Stretching of BDT-gold molecular junctions: thiol or thiolate termination?

It is often assumed that the hydrogen atoms in the thiol groups of a benzene-1,4-dithiol dissociate when Au-benzene-1,4-dithiol-Au junctions are formed. We demonstrate, by stability and transport property calculations, that this assumption cannot be made. We show that the dissociative adsorption of methanethiol and benzene-1,4-dithiol molecules on a flat Au(111) surface is energetically unfavorable and that the activation barrier for this reaction is as high as 1 eV. For the molecule in the junction, our results show, for all electrode geometries studied, that the thiol junctions are energetically more stable than their thiolate counterparts. Due to the fact that density functional theory (DFT) within the local density approximation (LDA) underestimates the energy difference between the lowest unoccupied molecular orbital and the highest occupied molecular orbital by several electron-volts, and that it does not capture the renormalization of the energy levels due to the image charge effect, the conductance of the Au-benzene-1,4-dithiol-Au junctions is overestimated. After taking into account corrections due to image charge effects by means of constrained-DFT calculations and electrostatic classical models, we apply a scissor operator to correct the DFT energy level positions, and calculate the transport properties of the thiol and thiolate molecular junctions as a function of the electrode separation. For the thiol junctions, we show that the conductance decreases as the electrode separation increases, whereas the opposite trend is found for the thiolate junctions. Both behaviors have been observed in experiments, therefore pointing to the possible coexistence of both thiol and thiolate junctions. Moreover, the corrected conductance values, for both thiol and thiolate, are up to two orders of magnitude smaller than those calculated with DFT-LDA. This brings the theoretical results in quantitatively good agreement with experimental data.

Luminous efficiency enhancement of PVK based OLEDs with fac-[ClRe(CO)(3)(bpy)]

The luminous efficiency of organic light-emitting diodes based on poly(N-vinylcarbazole), PVK, was improved by adding fac-[ClRe(CO)(3)(bpy)], bpy = 2,2`-bipyridine, to PVK host. Emissive layers with various Re(I) complex/host ratio were employed and optoelectronic properties were compared with the single PVK device. The single PVK device exhibits a characteristic electroluminescence with blue emission, lambda(max) 420 nm, assigned to the PVK excimer. On the other hand, the intense and broad band at lambda(max) 580 nm of the Re(I) complex/PVK OLEDs is ascribed to the metal-to-ligand charge transfer excited state emission of fac-[ClRe(CO)(3)(bpy)]. At 30 V, the device luminous efficiency increased from 16 mcd/A for the single PVK device to 211 mcd/A for the 11% (w/w) Re(I) complex/PVK OLED, in which fac-[ClRe(CO)(3)(bpy)] acts as an electron-trap in PVK films. The device current is space-charge limited and exhibits typical emissive layer thickness dependence. (C) 2011 Elsevier B.V. All rights reserved.

Determination of carrier mobility in MEH-PPV thin-films by stationary and transient current techniques

Charge transport and shelf-degradation of MEH-PPV thin-films were investigated through stationary (e.g. current versus voltage - JxV) and transient (e.g. Time-of-Flight - ToF, Dark-Injection Space-Charge-Limited Current - DI-SCLC, Charge Extraction by Linearly Increasing Voltage - CELN) current techniques. Charge carrier mobility in nanometric films was best characterized through JxV and DI-SCLC. It approaches 10(-6) cm(2)Ns under a SCLC regime with deep traps for light-emitting diode applications. ToF measurements performed on micrometric layers (i.e. - 3 mu m) confirmed studies in 100 nm-thick films as deposited in OLEDs. All results were comparable to a similar poly(para-phenylene vinylene) derivative, MDMO-PPV. Electrical properties extracted from thin-film transistors demonstrated mobility dependence on carrier concentration in the channel (similar to 10(-7)-10(-4) cm(2)/Vs). At low accumulated charge levels and reduced free carrier concentration, a perfect agreement to the previously cited techniques was observed. Degradation was verified through mobility reduction and changes in trap distribution of states. (C) 2011 Elsevier B.V. All rights reserved.

