Tunneling magnetoresistance in (Ga,Mn)As/Al-O/CoFeB hybrid structures

Tunneling magnetoresistance (TMR) in Ga(0.9)2Mn(0.08)As/Al-O/Co40Fe40B20 trilayer hybrid structure as a function of temperature from 10 to 50 K with magnetic field vertical bar H vertical bar <= 2000 Oe has been studied. TMR ratio of 1.6% at low fields at 10 K was achieved with the applied current of 1 mu A. The behavior of junction resistance was well explained by the tunneling resistance across the barrier. Strong bias dependences of magnetoresistance and junction resistance were presented. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3068418]

Fabrication of a novel silica PLC hybrid integrated triplexer

A new-style silica planar lightwave circuit (PLC) hybrid integrated triplexer, which can demultiplex 1490-nm download data and 1550-nm download analog signals, as well as transmit 1310-nm upload data, is presented. It combines SiO2 arrayed waveguide gratings (AWGs) with integrated photodetectors (PDs) and a high performance laser diode (LD). The SiO2 AWGs realize the three-wavelength coarse wavelength-division multiplexing (CWDM). The crosstalk is less than 40 dB between the 1490- and 1550-nm channels, and less than 45 dB between 1310- and 1490- or 1550-nm channels. For the static performances of the integrated triplexer, its upload output power is 0.4 mW, and the download output photo-generated current is 76 A. In the small-signal measurement, the upstream 3-dB bandwidth of the triplexer is 4 GHz, while the downstream 3-dB bandwidths of both the analog and digital sections reach 1.9 GHz.

A Hybrid Random Number Generator Using Single Electron Tunneling Junctions and MOS Transistors

This paper proposes a novel single electron random number generator (RNG). The generator consists of multiple tunneling junctions (MTJ) and a hybrid single electron transistor (SET)/MOS output circuit. It is an oscillator-based RNG. MTJ is used to implement a high-frequency oscillator,which uses the inherent physical randomness in tunneling events of the MTJ to achieve large frequency drift. The hybrid SET and MOS output circuit is used to amplify and buffer the output signal of the MTJ oscillator. The RNG circuit generates high-quality random digital sequences with a simple structure. The operation speed of this circuit is as high as 1GHz. The circuit also has good driven capability and low power dissipation. This novel random number generator is a promising device for future cryptographic systems and communication applications.

A Novel Three-Section Self-Pulsating DFB Laser with Hybrid Grating

A 1.55μm InGaAsP-InP three-section DFB laser with hybrid grating is fabricated and self-pulsations (SP) with frequencies around 20GHz are observed. The mechanism of SP generation in this device is researched. Furthermore, the important role of the phase tuning section on the SP is investigated.

Flip-chip bonded hybrid CMOS/SEED optoelectronic smart pixels

Hybrid integration of GaAs/AlGaAs multiple quantum well self electro-optic effect device (SEED) arrays are demonstrated flip-chip bonded directly onto 1 mu m silicon CMOS circuits. The GaAs/AlGaAs MQW devices are designed for 850 nm operation. Some devices are used as input light detectors and others serve as output light modulators. The measurement results under applied biases show good optoelectronic characteristics of elements in SEED arrays. Nearly the same reflection spectrum is obtained for the different devices at an array and the contrast ratio is more than 1.2:1 after flip-chip bonding and packaging. The transimpedance receiver-transmitter circuit can be operated at a frequency of 300 MHz.

Alleviation of pre-exposure of mouse brain with low-dose C-12(6+) ion or Co-60 gamma-ray on male reproductive endocrine damages induced by subsequent high-dose irradiation

Irradiation has been widely reported to damage organisms by attacking on proteins, nucleic acid and lipids in cells. However, radiation hormesis after low-dose irradiation has become the focus of research in radiobiology in recent years. To investigate the effects of pre-exposure of mouse brain with low-dose C-12(6+) ion or Co-60 gamma (gamma)-ray on male reproductive endocrine capacity induced by subsequent high-dose irradiation, the brains of the B6C3F(1) hybrid strain male mice were irradiated with 0.05 Gy of C-12(6+) ion or Co-60 gamma-ray as the pre-exposure dose, and were then irradiated with 2 Gy as challenging irradiation dose at 4 h after pre-exposure. Serum pituitary gonadotropin hormones, follicle-stimulating hormone (FSH) and luteinizing hormone (LH), testosterone, testis weight, sperm count and shape were measured on the 35th day after irradiation. The results showed that there was a significant reduction in the levels of serum FSH, LH, testosterone, testis weight and sperm count, and a significant increase in sperm abnormalities by irradiation of the mouse brain with 2 Gy of C-12(6+) ion or Co-60 gamma-ray. Moreover, the effects were more obvious in the group irradiated by C-12(6+) ion than in that irradiated by Co-60 gamma-ray. Pre-exposure with low-dose C-12(6+) ion or Co-60 gamma-ray significantly alleviated the harmful effects induced by a subsequent high-dose irradiation.

