Novel Transmit Precoding Methods for Rayleigh Fading Multiuser TDD-MIMO Systems With CSIT and No CSIR

In this paper, we present novel precoding methods for multiuser Rayleigh fading multiple-input-multiple-output (MIMO) systems when channel state information (CSI) is available at the transmitter (CSIT) but not at the receiver (CSIR). Such a scenario is relevant, for example, in time-division duplex (TDD) MIMO communications, where, due to channel reciprocity, CSIT can be directly acquired by sending a training sequence from the receiver to the transmitter(s). We propose three transmit precoding schemes that convert the fading MIMO channel into a fixed-gain additive white Gaussian noise (AWGN) channel while satisfying an average power constraint. We also extend one of the precoding schemes to the multiuser Rayleigh fading multiple-access channel (MAC), broadcast channel (BC), and interference channel (IC). The proposed schemes convert the fading MIMO channel into fixed-gain parallel AWGN channels in all three cases. Hence, they achieve an infinite diversity order, which is in sharp contrast to schemes based on perfect CSIR and no CSIT, which, at best, achieve a finite diversity order. Further, we show that a polynomial diversity order is retained, even in the presence of channel estimation errors at the transmitter. Monte Carlo simulations illustrate the bit error rate (BER) performance obtainable from the proposed precoding scheme compared with existing transmit precoding schemes.

ADAPTATION OF MW LEVEL NATURAL GAS LEAN BURN ENGINE FOR PRODUCER GAS OPERATION A GRID CONNECTED POWER PLANT

Availability of producer gas engines at MW being limited necessitates to adapt engine from natural gas operation. The present work focus on the development of necessary kit for adapting a 12 cylinder lean burn turbo-charged natural gas engine rated at 900 kWe (Waukesha make VHP5904LTD) to operate on producer and set up an appropriate capacity biomass gasification system for grid linked power generation in Thailand. The overall plant configuration had fuel processing, drying, reactor, cooling and cleaning system, water treatment, engine generator and power evacuation. The overall project is designed for evacuation of 1.5 MWe power to the state grid and had 2 gasification system with the above configuration and 3 engines. Two gasification system each designed for about 1100 kg/hr of woody biomass was connected to the engine using a producer gas carburetor for the necessary Air to fuel ratio control. In the use of PG to fuel IC engines, it has been recognized that the engine response will differ as compared to the response with conventional fueled operation due to the differences in the thermo-physical properties of PG. On fuelling a conventional engine with PG, power de-rating can be expected due to the lower calorific value (LCV), lower adiabatic flame temperature (AFT) and the lower than unity product to reactant more ratio. Further the A/F ratio for producer gas is about 1/10th that of natural gas and requires a different carburetor for engine operation. The research involved in developing a carburetor for varying load conditions. The patented carburetor is based on area ratio control, consisting of a zero pressure regulator and a separate gas and air line along with a mixing zone. The 95 litre engine at 1000 rpm has an electrical efficiency of 33.5 % with a heat input of 2.62 MW. Each engine had two carburetors designed for producer gas flow each capable of handling about 1200 m3/hr in order to provide similar engine heat input at a lower conversion efficiency. Cold flow studies simulating the engine carburetion system results showed that the A/F was maintained in the range of 1.3 +/- 0.1 over the entire flow range. Initially, the gasification system was tested using woody biomass and the gas composition was found to be CO 15 +/- 1.5 % H-2 22 +/- 2% CH4 2.2 +/- 0.5 CO2 11.25 +/- 1.4 % and rest N-2, with the calorific value in the range of 5.0 MJ/kg. After initial trials on the engine to fine tune the control system and adjust various engine operating parameter a peak load of 800 kWe was achieved, while a stable operating conditions was found to be at 750 kWe which is nearly 85 % of the natural gas rating. The specific fuel consumption was found to be 0.9 kg of biomass per kWh.

