Broadband near-infrared emission from transparent Ni2+-doped sodium aluminosilicate glass ceramics

Broadband neat-infrared emission from transparent Ni2+-doped sodium aluminosilicate glass-cermaics is observed. The broad emission is centered at 1290 nm and covers the whole telecommunication wavelength region (1100-1700 nm) with full width at half maximum of about 340 nm. The observed infrared emission could be attributed to the T-3(2)(F) -> (3)A(2)(F) transition of octahedral Ni2+ ions that occupy high-field sites in nanocrystals. The product of the lifetime and the stimulated emission cross section is 2.15 x 10(-24) cm(2)s. It is suggested that Ni2+-doped sodium aluminosilicate glass ceramics have potential applications in tunable broadband light sources and broadband amplifiers.

High quantum efficiency and high concentration erbium-doped silica glasses fabricated by sintering nanoporous glasses

A new method was used to prepare erbium-doped high silica (SiO2% > 96%) glasses by sintering nanoporous glasses. The concentration of erbium ions in high silica glasses can be considerably more than that in silica glasses prepared by using conventional methods. The fluorescence of 1532 nm has an FWHM (Full Wave at Half Maximum) of 50 nm, wider than 35 nm of EDSFA (erbium-doped silica fiber amplifer), and hence the glass possesses potential application in broadband fiber amplifiers. The Judd-Ofelt theoretical analysis reflects that the quantum efficiency of this erbium-doped glass is about 0.78, although the erbium concentration in this glass (6 x 103) is about twenty times higher than that in silica glass. These excellent characteristics of Er-doped high silica glass will be conducive to its usage in optical amplifiers and microchip lasers.

Intense upconversion and infrared emissions in Er3+;Yb3+ codoped Lu2 Si O5 and (Lu0.5 Gd0.5)2 Si O5 crystals

High optical quality Lu2SiO5 (LSO) and (Lu0.5Gd0.5)(2)SiO5 (LGSO) laser crystals codoped with Er3+ and Yb3+ have been fabricated by the Czochralski method. Intense upconversion (UC) and infrared emission (1543 nm) are observed under excitation of 975 nm. The luminescence processes are explained and the emission efficiencies are quantitatively obtained by measuring the UC efficiency and calculating the emission cross section. The temperature-dependent optical properties of the crystals are also investigated. Our study indicates that Er3+-Yb3+ : LSO and Er3+-Yb3+: LGSO crystals are promising gain media for developing the solid-state 1.5 mu m optical amplifiers and tunable UC lasers. (c) 2008 American Institute of Physics.

Electron emission from arrays of carbon nanotubes/fibres

The overall aim of this work is to produce arrays of field emitting microguns, based on carbon nanotubes, which can be utilised in the manufacture of large area field emitting displays, parallel e-beam lithography systems and electron sources for high frequency amplifiers. This paper will describe the work carried out to produce patterned arrays of aligned multiwall carbon nanotubes (MWCNTs) using a dc plasma technique and a Ni catalyst. We will discuss how the density of the carbon nanotube/fibres can be varied by reducing the deposition yield through nickel interaction with a diffusion layer or by direct lithographic patterning of the Ni catalyst to precisely define the position of each nanotube/fibre. Details of the field emission behaviour of the different arrays of MWCNTS will also be presented. © 2002 Published by Elsevier Science B.V.

Noise suppression in monolithically integrated Michelson interferometer

A novel monolithically integrated Michelson interferometer using intersecting twin-contact semiconductor optical amplifiers is proposed and implemented whereby the two arms are gain imbalanced to give enhanced noise suppression. Experimental OSNR improvements of 8.4 dB for pulses with durations 8 ps and by default ER of 14 dB are demonstrated for low driving currents of between 25 and 30 mA. This is believed to be the smallest Michelson interferometer to date.

