Análise multielementar em peças de ouro antigo utilizando fluorescência de raios X por dispersão em energia

Os métodos de análise não destrutiva vêm sendo largamente empregados na área de Arqueometria. Estes métodos analisam artefatos históricos e obras de arte fornecendo informações da composição, das técnicas utilizadas e do local de manufatura da época. Assim, é possível fazer a datação, estabelecer a autenticidade e avaliar técnicas de conservação e restauração. A Fluorescência de Raios X por Dispersão de Energia (EDXRF) é um método que permite fazer análises quantitativas e qualitativas multielementares dos artefatos de forma não destrutiva. Neste estudo foram analisados artefatos compostos por ouro de diferentes épocas através da técnica de Fluorescência de Raios X por Dispersão em Energia (EDXRF). Dentre os artefatos, encontram-se brincos, pingentes, estatuetas e adornos de roupa cedidos pelo Instituto de Pesquisa Histórica e Arqueológica do Rio de Janeiro (IPHARJ). As análises foram realizadas através do sistema comercial ARTAX 200. Este sistema possui ânodo de Molibdênio. Foi utilizado um filtro de alumínio com 315 μm de espessura e foi operado em 40 kV, 250 μA com 300 s de aquisição. As concentrações de Cu, Au e Ag foram obtidas através da curva de calibração feita com padrões de ouro de 24k, 18k, 16k, 14k, 12k e 10k. Os resultados mostram que todas as peças contêm ligas metálicas e ouro em diferentes concentrações em sua composição. A partir das diferenças nas concentrações de ouro, foi possível classificar as peças quanto à pureza do ouro (quilatagem). Além disso, foi possível estimar a época em que estas peças foram manufaturadas a partir da comparação dos resultados encontrados com aqueles encontrados na literatura.

1.4 kV, 25 A, PT and NPT Trench IGBTs with optimum forward characteristics

In this paper we report the development of 1.4 kV 25 A PT and NPT Trench IGBTs with ultra-low on-resistance, latch-up free operation and highly superior overall performance when compared to previously reported DMOS IGBTs in the same class. We have fabricated both PT and transparent anode NPT devices to cover a wide range of applications which require very low on-state losses or very fast time with ultra-low switching losses. The minimum forward voltage drop at the standard current density of 100A/cm2 was 1.1 V for PT non-irradiated devices and 2.1 V for 16 MRad PT irradiated devices. The non-irradiated transparent emitter NPT structure has a typical forward voltage drop of 2.2 V, a turn-off time below 100 ns and turn-off energy losses of 11.2 mW/cm2 at 125 C. The maximum controllable current density was in excess of 1000A/cm2.

A novel heavily doped drift-auxiliary cathode lateral insulated gate transistor structure

A novel CMOS-compatible, heavily doped drift auxiliary cathode lateral insulated gate transistor (HDD-ACLIGT) structure is analyzed using two-dimensional device simulation techniques. Simulation results indicate that low on-resistance and a fast turn-off time of less than 50 ns can be achieved by incorporating an additional n+ region which is self-aligned to the gate between the p+ auxiliary cathode and the p well, together with an extended p buried layer in an anode-shorted modified lateral insulated gate transistor (MLIGT) structure. The on-state and its transient performance are analyzed in detail. The on-state performances of the HDD-ACLIGT and the MLIGT are compared and discussed. The results indicate that the HDD-ACLIGT structure is well suited for HVICs. The device is also well suited for integration with self-aligned digital CMOS.

Analytic model for turn off in the silicon-on-insulator LIGBT

Lateral insulated gate bipolar transistors (LIGBTs) in silicon-on-insulator (SOI) show a unique turn off characteristic when compared to junction-isolated RESURF LIGBTs or vertical IGBTs. The turn off characteristic shows an extended `terrace' where, after the initial fast transient characteristic of IGBTs due to the loss of the electron current, the current stays almost at the same value for an extended period of time, before suddenly dropping to zero. In this paper, we show that this terrace arises because there is a value of LIGBT current during switch off where the rate of expansion of the depletion region with respect to the anode current is infinite. Once this level of anode current is approached, the depletion region starts to expand very rapidly, and is only stopped when it reaches the n-type buffer layer surrounding the anode. Once this happens, the current rapidly drops to zero. A quasi-static analytic model is derived to explain this behaviour. The analytically modelled turn off characteristic agrees well with that found by numerical simulation.

Field emission site densities of nanostructured carbon

The field emission properties of nanostructured carbon films deposited by cathodic vacuum arc in a He atmosphere have been studied by measuring the emission currents and the emission site density. The films have an onset field of ∼ 3 V/μm. The emission site density is viewed on a phosphor anode and it increases rapidly with applied field. It is assumed that the emission occurs from surface regions with a range of field enhancement factors but with a constant work function. The field enhancement factor is found to have an exponential distribution.

