Mode Analysis and Design of a Low-Loss Photonic Crystal 60 degrees Waveguide Bend

The guided modes of a two-dimensional photonic crystal straight waveguide and a waveguide bend are studied in order to find the high transmission mechanism for the waveguide bend. We find that high transmission occurs when the mode patterns and wave numbers match, while the single-mode condition in the waveguide bend is not necessarily required. According to the mechanism, a simply modified bend structure with broad high transmission band is proposed. The bandwidth is significantly increased from 19 to 116 nm with transmission above 90%, and covers the entire C band of optical communication.

Stochastic resonance in single-mode semiconductor lasers

Owing to the considerable virtues of semiconductor lasers for applications, they have become the main optical source for fiber communication systems recently. The behavior of stochastic resonance (SR) in direct-modulated semiconductor laser systems is investigated in this article. Considering the carrier and photon noises and the cross-correlation between the two noises, the power spectrum of the photon density and the signal-to-noise ratio (SNR) of the modulated laser system were calculated using the linear approximation method. We found that the SR always appears in the dependence of the SNR upon the bias current density, and is strongly affected by the cross-correlation coefficient of the carrier and photon noises, the frequency of modulation signal and the photon lifetime in the laser cavity. Hence, it is promising to use the SR mechanism to enhance the SNR of direct-modulated semiconductor laser systems and improve the quality of optical communication. (c) 2006 Elsevier B.V. All rights reserved.

Dependence of photoluminescence induced by carbon contamination on GeSi structure

We studied the dependence of photoluminescence induced by carbon contamination on the Ge/GeSi structure. It is found that a carbon and silicon defect complex may be formed in a special structure by opening the in situ high-energy electron diffraction test during growth. There is an important difference in the dependence of photoluminescence on the temperature between the defect complex in our samples and in bulk Si. where the impurity-active center is generated by high-energy electron (about several MeV) irradiation. The quenching temperature of the photoluminescence from the impurity-active center is higher in our Ge/GeSi structure than in bulk Si. The defect complex may serve as an impurity-active center for a possible application in making Si-based light-emitting diodes whose wavelength is around 1.3 mu m in the window of optical communication. (C) 1998 Elsevier Science B.V. All rights reserved.

Proposed scheme for parallel 10Gb/s VSR system and its Verilog HDL realization

This paper proposes a novel and innovative scheme for 10Gb/s parallel Very Short Reach (VSR) optical communication system. The optimized scheme properly manages the SDH/SONET redundant bytes and adjusts the position of error detecting bytes and error correction bytes. Compared with the OIF-VSR4-01.0 proposal, the scheme has a coding process module. The SDH/SONET frames in transmission direction are disposed as follows: (1) The Framer-Serdes Interface (FSI) gets 16x622.08Mb/s STM-64 frame. (2) The STM-64 frame is byte-wise stripped across 12 channels, all channels are data channels. During this process, the parity bytes and CRC bytes are generated in the similar way as OIF-VSR4-01.0 and stored in the code process module. (3) The code process module will regularly convey the additional parity bytes and CRC bytes to all 12 data channels. (4) After the 8B/10B coding, the 12 channels is transmitted to the parallel VCSEL array. The receive process approximately in reverse order of transmission process. By applying this scheme to 10Gb/s VSR system, the frame size in VSR system is reduced from 15552x12 bytes to 14040x12 bytes, the system redundancy is reduced obviously.

A GaAs-Based MOEMS Tunable RCE Photodetector with Single Cantilever Beam

A GaAs-based micro-opto-electro-mech anical-systems(MOEMS) tunable resonant cavity enhanced(RCE)photodetector with a continuous tuning range of 31nm under a 6V tuning voltage is demonstrated. The single cantilever beam structure is adopted for this MOEMS tunable RCE photodetector. The maximum and minimum peak quantum efficiency during the tuning are 36.9 % and 30. 8 %, respectively. The maximum and minimum full-width-at-halfmaximum (FWHM) are 20nm and 14nm,respectively. The dark current density is 7.46A/m2 without bias.

Near-infrared polymer light-emitting diodes based on infrared dye doped poly(N-vinylcarbazole) film

Infrared light-emitting diodes possess potential applications in optical communication and safety detection. in this paper, we fabricated near-infrared light-emitting diodes possess potential applications in optical communication and safety detection. in this paper, we fabricated near-infrared polymer light-emitting diode employing a commercial near-infrared (NIR) organic dye as an emissive dopant dispersed within poly(N-vinylcarbazole) (PVK) by spin-casting method. The used device structure was indium tin oxide/3,4-polyethylene-dioxythiophene-polystyrene sulfonate/PVK: NIR dye/Al.

Wavelength division multiplexing at 2μm

This paper shows, for the first time, the implementation of a WDM subsystem at the 2μm wavelength window with mixed formats. Three wavelength channels were directly modulated withBPSK Fast-OFDM at 5Gbit/s per channel, with a fourth channel NRZ-OOK externally modulated at8.5Gbit/s giving a total capacity in excess of 20 Gbit/s.

