Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage

A new approach is presented to resolve bias-induced metastability mechanisms in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). The post stress relaxation of threshold voltage (V(T)) was employed to quantitatively distinguish between the charge trapping process in gate dielectric and defect state creation in active layer of transistor. The kinetics of the charge de-trapping from the SiN traps is analytically modeled and a Gaussian distribution of gap states is extracted for the SiN. Indeed, the relaxation in V(T) is in good agreement with the theory underlying the kinetics of charge de-trapping from gate dielectric. For the TFTs used in this work, the charge trapping in the SiN gate dielectric is shown to be the dominant metastability mechanism even at bias stress levels as low as 10 V.

Local stress relaxation and shear banding in a dry foam under shear.

We have developed a realistic simulation of 2D dry foams under quasistatic shear. After a short transient, a shear-banding instability is observed. These results are compared with measurements obtained on real 2D (confined) foams. The numerical model allows us to exhibit the mechanical response of the material to a single plastication event. From the analysis of this elastic propagator, we propose a scenario for the onset and stability of the flow localization process in foams, which should remain valid for most athermal amorphous systems under creep flow.

Change impact on a product and its redesign process: A tool for knowledge capture and reuse

Change propagates, potentially affecting many aspects of a design and requiring much rework to implement. This article introduces a cross-domain approach to decompose a design and identify possible change propagation linkages, complemented by an interactive tool that generates dynamic checklists to assess change impact. The approach considers the information domains of requirements, functions, components, and the detail design process. Laboratory experiments using a vacuum cleaner suggest that cross-domain modelling helps analyse a design to create and capture the information required for change prediction. Further experiments using an electronic product show that this information, coupled with the interactive tool, helps to quickly and consistently assess the impact of a proposed change. © 2012 Springer-Verlag London Limited.

Modification of the trapped field in bulk high-temperature superconductors as a result of the drilling of a pattern of artificial columnar holes

The trapped magnetic field is examined in bulk high-temperature superconductors that are artificially drilled along their c-axis. The influence of the hole pattern on the magnetization is studied and compared by means of numerical models and Hall probe mapping techniques. To this aim, we consider two bulk YBCO samples with a rectangular cross-section that are drilled each by six holes arranged either on a rectangular lattice (sample I) or on a centered rectangular lattice (sample II). For the numerical analysis, three different models are considered for calculating the trapped flux: (i), a two-dimensional (2D) Bean model neglecting demagnetizing effects and flux creep, (ii), a 2D finite-element model neglecting demagnetizing effects but incorporating magnetic relaxation in the form of an E-J power law, and, (iii), a 3D finite element analysis that takes into account both the finite height of the sample and flux creep effects. For the experimental analysis, the trapped magnetic flux density is measured above the sample surface by Hall probe mapping performed before and after the drilling process. The maximum trapped flux density in the drilled samples is found to be smaller than that in the plain samples. The smallest magnetization drop is found for sample II, with the centered rectangular lattice. This result is confirmed by the numerical models. In each sample, the relative drops that are calculated independently with the three different models are in good agreement. As observed experimentally, the magnetization drop calculated in the sample II is the smallest one and its relative value is comparable to the measured one. By contrast, the measured magnetization drop in sample (1) is much larger than that predicted by the simulations, most likely because of a change of the microstructure during the drilling process.

Numerical study of the impact of process variations on the motional resistance of weakly coupled MEMS resonators

This paper presents a numerical study of the impact of process-induced variations on the achievable motional resistance Rx of one-dimensional, cyclic and cross-coupled architectures of electrostatically transduced MEMS resonators operating in the 250 kHz range. Monte Carlo numerical simulations which accounted for up to 0.75% variation in critical resonator feature sizes were initiated on 1, 2, 3, 4, 5 and 9 coupled MEMS resonators for three distinct coupling architectures. Improvements of 100X in the spread of Rx and 2.7X in mean achievable Rx are reported for the case of 9 resonators when implemented in the cross-coupled topology, as opposed to the traditional one-dimensional chain. © 2013 IEEE.

The forming of variable cross-section I-beams by hot rolling

A process is presented for the forming of variable cross-section I-beams by hot rolling. Optimized I-beams with variable cross-section offer a significant weight advantage over prismatic beams. By tailoring the cross-section to the bending moment experienced within the beam, around 30% of the material can be saved compared to a standard section. Production of such beams by hot rolling would be advantageous, as It combines high volume capacity with high material yields. Through controlled variation of the roll gap during multiple passes, beams with a variable cross-section have been created using shaped rolls similar to those used for conventional I-beam rolling. The process was tested experimentally on a small scale rolling mill, using plasticine as the modelling material. These results were then compared to finite element simulations of individual stages of the process conducted using Abaqus/Standard. Results here show that the process can successfully form a beam with a variable depth web. The main failure modes of the process, and the limitations on the achievable variations In geometry are also presented. Finally, the question of whether or not optimal beam geometries can be created by this process Is discussed. © 2011 Wiley-VCH Verlag GmbH & Co. KGaA. Weinheim.

