All-optical TDM to WDM signal conversion and partial regeneration using XPM with triangular pulses

We propose a new all-optical, all-fibre scheme for conversion of time-division multiplexed to wavelength-division multiplexed signals using cross-phase modulation with triangular pulses. Partial signal regeneration using this technique is also demonstrated.

Fiber optical parametric amplifier in high-speed WDM networks

We report high-capacity (> 1 Tb/s) amplification by a fiber optical parametric amplifier in different roles displaying compatibility and versatility in future WDM networks with phase-shift keying modulation format.

WDM transmission at 2μm over low-loss hollow core photonic bandgap fiber

World's first demonstration of WDM transmission in a HC-PBGF at the predicted low loss region of 2m is presented. A total capacity of 16 Gbit/s is achieved using 1×8.5 Gbit/s and 3×2.5 Gbit/s channels modulated using NRZ OOK over 290 meters of hollow core fiber. © 2013 OSA.

1THz-bandwidth polarization-diverse optical phase conjugation of 10x114Gb/s DP-QPSK WDM signals

Polarization diverse optical phase conjugation of a 1THz spectral-band 1.14Tb/s DP-QPSK WDM multiplex is demonstrated for the first time, showing a worst case Q2 penalty of 0.9dB over all conjugate wavelengths, polarizations and OSNR. © 2014 OSA.

Duty cycle optimization in a wavelength allocated WDM transmission with narrow asymmetric VSB filtering

We investigate the impact of a duty cycle on a wavelength allocated transmission at 40 Gbit/s with narrow, off-centre, optical filtering. We also study how the shape of the off-centred VSB filter affects the performance of the optical system. © 2004 Elsevier Inc. All rights reserved.

Optical sensor interrogation with a blazed fiber Bragg grating and a charge-coupled device linear array

We present what is to our knowledge the first comprehensive investigation of the use of blazed fiber Bragg gratings (BFBGs) to interrogate wavelength division multiplexed (WDM) in-fiber optical sensor arrays. We show that the light outcoupled from the core of these BFBGs is radiated with sufficient optical power that it may be detected with a low-cost charge-coupled device (CCD) array. We present thorough system performance analysis that shows sufficient spectral-spatial resolution to decode sensors with a WDM separation of 75 ρm, signal-to-noise ratio greater than 45-dB bandwidth of 70 nm, and drift of only 0.1 ρm. We show the system to be polarization-state insensitive, making the BFBG-CCD spectral analysis technique a practical, extremely low-cost, alternative to traditional tunable filter approaches.

A multiwavelength low-power wavelength-locked slotted Fabry-Perot laser source for WDM applications

Wavelength-locking of a multiwavelength stabilized slotted Fabry-Perot (SFP) laser to a single-mode laser source is experimentally demonstrated. The SFP resonates at channels spaced by similar to 8 nm between 1510 and 1565 nm over a wide range of temperatures and drive currents. Under low-power (<- 20 dBm) external optical injection, wavelength-locking with a sidemode suppression ratio (SMSR) > 25 dB is achieved. A locking width of > 25 GHz and SMSR > 30 dB can be achieved for each locked wavelength channel at injection power > - 16 dBm.

A novel tunable all-optical incoherent negative-tap fiber-optic transversal filter based on a DFB laser diode and fiber Bragg grating

We demonstrate experimentally a novel and simple tunable all-optical incoherent negative-tap fiber-optic transversal filter based on a distribution feedback laser diode and high reflection fiber Bragg gratings (FBGs). In this filter, variable time delay is provided by cascaded high reflection fiber Bragg gratings (FBGs), and the tuning of the filter is realized by tuning different FBG to match the fixed carrier wavelength, or adjusting the carrier wavelength to fit different FBG. The incoherent negative tapping is realized by using the carrier depletion effect in a distribution feedback laser diode.

Broadly tunable InGaAsP-InP strained multiquantum-well external cavity diode laser

In this letter, we demonstrate a broadly tunable InGaAsInP strained multiquantum-well external cavity diode laser, which operates in the spectral range of 14941667 nm. A maximum continuous-wave output power in excess of 81 mW and sidemode suppression ratio higher than 50 dB were achieved in the central part of the tuning range. Different pump current and temperature regimes are investigated. © 2006 IEEE.

Tunable master-oscillator power-amplifier based on chirped quantum-dot structures

A broadly tunable master-oscillator power-amplifier (MOPA) picosecond optical pulse source is demonstrated, consisting of an external cavity passively mode-locked laser diode with a tapered semiconductor amplifier. By employing chirped quantum-dot structures on both the oscillator's gain chip and amplifier, a wide tunability range between 1187 and 1283 nm is achieved. Under mode-locked operation, the highest output peak power of 4.39 W is achieved from the MOPA, corresponding to a peak power spectral density of 31.4 dBm/nm. © 1989-2012 IEEE.

Blue-to-red tunable SHG from a diode-pumped PPKTP waveguide

Summary form only given. Broadly tunable compact visible laser sources in the spectral region of 500-650 nm are valuable in biophotonics, photomedicine and for many applications including spectroscopy, laser projection and confocal microscopy. Unfortunately, commercially available lasers of this spectral range are in practice bulky and inconvenient in use. An attractive method for the realization of portable visible laser sources is the frequency-doubling of the infrared laser diodes in a nonlinear crystal containing a waveguide [1]. Nonlinear crystal waveguides that offer an order-of-magnitude increase in the IR-to-visible conversion efficiency also enable a very different approach to second-harmonic generation (SHG) tunability in periodically-poled crystals, promising order-of-magnitude increase of wavelength range for SHG conversion. This is possible by utilization of a significant difference in the effective refractive indices of the high-order and low-order modes in multimode waveguides [2]. The recent availability of low-cost, good quality semiconductor diode lasers, offering the coverage of a broad spectral range between 1 µ?? and 1.3 µp? [3,4], in combination with well-established techniques to fabricate good quality waveguides in nonlinear crystals, allows compact tunable CW laser sources in the visible spectral region to be realized [2].

Broadly tunable CW green-to-red laser source based on frequency doubling of a quantum-dot external cavity diode laser in a PPKTP waveguide

Here we present a compact tunable all-room-temperature frequency-doubling scheme, using a periodically poled potassium titanyl phosphate (PPKTP) waveguide and a QD-ECDL. A broad wavelength tunability of the second harmonic generated light (SHG) in the spectral region between 567.7 and 629.1 nm was achieved, with maximum conversion efficiencies in range of 0.34%-7.9%. The maximum output power for the SHG light was 4.11 mW at 591.5 nm, achieved for 52 mW of launched pump power at 1183 nm, resulting in a conversion efficiency of 7.9%.

Generation of CW tunable visible light by SHG of QD laser in a PPKTP waveguide

We demonstrate a CW tunable compact all-room-temperature laser system in the visible spectral region from 567.7 nm to 629.1 nm, by frequency doubling in a periodically-poled KTP waveguide crystal using a tunable quantum-dot external-cavity diode laser.

THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode

The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.