Parallel bandwidth characteristics calculations for thin avalanche photodiodes on a SGI Origin 2000 supercomputer

An important factor for high-speed optical communication is the availability of ultrafast and low-noise photodetectors. Among the semiconductor photodetectors that are commonly used in today’s long-haul and metro-area fiber-optic systems, avalanche photodiodes (APDs) are often preferred over p-i-n photodiodes due to their internal gain, which significantly improves the receiver sensitivity and alleviates the need for optical pre-amplification. Unfortunately, the random nature of the very process of carrier impact ionization, which generates the gain, is inherently noisy and results in fluctuations not only in the gain but also in the time response. Recently, a theory characterizing the autocorrelation function of APDs has been developed by us which incorporates the dead-space effect, an effect that is very significant in thin, high-performance APDs. The research extends the time-domain analysis of the dead-space multiplication model to compute the autocorrelation function of the APD impulse response. However, the computation requires a large amount of memory space and is very time consuming. In this research, we describe our experiences in parallelizing the code in MPI and OpenMP using CAPTools. Several array partitioning schemes and scheduling policies are implemented and tested. Our results show that the code is scalable up to 64 processors on a SGI Origin 2000 machine and has small average errors.

Dispersing Light with Surface Plasmon Polaritonic Crystals

Spectral dispersion of light on a finite-size surface plasmon polaritonic (SPP) crystal has been studied. The angular wavelength separation of one or more orders of magnitude higher than in other state-of-the-art wavelength-splitting devices available to date has been demonstrated. The two-stage process is responsible for the dispersion value, which involves conversion of the incident light into SPP Bloch modes of a nanostructure followed by the SPP Bloch waves refraction at the SPP crystal boundary. The high spectral dispersion achievable in plasmonic devices may be useful for integrated high-resolution spectroscopy in nanophotonic, optical communication and lab-on-a-chip applications.

Liouville-space R-matrix-Floquet description of atomic radiative processes involving autoionizing states in the presence of intense electromagnetic fields

A reduced-density-operator description is developed for coherent optical phenomena in many-electron atomic systems, utilizing a Liouville-space, multiple-mode Floquet–Fourier representation. The Liouville-space formulation provides a natural generalization of the ordinary Hilbert-space (Hamiltonian) R-matrix-Floquet method, which has been developed for multi-photon transitions and laser-assisted electron–atom collision processes. In these applications, the R-matrix-Floquet method has been demonstrated to be capable of providing an accurate representation of the complex, multi-level structure of many-electron atomic systems in bound, continuum, and autoionizing states. The ordinary Hilbert-space (Hamiltonian) formulation of the R-matrix-Floquet method has been implemented in highly developed computer programs, which can provide a non-perturbative treatment of the interaction of a classical, multiple-mode electromagnetic field with a quantum system. This quantum system may correspond to a many-electron, bound atomic system and a single continuum electron. However, including pseudo-states in the expansion of the many-electron atomic wave function can provide a representation of multiple continuum electrons. The 'dressed' many-electron atomic states thereby obtained can be used in a realistic non-perturbative evaluation of the transition probabilities for an extensive class of atomic collision and radiation processes in the presence of intense electromagnetic fields. In order to incorporate environmental relaxation and decoherence phenomena, we propose to utilize the ordinary Hilbert-space (Hamiltonian) R-matrix-Floquet method as a starting-point for a Liouville-space (reduced-density-operator) formulation. To illustrate how the Liouville-space R-matrix-Floquet formulation can be implemented for coherent atomic radiative processes, we discuss applications to electromagnetically induced transparency, as well as to related pump–probe optical phenomena, and also to the unified description of radiative and dielectronic recombination in electron–ion beam interactions and high-temperature plasmas.

