Microscopic Analysis and Applications of the Cu(Sb,Bi)S2 High Optical Absorption

Ternary Cu(Sb,Bi)S2 semiconductors are a group of materials with a wide variety of applications, especially photovoltaic. An analysis of the structural, electronic, and optical properties obtained from first-principles is presented. The microscopic justification of the high absorption coefficients is carried out by splitting the optical properties on chemical species contributions according to the symmetry. Focusing on photovoltaic applications, and from first-principles results, the efficiencies for several solar spectra are obtained as a function of the device thickness. This study indicates the great potential of these materials for photovoltaic and other optical devices.

Dimensionamiento de una red DVB-S2/DVB-RCS2 basado en un sistema O3b

El primer objetivo de este trabajo es realizar una comparación de las prestaciones de un nuevo sistema de comunicaciones llamado O3b y el resto de sistemas convencionales. Esta comparación se hará según una serie de parámetros: la altura de los satélites, la banda de frecuencia usada, la latencia de los enlaces, la potencia transmitida y las pérdidas de propagación de la señal. El segundo propósito del trabajo es el dimensionado de una red que use los estándares abiertos de comunicación por satélite DVB-S2 para el canal forward y DVB-RCS2 para el canal de retorno y usando las infraestructuras proporcionadas por el sistema O3b. Este sistema satelital ofrecerá servicio a una red 4G en un pueblo de Ecuador llamado Yangana.

Mutation of conserved negatively charged residues in the S2 and S3 transmembrane segments of a mammalian K+ channel selectively modulates channel gating.

Voltage-gated channel proteins sense a change in the transmembrane electric field and respond with a conformational change that allows ions to diffuse across the pore-forming structure. Site-specific mutagenesis combined with electrophysiological analysis of expressed mutants in amphibian oocytes has previously established the S4 transmembrane segment as an element of the voltage sensor. Here, we show that mutations of conserved negatively charged residues in S2 and S3 of a brain K+ channel, thought of as countercharges for the positively charged residues in S4, selectively modulate channel gating without modifying the permeation properties. Mutations of Glu235 in S2 that neutralize or reverse charge increase the probability of channel opening and the apparent gating valence. In contrast, replacements of Glu272 by Arg or Thr268 by Asp in S3 decrease the open probability and the apparent gating valence. Residue Glu225 in S2 tolerated replacement only by acidic residues, whereas Asp258 in S3 was intolerant to any attempted change. These results imply that S2 and S3 are unlikely to be involved in channel lining, yet, together with S4, may be additional components of the voltage-sensing structure.