929 resultados para Defect removal efficiency


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Red mud is a waste by-product generated during the processing of bauxite, the most common ore of aluminium. With the presence of ferric oxide, high surface area, resistance to poisoning and low cost, red mud made itself a good alternative to the existing commercial automobile catalyst. The cascading of dielectric barrier discharge plasma with red mud improved the NOX removal from diesel engine exhaust significantly. The DeNO(X) efficiency with discharge plasma was 74% and that with red mud was 31%. The efficiency increased to 92% when plasma was cascaded with red mud catalyst operating at a temperature of 400 degrees C. The NOX removal was dominated by NO2 removal. The studies were conducted at different temperatures and the results were discussed.

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With ever more stringent NOX emissions, it is necessary to examine removal of nitrogen oxide from diesel engine exhaust. This paper describes the study of NOX reduction from 5.9-kW stationary diesel engine exhaust under nanosecond pulse energization. Two plasma reactors characterized by dielectric barrier discharge has been designed, built, and evaluated. One of the reactor designs include nine numbers of electrodes kept in parallel, and the exhaust was allowed to pass axially, whereas the second reactor consists of nine parallel electrodes and the exhaust was allowed to pass radially. The reactors were individually tested for the treatment of nitrogen oxides for gas flow rate of 2, 5, and 10 L/min. Both the reactors have been individually tested, and results show an appreciable removal of NOX with equal discharge volume. From the results, it was found that both the reactors were an efficient NOX removal. With consumption of only 36 J/L, the reactors had shown a considerable 45% DeNO(X) efficiency.

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We show that the removal of angular momentum is possible in the presence of large-scale magnetic stresses in geometrically thick, advective, sub-Keplerian accretion flows around black holes in steady state, in the complete absence of alpha-viscosity. The efficiency of such an angular momentum transfer could be equivalent to that of alpha-viscosity with alpha = 0.01-0.08. Nevertheless, the required field is well below its equipartition value, leading to a magnetically stable disk flow. This is essentially important in order to describe the hard spectral state of the sources when the flow is non/sub-Keplerian. We show in our simpler 1.5 dimensional, vertically averaged disk model that the larger the vertical-gradient of the azimuthal component of the magnetic field is, the stronger the rate of angular momentum transfer becomes, which in turn may lead to a faster rate of outflowing matter. Finding efficient angular momentum transfer in black hole disks via magnetic stresses alone, is very interesting when the generic origin of alpha-viscosity is still being explored.

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While photovoltaics hold much promise as a sustainable electricity source, continued cost reduction is necessary to continue the current growth in deployment. A promising path to continuing to reduce total system cost is by increasing device efficiency. This thesis explores several silicon-based photovoltaic technologies with the potential to reach high power conversion efficiencies. Silicon microwire arrays, formed by joining millions of micron diameter wires together, were developed as a low cost, low efficiency solar technology. The feasibility of transitioning this to a high efficiency technology was explored. In order to achieve high efficiency, high quality silicon material must be used. Lifetimes and diffusion lengths in these wires were measured and the action of various surface passivation treatments studied. While long lifetimes were not achieved, strong inversion at the silicon / hydrofluoric acid interface was measured, which is important for understanding a common measurement used in solar materials characterization.

Cryogenic deep reactive ion etching was then explored as a method for fabricating high quality wires and improved lifetimes were measured. As another way to reach high efficiency, growth of silicon-germanium alloy wires was explored as a substrate for a III-V on Si tandem device. Patterned arrays of wires with up to 12% germanium incorporation were grown. This alloy is more closely lattice matched to GaP than silicon and allows for improvements in III-V integration on silicon.

Heterojunctions of silicon are another promising path towards achieving high efficiency devices. The GaP/Si heterointerface and properties of GaP grown on silicon were studied. Additionally, a substrate removal process was developed which allows the formation of high quality free standing GaP films and has wide applications in the field of optics.

Finally, the effect of defects at the interface of the amorphous silicon heterojuction cell was studied. Excellent voltages, and thus efficiencies, are achievable with this system, but the voltage is very sensitive to growth conditions. We directly measured lateral transport lengths at the heterointerface on the order of tens to hundreds of microns, which allows carriers to travel towards any defects that are present and recombine. This measurement adds to the understanding of these types of high efficiency devices and may aid in future device design.