Correlation of microstructure and creep behaviour of MRI230D Mg alloy developed by two different casting technologies

The relationship between the as-cast microstructure and creep behaviour of the heat-resistant MRI230D Mg alloy produced by two different casting technologies is investigated. The alloy in both ingot-casting (IC) and high pressure die-casting (HPDC) conditions consists of alpha-Mg, 06 ((Mg,AI)(2)Ca), Al-Mn and Sn-Mg-Ca rich phases. However, the HPDC alloy resulted in relatively finer grain size and higher volume fraction of finer, denser network of eutectic C36 phase in the as-cast microstructure as compared to that of the IC alloy. The superior creep resistance exhibited by the HPDC alloy at all the stress levels and temperatures employed in the present investigation was attributed to the more effective dispersion strengthening effect caused by the presence of finer and denser network of the C36 phase. The increased amount of the eutectic C36 phase was the only change observed in the microstructures of both alloys following creep tests. (C) 2015 Elsevier B.V. All rights reserved.

On the variability in fracture toughness of `ductile' bulk metallic glasses

The mode I fracture toughness, K-Ic, of ductile bulk metallic glasses (BMGs) exhibits a high degree of specimen-to-specimen variability. By conducting fracture experiments in modes I and II, we demonstrate that the observed high variability in mode I, vis-a-vis mode II, is a result of highly variable propensity for the conversion of shear bands into cracks in mode I whereas in mode II, crack growth direction is fixed. Thus, the measured variability in K-Ic is intrinsic to the nature of BMGs. (C) 2015 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Outer Bounds on the Sum Rate of the K-User MIMO Gaussian Interference Channel

This paper derives outer bounds on the sum rate of the K-user MIMO Gaussian interference channel (GIC). Three outer bounds are derived, under different assumptions of cooperation and providing side information to receivers. The novelty in the derivation lies in the careful selection of side information, which results in the cancellation of the negative differential entropy terms containing signal components, leading to a tractable outer bound. The overall outer bound is obtained by taking the minimum of the three outer bounds. The derived bounds are simplified for the MIMO Gaussian symmetric IC to obtain outer bounds on the generalized degrees of freedom (GDOF). The relative performance of the bounds yields insight into the performance limits of multiuser MIMO GICs and the relative merits of different schemes for interference management. These insights are confirmed by establishing the optimality of the bounds in specific cases using an inner bound on the GDOF derived by the authors in a previous work. It is also shown that many of the existing results on the GDOF of the GIC can be obtained as special cases of the bounds, e. g., by setting K = 2 or the number of antennas at each user to 1.

High-Performance Stacked TiO2-ZrO2 and Si-doped ZrO2 Metal-Insulator-Metal Capacitors

Metal-insulator-metal (MIM) capacitors for DRAM applications have been realised using stacked TiO2-ZrO2 (TiO2/ZrO2 and ZrO2/TiO2) and Si-doped ZrO2 (TiO2/Si-doped ZrO2) dielectrics. High capacitance densities (> 42 fF/mu m(2)), low leakage current densities (< 5 x 10(-7) A/cm(2) at -1 V), and sub-nm EOT (< 0.8 nm) have been achieved. The effects of constant voltage stress on the device characteristics is studied. The structural analysis of the samples is performed by X-ray diffraction measurements, and this is correlated to the electrical characteristics of the devices. The surface chemical states of the films are analyzed through X-ray photoelectron spectroscopy measurements. The doped-dielectric stack (TiO2/Si-doped ZrO2) helps to reduce leakage current density and improve reliability, with a marginal reduction in capacitance density; compared to their undoped counterparts (TiO2/ZrO2 and ZrO2/TiO2). We compare the device performance of the fabricated capacitors with other stacked high-k MIM capacitors reported in recent literature.

