Numerical simulation of encapsulant curing within a variable frequency microwave processing system

Curing of encapsulant material in a simplified microelectronics package using an open oven Variable Frequency Microwave (VFM) system is numerically simulated using a coupled solver approach. A numerical framework capable of simulating electromagnetic field distribution within the oven system, plus heat transfer, cure rate, degree of cure and thermally induced stresses within the encapsulant material is presented. The discrete physical processes have been integrated into a fully coupled solution, enabling usefully accurate results to be generated. Numerical results showing the heating and curing of the encapsulant material have been obtained and are presented in this contribution. The requirement to capture inter-process coupling and the variation in dielectric and thermophysical material properties is discussed and illustrated with simulation results.

Numerical simulation of heat transfer in rectangular microchannel

Numerical simulation of heat transfer in a high aspect ratio rectangular microchannel with heat sinks has been conducted, similar to an experimental study. Three channel heights measuring 0.3 mm, 0.6mmand 1mmare considered and the Reynolds number varies from 300 to 2360, based on the hydraulic diameter. Simulation starts with the validation study on the Nusselt number and the Poiseuille number variations along the channel streamwise direction. It is found that the predicted Nusselt number has shown very good agreement with the theoretical estimation, but some discrepancies are noted in the Poiseuille number comparison. This observation however is in consistent with conclusions made by other researchers for the same flow problem. Simulation continues on the evaluation of heat transfer characteristics, namely the friction factor and the thermal resistance. It is found that noticeable scaling effect happens at small channel height of 0.3 mm and the predicted friction factor agrees fairly well with an experimental based correlation. Present simulation further reveals that the thermal resistance is low at small channel height, indicating that the heat transfer performance can be enhanced with the decrease of the channel height.

Numerical simulation of the charge balance in an EBIT

The electron beam ions traps (EBITs) are widely used to study highly charged ions (HCIs). In an EBIT, a high energy electron beam collides with atoms and ions to generate HCIs in the trap region. It is important to study the physics in the trap. The atomic processes, such as electron impact ionisation (EI), radiative recombination (RR), dielectronic recombination (DR) and charge exchange (CX), occur in the trap and numerical simulation can give some parameters for design, predict the composition and describe charge state evolution in an EBIT [Phys. Rev. A 43 (199 1) 4861]. We are presently developing a new code, which additionally includes a description of the overlaps between the ion clouds of the various charge-states. It has been written so that it can simulate experiments where various machine parameters (e.g. beam energy and current) can vary throughout the simulation and will be able to use cross- sections either based on scaling laws or derived from atomic structure calculations. An object-oriented method is used in developing the new software, which is an efficient way to organize and write code. (C) 2003 Elsevier Science B.V. All rights reserved.

Numerical simulation of separation factor of NaCl in surface force pore flow model

This work deals with modelling and experimental verification of desalination theory (surface force pore flow) . The work has direct application in desalination of sea water.

Numerical simulation of the charge balance and temperature evolution in an electron beam ion trap

A computer code has been developed to simulate and study the evolution of ion charge states inside the trap region of an electron beam ion trap. In addition to atomic physics phenomena previously included in similar codes such as electron impact ionization, radiative recombination, and charge exchange, several aspects of the relevant physics such as dielectronic recombination, ionization heating, and ion cloud expansion have been included for the first time in the model. The code was developed using object oriented concepts with database support, making it readable, accurate, and well organized. The simulation results show a good agreement with various experiments, and give useful information for selection of operating conditions and experiment design.