Fluoropolymer piezoelectrets with tubular channels: resonance behavior controlled by channel geometry

Ferro- or piezoelectrets are dielectric materials with two elastically very different macroscopic phases and electrically charged interfaces between them. One of the newer piezoelectret variants is a system of two fluoroethylenepropylene (FEP) films that are first laminated around a polytetrafluoroethylene (PTFE) template. Then, by removing the PTFE template, a two-layer FEP structure with open tubular channels is obtained. After electrical charging, the channels form easily deformable macroscopic electric dipoles whose changes under mechanical or electrical stress lead to significant direct or inverse piezoelectricity, respectively. Here, different PTFE templates are employed to generate channel geometries that vary in height or width. It is shown that the control of the channel geometry allows a direct adjustment of the resonance frequencies in the tubular-channel piezoelectrets. By combining several different channel widths in a single ferroelectret, it is possible to obtain multiple resonance peaks that may lead to a rather flat frequency-response region of the transducer material. A phenomenological relation between the resonance frequency and the geometrical parameters of a tubular channel is also presented. This relation may help to design piezoelectrets with a specific frequency response.

Synthesis and characterisation of photoreactive silanes for the self-assembly on functionalised silica surfaces

The aim of this thesis was to investigate novel techniques to create complex hierarchical chemical patterns on silica surfaces with micro to nanometer sized features. These surfaces were used for a site-selective assembly of colloidal particles and oligonucleotides. To do so, functionalised alkoxysilanes (commercial and synthesised ones) were deposited onto planar silica surfaces. The functional groups can form reversible attractive interactions with the complementary surface layers of the opposing objects that need to be assembled. These interactions determine the final location and density of the objects onto the surface. Photolithographically patterned silica surfaces were modified with commercial silanes, in order to create hydrophilic and hydrophobic regions on the surface. Assembly of hydrophobic silica particles onto these surfaces was investigated and finally, pH and charge effects on the colloidal assembly were analysed. In the second part of this thesis the concept of novel, "smart" alkoxysilanes is introduced that allows parallel surface activation and patterning in a one-step irradiation process. These novel species bear a photoreactive head-group in a protected form. Surface layers made from these molecules can be irradiated through a mask to remove the protecting group from selected regions and thus generate lateral chemical patterns of active and inert regions on the substrate. The synthesis of an azide-reactive alkoxysilane was successfully accomplished. Silanisation conditions were carefully optimised as to guarantee a smooth surface layer, without formation of micellar clusters. NMR and DLS experiments corroborated the absence of clusters when using neither water nor NaOH as catalysts during hydrolysis, but only the organic solvent itself. Upon irradiation of the azide layer, the resulting nitrene may undergo a variety of reactions depending on the irradiation conditions. Contact angle measurements demonstrated that the irradiated surfaces were more hydrophilic than the non-irradiated azide layer and therefore the formation of an amine upon irradiation was postulated. Successful photoactivation could be demonstrated using condensation patterns, which showed a change in wettability on the wafer surface upon irradiation. Colloidal deposition with COOH functionalised particles further underlined the formation of more hydrophilic species. Orthogonal photoreactive silanes are described in the third part of this thesis. The advantage of orthogonal photosensitive silanes is the possibility of having a coexistence of chemical functionalities homogeneously distributed in the same layer, by using appropriate protecting groups. For this purpose, a 3',5'-dimethoxybenzoin protected carboxylic acid silane was successfully synthesised and the kinetics of its hydrolysis and condensation in solution were analysed in order to optimise the silanisation conditions. This compound was used together with a nitroveratryl protected amino silane to obtain bicomponent surface layers. The optimum conditions for an orthogonal deprotection of surfaces modified with this two groups were determined. A 2-step deprotection process through a mask generated a complex pattern on the substrate by activating two different chemistries at different sites. This was demonstrated by colloidal adsorption and fluorescence labelling of the resulting substrates. Moreover, two different single stranded oligodeoxynucleotides were immobilised onto the two different activated areas and then hybrid captured with their respective complementary, fluorescent labelled strand. Selective hybridisation could be shown, although non-selective adsorption issues need to be resolved, making this technique attractive for possible DNA microarrays.