Coupling geomorphology parameters with lithology for micro-level groundwater resource assessment: a case study from semi-arid hard rock terrain in Tamil Nadu, India

The standard procedure of groundwater resource estimation in India till date is based on the specific yield parameters of each rock type (lithology) derived through pumping test analysis. Using the change in groundwater level, specific yield, and area of influence, groundwater storage change could be estimated. However, terrain conditions in the form of geomorphological variations have an important bearing on the net groundwater recharge. In this study, an attempt was made to use both lithology and geomorphology as input variables to estimate the recharge from different sources in each lithology unit influenced by the geomorphic conditions (lith-geom), season wise separately. The study provided a methodological approach for an evaluation of groundwater in a semi-arid hard rock terrain in Tirunelveli, Tamil Nadu, India. While characterizing the gneissic rock, it was found that the geomorphologic variations in the gneissic rock due to weathering and deposition behaved differently with respect to aquifer recharge. The three different geomorphic units identified in gneissic rock (pediplain shallow weathered (PPS), pediplain moderate weathered (PPM), and buried pediplain moderate (BPM)) showed a significant variation in recharge conditions among themselves. It was found from the study that Peninsular gneiss gives a net recharge value of 0.13 m/year/unit area when considered as a single unit w.r.t. lithology, whereas the same area considered with lith-geom classes gives recharge values between 0.1 and 0.41 m/year presenting a different assessment. It is also found from this study that the stage of development (SOD) for each lith-geom unit in Peninsular gneiss varies from 168 to 230 %, whereas the SOD is 223 % for the lithology as a single unit.

In-situ study of microscale fracture of diffusion aluminide bond coats: Effect of platinum

The influence of Pt layer thickness on the fracture behavior of PtNiAl bond coats was studied in situ using clamped micro-beam bend tests inside a scanning electron microscope (SEM). Clamped beam bending is a fairly well established micro-scale fracture test geometry that has been previously used in determination of fracture toughness of Si and PtNiAl bond coats. The increasing amount of Pt in the bond coat matrix was accompanied by several other microstructural changes such as an increase in the volume fraction of alpha-Cr precipitate particles in the coating as well as a marginal decrease in the grain size of the matrix. In addition, Pt alters the defect chemistry of the B2-NiAl structure, directly affecting its elastic properties. A strong correlation was found between the fracture toughness and the initial Pt layer thickness associated with the bond coat. As the Pt layer thickness was increased from 0 to 5 mu m, resulting in increasing Pt concentration from 0 to 14.2 at.% in the B2-NiAl matrix and changing alpha-Cr precipitate fraction, the initiation fracture toughness (K-IC) was seen to rise from 6.4 to 8.5 MPa.m(1/2). R-curve behavior was observed in these coatings, with K-IC doubling for a crack propagation length of 2.5 mu m. The reasons for the toughening are analyzed to be a combination of material's microstructure (crack kinking and bridging due to the precipitates) as well as size effects, as the crack approaches closer to the free surface in a micro-scale sample.

On the Gaussian Many-to-One X Channel

In this paper, the Gaussian many-to-one X channel (XC), which is a special case of general multiuser XC, is studied. In the Gaussian many-to-one XC, communication links exist between all transmitters and one of the receivers, along with a communication link between each transmitter and its corresponding receiver. As per the XC assumption, transmission of messages is allowed on all the links of the channel. This communication model is different from the corresponding manyto- one interference channel (IC). Transmission strategies, which involve using Gaussian codebooks and treating interference from a subset of transmitters as noise, are formulated for the above channel. Sum-rate is used as the criterion of optimality for evaluating the strategies. Initially, a 3 x 3 many-to-one XC is considered and three transmission strategies are analyzed. The first two strategies are shown to achieve sum-rate capacity under certain channel conditions. For the third strategy, a sum-rate outer bound is derived and the gap between the outer bound and the achieved rate is characterized. These results are later extended to the K x K case. Next, a region in which the many-to-one XC can be operated as a many-to-one IC without the loss of sum-rate is identified. Furthermore, in the above region, it is shown that using Gaussian codebooks and treating interference as noise achieve a rate point that is within K/2 -1 bits from the sum-rate capacity. Subsequently, some implications of the above results to the Gaussian many-to-one IC are discussed. Transmission strategies for the many-to-one IC are formulated, and channel conditions under which the strategies achieve sum-rate capacity are obtained. A region where the sum-rate capacity can be characterized to within K/2 -1 bits is also identified. Finally, the regions where the derived channel conditions are satisfied for each strategy are illustrated for a 3 x 3 many-to-one XC and the corresponding many-to-one IC.