One-step preparation of hybrid materials of polyacrylamide networks and gold nanoparticles

Hybrid materials of polyacrylamide networks and gold nanoparticles were prepared by directly heating an aqueous solution containing HAuCl4, acrylamide, N,N'-methylenebisacrylamide, and sodium sulfite (Na2SO3). Acrylamide, N,N'-methylenebisacrylamide, and Na2SO3 were used as monomers, crosslinking agent, and initiator, respectively.

Preparation and characterization of polyimide/Al2O3 hybrid films by sol-gel process

A sol-gel process has been developed to prepare polyimide (PI)/Al2O3 hybrid films with different contents of Al2O3 based on pyromellitic dianhydride (PMDA) and 4,4'-oxydianiline (ODA) as monomers. FESEM and TEM images indicated that Al2O3 particles are relatively well dispersed in the polyimide matrix after ultrasonic treatment of the sol from aluminum isopropoxide and thermal imidization of the gel film. The dimensional stability, thermal stability, mechanical properties of hybrid PI films were improved obviously by an addition of adequate Al2O3 content, whereas, dielectric property and the elongation at break decreased with the increase of Al2O3 content. Surprisingly, the corona-resistance property of hybrid film was improved greatly with increasing Al2O3 content within certain range as compared with pure PI film.

Quantum dots-bienzyme hybrid system for the sensitive determination of glucose

In this paper, we attempt to develop a sensitive detection method for glucose with the combination of the unique optical property of quantum dots and the specificity of enzymatic reactions. With glucose and hydroquinone as substrates, benzoquinone that intensively quenches the photoluminescence of quantum dots can be produced via the catalysis of bienzyme (glucose oxidase and horseradish peroxidase) system. A relatively low detection limit of 1.0 x 10(-8) mol/L can be achieved. Two linear ranges from 1.0 x 10(-6) to 1.5 x 10(-4) M and from 1.5 x 10(-4) to 1.0 x 10(-3) M were obtained.

STRUCTURAL EVOLUTION AND COMPOSITION CHANGE IN THE SURFACE REGION OF POLYPROPYLENE/CLAY NANOCOMPOSITES ANNEALED AT HIGH TEMPERATURES

A model experiment was done to clear the formation mechanism of protective layers during combustion of polypropylene (PP)/organically modified montmorillonite (OMMT) nanocomposites. The investigation was focused on the effects of annealing temperature on the structural changes and protective layer formation. The decomposition of OMMT and degradation of PP/OMMT nanocomposites were characterized by means of thermogravimetric analysis (TGA). The structural evolution and composition change in the surface region of PP/OMMT nanocomposites during heating were monitored by means of X-ray photoelectron spectroscopy (XPS), ATR-FTIR and field emission scanning electron microscopy (FESEM).

Vertical structure permeable-base hybrid transistors based on multilayered metal base for stable electrical characteristics

In this work we present a permeable base transistor consisting of a 60 nm thick N,N'diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a CalAl/Ca multilayer as the metal base, and p-Si as collector. In the base, the Ca layers are 5 nm thick and the Al layer was varied between 10 and 40 nm. the best results obtained with a 20 nm thick layer. The devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. The obtained common-emitter current gain, similar to 2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. Air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation.

Effect of silver nanoparticles on luminescent properties of europium complex in di-ureasil hybrid materials

Organic-inorganic hybrids containing luminescent lanthanide complex Eu(tta)(3)Phen (tta = thenoyltrifluoroaceton, phen = 1,10-phenanthroline) and silver nanoparticles have been prepared via mixing rare earth complex and nanoparticles with the precursors of di-ureasil using a sol-gel process. The obtained hybrid materials with transparent and elastomeric features were characterized by transmission electron microscope, solid-state Si-29 magic-angle spinning NMR spectra, diffuse reflectance, UV-visible absorption and photoluminescence spectroscopies. The effect of the silver nanoparticles on the luminescence properties was investigated. The experimental results showed that the luminescence intensity of the Eu(tta)(3)phen complex could be enhanced by less than ca. 9.5 nM of silver nanoparticles with the average diameter of 4 nm, and reached its maximum at the concentration of ca. 3.6 nM. Further increasing the concentration of the silver nanoparticles (> 9.5 nM) made the luminescence quenched. The enchancement and quench mechnism was discussed.