Evolution of Ge and SiGe quantum dots under excimer laser annealing

We present different relaxation mechanisms of Ge and SiGe quantum dots under excimer laser annealing. Investigation of the coarsening and relaxation of the dots shows that the strain in Ge dots on Ge films is relaxed by dislocation since there is no interface between the Ge dots and the Ge layer, while the SiGe dots on Si0.77Ge0.23 film relax by lattice distortion to coherent clots, which results from the obvious interface between the SiGe clots and the Si0.77Ge0.23 film. The results are suggested and sustained by Vanderbilt and Wickham's theory, and also demonstrate that no bulk diffusion oGeurs during the excimer laser annealing.

High-indium-content InxGa1-xAs/GaAs quantum wells with emission wavelengths above 1.25 mu m at room temperature

High-indium-content InxGa1-xAs/GaAs single/multi-quantum well (SQW/MQW) structures have been systematically investigated. By optimizing the molecular-beam epitaxy growth conditions, the critical thickness of the strained In0.475Ga0.525As/GaAs QWs is raised to 7 nm, which is much higher than the value given by the Matthews and Blakeslee model. The good crystalline quality of the strained InGaAs/GaAs MQWs is proved by x-ray rocking curves. Photoluminescence measurements show that an emission wavelength of 1.25 mum at room temperatures with narrower full width at half maximum less than 30 meV can be obtained. The strain relaxation mechanism is discussed using the Matthews-Blakeslee model. (C) 2004 American Institute of Physics.

Passively mode-locking Nd : Gd0.5Y0.5VO4 laser with an In(0.25)Ga(0.75)Aa absorber grown at low temperature

We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.

Room temperature 1.25 mu m emission from high indium content InxGa1-xAs/GaAs quantum wells grown by molecular beam epitaxy

Long-wavelength high indium content InxGa1-xAs/GaAs single/multi quantum wells (QWs) structures have been successfully grown by molecular beam epitaxy. It is evidenced by X-ray measurements that the critical thickness of the well width of InxGa1-xAs/GaAs QWs with an indium content x of 47.5% can be raised up to 7nm without strain relation. 1.25μ m photoluminescence (PL) emission is obtained from the QWs with narrower full-width at half maximum (FWHM) less than 30meV. Our results are important basements which are useful for further fabricating GaAs-based long-wavelength devices. © 2005 Elsevier B.V. All rights reserved.

Metamorphic growth of 1.25-1.29 mu m InGaAs quantum well lasers on GaAs by molecular beam epitaxy

We demonstrate 1.25-1.29 mu m metamorphic laser diodes grown on GaAs by molecular beam epitaxy (MBE) using an alloy-graded buffer layer (GBL). Use of Be in the GBL is effective to reduce surface/interface roughness and improves optical quality. The RMS surface roughness of the optimized metamorphic laser is only two atomic monolayers for 1 x 1 mu m(2). Cross-sectional transmission electron microscopy (TEM) images confirm that most dislocations are blocked in the GBL. Ridge waveguide lasers with 4 mu m wide ridge were fabricated and characterized. The average threshold current under the pulsed excitation is in 170-200 mA for a cavity length of 0.9-1.5 mm. This value can be further reduced to about 100 mA by high-reflectivity coating. Lasers can work in an ambient temperature up to at least 50 degrees C. (c) 2006 Elsevier B.V. All rights reserved.

Electro-optic coefficients of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice measured by polarization-maintaining fiber-optic Mach-Zehnder interferometer

Ten-period 5.5 nm Si0.75Ge0.25/10.3 nm Si/2.5 nm Si0.5Ge0.5 trilayer asymmetric superlattice was prepared on Si (001) substrate by ultrahigh vacuum chemical vapor deposition at 500 degrees C. The stability of Mach-Zehnder interferometer was improved by utilizing polarization-maintaining fibers. According to the electro-optic responses of the superlattice with the light polarization along [110] and [-110], respectively, both electro-optic coefficients gamma(13) and gamma(63) of such asymmetric superlattice were measured. gamma(13) and gamma(63) are 2.4x10(-11) and 1.3x10(-11) cm/V, respectively, with the incident light wavelength at 1.55 mu m. (c) 2006 American Institute of Physics.