Topographical analysis in the SEM using an automatic focusing technique

A novel technique for automated topographical analysis in the SEM has been investigated. It utilizes a 16-bit minicomputer arranged to act as an automatic focusing unit. The computer is coupled to the objective lens of the microscope, by means of a digital to analogue converter, and may regulate the excitation of the lens under program control. Further digital-to-analogue converters allow the computer to act as a programmable scan generator by applying ramp waveforms to the scan amplifiers, permitting the beam to be swept over a small sub-region of the field of interest. The video signal is sampled and applied to an analogue-to-digital converter; the resultant binary numbers are stored in computer memory as an array of values representing relative image intensities within a subregion. A differencing algorithm applied to the collected data allows the level of objective lens excitation to be found at which the sharpness of the image is optimized, and the excitation may be related to the working distance for that subregion through a previous calibration experiment. The sensitivity of the method for detecting small height changes is theoretically of the order of 1 μm.

Gain-switched dynamics of tapered waveguide bow-tie lasers

The use of tapered waveguide lasers and amplifiers for enhanced picosecond pulse generation has led to order-of-magnitude peak power and pulse energy improvements. Monolithic pulse generation schemes have so far relied on a double-tapered bow-tie structure. The modeling of tapered lasers has so far been limited to steady-state operation or has lacked experimental comparison. This paper considers both experimentally and theoretically the gain-switched performance of bow-tie lasers of various taper angles. The role of transverse-mode spatial hole burning in tapered waveguide lasers is thereby investigated.

Recent progress in high-bit-rate applications of four-wave-mixing in SOAs

Non-linearities in semiconductor optical amplifiers have been used to demonstrate a wide range of functions applicable to future optical networks such as wavelength conversion and optical switching. Four-wave-mixing effects in SOAs have been studied extensively in many laboratories with respect to the underlying physical processes and system applications. At BT Labs an optimization of SOAs for FWM has been achieved by altering the device active layer composition and by increasing the device length. We will review recent progress at BT Labs in dispersion compensation, wavelength conversion and demultiplexing at bit-rates of 40 Gbit/s using these devices.

Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Quantum well intermixing is a key technique for photonic integration. The intermixing of InP/InGaAs/InGaAsP material involving the deposition of a layer of sputtered SiO2 on the semiconductor surface, followed by thermal annealing has allowed good control of the intermixing process and has been used to fabricate extended cavity lasers. This will be used for optimization of the performance of optical switches consisting of passive components, modulators and amplifiers.

Recent progress in high-bit-rate applications of four-wave-mixing in SOAs

Non-linearities in semiconductor optical amplifiers have been used to demonstrate a wide range of functions applicable to future optical networks such as wavelength conversion and optical switching. Four-wave-mixing effects in SOAs have been studied extensively in many laboratories with respect to the underlying physical processes and system applications. At BT Labs an optimisation of SOAs for FWM has been achieved by altering the device active layer composition and by increasing the device length. We will review recent progress at BT Labs in dispersion compensation, wavelength conversion and demultiplexing at bit-rates of 40Gbit/s using these devices.

Colourless adaptively modulated optical OFDM transmitters using SOAs as intensity modulators.

The wavelength dependent transmission performance of adaptively modulated optical OFDM (AMOOFDM) signals is investigated, for the first time, over optical amplification- and chromatic dispersion compensation-free IMDD SMF systems using semiconductor optical amplifiers (SOAs) as intensity modulators. A theoretical SOA model describing both optical gain saturation and gain spectral dynamics is developed, based on which optimum SOA operating conditions are identified for various wavelengths varying in a broad range of 1510 nm- 1590 nm. Results show that, SOA intensity modulators operating at the identified optimum conditions enable the realization of colourless AMOOFDM transmitters within the aforementioned wavelength window. Such transmitters are capable of supporting >30 Gb/s signal transmission over 60 km SMFs.

Adaptively modulated optical OFDM modems utilizing RSOAs as intensity modulators in IMDD SMF transmission systems.

