precursor method, and were annealed in air and in an oxygen atmosphere. The structure, surface morphology and electrical properties of CBNO thin films have been investigated. The presence of an oxygen atmosphere during crystallization of the films affected the structure perfection and morphology, as well as ferroelectric and piezoelectric properties. A reduction in P-r and piezoelectric coefficient, an increase of V-c and displacement of the Curie point is evident in the films crystallized in an oxygen atmosphere. The impact of exposure to the oxygen atmosphere on the creation of defects caused by bismuth and oxygen vacancies between layers was also investigated by X-ray photoelectron spectroscopy. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

The effect of Sb and Nb on the electrical conductivity of tin dioxide based ceramics

The electrical conductivity of Mn doped SnO2 systems prepared by an organic route (Pechini's method) has been investigated as a function of antimony and niobium concentration. The conductivity increases with the increase of both concentration ions, however, in a different manner. While the conductivity of niobium doped ceramics increases with the power of 1.6 for the entire range of concentrations studied (0.01-0.7 mol%), the conductivity of antimony doped ceramics increases with the power of 1.9 in the range 0.01-0.05 mol% of Sb; 3.7 in the range 0.05-0.30 mol% and 1.8 in the range 0.30-0.70 mol%. This behavior is attributed to the existence of two stable oxidation states for antimony: Sb3+ and Sb5+, while for niobium there is only one: Nb5+. The power of 3.7 for Sb would be related to the segregation of this ion on the grain boundary accompanied by an additional contribution coming from the substitution of Sn2+ by Sb3+ on the grain surface.

Ferroelectric and dielectric properties of vanadium-doped Ba(Ti0.90Zr0.10)O-3 ceramics

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Dielectric investigations of vanadium modified barium zirconium titanate ceramics obtained from mixed oxide method

Vanadium modified barium zirconium titanate ceramics Ba(Zr(0.10)Ti(0.90))O(3):2V (BZT:2V) were prepared from the mixed oxide method. According to X-ray diffraction analysis, addition of vanadium leads to ceramics free of secondary phases. Electrical characteristics reveal a dielectric permittivity at around 15,000 with low dielectric loss with a remnant polarization (P(r))of 8 mu C/cm(2) at 2 kV/cm. From the obtained results, we assume that vanadium substitution in the BZT lattice affects dielectric characteristics due to the electron-relaxation-mode in which carriers (polarons, protons, and so on) are coupled with existing dielectric modes. (C) 2009 Published by Elsevier B.V.

Rietveld analysys and electrical properties of lanthanum doped BiFeO3 ceramics

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Structure and ferro/piezoelectric properties of SrBi(4)Ti(4)O(15) films deposited on TiO(2) buffer layer

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Schottky-type grain boundaries in CCTO ceramics

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Effect of oxidizing atmosphere on ferroelectric and piezoelectric response of CaBi2Nb2O9 thin films

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Effect of heat treatment on the generation of structural defects in LaTaO4 ceramics and their correlation with photoluminescent properties

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Structural Investigations of Glass Ceramics in the Ga2S3-GeS2-CsCl System

Transparent glass ceramics have been prepared in the Ga2S3-GeS2-CsCI pseudoternary system appropriate heat treatment time and temperature. In situ X-ray diffraction at the heat treatment temperature and Cs-133 and Ga-71 solid-state nuclear magnetic resonance have been performed in function of annealing time to understand the crystallization process. Both techniques have evidenced the nucleating agent role played by gallium with the formation of Ga2S3 nanocrystals. on the other hand, cesium is incorporated very much later into the crystallites during the ceramization. Moreover, the addition of CsCl, which is readily integrated into the glassy network, permits us to shift the optical band gap toward shorter wavelength. Thus, new glass ceramics transmitting in the whole visible range up to 11.5 mu m have been Successfully synthesized from the (Ga2S3)(35)-(GeS2)(25)-CsCl40 base glass composition.

Synthesis and Structural Studies of Er3+ Containing Lead Cadmium Fluoroborate Glasses and Glass-Ceramics

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Physical and mechanical properties of ceramics from clays of the west of S. Paulo State, Brazil

Argilas de interesse da indústria de cerâmica estrutural foram caracterizadas. Algumas propriedades físicas de diversas massas cerâmicas, preparadas a partir de material coletado em depósitos artificiais, também foram analisadas. Todas as massas investigadas exibem alta concentração de componentes finos (< 2 mim) e considerável grau de plasticidade, o que é compatível com a presença de elevado teor de argilominerais. Corpos de prova cerâmicos foram preparados por prensagem a seco e queimados em temperaturas ao redor de 855 °C. Os parâmetros resistência mecânica à flexão, retração linear, absorção de água, cor aparente e perda de peso foram medidos. Como resultado, as aplicações industriais destas matérias primas foram analisadas e revistas, bem como novas aplicações foram propostas.

Electronic ceramics based on polycrystalline SnO2, TiO2 and (Sn xTi1-x)O2 solid solution

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Piezoelectric behaviour of PZT doped with calcium: A combined experimental and theoretical study

An experimental and theoretical study on the piezoelectric behaviour of PZT doped with a range of calcium ion concentrations is presented. A systematic study of the effect on the piezoelectric properties of PZT doped with various concentrations of CaO at constant sintering temperature and sintering time was carried out. The remanent polarization, planar coupling factor and frequency-thickness constant increase with calcium concentration. Ab initio perturbed ion calculations show that the lattice energy decreases with calcium addition for both tetragonal and rhombohedral phases of PZT.