Study on in-plane optical anisotropy of Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice by reflectance difference spectroscopy - art. no. 071908

Si0.75Ge0.25/Si/Si0.5Ge0.5 trilayer asymmetric superlattices were prepared on Si (001) substrate by ultrahigh vacuum chemical vapor deposition at 500 degrees C. The nonlinear optical response caused by inherent asymmetric interfaces in this structure predicted by theories was verified by in-plane optical anisotropy in (001) plane measured via reflectance difference spectroscopy. The results show Si0.75Ge0.25/Si/Si0.5Ge0.5 asymmetric superlattice is optically biaxial and the two optical eigen axes in (001) plane are along the directions [110] and [-110], respectively. Reflectance difference response between the above two eigen axes can be influenced by the width of the trilayers and reaches as large as similar to 10(-4)-10(-3) in 15-period 2.7 nm-Si0.75Ge0.25/8 nm-Si/1.3 nm-Si0.5Ge0.5 superlattice when the normal incident light wavelength is in the range of 500-1100 nm, which is quite remarkable because the optical anisotropy does not exist in bulk Si.

糠基缩水甘油醚与二氧化碳的共聚合研究

本论文采用改进的Williamson方法合成了糠基缩水甘油醚，并在稀土三元催化剂下实现了二氧化碳和糠基缩水甘油醚的共聚合反应，合成出含糠基醚侧链的共聚物。研究了各种不同反应条件如聚合时间、聚合温度、聚合压力和稀土三元催化剂与糠基缩水甘油醚比例等对聚合反应的影响，优化了聚合反应条件。通过对共聚物IR、1H-NMR和13C-NMR的研究，确定了共聚物中的碳酸酯单元含量和共聚物的结构。所得共聚物的数均分子量最高达到13万，玻璃化温度（Tg）在 -29~-30℃之间，共聚物的起始热分解温度达到245℃，比目前已经工业化的二氧化碳－环氧丙烷共聚物（PPC）的起始热分解温度高了大约60℃，本文所合成的共聚物有可能作为增韧剂改善PPC的低温脆性，以拓展PPC的使用温度区间。

二氧化碳－环氧丙烷共聚物的合成和性能研究

无论从碳资源的综合利用，还是从环境保护角度来看，二氧化碳的固定都是引人注目的课题。早在1969年井上祥平等已经发现二氧化碳和环氧化合物可以通过共聚反应制备脂肪族聚碳酸酯，所得的脂肪族聚碳酸酷具有一定的力学性能和生物降解性能，有潜在的应用前景，由此开辟了将二氧化碳固定为全降解聚合物的研究领域。但存在催化效率低、聚合时间长，而且所得聚合物的热学、力学性能较差等很多问题，针对上述问题，本论文主要研究如何在稀土三元催化剂下将CO_2固定为高性能的脂肪族聚碳酸酷。主要结果如下：一、稀土三元催化剂的合成与表征合成了一系列斓系梭酸盐络合物，并用红外光谱研究了它们的结构。用两种方法合成了乙基锌，确定了一条有工业化前景的合成路线。采用红外和核磁光谱考察了稀土三氯醋酸盐与环氧丙烷、二氧六环的作用，以及不同组成的稀土三元催化剂与醚的配位能力。紫外可见光谱结果表明金属有机锌与稀土竣酸盐发生烷基化作用。二、共聚合反应获得了一种高效的稀土三元催化剂，其活性高达6500 g/mol Nd/h,环氧丙烷 的转化率在反应8小时后接近70％，是目前文献报导的同类催化剂中活性最高的。发现稀土化合物配体对稀土三元催化剂的催化活性有较大影响，而不同稀土元素组成的催化剂活性差别不大，两者均对最终聚合物的结构没有明显影响。发现稀土配合物可在一定程度上提高共聚物的交替率，大幅度缩短共聚反应的诱导期和反应时间，大幅度提高共聚物的分子量。发现当CO_2的压力在30atm以下时，聚合压力对聚合物中碳酸醋的含量影响很大，但对环氧丙烷的转化率影响不大。三．聚丙撑碳酸醋(PPC)的热学和力学性能所得的聚合物的玻璃化温度在37-41 ℃之间，热分解温度在186-245 ℃之间，具有良好的力学性能。共聚产物中残留催化剂的灰分、升温速率、分子量和封端剂对聚合物热稳定性具有很大的影响，获得了PPC的热分解温度与升温速率的关系。分析了不同气氛和加热时间对PPC的热分解过程和分解产物的影响。采用不同的动力学方程，对热失重曲线进行分析处理，提出了PPC的热降解动力学和机理，发现PPC的热降解表观活化能为100kJ/mol，其热分解机理为Sigmoidal方式。通过应力一应变曲线，证明溶剂浇铸法和熔融压片法所得PPC膜的力学性能有很大不同。浇铸法中残留溶剂是影响PPC膜的力学性能的主要原因。