Cytoplasmic impact on cross-genus cloned fish derived from transgenic common carp (Cyprinus carpio) nuclei and goldfish (Carassius auratus) enucleated eggs

In previous studies of nuclear transplantation, most cloned animals were obtained by intraspecies nuclear transfer and are phenotypically identical to their nuclear donors; furthermore, there was no further report on successful fish cloning since the report of cloned zebrafish. Here we report the production of seven cross-genus cloned fish by transferring nuclei from transgenic common carp into enucleated eggs of goldfish. Nuclear genomes of the cloned fish were exclusively derived from the nuclear donor species, common carp, whereas the mitochondrial DNA from the donor carp gradually disappeared during the development of nuclear transfer (NT) embryos. The somite development process and somite number of nuclear transplants were consistent with the recipient species, goldfish, rather than the nuclear donor species, common carp. This resulted in a long-lasting effect on the vertebral numbers of the cloned fish, which belonged to the range of goldfish. These demonstrate that fish egg cytoplasm not only can support the development driven by transplanted nuclei from a distantly related species at the genus scale but also can modulate development of the nuclear transplants.

Promoting strain relaxation of Si0.72Ge0.28 film on Si (100) substrate by inserting a low-temperature Ge islands layer in UHVCVD

A flat, fully strain-relaxed Si0.72Ge0.28 thin film was grown on Si (1 0 0) substrate with a combination of thin low-temperature (LT) Ge and LT-Si0.72Ge0.28 buffer layers by ultrahigh vacuum chemical vapor deposition. The strain relaxation ratio in the Si0.72Ge0.28 film was enhanced up to 99% with the assistance of three-dimensional Ge islands and point defects introduced in the layers, which furthermore facilitated an ultra-low threading dislocation density of 5 x 10(4) cm (2) for the top SiGe film. More interestingly, no cross-hatch pattern was observed on the SiGe surface and the surface root-mean-square roughness was less than 2 nm. The temperature for the growth of LT-Ge layer was optimized to be 300 degrees C. (C) 2008 Elsevier B.V. All rights reserved.

Development of cross-hatch grid morphology and its effect on ordering growth of quantum dots

We investigate the development of cross-hatch grid surface morphology in growing mismatched layers and its effect on ordering growth of quantum dots (QDs). For a 60degrees dislocation (MD), the effective part in strain relaxation is the part with the Burgers vector parallel to the film/substrate interface within its b(edge) component; so the surface stress over a MD is asymmetric. When the strained layer is relatively thin, the surface morphology is cross-hatch grid with asymmetric ridges and valleys. When the strained layer is relatively thick, the ridges become nearly symmetrical, and the dislocations and the ridges inclined-aligned. In the following growth of InAs, QDs prefer to nucleate on top of the ridges. By selecting ultra-thin In0.15Ga0.85As layer (50nm) and controlling the QDs layer at just formed QDs, we obtained ordered InAs QDs. (C) 2004 Elsevier B.V. All rights reserved.

Optimization of cubic GaN growth by metalorganic chemical vapor deposition based on residual strain relaxation

The reduction of residual strain in cubic GaN growth by inserting a thermoannealing process is investigated. It is found that the epilayer with smaller tensile strain is subject to a wider optimal "growth window." Based on this process, we obtain the high-quality GaN film of pure cubic phase with the thickness of 4 mum by metalorganic chemical vapor deposition. The photoluminescence spectrum at room temperature shows the thick GaN layer has a near-band emission peak with a full width at half maximum of 42 meV which confirms its high crystal quality, further supported by the x-ray (002) diffraction measurement. A simplified model is demonstrated to interpret this strain effect on the growth process. (C) 2003 American Institute of Physics.

Study of rapid carrier capture and relaxation in InAs/GaAs heterostructures

The rapid carrier capture and relaxation processes in InAs/GaAs quantum dots were studied at 77K by using a simple degenerate pump-probe technique. A rising process was observed in the transient reflectivity, following the initial fast relaxation associated with GaAs bulk matrix, and this rising process was assigned to be related to the carrier capture from the GaAs barriers to InAs layers. The assignment was modeled using Kramers-Kronig relation. By analyzing the rising process observed in the transient reflectivity, the carrier capture time constants were obtained. The measured capture times decrease with the increase of carrier concentration.

Damage removal and strain relaxation in As+-implanted Si0.57Ge0.43 epilayers grown by gas source molecular beam epitaxy

The damage removal and strain relaxation in the As+-implanted Si0.57Ge0.43 epilayers were studied by double-crystal x-ray diffractometry and transmission electron microscopy. The results presented in this paper indicate that rapid thermal annealing at temperatures higher than 950 degrees C results in complete removal of irradiation damage accompained by the formation of GeAs precipitates which enhance the removal process of dislocations.

The thermal fatigue resistance of vermicular cast iron coupling with H13 steel units by cast-in process

This paper focuses on improving the thermal fatigue resistance on the surface of vermicular cast iron coupling with inserted H13 steel blocks that had different cross sections, by cast-in processing. The microstructure of bionic units was examined by scanning electron microscope. Micro-hardness and thermal fatigue resistance of bionic samples with varied cross sections and spacings were investigated, respectively. Results show that a marked metallurgical bonding zone was produced at interface between the inserted H13 steel block and the parent material - a unique feature of the bionic structure in the vermicular cast iron samples. The micro-hardness of the bionic samples has been significantly improved. Thermal resistance of the samples with the circular cross section was the highest and the bionics sample with spacing of 2 mm spacing had a much longer thermal fatigue life, thus resulting in the improvement for the thermal fatigue life of the bionic samples, due to the efficient preclusion for the generation and propagation of crack at the interface of H13 block and the matrix. Crown Copyright (c) 2010 Published by Elsevier Ltd. All rights reserved.