Detailed investigations of the transmission performance of adaptively modulated optical orthogonal frequency division multiplexed (AMOOFDM) signals converted using reflective semiconductor optical amplifiers (RSOAs) are undertaken over intensity-modulation and direct-detection (IMDD) single-mode fiber (SMF) transmission systems for WDM-PONs. The theoretical RSOA model adopted for modulating the AMOOFDM signals is experimentally verified rigorously in the aforementioned transmission systems incorporating recently developed real-time end-to-end OOFDM transceivers. Extensive performance comparisons are also made between RSOA and SOA intensity modulators. Optimum RSOA operating conditions are identified, which are independent of RSOA rear-facet reflectivity and very similar to those corresponding to SOAs. Under the identified optimum operating conditions, the RSOA and SOA intensity modulators support the identical AMOOFDM transmission performance of 30Gb/s over 60km SMFs. Under low-cost optical component-enabled practical operating conditions, RSOA intensity modulators with rear-facet reflectivity values of >0.3 outperform considerably SOA intensity modulators in transmission performance, which decreases significantly with reducing RSOA rear-facet reflectivity and optical input power. In addition, results also show that use can be made of the RSOA/SOA intensity modulation-induced negative frequency chirp to improve the AMOOFDM transmission performance in IMDD SMF systems.

Active glass-polymer superlattice structure for photonic integration.

We propose an all-laser processing approach allowing controlled growth of organic-inorganic superlattice structures of rare-earth ion doped tellurium-oxide-based glass and optically transparent polydimethyl siloxane (PDMS) polymer; the purpose of which is to illustrate the structural and thermal compatibility of chemically dissimilar materials at the nanometer scale. Superlattice films with interlayer thicknesses as low as 2 nm were grown using pulsed laser deposition (PLD) at low temperatures (100 °C). Planar waveguides were successfully patterned by femtosecond-laser micro-machining for light propagation and efficient Er(3+)-ion amplified spontaneous emission (ASE). The proposed approach to achieve polymer-glass integration will allow the fabrication of efficient and durable polymer optical amplifiers and lossless photonic devices. The all-laser processing approach, discussed further in this paper, permits the growth of films of a multitude of chemically complex and dissimilar materials for a range of optical, thermal, mechanical and biological functions, which otherwise are impossible to integrate via conventional materials processing techniques.

Energy transfer and enhanced 1.54 μm emission in Erbium-Ytterbium disilicate thin films.

α-(Yb1-xErx)2Si2O7 thin films on Si substrates were synthesized by magnetron co-sputtering. The optical emission from Er3+ ions has been extensively investigated, evidencing the very efficient role of Yb-Er coupling. The energy-transfer coefficient was evaluated for an extended range of Er content (between 0.2 and 16.5 at.%) reaching a maximum value of 2 × 10⁻¹⁶ cm⁻³s⁻¹. The highest photoluminescence emission at 1535 nm is obtained as a result of the best compromise between the number of Yb donors (16.4 at.%) and Er acceptors (1.6 at.%), for which a high population of the first excited state is reached. These results are very promising for the realization of 1.54 μm optical amplifiers on a Si platform.

Concentration dependence of the Er3+ visible and infrared luminescence in Y2-x Erx O3 thin films on Si

Y2-x Erx O3 thin films, with x varying between 0 and 0.72, have been successfully grown on crystalline silicon (c-Si) substrates by radio-frequency magnetron cosputtering of Y2 O 3 and Er2 O3 targets. As-deposited films are polycrystalline, showing the body-centered cubic structure of Y2 O3, and show only a slight lattice parameter contraction when x is increased, owing to the insertion of Er ions. All the films exhibit intense Er-related optical emission at room temperature both in the visible and infrared regions. By studying the optical properties for different excitation conditions and for different Er contents, all the mechanisms (i.e., cross relaxations, up-conversions, and energy transfers to impurities) responsible for the photoluminescence (PL) emission have been identified, and the existence of two different well-defined Er concentration regimes has been demonstrated. In the low concentration regime (x up to 0.05, Er-doped regime), the visible PL emission reaches its highest intensity, owing to the influence of up-conversions, thus giving the possibility of using Y2-x Er x O3 films as an up-converting layer in the rear of silicon solar cells. However, most of the excited Er ions populate the first two excited levels 4I11/2 and 4I13/2, and above a certain excitation flux a population inversion condition between the former and the latter is achieved, opening the route for the realization of amplifiers at 2.75 μm. Instead, in the high concentration regime (Er-compound regime), an increase in the nonradiative decay rates is observed, owing to the occurrence of cross relaxations or energy transfers to impurities. As a consequence, the PL emission at 1.54 μm becomes the most intense, thus determining possible applications for Y2-x Erx O 3 as an infrared emitting material. © 2009 American Institute of Physics.