Trasporto di carica in film sottili di rubrene

Lo scopo della tesi risiede nel caratterizzare film sottili di Rubrene cresciuti per mezzo dell’epitassia molecolare. In particolare si è studiata la densità di stati di trappola con il fine di determinare il grado di purezza di questi campioni. Partendo dalle caratteristiche I-V (Corrente-Tensione) in temperatura è stato possibile utilizzare il modello TM-SCLC (Temperature Modulated Space Charge Limited Current)concludendo che i campioni così cresciuti raggiungono un grado di purezza maggiore rispetto al Rubrene bulk ed escludendo la presenza di difetti estrinseci.

Rivelatori organici di raggi x

L’interesse della ricerca per le applicazioni dei materiali organici all’elettronica è cresciuto ampiamente negli ultimi anni e alcuni gruppi di ricerca hanno studiato la possibilità di sfruttare materiali organici per costruire rivelatori diretti di raggi X. Nel 2003 si immaginava che l’assenza di elementi con numero atomico alto, propria della maggior parte degli organici, scoraggiasse il loro impiego come rivelatori. Tuttavia, la recente scoperta delle proprietà di fotoassorbimento dei monocristalli di 4-idrossicianobenzene (4HCB) potrebbe smentire questa ipotesi e, anzi, suscitare un certo interesse applicativo. Tra i possibili vantaggi operativi del 4HCB come rivelatore ci potrebbero essere, oltre al basso costo, tensioni di funzionamento sull’ordine dei volt e una certa flessibilità meccanica. L’obiettivo del seguente lavoro di tesi è esplorare la risposta che forniscono i monocristalli di 4HCB ai raggi X quando vengono installati su matrici flessibili con elettrodi di contatto in geometrie particolari, interspaziati di 22 µm. Sono state condotte varie misure di risposta elettrica al buio e sotto un fascio di raggi X e nel seguito saranno presentati i risultati. Il primo capitolo è dedicato ad un’introduzione teorica alla struttura dei materiali organici e ai modelli di trasporto dei semiconduttori organici. È evidenziato il fatto che non esiste ad oggi una teoria comprensiva ed efficace come per gli inorganici e vengono discussi alcuni metodi per determinare sperimentalmente la mobilità. La teoria Space Charge Limited Current (SCLC), che modella le caratteristiche corrente-tensione di un solido di piccolo spessore, quando il materiale ha bassa conducibilità e il suo trasporto di carica è mediato sostanzialmente da portatori dello stesso segno, viene introdotta nel capitolo 2. L’importanza di questo modello sta nel fatto che fornisce un metodo efficace per determinare sperimentalmente la mobilità dei portatori in molti materiali organici. Il campo dei rivelatori organici diretti di raggi X è piuttosto recente, e non esiste ancora un’efficace inquadratura teorica. Per questo motivo il capitolo 3 espone lo stato attuale dei rivelatori di raggi X e presenta i meccanismi alla base dei rivelatori inorganici diretti a stato solido e poi discute dei rivelatori organici indiretti già esistenti, gli scintillatori. La descrizione degli apparati sperimentali utilizzati per le misure viene demandata al capitolo 4, mentre il quinto capitolo espone i risultati ottenuti.

Aging of nuclear power plant cables: in search of non-destructive diagnostic quantities

The safety systems of nuclear power plants rely on low-voltage power, instrumentation and control cables. Inside the containment area, cables operate in harsh environments, characterized by relatively high temperature and gamma-irradiation. As these cables are related to fundamental safety systems, they must be able to withstand unexpected accident conditions and, therefore, their condition assessment is of utmost importance as plants age and lifetime extensions are required. Nowadays, the integrity and functionality of these cables are monitored mainly through destructive test which requires specific laboratory. The investigation of electrical aging markers which can provide information about the state of the cable by non-destructive testing methods would improve significantly the present diagnostic techniques. This work has been made within the framework of the ADVANCE (Aging Diagnostic and Prognostics of Low-Voltage I\&C Cables) project, a FP7 European program. This Ph.D. thesis aims at studying the impact of aging on cable electrical parameters, in order to understand the evolution of the electrical properties associated with cable degradation. The identification of suitable aging markers requires the comparison of the electrical property variation with the physical/chemical degradation mechanisms of polymers for different insulating materials and compositions. The feasibility of non-destructive electrical condition monitoring techniques as potential substitutes for destructive methods will be finally discussed studying the correlation between electrical and mechanical properties. In this work, the electrical properties of cable insulators are monitored and characterized mainly by dielectric spectroscopy, polarization/depolarization current analysis and space charge distribution. Among these techniques, dielectric spectroscopy showed the most promising results; by means of dielectric spectroscopy it is possible to identify the frequency range where the properties are more sensitive to aging. In particular, the imaginary part of permittivity at high frequency, which is related to oxidation, has been identified as the most suitable aging marker based on electrical quantities.