Diffusion and chemical reaction in the porous structures of solid oxide fuel cells

The Rolls-Royce Integrated-Planar Solid Oxide Fuel Cell (IP-SOFC) consists of ceramic modules which have electrochemical cells printed on the outer surfaces. The cathodes are the outermost layer of each cell and are supplied with oxygen from air flowing over the outside of the module. The anodes are in direct contact with the ceramic structure and are supplied with fuel from internal gas channels. Natural gas is reformed into hydrogen for use by the fuel cells in a separate reformer module of similar design except that the fuel cells are replaced by a reforming catalyst layer. The performance of the modules is intrinsically linked to the behaviour of the gas flows within their porous structures. Because the porous layers are very thin, a one-dimensional flow model provides a good representation of the flow property variations between fuel channel and fuel cell or reforming catalyst. The multi-component convective-diffusive flows are simulated using a new theory of flow in porous material, the Cylindrical Pore Interpolation Model. The effects of the catalysed methane reforming and water-gas shift chemical reactions are also considered using appropriate kinetic models. It is found that the shift reaction, which is catalysed by the anode material, has certain beneficial effects on the fuel cell module performance. In the reformer module it was found that the flow resistance of the porous support structure makes it difficult to sustain a high methane conversion rate. Although the analysis is based on IP-SOFC geometry, the modelling approach and general conclusions are applicable to other types of SOFC.

Physical modelling of large area 4H-SiC PiN diodes

The recent developments in SiC PiN diode research mean that physics-based models that allow accurate, rapid prediction of switching and conduction performance and resulting converter losses will soon be required. This is especially the case given the potential for very high voltage converters to be used for enabling distributed and renewable power generation. In this work an electro-thermal compact model of a 4.5 kV silicon carbide PiN diode has been developed for converter loss modelling in Simulink. Good matching of reverse recovery has been achieved between 25 and 200 °C. The I-V characteristics of the P+ anode contact have been shown to be significant in obtaining good matching for the forward characteristics of the diode, requiring further modelling work in this area. © 2009 IEEE.

Cathodic protection of aluminium sheathed wooden fishing boats with ternary aluminium anodes

Results of laboratory and field trials on cathodic protection of aluminium sheathing in fishing boats by ternary aluminium anodes are presented. The high negative potential of 1.06 V with respect to saturated calomel electrode, its appreciably low anodic polarization and high current output are favourable factors for using the ternary aluminium anodes. The low rate of consumption of the anode material under service trials attests its economic viability.

Plasma enhancement of current from carbon cathodes for field emission displays

This paper examines the possibility of using a background gas medium to enhance the current available from low threshold carbon cathodes. The field emission current is used to initiate a plasma in the gas medium, and thereby achieve a current multiplication effect. Results on the variation of anode current as a function of electric field and gas pressure are presented. These are compared with model calculations to verify the principles of operation. The influence of ion bombardment on the long term performance thin film carbon cathodes is examined for He and Ar multiplication plasmas. A measure of the influence of current multiplication on display quality is presented by examining light output from two standard low voltage phosphors. Also studied are the influence of doping the carbon with N to lower the threshold voltage for emission as well as the consequent impact on anode current from the plasma.

Efficient field emission from triode-type 1D arrays of carbon nanotubes.

Carbon nanotube (CNT) emitters were formed on line-patterned cathodes in microtrenches through a thermal CVD process. Single-walled carbon nanotubes (SWCNTs) self-organized along the trench lines with a submicron inter-CNT spacing. Excellent field emission (FE) properties were obtained: current densities at the anode (J(a)) of 1 microA cm(-2), 10 mA cm(-2) and 100 mA cm(-2) were recorded at gate voltages (V(g)) of 16, 25 and 36 V, respectively. The required voltage difference to gain a 1:10 000 contrast of the anode current was as low as 9 V, indicating that a very low operating voltage is possible for these devices. Not only a large number of emission sites but also the optimal combination of trench structure and emitter morphology are crucial to achieve the full FE potential of thin CNTs with a practical lifetime. The FE properties of 1D arrays of CNT emitters and their optimal design are discussed. Self-organization of thin CNTs is an attractive prospect to tailor preferable emitter designs in FE devices.