Projecto de receptores integrados de banda larga

O presente trabalho tem como objectivo o estudo e projecto de receptores optimizados para sistemas de comunicações por fibra óptica de muito alto débito (10Gb/s e 40Gb/s), com a capacidade integrada de compensação adaptativa pós-detecção da distorção originada pela característica de dispersão cromática e de polarização do canal óptico. O capítulo 1 detalha o âmbito de aplicabilidade destes receptores em sistemas de comunicações ópticas com multiplexagem no comprimento de onda (WDM) actuais. O capítulo apresenta ainda os objectivos e principais contribuições desta tese. O capítulo 2 detalha o projecto de um amplificador pós-detecção adequado para sistemas de comunicação ópticos com taxa de transmissão de 10Gb/s. São discutidas as topologias mais adequadas para amplificadores pós detecção e apresentados os critérios que ditaram a escolha da topologia de transimpedância bem como as condições que permitem optimizar o seu desempenho em termos de largura de banda, ganho e ruído. Para além disso são abordados aspectos relacionados com a implementação física em tecnologia monolítica de microondas (MMIC), focando em particular o impacto destes no desempenho do circuito, como é o caso do efeito dos componentes extrínsecos ao circuito monolítico, em particular as ligações por fio condutor do monólito ao circuito externo. Este amplificador foi projectado e produzido em tecnologia pHEMT de Arsenieto de Gálio e implementado em tecnologia MMIC. O protótipo produzido foi caracterizado na fábrica, ainda na bolacha em que foi produzido (on-wafer) tendo sido obtidos dados de caracterização de 80 circuitos protótipo. Estes foram comparados com resultados de simulação e com desempenho do protótipo montado num veículo de teste. O capítulo 3 apresenta o projecto de dois compensadores eléctricos ajustáveis com a capacidade de mitigar os efeitos da dispersão cromática e da dispersão de polarização em sistemas ópticos com débito binário de 10Gb/s e 40Gb/s, com modulação em banda lateral dupla e banda lateral única. Duas topologias possíveis para este tipo de compensadores (a topologia Feed-Forward Equalizer e a topologia Decision Feedback Equaliser) são apresentadas e comparadas. A topologia Feed-Forward Equaliser que serviu de base para a implementação dos compensadores apresentados é analisada com mais detalhe sendo propostas alterações que permitem a sua implementação prática. O capítulo apresenta em detalhe a forma como estes compensadores foram implementados como circuitos distribuídos em tecnologia MMIC sendo propostas duas formas de implementar as células de ganho variável: com recurso à configuração cascode ou com recurso à configuração célula de Gilbert. São ainda apresentados resultados de simulação e experimentais (dos protótipos produzidos) que permitem tirar algumas conclusões sobre o desempenho das células de ganho com as duas configurações distintas. Por fim, o capítulo inclui ainda resultados de desempenho dos compensadores testados como compensadores de um sinal eléctrico afectado de distorção. No capítulo 4 é feita uma análise do impacto da modulação em banda lateral dupla (BLD) em comparação com a modulação em banda lateral única (BLU) num sistema óptico afectado de dispersão cromática e de polarização. Mostra-se que com modulação em BLU, como não há batimento entre portadoras das duas bandas laterais em consequência do processo quadrático de detecção e há preservação da informação da distorção cromática do canal (na fase do sinal), o uso deste tipo de modulação em sistemas de comunicação óptica permite maior tolerância à dispersão cromática e os compensadores eléctricos são muito mais eficientes. O capítulo apresenta ainda resultados de teste dos compensadores desenvolvidos em cenários experimentais de laboratório representativos de sistemas ópticos a 10Gb/s e 40Gb/s. Os resultados permitem comparar o desempenho destes cenários sem e com compensação eléctrica optimizada, para os casos de modulação em BLU e em BLD, e considerando ainda os efeitos da dispersão na velocidade de grupo e do atraso de grupo diferencial. Mostra-se que a modulação BLU em conjunto com compensação adaptativa eléctrica permite um desempenho muito superior á modulação em BLD largamente utilizada nos sistemas de comunicações actuais. Por fim o capítulo 5 sintetiza e apresenta as principais conclusões deste trabalho.

Electric field switching in a resonant tunneling diode electroabsorption modulator

The basic mechanism underlying electric field switching produced by a resonant tunneling diode (RTD) is analyzed and the theory compared with experimental results; agreement to within 12% is achieved. The electroabsorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient change, via the Franz– Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve up to 28-dB optical modulation in a 200- m active length device. The advantage of the RTD-EAM over the conventional reverse-biased p–n junction EAM, is that the RTD-EAM has, in essence, an integrated electronic amplifier and, therefore, requires considerably less switching power.

Correction of transmitter gain and phase errors at the receiver

This paper explores the benefits of compensating transmitter gain and phase inbalances in the receiver for quadrature communication systems. It is assumed that the gain and phase imbalances are introduced at the transmitter only. A simple non-data aided DSP algorithm is used at the reciever to compensate for the imbalances. Computer simulation has been formed to study a coherent QPSK communication system.

Design, Fabrication and Characterization of Passive and Active Polymer Photonic Devices

The rapid developments in fields such as fibre optic communication engineering and integrated optical electronics have expanded the interest and have increased the expectations about guided wave optics, in which optical waveguides and optical fibres play a central role. The technology of guided wave photonics now plays a role in generating information (guided-wave sensors) and processing information (spectral analysis, analog-to-digital conversion and other optical communication schemes) in addition to its original application of transmitting information (fibre optic communication). Passive and active polymer devices have generated much research interest recently because of the versatility of the fabrication techniques and the potential applications in two important areas – short distant communication network and special functionality optical devices such as amplifiers, switches and sensors. Polymer optical waveguides and fibres are often designed to have large cores with 10-1000 micrometer diameter to facilitate easy connection and splicing. Large diameter polymer optical fibres being less fragile and vastly easier to work with than glass fibres, are attractive in sensing applications. Sensors using commercial plastic optical fibres are based on ideas already used in silica glass sensors, but exploiting the flexible and cost effective nature of the plastic optical fibre for harsh environments and throw-away sensors. In the field of Photonics, considerable attention is centering on the use of polymer waveguides and fibres, as they have a great potential to create all-optical devices. By attaching organic dyes to the polymer system we can incorporate a variety of optical functions. Organic dye doped polymer waveguides and fibres are potential candidates for solid state gain media. High power and high gain optical amplification in organic dye-doped polymer waveguide amplifier is possible due to extremely large emission cross sections of dyes. Also, an extensive choice of organic dye dopants is possible resulting in amplification covering a wide range in the visible region.