952 resultados para bond valence


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Report of the Parking System Revenue Bond Funds of Iowa State University of Science and Technology as of and for the year ended June 30, 2008

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Report of the Indoor Multipurpose Use and Training Facility Revenue Bond Funds of Iowa State University of Science and Technology as of and for the year ended June 30, 2008

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Report of the Regulated Materials Facility Revenue Bond Funds of Iowa State University of Science and Technology as of and for the year ended June 30, 2008

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Report of the Memorial Union Revenue Bond Funds of Iowa State University of Science and Technology as of and for the year ended June 30, 2008

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Report of the Athletic Facilities Revenue Bond Funds of Iowa State University of Science and Technology as of and for the year ended June 30, 2008

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Schedule of Debt Service and Coverage for Iowa State University of Science and Technology for the Academic Building Revenue Bond Funds for the year ended June 30, 2009

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Audit report on the Student Health Facility Revenue Bond Funds of Iowa State University of Science and Technology for the year ended June 30, 2009

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Audit report on the Student Health Facility Revenue Bond Funds of Iowa State University of Science and Technology for the year ended June 30, 2010

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Se presenta una modificación del programa Bond-Scand, con vistas a su empleo en ordenadores de reducida capacidad de memoria. Can dicha modificación se pasa de una capacidad de 100 K a 81 K, pudiendo ser ejecutada en el ordenador IBM 360/30 de que dispone la Facultad de Ciencias de la Universidad de Barcelona.

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How long induced moods last is a critical question for mood research but has been only poorly addressed. In particular, physiological parameters have been rarely included to assess the effectiveness of mood induction procedures. Adopting a dimensional model of mood, we investigated the persistence of four different moods (positive higharousal, positive low-arousal, negative high-arousal, negative lowarousal) induced by four film clips ("sport", "nature", "torture", "slum") during a 9-minute computer task. We measured subjective mood state (valence and arousal), respiration, skin conductance level (SCL), heart rate, and corrugator activity in 76 subjects. Viewing of the selected film clips induced the expected effects both subjectively and physiologically. Corrugator activity was higher at the end of the negative clips than the positive clips, and ventilation and SCL were higher for the arousing clips than for the less arousing clips. People who watched the negative clips still reported more negative valence after the computer task and also showed more facial frowning (cf. figure) and lower SCL during the task than people who watched the positive clips. No arousal effects persisted throughout the task. The results suggest that induced changes in the valence dimension of moods are maintained throughout an intervening task and are physiologically best reflected by corrugator activity and SCL, whereas induced changes in the arousal dimension dissipate quickly. The findings of this study enrich, first, our knowledge concerning the relationships between subjective feelings and their physiological substrate. Second, they inform us about the effectiveness of film clips as a mood induction instrument. Third and most important, they suggest that induced changes in valence last longer than induced changes in arousal. High-arousal moods can last for an extended period of time in daily life, but they seem to be short-lived when induced in the lab. An important methodological consequence is that investigating the effect of the arousal dimension of a person's mood induced in the lab may be only possible when the subsequent task is relatively short. Finally, the findings show which physiological measures may be useful in tracking mood states.

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The changes undergone by the Si surface after oxygen bombardment have special interest for acquiring a good understanding of the Si+-ion emission during secondary ion mass spectrometry (SIMS) analysis. For this reason a detailed investigation on the stoichiometry of the builtup surface oxides has been carried out using in situ x-ray photoemission spectroscopy (XPS). The XPS analysis of the Si 2p core level indicates a strong presence of suboxide chemical states when bombarding at angles of incidence larger than 30°. In this work a special emphasis on the analysis and interpretation of the valence band region was made. Since the surface stoichiometry or degree of oxidation varies with the angle of incidence, the respective valence band structures also differ. A comparison with experimentally measured and theoretically derived Si valence band and SiO2 valence band suggests that the new valence bands are formed by a combination of these two. This arises from the fact that Si¿Si bonds are present on the Si¿suboxide molecules, and therefore the corresponding 3p-3p Si-like subband, which extends towards the Si Fermi level, forms the top of the respective new valence bands. Small variations in intensity and energy position for this subband have drastic implications on the intensity of the Si+-ion emission during sputtering in SIMS measurements. A model combining chemically enhanced emission and resonant tunneling effects is suggested for the variations observed in ion emission during O+2 bombardment for Si targets.

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The variation in the emission of Si+ ions from ion-beam-induced oxidized silicon surfaces has been studied. The stoichiometry and the electronic structure of the altered layer has been characterized using x-ray photoelectron spectroscopy (XPS). The XPS analysis of the Si 2p core level indicates the strong presence of suboxide chemical states when bombarding at angles of incidence larger than 30 °. Since the surface stoichiometry or degree of oxidation varies with the angle of incidence, the corresponding valence-band structures also differ among each other. A comparison between experimental measurements and theoretically calculated Si and SiO2 valence bands indicates that the valence bands for the altered layers are formed by a combination of those two. Since Si-Si bonds are present in the suboxide molecules, the top of the respective new valence bands are formed by the corresponding 3p-3p Si-like subbands, which extend up to the Si Fermi level. The changes in stoichiometry and electronic structure have been correlated with the emission of Si+ ions from these surfaces. From the results a general model for the Si+ ion emission is proposed combining the resonant tunneling and local-bond-breaking models.

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Using the extended Thomas-Fermi version of density-functional theory (DFT), calculations are presented for the barrier for the reaction Na20++Na20+¿Na402+. The deviation from the simple Coulomb barrier is shown to be proportional to the electron density at the bond midpoint of the supermolecule (Na20+)2. An extension of conventional quantum-chemical studies of homonuclear diatomic molecular ions is then effected to apply to the supermolecular ions of the alkali metals. This then allows the Na results to be utilized to make semiquantitative predictions of position and height of the maximum of the fusion barrier for other alkali clusters. These predictions are confirmed by means of similar DFT calculations for the K clusters.

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We study the behavior of the random-bond Ising model at zero temperature by numerical simulations for a variable amount of disorder. The model is an example of systems exhibiting a fluctuationless first-order phase transition similar to some field-induced phase transitions in ferromagnetic systems and the martensitic phase transition appearing in a number of metallic alloys. We focus on the study of the hysteresis cycles appearing when the external field is swept from positive to negative values. By using a finite-size scaling hypothesis, we analyze the disorder-induced phase transition between the phase exhibiting a discontinuity in the hysteresis cycle and the phase with the continuous hysteresis cycle. Critical exponents characterizing the transition are obtained. We also analyze the size and duration distributions of the magnetization jumps (avalanches).