Leisure time behaviors: Prevalence, correlates and associations with overweight in Brazilian adults. A cross-sectional analysis

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Theoretical analysis of the structural deformation in Mn-doped BaTiO3

An alternative theoretical method to simulate the structural deformation induced by Mn-doping in BaTiO3 is proposed. The periodic quantum-mechanical method is based on density functional theory at B3LYP level. The structural models were obtained from Rietveld refinement of the undoped and Mn doped BaTiO3 X-ray diffraction data. This modelization gives access to the dopant General effect on the electronic structure. In fact, the influence of the doing element itself on the electronic configuration is barely local: therefore, it is not included in the simulation. The simplicity of the model makes it available for working within a wide range of materials.(C) 2004 Published bv Elsevier B.V.

Effect of Ta2O5 doping on the electrical properties of 0.99SnO(2)center dot 0.01CoO ceramic

The effect of Ta2O5 doping in 0.99SnO(2). 0.01CoO on the microstructure and electrical properties of this ceramic were analyzed in this study. The grain size was found to decrease from 6.87 mu m to 5.68 mu m when the Ta2O5 concentration increased from 0.050 to 0.075 mol%. DC electrical characterization showed a dramatic increase in the current loss and decrease in the non-linear coefficient with the increase of the Ta2O5 concentration. The conduction mechanism is by thermionic emission and the potential barriers are of Schottky type, separated by a thin film. (C) 2000 Kluwer Academic Publishers.

EXAFS investigation on Sb incorporation effects to electrical transport in SnO2 thin films deposited by sot-gel

The effect of Sb doping in SnO2 thin films prepared by the sol-gel dip-coating (SGDC) process is investigated. Electronic and structural properties are evaluated through synchrotron radiation measurements by EXAFS and XANES. These data indicate that antimony is in the oxidation state W, and replaces tin atoms (Sn4+), at a grain surface site. Although the substitution yields net free carrier concentration, the electrical conductivity is increased only slightly, because it is reduced by the high grain boundary scattering. The overall picture leads to a shortening of the grain boundary potential, where oxygen vacancies compensate for oxygen adsorbed species, decreasing the trapped charge at grain boundary. (c) 2007 Elsevier Ltd. All rights reserved.