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Two solar cells based on an InGaN/GaN p-i-n hetero-junction, but having different dislocation densities, were fabricated and characterized. The structures were grown on c-plane (0001) GaN-on-sapphire templates with different threading dislocation (TD) densities of 5×108 and 5×109 cm-2. Structural characterization revealed the presence of V-defects in the InGaN epilayer. Since each V-defect was associated with a TD, the structural as well as the optical properties worsened with a higher TD density in the GaN/sapphire template. It was also found that additional dislocations were generated in the p-GaN layer over the V-defects in the InGaN layer. Because of its superior structural quality, the peak external quantum efficiency (EQE) of the low TD density sample was three times higher than that of the high TD density sample. © 2013 Elsevier B.V.

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The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures has attracted great interest because Si wafers are readily available in large diameter at low cost. In addition, such wafers are compatible with existing processing lines for the 6-inch and larger wafer sizes commonly used in the electronics industry. With the development of various methods to avoid wafer cracking and reduce the defect density, the performance of GaN-based LED and electronic devices has been greatly improved. In this paper, we review our methods of growing crack-free InGaN-GaN multiple quantum well (MQW) LED structures of high crystalline quality on Si(111) substrates. The performance of processed LED devices and its dependence on the threading dislocation density were studied. Full wafer-level LED processing using a conventional 6-inch III-V processing line is also presented, demonstrating the great advantage of using large-size Si substrates for mass production of GaN LED devices.

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Micronutrients play a very important role in biological processes for wastewater treatment. Many industrial wastewaters lack in nutrients (macronutrients and micronutrients) required for microbial growth, and this is one of the main problems at many activated sludge plants treating industrial wastewater. The microbial community structure is one of the important factors controlling the pollutant-degrading capacity of biological wastewater treatment system. In this study, the concentrations of micronutrients of the textile wastewater discharged from a textile plant were determined, and the effects of micronutrients on treatment efficiency and microorganism community structure of the biological treatment system were studied. The results showed that the optimal concentrations of magnesium, molybdenum, zinc, thiamine and niacin in the textile wastewater were 5.0, 2.0, 1.0, 1.0 and 1.0mg/L, respectively. The COD removal rates when magnesium, molybdenum, zinc, thiamine and niacin were added individually to the wastewater in their optimal concentrations were 1.8, 1.4, 1.3, 1.6 and 2.2 times of that of the control, respectively. The improving effects of combinations of zinc and thiamine, zinc and niacin, thiamine and niacin were better than single micronutrient. The diversity of quinones (DQ) changed significantly after the micronutrient was added into the wastewater treatment system. This indicated that there was probably a feasibility of optimizing the biological treatment performances and microorganism community structure of textile wastewater treatment system through micronutrient supplement.

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We present fabrication and experimental measurement of a series of photonic crystal waveguides. The complete devices consist of an injector taper down from 3 mu m into a triangular-lattice air-hole single-line-defect waveguide with lattice constant from 410nm to 470nm and normalized radius 0.31. We fabricate these devices on a siliconon-insulator substrate and characterize them using a tunable laser source over a wavelength range from 1510nm to 1640nm. A sharp attenuation at photonic crystal waveguide mode edge is observed for most structures. The edge of guided band is shifted about 30nm with the 10nm increase of the lattice constant. We obtain high-efficiency light propagation and broad flat spectrum response of the photonic crystal waveguides.

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Polyfluorene (PF) is a class of typical blue electroluminescent (EL) material, but it exhibits undesired feature in the green spectral region under operation condition. We investigated the spectral properties of different device structures of poly(9,9-dioctylfluorene) (PFO)-based light-emitting diodes, and found that the interaction between cathode and PFO is the main origination of green emission in EL devices. The general method of inserting a buffer layer between the PFO and cathode can decrease the low energy band emission to purify the color and improve the EL performance of devices.

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The mixed oxide La2CuO4 was synthesized by four different methods and characterized with XRD, BET, TEM and low angle XRD. The effect of the synthetic method on the crystal structure, crystal size, surface area and catalytic activity to NO - CO reaction were studied. The results showed that the samples derived from different methods exhibited different activity to NO-CO reaction, the reason may be that the concentration and type of oxygen defect were different when the synthetic methods were different.

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Removal of NO by a continuous microwave discharge at atmospheric pressure with the addition of CH4 is reported. The conversion of NO to N-2 is approximately 80%, and the energy efficiency is up to 0.55 g-NO/kWh. The effects of CH4 addition and three discharge modes on NO conversion and energy efficiency are investigated. The dependence of NO conversion on experimental time is also observed.