Transport Properties and Novel Sensing Applications of Organic Semiconducting Crystals

The present thesis is focused on the study of Organic Semiconducting Single Crystals (OSSCs) and crystalline thin films. In particular solution-grown OSSC, e.g. 4-hdroxycyanobenzene (4HCB) have been characterized in view of their applications as novel sensors of X-rays, gamma-rays, alpha particles radiations and chemical sensors. In the field of ionizing radiation detection, organic semiconductors have been proposed so far mainly as indirect detectors, i.e. as scintillators or as photodiodes. I first study the performance of 4HCB single crystals as direct X-ray detector i.e. the direct photon conversion into an electrical signal, assessing that they can operate at room temperature and in atmosphere, showing a stable and linear response with increasing dose rate. A dedicated study of the collecting electrodes geometry, crystal thickness and interaction volume allowed us to maximize the charge collection efficiency and sensitivity, thus assessing how OSSCs perform at low operating voltages and offer a great potential in the development of novel ionizing radiation sensors. To better understand the processes generating the observed X-ray signal, a comparative study is presented on OSSCs based on several small-molecules: 1,5-dinitronaphthalene (DNN), 1,8-naphthaleneimide (NTI), Rubrene and TIPS-pentacene. In addition, the proof of principle of gamma-rays and alpha particles has been assessed for 4HCB single crystals. I have also carried out an investigation of the electrical response of OSSCs exposed to vapour of volatile molecules, polar and non-polar. The last chapter deals with rubrene, the highest performing molecular crystals for electronic applications. We present an investigation on high quality, millimeter-sized, crystalline thin films (10 – 100 nm thick) realized by exploiting organic molecular beam epitaxy on water-soluble substrates. Space-Charge-Limited Current (SCLC) and photocurrent spectroscopy measurements have been carried out. A thin film transistor was fabricated onto a Cytop® dielectric layer. The FET mobility exceeding 2 cm2/Vs, definitely assess the quality of RUB films.

Trasporto di carica in cristalli organici semiconduttori

Uno dei settori che più si stanno sviluppando nell'ambito della ricerca applicata è senza dubbio quello dell'elettronica organica. Nello specifico lo studio è sospinto dagli indubbi vantaggi che questi dispositivi porterebbero se venissero prodotti su larga scala: basso costo, semplicità realizzativa, leggerezza, flessibilità ed estensione. È da sottolineare che dispositivi basati su materiali organici sono già stati realizzati: si parla di OLED (Organic Light Emitting Diode) LED realizzati sfruttando le proprietà di elettroluminescenza di alcuni materiali organici, OFET (Organig Field Effect Transistor) transistor costruiti con semiconduttori organici, financo celle solari che sfruttano le buone proprietà ottiche di questi composti. Oggetto di analisi di questa tesi è lo studio delle proprietà di trasporto di alcuni cristalli organici, al fine di estrapolarne la mobilità intrinseca e verificare come essa cambi se sottoposti a radiazione x. I due cristalli su cui si è focalizzata questa trattazione sono il 1,5-Dinitronaphtalene e il 2,4-Dinitronaphtol; su di essi è stata eseguita una caratterizzazione ottica e una elettrica, in seguito interpretate con il modello SCLC (Space Charge Limited Current). I risultati ottenuti mostrano che c'è una differenza apprezzabile nella mobilità nei due casi con e senza irraggiamento con raggi x.

