972 resultados para Charged defects
Calculation of semiconductor band structures and defects by the screened exchange density functional
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The processing of prawns has assumed very great importance in India because processed prawn products have become one of the most important foreign exchange earners in the country.
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Implants of boron into silicon which has been made amorphous by silicon implantation have a shallower depth profile than the same implants into silicon. This results in higher activation and restricted diffusion of the B implants after annealing, and there are also significant differences in the microstructure after annealing compared with B implants into silicon. Rapid isothermal heating with an electron beam and furnace treatments are used to characterize the defect structure as a function of time and temperature. Defects are seen to influence the diffusion of non-substitutional boron.
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Highly dense periodic arrays of multiwalled carbon nanotubes behave like low-density plasma of very heavy charged particles, acting as metamaterials. These arrays with nanoscale lattice constants can be designed to display extended plasmonic band gaps within the optical regime, encompassing the crucial optical windows (850 and 1550 nm) simultaneously. We demonstrate an interesting metamaterial waveguide effect displayed by these nanotube arrays containing line defects. The nanotube arrays with lattice constants of 400 nm and radius of 50 nm were studied. Reflection experiments conducted on the nanoscale structures were in agreement with numerical calculations.
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Rapid thermal annealing of arsenic and boron difluoride implants, such as those used for source/drain regions in CMOS, has been carried out using a scanning electron beam annealer, as part of a study of transient diffusion effects. Three types of e-beam anneal have been performed, with peak temperatures in the range 900 -1200 degree C; the normal isothermal e-beam anneals, together with sub-second fast anneals and 'dual-pulse' anneals, in which the sample undergoes an isothermal pre-anneal followed by rapid heating to the required anneal temperature is less than 0. 5s. The diffusion occuring during these anneal cycles has been modelled using SPS-1D, an implant and diffusion modelling program developed by one of the authors. This has been modified to incorporate simulated temperature vs. time cycles for the anneals. Results are presented applying the usual equilibrium clustering model, a transient point-defect enhancement to the diffusivity proposed recently by Fair and a new dynamic clustering model for arsenic. Good agreement with SIMS measurements is obtained using the dynamic clustering model, without recourse to a transient defect model.
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Bone is a complex material with a hierarchical multi-scale organization from the molecule to the organ scale. The genetic bone disease, osteogenesis imperfecta, is primarily caused by mutations in the collagen type I genes, resulting in bone fragility. Because the basis of the disease is molecular with ramifications at the whole bone level, it provides a platform for investigating the relationship between structure, composition, and mechanics throughout the hierarchy. Prior studies have individually shown that OI leads to: 1. increased bone mineralization, 2. decreased elastic modulus, and 3. smaller apatite crystal size. However, these have not been studied together and the mechanism for how mineral structure influences tissue mechanics has not been identified. This lack of understanding inhibits the development of more accurate models and therapies. To address this research gap, we used a mouse model of the disease (oim) to measure these outcomes together in order to propose an underlying mechanism for the changes in properties. Our main finding was that despite increased mineralization, oim bones have lower stiffness that may result from the poorly organized mineral matrix with significantly smaller, highly packed and disoriented apatite crystals. Using a composite framework, we interpret the lower oim bone matrix elasticity observed as the result of a change in the aspect ratio of apatite crystals and a disruption of the crystal connectivity.