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Biogas is a mixture of methane and other gases. In its crude state, it contains carbon dioxide (CO2) that reduces its energy efficiency and hydrogen sulfide (H2S) that is toxic and highly corrosive. Because chemical methods of removal are expensive and environmentally hazardous, this project investigated an algal-based system to remove CO2 from biogas. An anaerobic digester was used to mimic landfill biogas. Iron oxide and an alkaline spray were used to remove H2S and CO2 respectively. The CO2-laden alkali solution was added to a helical photobioreactor where the algae metabolized the dissolved CO2 to generate algal biomass. Although technical issues prevented testing of the complete system for functionality, cost analysis was completed and showed that the system, in its current state, is not economically feasible. However, modifications may reduce operation costs.

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The semiconductor alloy indium gallium nitride (InxGa1-xN) offers substantial potential in the development of high-efficiency multi-junction photovoltaic devices due to its wide range of direct band gaps, strong absorption and other optoelectronic properties. This work uses a variety of characterization techniques to examine the properties of InxGa1-xN thin films deposited in a range of compositions by a novel plasma-enhanced evaporation deposition system. Due to the high vapour pressure and low dissociation temperature of indium, the indium incorporation and, ultimately, control of the InxGa1-xN composition was found to be influenced to a greater degree by deposition temperature than variations in the In:Ga source rates in the investigated region of deposition condition space. Under specific deposition conditions, crystalline films were grown in an advantageous nano-columnar microstructure with deposition temperature influencing column size and density. The InxGa1-xN films were determined to have very strong absorption coefficients with band gaps indirectly related to indium content. However, the films also suffer from compositional inhomogeneity and In-related defect complexes with strong phonon coupling that dominates the emission mechanism. This, in addition to the presence of metal impurities, harms the alloy’s electronic properties as no significant photoresponse was observed. This research has demonstrated the material properties that make the InxGa1-xN alloy attractive for multi-junction solar cells and the benefits/drawbacks of the plasma-enhanced evaporation deposition system. Future work is needed to overcome significant challenges relating to crystalline quality, compositional homogeneity and the optoelectronic properties of In-rich InxGa1-xN films in order to develop high-performance photovoltaic devices.

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Mesenchymal stem cells (MSCs) were demonstrated to exist within peripheral blood (PB) of several mammalian species including human, guinea pig, mice, rat, and rabbit. Whether or not the PB derived MSCs (PBMSCs) could enhance the regeneration of large bone defects have not been reported. In this study, rabbit MSCs were obtained from mononuclear cells (MNCs) cultures of both the PB and bone marrow (BM) origin. The number of PBMSCs was relatively lower, with the colony forming efficiency (CFE) ranging from 1.2-13 per million MNCs. Under specific inductive conditions, PBMSCs differentiated into osteoblasts, chondrocytes, and adipocytes, showing multi- differentiation ability similar to BMMSCs. Bilateral 20 mm critical-sized bone defects were created in the ulnae of twelve 6-month old New Zealand white rabbits. The defects were treated with allogenic PBMSCs/Skelite (porous calcium phosphate resorbable substitute), BMMSCs/Skelite, PBMNCs/Skelite, Skelite alone and left empty for 12 weeks. Bone regeneration was evaluated by serial radiography, peripheral quantitative computed tomography (pQCT), and histological examinations. The x-ray scores and the pQCT total bone mineral density in the PBMSCs/Skelite and BMMSCs/Skelite treated groups were significantly greater than those of the PBMNCs/Skelite and Skelite alone groups (p

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Hard turning (HT) is a material removal process employing a combination of a single point cutting tool and high speeds to machine hard ferrous alloys which exhibit hardness values over 45 HRC. In this paper, a surface defect machining (SDM) method for HT is proposed which harnesses the combined advantages of porosity machining and pulsed laser pre-treatment processing. From previous experimental work, this was shown to provide better controllability of the process and improved quality of the machined surface. While the experiments showed promising results, a comprehensive understanding of this new technique could only be achieved through a rigorous, in depth theoretical analysis. Therefore, an assessment of the SDM technique was carried out using both finite element method (FEM) and molecular dynamics (MD) simulations.
FEM modelling was used to compare the conventional HT of AISI 4340 steel (52 HRC) using an Al2O3 insert with the proposed SDM method. The simulations showed very good agreement with the previously published experimental results. Compared to conventional HT, SDM provided favourable machining outcomes, such as reduced shear plane angle, reduced average cutting forces, improved surface roughness, lower residual stresses on the machined surface, reduced tool–chip interface contact length and increased chip flow velocity. Furthermore, a scientific explanation of the improved surface finish was revealed using a state-of-the-art MD simulation model which suggested that during SDM, a combination of both the cutting action and rough polishing action help improve the machined surface finish.