铕（II）等低价稀土离子在氧化物基质中光谱特征及其变化规律

近年来，围绕低价稀土离子开展的研究工作越来越多，尤其重视铕(II)、钐（II）和镱(II)的研究，以期获得短波可调固体激光晶体或高效率发光材料。由于4f~n到4f~(n-1)5d'组态的d-f跃迁是属于宇称允许的跃迁，所以它的发射要比4f~n壳层内的受迫电偶极跃迁强得多。这可以保证对泵浦的有效吸收，提高光泵效率。而4f~n组态内部的f-f锐线发射可以实现激光振荡，有利于提高储能，降低阀值。所以深入了解4f~n和 4f~(n-1)5d'体系在基质晶场中的行为以及基质环境对稀土离子发光特征的影响，对于寻找和设计新的激光和发光材料有着极为重要的意义。 本文从理论上讨论了晶场效应和化学键性质对铕(II)、钐(II)等稀土离子发光性质的影响。采用高温固相反应的方法合成了一系列铕(II)、钐(II)激活的氧化物基质荧光材料。结合光谱实验数据建立了晶格环境对铕(II)的 4f~65d'能级影响的表观模型和定量计算公式。为了研究4f~65d'激发态的性质，我们采用改进的Slater法计算了铕(II)和配体氧的有关轨道能量。利用静电晶场模型讨论了4f~65d'能带劈裂幅度(△E)与Eu-O键距(R)的关系，量子化学计算表明5d能级在晶场中的劈裂(△E)与R~5成反比。碱金属和碱七金属磷酸盐基质中铕的光谱数据证实了上述结论。在该基质中铕的4f~65d'能带的劈裂幅度随Eu-O键距增加而变小。在MeSO_4:Eu~(2+) (Me = Ca, Sr，Ba)中，随碱七金属离子半径增大，其发射和激发截止波长均有规律地向短波区移动。这是由于当铕(II)占据较大半径阳离子格位时，将受到较小的晶场影响。其体系的荧光寿命数据也证实了这一点。运用统计热力学原理讨论了4f~(n-1)5d'与 4f~n激发态能级的相对位置对低价稀土离子d-f和f-f跃迁发射的影响。在Ba_(1-x)Mg_(1+x)(SO_4):Eu~(2+)中，适当增大Mg~(2+)离子含量，线一带两种发射强度比R = I (f-f)/I(d-f) 明显增大。Ba_(0.4)Mg_(1.6)(SO_4)_2:Eu~(2+)的f-f锐线发射强度最大。在Ba_(1-x)Sr_xMg(SO_4)_2:Eu~(2+)中，铕(II)的f-f强度随x增大而变小，d-f发射峰则随x增加而发生红移。运用“电子云扩展效应”和鲍林化学键原理解释了，在Na_(3-x)(PO_4)_(1-x)(SO_4)_x:Eu~(2+)和Na_(2-x)CaSi_(1-x)P_xO_4:Eu~(2+)体系中，随X值在固溶区内变大，铕(II)的发射光谱逐渐移向短波区的现象。为了研究稀七离子的取代格位对其光谱性质的影响，我们合成了K_2Mg_2(SO_4)_3:Eu~(2+)单晶化合物。并经四圆衍射仪解出了结构。铕(II)在单晶中占据Mg_1~(2+)格位，与KMgF_3:Eu~(2+)相比，它将受到更强的晶场作用使4f~65d'能带劈裂幅度变大，又通过计算可知，Eu-O键的共价性比Eu-F键更强，因而在K_2Mg_2(SO_4)_3中Eu~(2+) 4f~65d'重心更低一些。综上所述，K_2Mg_2(SO_4)_3:Eu~(2+)的发射能级(E_(em)~m)要比KMgF_3:Eu~(2+)的发射能级更低。光谱实验数据证实了这一结论。用245 nm激发， K_2Mg_2(SO_4)_3:Eu~(2+)发兰光，最大中心处于400 nm。而KMgF_3:Eu~(2+)发紫色或近紫外光(E_(em)~m = 363 nm)，并且在后者是观察到Eu~(2+)离子的f-f跃迁锐线发射。采用高温氢气还原法制备了SmF_2和SmCl_2作为离子激活源。钐(II)激活的硫酸盐材料的荧光光谱数据表明，在室温条件下该基质中钐(II)的荧光光谱均为4f~55d' → 4f~6跃迁的宽带发射。论文对铕(II)，钐(II)等低价稀土离子的4f~(n-1)5d'激发态性质和稀七离子在基质中的格位取代以及电荷补偿效应也作了较为详细的讨论。