Dielectric investigation of high-k yttrium copper titanate thin films

We report on the first dielectric investigation of high-k yttrium copper titanate thin films, which were demonstrated to be very promising for nanoelectronics applications. The dielectric constant of these films is found to vary from 100 down to 24 (at 100 kHz) as a function of deposition conditions, namely oxygen pressure and film thickness. The physical origin of such variation was investigated in the framework of universal dielectric response and Cole-Cole relations and by means of voltage dependence studies of the dielectric constant. Surface-related effects and charge hopping polarization processes, strictly dependent on the film microstructure, are suggested to be mainly responsible for the observed dielectric response. In particular, the bulky behaviour of thick films deposited at lower oxygen pressure evolves towards a more complex and electrically heterogeneous structure when either the thickness decreases down to 50 nm or the films are grown under high oxygen pressure.

Dielectric investigation of high-k yttrium copper titanate thin films

We report on the first dielectric investigation of high-k yttrium copper titanate thin films, which were demonstrated to be very promising for nanoelectronics applications. The dielectric constant of these films is found to vary from 100 down to 24 (at 100 kHz) as a function of deposition conditions, namely oxygen pressure and film thickness. The physical origin of such variation was investigated in the framework of universal dielectric response and Cole-Cole relations and by means of voltage dependence studies of the dielectric constant. Surface-related effects and charge hopping polarization processes, strictly dependent on the film microstructure, are suggested to be mainly responsible for the observed dielectric response. In particular, the bulky behaviour of thick films deposited at lower oxygen pressure evolves towards a more complex and electrically heterogeneous structure when either the thickness decreases down to 50 nm or the films are grown under high oxygen pressure.

High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining

This paper reports the fabrication and electrical characterization of high tuning range AlSi RF MEMS capacitors. We present experimental results obtained by a surface micromachining process that uses dry etching of sacrificial amorphous silicon to release Al-1%Si membranes and has a low thermal budget (<450 °C) being compatible with CMOS post-processing. The proposed silicon sacrificial layer dry etching (SSLDE) process is able to provide very high Si etch rates (3-15 μm/min, depending on process parameters) with high Si: SiO2 selectivity (>10,000:1). Single- and double-air-gap MEMS capacitors, as well as some dedicated test structures needed to calibrate the electro-mechanical parameters and explore the reliability of the proposed technology, have been fabricated with the new process. S-parameter measurements from 100 MHz up to 2 GHz have shown a capacitance tuning range higher than 100% with the double-air-gap architecture. The tuning range can be enlarged with a proper DC electrical bias of the capacitor electrodes. Finally, the reported results make the proposed MEMS tuneable capacitor a good candidate for above-IC integration in communications applications. © 2004 Elsevier B.V. All rights reserved.

Fabrication and properties of TBCCO films via air-atomising spray deposition of thallium-free precursors

The high-field properties of polycrystalline superconducting TlBaCaCuO films fabricated by the incorporation of thallium vapour into air-atomised BaCaCuO precursors are described. Thick films with Tc values in the range 106-111 K have been prepared on polycrystalline yttria-stabilised zirconia substrates. The surface morphology, crystal structure and composition of the films are related to their high-field transport and magnetisation properties. Typical 10 mm × 9 mm films show Jc values > 1×104 A/cm2 at 77 K (0 T). The best film has a Jc=1.3×104 A/cm2 (Ic=3.6 A) at 77 K (0 T). Films prepared on 26 mm×9 mm substrates show typical large-area Jc values > 0.5×104 A/cm2 (77 K, 0 T). A square planar specimen of dimensions 4.3 mm ×4.3 mm exhibited magnetisation Jc values=1.2×105 A/cm2 at 4.2 K (0.1 T), 9.3×104 A/cm2 at 10 K (0.1 T), 3.3×104 A/ cm2 at 4 K (8 T), and 1.6×104 A/cm2 at 10 K (8 T). © 1994.