(Table 2) Atmospheric electric measurements during the Atlantic Expedition 1965 of METEOR

During the Atlantic expedition potential gradient, small ion density and space charge density have been recorded. Laborious efforts have been taken for receiving an exact estimation of the reduction factor for the field measurements. The mean value of the potential gradient on the free Atlantic Ocean was 105 V/m. The mean daily course is in very good agreement with the results of the Carnegie Institution. Even records taken on individual days near the quator show this course. For the first time it has been attempted to correlate the potential gradient at sea and the voltage between ionosphere and earth measured over land. A narrow relation has been found in 10 cases of balloon ascents with radiosondes. A further remarkable result is, that the short periodical fluctuations of the air electric field at sea with periods of 2 to 20 minutes have amplitudes of the magnitude of the mean field strength and exist all over the oceans. Recordings of the space charge density show, that positively charged air parcels drift in the first hectometer of the air near the sea surface and produce the fluctuation of the potential gradient. A period analysis did not indicate a recognizable relation to the wind velocity up to now, although an effect of air turbulence must be involved. The concentration of small ions also has been measured occasionally. With this and mean values of the potential gradient the air earth curent density has been computed. With n+ = 310 cm**-3, n- = 220 cm**-3 the air conductivity would be Lambda = 1,14 * 10**-14 Ohm**-1 m**-1. These values are smaller than values of other authors by a factor of 2 or 3. Therefore the computed air earth current density is also smaller. The discrepancy could not be explained yet.

Interference of parallel cylindrical Langmuir probes

Current to a cylindrical probe of arbitrary cross section is discussed. Previous results for circular cylinders at the high bias and moderate radius R of interest for electrodynamic bare tethers, for which space charge may be ignored over a large neighborhood of the probe, depend in separate ways on both R and perimeter p. These results are extended to a general convex cross section by introducing certain equivalent radius Req. For any concave cross section, results use a proper equivalent perimeter peq , in addition to Req. Finally, for the joint cross section of separate parallel probes, certain effective perimeter peff replaces peq. Rules to determine Req. peq. and peff are used to discuss collection interference among two or more parallel cylinders when brought from far away to contact

Bare-tether sheath and current: comparison of asymptotic theory and kinetic simulations in stationary plasma

Analytical expressions for current to a cylindrical Langmuir probe at rest in unmagnetized plasma are compared with results from both steady-state Vlasov and particle-in-cell simulations. Probe bias potentials that are much greater than plasma temperature (assumed equal for ions and electrons), as of interest for bare conductive tethers, are considered. At a very high bias, both the electric potential and the attracted-species density exhibit complex radial profiles; in particular, the density exhibits a minimum well within the plasma sheath and a maximum closer to the probe. Excellent agreement is found between analytical and numerical results for values of the probe radiusR close to the maximum radius Rmax for orbital-motion-limited (OML) collection at a particular bias in the following number of profile features: the values and positions of density minimum and maximum, position of sheath boundary, and value of a radius characterizing the no-space-charge behavior of a potential near the high-bias probe. Good agreement between the theory and simulations is also found for parametric laws jointly covering the following three characteristic R ranges: sheath radius versus probe radius and bias for Rmax; density minimum versus probe bias for Rmax; and (weakly bias-dependent) current drop below the OML value versus the probe radius for R > Rmax.

Efficiency of electrodynamic tether thrusters

The performance efficiency of electrodynamic bare tethers acting as thrusters in low Earth orbit, as gauged by the ratio of the system mass dedicated to thrust over mission impulse, is analyzed and compared to the performance efficiency of electrical thrusters. Tether systems are much lighter for times beyond six months in space-tug operations, where there is a dedicated solar array, and beyond one month for reboost of the International Space Station, where the solar array is already in place. Bare-tether propulsive efficiency itself, with the tether considered as part of the power plant, is higher for space tugs. Tether optimization shows that thin tapes have greater propulsive efficiency and are less sensitive to plasma density variations in orbit than cylindrical tethers. The efficiency increases with tape length if some segment next to the power supply at the top is insulated to make the tether potential bias vanish at the lower end; multitape tethers must be used to keep the efficiency high at high thrust levels. The efficiency has a maximum for tether-hardware mass equal to the fraction of power-subsystem mass going into ohmic power, though the maximum is very flat. For space tugs, effects of induced-bias changes in orbit might need to be reduced by choosing a moderately large power-subsystem to tether-hardware mass ratio or by tracking the current-voltage characteristic of the solar array.

