Vertical uplift resistance of two closely spaced horizontal strip anchors embedded in cohesive-frictional weightless medium

The vertical uplift resistance of two closely spaced horizontal strip plate anchors has been investigated by using lower and upper bound theorems of the limit analysis in combination with finite elements and linear optimization. The interference effect on uplift resistance of the two anchors is evaluated in terms of a nondimensional efficiency factor (eta(c)). The variation of eta(c) with changes in the clear spacing (S) between the two anchors has been established for different combinations of embedment ratio (H/B) and angle of internal friction of the soil (phi). An interference of the anchors leads to a continuous reduction in uplift resistance with a decrease in spacing between the anchors. The uplift resistance becomes a minimum when the two anchors are placed next to each other without any gap. The critical spacing (S-cr) between the two anchors required to eliminate the interference effect increases with an increase in the values of both H/B and phi. The value of S-cr was found to lie approximately in the range 0.65B-1.5B with H/B = 1 and 11B-14B with H/B = 7 for phi varying from 0 degrees to 30 degrees.

Vertical uplift resistance of two horizontal strip anchors with common vertical axis

With an application of the upper bound finite element limit analysis, the vertical pullout capacity of a group of two horizontal strip plate anchors, with the common vertical axis and placed in a cohesive-frictional soil, has been computed. The variation of the uplift factors Fc, Fq and Fy, due to the contributions of soil cohesion, surcharge pressure and unit weight, respectively, has been evaluated for different combinations of S/B and H/B. As compared to single isolated anchor, the group of two anchors generates significantly greater magnitude of Fc for Φ ≤ 20° especially with greater values of H/B and under fully bonded anchor-soil interface condition. The factor Fc attains almost the maximum value when the upper anchor plate is placed midway between ground surface and the lower anchor plate. The factors Fq and Fy, on the other hand, for a group of two anchors are found to remain almost equal to that of a single isolated anchor as long as the levels of the lower plate in the group and the single isolated anchor are kept the same.

Upper bound solution for pullout capacity of vertical anchors in sand using finite elements and limit analysis

The horizontal pullout capacity of vertical anchors embedded in sand has been determined by using an upper bound theorem of the limit analysis in combination with finite elements. The numerical results are presented in nondimensional form to determine the pullout resistance for various combinations of embedment ratio of the anchor (H/B), internal friction angle (ϕ) of sand, and the anchor-soil interface friction angle (δ). The pullout resistance increases with increases in the values of embedment ratio, friction angle of sand and anchor-soil interface friction angle. As compared to earlier reported solutions in literature, the present solution provides a better upper bound on the ultimate collapse load.

Mixed Convection with Thermal Radiation in a Vertical Pipe with Partially Heated or Cooled Wall

The effect of partial heating/cooling of the wall on the mixed convection with thermal radiation in incompressible laminar pipe flow has been investigated. The gas is assumed to be gray, emitting and absorbing with constant thermophysical properties except the density variation in the buoyancy term. The partial heating/cooling of the wall has significant effect on the Nusselt number. The radiation parameter increases the heat transfer, but reduces the effect of buoyancy. The heat transfer also increases with the optical thickness until a certain value, beyond which it decreases.

Three-Dimensional Study of Natural Convection in a Horizontal Channel With Discrete Heaters on One of Its Vertical Walls

Three-dimensional natural convection in a horizontal channel with an array of discrete flush-mounted heaters on one of its vertical walls is numerically studied. Effects of thermal conductivities of substrate and heaters and convection on outer sides of the channel walls on heat transfer are examined. The substrate affects heat transfer in a wider range of thermal conductivities than do the heaters. At lower heater thermal conductivities a higher heat portion is transferred by direct convection from the heaters to the adjacent coolant. However, higher substrate conductivity is associated with higher heat portion transferred through the substrate. The innermost heater column is found to become the hottest heater column due to the lower coolant accessibility. The heat transfer in the channel is strongly influenced by convection on the outer sides of the channel walls. Correlations are presented for dimensionless temperature maximum and average Nusselt number.

