993 resultados para Metals removal


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In this paper, we propose a systolic architecture for hidden-surface removal. Systolic architecture is a kind of parallel architecture best known for its easy VLSI implementability. After discussing the design details of the architecture, we present the results of the simulation experiments conducted in order to evaluate the performance of the architecture.

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We point out that the Mooij correlation follows naturally from a dynamically disordered tight-binding Hamiltonian with random modulations of both the diagonal and the off-diagonal matrix elements which are known to act in opposition. The dynamic disorder is treated exactly while the static disorder is incorporated approximately as an effective additional time-dependent disorder affecting the diffusive electron. Such a time translation of static disorder is known to manifest itself in certain limits as a renormalization of the diffusion coefficient. The calculated conductivity exhibits the Mooij correlation at high temperatures, where quantum coherence associated with the static disorder can be ignored.

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Hollow atoms in which the K shell is empty while the outer shells are populated allow studying a variety of important and unusual properties of atoms. The diagram x-ray emission lines of such atoms, the K-h alpha(1,2) hypersatellites (HSs), were measured for the 3d transition metals, Z=23-30, with a high energy resolution using photoexcitation by monochromatized synchrotron radiation. Good agreement with ab initio relativistic multiconfigurational Dirac-Fock calculations was found. The measured HS intensity variation with the excitation energy yields accurate values for the excitation thresholds, excludes contributions from shake-up processes, and indicates domination near threshold of a nonshake process. The Z variation of the HS shifts from the diagram line K alpha(1,2), the K-h alpha(1)-K-h alpha(2) splitting, and the K-h alpha(1)/K-h alpha(2) intensity ratio, derived from the measurements, are also discussed with a particular emphasis on the QED corrections and Breit interaction.

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The influence of stacking fault energy (SFE) on the mechanism of dynamic recrystallization (DRX) during hot deformation of FCC metals is examined in the light of results from the power dissipation maps. The DRX domain for high SFE metals like Al and Ni occurred at homologous temperature below 0·7 and strain rates of 0·001 s−1 while for low SFE metals like Cu and Pb the corresponding values are higher than 0·8 and 100 s−1. The peak efficiencies of power dissipation are 50% and below 40% respectively. A simple model which considers the rate of interface formation (nucleation) involving dislocation generation and simultaneous recovery and the rate of interface migration (growth) occurring with the reduction in interface energy as the driving force, has been proposed to account for the effect of SFE on DRX. The calculations reveal that in high SFE metals, interface migration controls DRX while the interface formation is the controlling factor in low SFE metals. In the latter case, the occurrence of flow softening and oscillations could be accounted for by this model.

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Solid state 1:1 complexes of divalent Mg, Ca, Sr and Ba with thiomalic acid(tma) have been isolated and characterised by elemental analysis, IR spectra and thermal studies. It is shown that tma coordinates to the metal ions through carboxylic oxygen atoms. Thermal studies of these complexes show that desulphurisation preceeds decarbonylation reaction leading to the formation of metal carbonates in all the cases except Mg where MgO is the end product. Thermal stability of the anhydrous thiomaltes follows the order Mg not, vert, similar Ca > Sr > Ba. Structures have been proposed based on the information obtained from these studies.

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Yhteenveto: Acinetobacter sp. metsäteollisuuden jätevesien biologisessa fosforinpoistossa

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X-ray absorption spectra at the oxygen K edge using the total yield technique are reported for YBa2Cu3O6.9 and YBa2Cu2.7Fe0.3O6.9. A comparison of the two spectra reveals that the mobile holes in YBa2Cu3O7-δ are removed and localized on Fe doping. Fe thus enters the lattice primarily in the formally trivalent oxidation state.

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Removal of impurity elements from hot metal is essential in basic oxygen steelmaking. Oxidation of phosphorus from hot metal has been studied by several authors since the early days of steelmaking. Influence of different parameters on the distribution of phosphorus, seen during the recent work of the authors, differs somewhat from that reported earlier. On the other hand, removal of sulphur during steelmaking has drawn much less attention. This may be due to the magnitude of desulphurisation in oxygen steelmaking being relatively low and desulphurisation during hot metal pre-treatment or in the ladle furnace offering better commercial viability Further, it is normally accepted that sulphur is removed to steelmaking slag in the form of sulphide only However, recent investigations have indicated that a significant amount of sulphur removed during basic oxygen steelmaking can exist in the form of sulphate in the slag under oxidising conditions. The distribution of sulphur during steelmaking becomes more important in the event of carry-over of sulphur-rich blast-furnace slag, which increases sulphur load in the BOF. The chemical nature of sulphur in this slag undergoes a gradual transition from sulphide to sulphate as the oxidative refining progresses.

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The potential to remove chromium(VI) from aqueous solutions through biosorption using coffee husk was investigated. The effects of pH, contact time, initial concentration and adsorbent dosage on the adsorption of Cr(VI) were studied. The data obeyed Langmuir and Freundlich adsorption isotherms. The Langmuir adsorption capacity was found to be 44.95 mg/g. The Freundlich constants K-f and n were 1.027 mg/g (litre/mg)(n)] and 1.493, respectively. Desorption studies indicated the removal of 60% of the hexavalent chromium. Infrared spectral studies revealed the presence of functional groups, such as hydroxyl and carboxyl groups, on the surface of the biomass, which facilitates biosorption of Cr(VI).

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With the advent of VLSI it has become possible to map parallel algorithms for compute-bound problems directly on silicon. Systolic architecture is very good candidate for VLSI implementation because of its regular and simple design, and regular communication pattern. In this paper, a systolic algorithm and corresponding systolic architecture, a linear systolic array, for the scanline-based hidden surface removal problem in three-dimensional computer graphics have been proposed. The algorithm is based on the concept of sample spans or intervals. The worst case time taken by the algorithm is O(n), n being the number of segments in a scanline. The time taken by the algorithm for a given scene depends on the scene itself, and on an average considerable improvement over the worst case behaviour is expected. A pipeline scheme for handling the I/O process has also been proposed which is suitable for VLSI implementation of the algorithm.

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Evidence is presented for the strong interaction of oxygen and nitrogen with solid films of buckminsterfullerene based on core-level spectroscopic studies. Cr, Ni and Cu deposited on C60 films interact strongly giving rise to large changes in the C(Is) and C(2p) binding energies as well as the (2p) binding energies of the transition metals.

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Tiivistelmä: Metallien ja fluorin pitoisuuksista ja määristä Kokemäenjoessa vuosina 1975—1977

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Improved performance of plasma in raw engine exhaust treatment is reported. A new type of reactor referred to as of cross-flow dielectric barrier discharge (DBD) was used, in which the gas flow is perpendicular to the corona electrode. In raw exhaust environment, the cross-flow (radial-flow) reactor exhibits a superior performance with regard to NOX removal when compared to that with axial flow of gas. Experiments were conducted at different flow rates ranging from 2 L/min to 25 L/min. The plasma assisted barrier discharge reactor has shown encouraging results in NOx removal at high flow rates.