Research on wide-bandgap intermediate band solar cells and development of experimental techniques for their characterization

El trabajo que ha dado lugar a esta Tesis Doctoral se enmarca en la invesitagación en células solares de banda intermedia (IBSCs, por sus siglas en inglés). Se trata de un nuevo concepto de célula solar que ofrece la posibilidad de alcanzar altas eficiencias de conversión fotovoltaica. Hasta ahora, se han demostrado de manera experimental los fundamentos de operación de las IBSCs; sin embargo, esto tan sólo has sido posible en condicines de baja temperatura. El concepto de banda intermedia (IB, por sus siglas en inglés) exige que haya desacoplamiento térmico entre la IB y las bandas de valencia y conducción (VB and CB, respectivamente, por sus siglas en inglés). Los materiales de IB actuales presentan un acoplamiento térmico demasiado fuerte entre la IB y una de las otras dos bandas, lo cual impide el correcto funcionamiento de las IBSCs a temperatura ambiente. En el caso particular de las IBSCs fabricadas con puntos cuánticos (QDs, por sus siglas en inglés) de InAs/GaAs - a día de hoy, la tecnología de IBSC más estudiada - , se produce un rápido intercambio de portadores entre la IB y la CB, por dos motivos: (1) una banda prohibida estrecha (< 0.2 eV) entre la IB y la CB, E^, y (2) la existencia de niveles electrónicos entre ellas. El motivo (1) implica, a su vez, que la máxima eficiencia alcanzable en estos dispositivos es inferior al límite teórico de la IBSC ideal, en la cual E^ = 0.71 eV. En este contexto, nuestro trabajo se centra en el estudio de IBSCs de alto gap (o banda prohibida) fabricadsas con QDs, o lo que es lo mismo, QD-IBSCs de alto gap. Hemos fabricado e investigado experimentalmente los primeros prototipos de QD-IBSC en los que se utiliza AlGaAs o InGaP para albergar QDs de InAs. En ellos demostramos une distribución de gaps mejorada con respecto al caso de InAs/GaAs. En concreto, hemos medido valores de E^ mayores que 0.4 eV. En los prototipos de InAs/AlGaAs, este incremento de E^ viene acompaado de un incremento, en más de 100 meV, de la energía de activación del escape térmico. Además, nuestros dispositivos de InAs/AlGaAs demuestran conversión a la alza de tensión; es decir, la producción de una tensión de circuito abierto mayor que la energía de los fotones (dividida por la carga del electrón) de un haz monocromático incidente, así como la preservación del voltaje a temperaura ambiente bajo iluminación de luz blanca concentrada. Asimismo, analizamos el potencial para detección infrarroja de los materiales de IB. Presentamos un nuevo concepto de fotodetector de infrarrojos, basado en la IB, que hemos llamado: fotodetector de infrarrojos activado ópticamente (OTIP, por sus siglas en inglés). Nuestro novedoso dispositivo se basa en un nuevo pricipio físico que permite que la detección de luz infrarroja sea conmutable (ON y OFF) mediante iluminación externa. Hemos fabricado un OTIP basado en QDs de InAs/AlGaAs con el que demostramos fotodetección, bajo incidencia normal, en el rango 2-6/xm, activada ópticamente por un diodoe emisor de luz de 590 nm. El estudio teórico del mecanismo de detección asistido por la IB en el OTIP nos lleva a poner en cuestión la asunción de quasi-niveles de Fermi planos en la zona de carga del espacio de una célula solar. Apoyados por simuaciones a nivel de dispositivo, demostramos y explicamos por qué esta asunción no es válida en condiciones de corto-circuito e iluminación. También llevamos a cabo estudios experimentales en QD-IBSCs de InAs/AlGaAs con la finalidad de ampliar el conocimiento sobre algunos aspectos de estos dispositivos que no han sido tratados aun. En particular, analizamos el impacto que tiene el uso de capas de disminución de campo (FDLs, por sus siglas en inglés), demostrando su eficiencia para evitar el escape por túnel de portadores desde el QD al material anfitrión. Analizamos la relación existente entre el escape por túnel y la preservación del voltaje, y proponemos las medidas de eficiencia cuántica en función de la tensión como una herramienta útil para evaluar la limitación del voltaje relacionada con el túnel en QD-IBSCs. Además, realizamos medidas de luminiscencia en función de la temperatura en muestras de InAs/GaAs y verificamos que los resltados obtenidos están en coherencia con la separación de los quasi-niveles de Fermi de la IB y la CB a baja temperatura. Con objeto de contribuir a la capacidad de fabricación y