Steady mixed convection flow of Maxwell fluid over an exponentially stretching vertical surface with magnetic field and viscous dissipation

The steady mixed convection flow and heat transfer from an exponentially stretching vertical surface in a quiescent Maxwell fluid in the presence of magnetic field, viscous dissipation and Joule heating have been studied. The stretching velocity, surface temperature and magnetic field are assumed to have specific exponential function forms for the existence of the local similarity solution. The coupled nonlinear ordinary differential equations governing the local similarity flow and heat transfer have been solved numerically by Chebyshev finite difference method. The influence of the buoyancy parameter, viscous dissipation, relaxation parameter of Maxwell fluid, magnetic field and Prandtl number on the flow and heat transfer has been considered in detail. The Nusselt number increases significantly with the Prandtl number, but the skin friction coefficient decreases. The Nusselt number slightly decreases with increasing viscous dissipation parameter, but the skin friction coefficient slightly increases. Maxwell fluid reduces both skin friction coefficient and Nusselt number, whereas buoyancy force enhances them.

Vertical Uplift Resistance of Two Interfering Horizontal Anchors in Clay

The vertical uplift resistance of two interfering rigid strip plate anchors embedded horizontally at the same level in clay has been examined. The lower and upper bound theorems of the limit analysis in combination with finite-elements and linear optimization have been employed to compute the failure load in a bound form. The analysis is meant for an undrained condition and it incorporates the increase of cohesion with depth. For different clear spacing (S) between the anchors, the magnitude of the efficiency factor (eta c gamma) resulting from the combined components of soil cohesion (c) and soil unit weight (gamma), has been computed for different values of embedment ratio (H/B), the rate of linear increase of cohesion with depth (m) and normalized unit weight (gamma H/c). The magnitude of eta c gamma has been found to reduce continuously with a decrease in the spacing between the anchors, and the uplift resistance becomes minimum for S/B=0. It has been noted that the critical spacing between the anchors required to eliminate the interference effect increases continuously with (1) an increase in H/B, and (2) a decrease in m.

Vertical Uplift Resistance of Pipes Buried in Sand

By incorporating the variation of peak soil friction angle (phi) with mean principal stress (sigma(m)), the effect of pipe diameter (D) on the vertical uplift resistance of a long horizontal pipeline embedded in sand has been investigated. The analysis has been performed by using the lower bound finite-element limit analysis in combination with nonlinear optimization. Three well-defined phi versus sigma(m) curves reported from literature for different sands have been used. It is observed that for a given embedment ratio, with an increase in pipe diameter, the magnitude of the uplift factor (F-gamma) reduces quite significantly, which indicates the importance of considering scale effects while designing buried pipe lines. The scale effects have been found to become even more substantial with an increase in the embedment ratio. The analysis compares well with various theoretical results reported from literature. On the other hand, as compared to available centrifuge test results, the present analysis has been found to provide quite a higher magnitude of the uplift resistance when the theoretical prediction is based on peak soil friction angle. However, if the theoretical analysis is performed by using the friction angle that accounts for the progressive shear failure, the difference between the theoretical and centrifuge test results decreases quite significantly.(C) 2013 American Society of Civil Engineers.

Influence of O-2 flow rate on HfO2 gate dielectrics for back-gated graphene transistors

HfO2 thin films deposited on Si substrate using electron beam evaporation, are evaluated for back-gated graphene transistors. The amount of O-2 flow rate, during vaporation is optimized for 35 nm thick HfO2 films, to achieve the best optical, chemical and electrical properties. It has been observed that with increasing oxygen flow rate, thickness of the films increased and refractive index decreased due to increase in porosity resulting from the scattering of the evaporant. The films deposited at low O-2 flow rates (1 and 3 SCCM) show better optical and compositional properties. The effects of post-deposition annealing and post-metallization annealing in forming gas ambience (FGA) on the optical and electrical properties of the films have been analyzed. The film deposited at 3 SCCM O-2 flow rate shows the best properties as measured on MOS capacitors. To evaluate the performance of device properties, back-gated bilayer graphene transistors on HfO2 films deposited at two O-2 flow rates of 3 and 20 SCCM have been fabricated and characterized. The transistor with HfO2 film deposited at 3 SCCM O-2 flow rate shows better electrical properties consistent with the observations on MOS capacitor structures. This suggests that an optimum oxygen pressure is necessary to get good quality films for high performance devices.