Field emission properties of single-walled carbon nanotubes with a variety of emitter morphologies

Field emission properties of single-walled carbon nanotubes (SWCNTs), which were prepared through alcohol catalytic chemical vapor deposition for 10-60s, were characterized in a diode configuration. Protrusive bundles at the top surface of samples act selectively as emission sites. The number of emission sites was controlled by emitter morphologies combined with texturing of Si substrates. SWCNTs grown on a textured Si substrate exhibited a turn-on field as low as 2.4 V/μm at a field emission current density of 1 μA/cm 2. Uniform spatial luminescence (0.5 cm2) from the rear surface of the anode was revealed for SWCNTs prepared on the textured Si substrate. Deterioration of field emission properties through repetitive measurements was reduced for the textured samples in comparison with vertically aligned SWCNTs and a random network of SWCNTs prepared on flat Si substrates. Emitter morphology resulting in improved field emission properties is a crucial factor for the fabrication of SWCNT-electron sources. Morphologically controlled SWCNTs with promising emitter performance are expected to be practical electron sources. © 2008 The Japan Society of Applied Physics.

Thyristors

Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type material (i.e. three p-n junctions) comprising its main power handling section. In contrast to the linear relation which exists between load and control currents in a transistor, the thyristor is bistable. The control terminal of the thyristor, called the gate (G) electrode, may be connected to an integrated and complex structure as a part of the device. Thyristors are used to approximate ideal closed (no voltage drop between anode and cathode) or open (no anode current flow) switches for control of power flow in a circuit. This differs from low-level digital switching circuits that are designed to deliver two distinct small voltage levels while conducting small currents (ideally zero). Thyristor circuits must have the capability of delivering large currents and be able to withstand large externally applied voltages. All thyristor types are controllable in switching from a forward-lockingstate (positive potential applied to the anode with respect to the cathode, with correspondingly little anode current flow) into a forward-conduction state (large forward anode current flowing, with a small anode-cathode potential drop). Most thyristors have the characteristic that after switching from a forward-blocking state into the forward-conduction state, the gate signal can be removed and the thyristor will remain in its forward-conduction mode. This property is termed "latching" and is an important distinction between thyristors and other types of power electronic devices. © 2007 Elsevier Inc. All rights reserved.

Hierarchically structured nanocarbon electrodes for flexible solid lithium batteries

The ever increasing demand for storage of electrical energy in portable electronic devices and electric vehicles is driving technological improvements in rechargeable batteries. Lithium (Li) batteries have many advantages over other rechargeable battery technologies, including high specific energy and energy density, operation over a wide range of temperatures (-40 to 70. °C) and a low self-discharge rate, which translates into a long shelf-life (~10 years) [1]. However, upon release of the first generation of rechargeable Li batteries, explosions related to the shorting of the circuit through Li dendrites bridging the anode and cathode were observed. As a result, Li metal batteries today are generally relegated to non-rechargeable primary battery applications, because the dendritic growth of Li is associated with the charging and discharging process. However, there still remain significant advantages in realizing rechargeable secondary batteries based on Li metal anodes because they possess superior electrical conductivity, higher specific energy and lower heat generation due to lower internal resistance. One of the most practical solutions is to use a solid polymer electrolyte to act as a physical barrier against dendrite growth. This may enable the use of Li metal once again in rechargeable secondary batteries [2]. Here we report a flexible and solid Li battery using a polymer electrolyte with a hierarchical and highly porous nanocarbon electrode comprising aligned multiwalled carbon nanotubes (CNTs) and carbon nanohorns (CNHs). Electrodes with high specific surface area are realized through the combination of CNHs with CNTs and provide a significant performance enhancement to the solid Li battery performance. © 2013 Elsevier Ltd.

The effect of incomplete ionization on the turn-off behavior of FS IGBTs

This letter demonstrates for the first time the effect of the incomplete ionization (I.I.) of the transparent p-anode layer on the static and dynamic characteristics of the field-stop insulated gate bipolar transistors (FS IGBTs). This effect needs to be considered in FS IGBTs TCAD modeling to match accurately the device characteristics across a wide range of temperatures. The acceptor ionization energy (EA) governing the I.I. mechanism for the p-anode is extracted via matching the experimental turn-off waveforms and the static performance with Medici simulator. © 1980-2012 IEEE.

800V lateral IGBT in bulk Si for low power compact SMPS applications

An 800V rated lateral IGBT for high frequency, low-cost off-line applications has been developed. The LIGBT features a new method of adjusting the bipolar gain, based on a floating N+ stripe in front of the P+ anode/drain region. The floating N+ layer enhances the carrier recombination at the anode/drain side of the drift region resulting in a very significant decrease in the turn-off speed and substantially lower overall losses. Switching speeds as low as 140ns at 25oC and 300ns at 125oC have been achieved with corresponding equivalent Rdson at 125oC below 90mω.cm2. A fully operational AC-DC converter using a controller with an integrated LIGBT+depletion mode MOSFET chip has been designed and qualified in plastic SOP8 packages and used in 5W, 65kHz SMPS applications. The device is fabricated in 0.6μm bulk silicon CMOS technology without any additional masking steps. © 2013 IEEE.