caracterización del Instituto de Energía Solar de la Universidad Politécnica de Madrid (IES-UPM), hemos participado en la instalación y puesta en marcha de un reactor de epitaxia de haz molecular (MBE, por sus siglas en inglés) y el desarrollo de un equipo de caracterización de foto y electroluminiscencia. Utilizando dicho reactor MBE, hemos crecido, y posteriormente caracterizado, la primera QD-IBSC enteramente fabricada en el IES-UPM. ABSTRACT The constituent work of this Thesis is framed in the research on intermediate band solar cells (IBSCs). This concept offers the possibility of achieving devices with high photovoltaic-conversion efficiency. Up to now, the fundamentals of operation of IBSCs have been demonstrated experimentally; however, this has only been possible at low temperatures. The intermediate band (IB) concept demands thermal decoupling between the IB and the valence and conduction bands. Stateof- the-art IB materials exhibit a too strong thermal coupling between the IB and one of the other two bands, which prevents the proper operation of IBSCs at room temperature. In the particular case of InAs/GaAs quantum-dot (QD) IBSCs - as of today, the most widely studied IBSC technology - , there exist fast thermal carrier exchange between the IB and the conduction band (CB), for two reasons: (1) a narrow (< 0.2 eV) energy gap between the IB and the CB, EL, and (2) the existence of multiple electronic levels between them. Reason (1) also implies that maximum achievable efficiency is below the theoretical limit for the ideal IBSC, in which EL = 0.71 eV. In this context, our work focuses on the study of wide-bandgap QD-IBSCs. We have fabricated and experimentally investigated the first QD-IBSC prototypes in which AlGaAs or InGaP is the host material for the InAs QDs. We demonstrate an improved bandgap distribution, compared to the InAs/GaAs case, in our wide-bandgap devices. In particular, we have measured values of EL higher than 0.4 eV. In the case of the AlGaAs prototypes, the increase in EL comes with an increase of more than 100 meV of the activation energy of the thermal carrier escape. In addition, in our InAs/AlGaAs devices, we demonstrate voltage up-conversion; i. e., the production of an open-circuit voltage larger than the photon energy (divided by the electron charge) of the incident monochromatic beam, and the achievement of voltage preservation at room temperature under concentrated white-light illumination. We also analyze the potential of an IB material for infrared detection. We present a IB-based new concept of infrared photodetector that we have called the optically triggered infrared photodetector (OTIP). Our novel device is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. We have fabricated an OTIP based on InAs/AlGaAs QDs with which we demonstrate normal incidence photodetection in the 2-6 /xm range optically triggered by a 590 nm light-emitting diode. The theoretical study of the IB-assisted detection mechanism in the OTIP leads us to questioning the assumption of flat quasi-Fermi levels in the space-charge region of a solar cell. Based on device simulations, we prove and explain why this assumption is not valid under short-circuit and illumination conditions. We perform new experimental studies on InAs/GaAs QD-IBSC prototypes in order to gain knowledge on yet unexplored aspects of the performance of these devices. Specifically, we analyze the impact of the use of field-damping layers, and demonstrate this technique to be efficient for avoiding tunnel carrier escape from the QDs to the host material. We analyze the relationship between tunnel escape and voltage preservation, and propose voltage-dependent quantum efficiency measurements as an useful technique for assessing the tunneling-related limitation to the voltage preservation of QD-IBSC prototypes. Moreover, we perform temperature-dependent luminescence studies on InAs/GaAs samples and verify that the results are consistent with a split of the quasi-Fermi levels for the CB and the IB at low temperature. In order to contribute to the fabrication and characterization capabilities of the Solar Energy Institute of the Universidad Polite´cnica de Madrid (IES-UPM), we have participated in the installation and start-up of an molecular beam epitaxy (MBE) reactor and the development of a photo and electroluminescence characterization set-up. Using the MBE reactor, we have manufactured and characterized the first QD-IBSC fully fabricated at the IES-UPM.