AIM-Spice Integration of a Recursive Model for Threshold Voltage Shift in Thin Film Transistors

Non-crystalline semiconductor based thin film transistors are the building blocks of large area electronic systems. These devices experience a threshold voltage shift with time due to prolonged gate bias stress. In this paper we integrate a recursive model for threshold voltage shift with the open source BSIM4V4 model of AIM-Spice. This creates a tool for circuit simulation for TFTs. We demonstrate the integrity of the model using several test cases including display driver circuits.

Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of Delta E-t approximate to 0.3 eV and with a density of state distribution as D-t(Et-j) = D-t0 exp(-Delta E-t/kT) with D-t0 = 5.02 x 10(11) cm(-2) eV(-1). Such a model is useful for developing simulation tools for circuit design. (C) 2014 AIP Publishing LLC.

Stability of Unsupported Vertical Circular Excavations

A methodology has been presented for determining the stability of unsupported vertical cylindrical excavations by using an axisymmetric upper bound limit analysis approach in conjunction with finite elements and linear optimization. For the purpose of excavation design, stability numbers (S-n) have been generated for both (1) cohesive-frictional soils and (2) pure cohesive soils, with an additional provision accounting for linearly increasing cohesion with increasing depth by means of a nondimensional factor m. The variation of S-n with H/b has been established for different values of m and phi, where H and b refer to the height and radius of the cylindrical excavation. A number of useful observations have been gathered about the variation of the stability number and nodal velocity patterns as H/b, phi, and m change. The results of the analysis compare quite well with the different solutions reported in the literature. (C) 2014 American Society of Civil Engineers.

Experimental Investigation on Switching Characteristics of High-Current Insulated Gate Bipolar Transistors at Low Currents

Insulated gate bipolar transistors (IGBTs) are used in high-power voltage-source converters rated up to hundreds of kilowatts or even a few megawatts. Knowledge of device switching characteristics is required for reliable design and operation of the converters. Switching characteristics are studied widely at high current levels, and corresponding data are available in datasheets. But the devices in a converter also switch low currents close to the zero crossings of the line currents. Further, the switching behaviour under these conditions could significantly influence the output waveform quality including zero crossover distortion. Hence, the switching characteristics of high-current IGBTs (300-A and 75-A IGBT modules) at low load current magnitudes are investigated experimentally in this paper. The collector current, gate-emitter voltage and collector-emitter voltage are measured at various low values of current (less than 10% of the device rated current). A specially designed in-house constructed coaxial current transformer (CCT) is used for device current measurement without increasing the loop inductance in the power circuit. Experimental results show that the device voltage rise time increases significantly during turn-off transitions at low currents.

Influence of curvature on the device physics of thin film transistors on flexible substrates

Thin film transistors (TFTs) on elastomers promise flexible electronics with stretching and bending. Recently, there have been several experimental studies reporting the behavior of TFTs under bending and buckling. In the presence of stress, the insulator capacitance is influenced due to two reasons. The first is the variation in insulator thickness depending on the Poisson ratio and strain. The second is the geometric influence of the curvature of the insulator-semiconductor interface during bending or buckling. This paper models the role of curvature on TFT performance and brings to light an elegant result wherein the TFT characteristics is dependent on the area under the capacitance-distance curve. The paper compares models with simulations and explains several experimental findings reported in literature. (C) 2014 AIP Publishing LLC.