Infrared Spectroscopy of Gadolinium

Measurements of the optical reflectivity of the normal incident light along c-axis [0001] have been made on a Gadolinium single crystal, for temperatures between 50 K and room temperature just above the Curie temperature of Gd, which is 293 K. And covering the spectrum range between 100 -11000 cm-I . This work is the first study of Gd in the far infrared range. In fact it fills the gap below 0.2 eV which has never been measured before. Extreme attention was paid to the fact that Gadolinium is a very reactive metal with air. Thus, the sample was mechanically polished and carefully handled during the measurement. However, temperature dependent optical measurements have been made in the same frequency range for a sample of Gd2O3. For comparison, both samples of Gd and Gd2O3 were examined by X-Ray diffraction. XRD analysis showed that the sample was pure gadolinium and the oxide layer either does not exist, or is very thin. Furthermore, this fact was supported by the absence of any of Gd2O3 features in the Gd sample reflectivity. Kramers Kronig analysis was applied to extract the optical functions from the reflectance data. The optical conductivity shows a strong temperature dependence feature in the mid-infrared. This feature disappears completely at room temperature which supports a magnetic origin.

Effet de la symétrie sur la supraconductivité de LaRhSi3 et la frustration magnétique du SrRE2O4 (RE = Dy ou Ho)

Dans la première partie, nous présentons les résultats de l'étude du supraconducteur sans inversion de symétrie LaRhSi3 par spectroscopie muonique. En champ nul, nous n'avons pas détecté de champ interne. Ceci indique que la fonction d'onde de l'état supraconducteur n'est pas dominée par l'état triplet. Les mesures en champ transverse de 35G présentent une transition en accord avec la transition de phase attendue sous le champ critique Hc1. Nous avons répété ces mesures pour un champ entre Hc1 et Hc2, 150G. Le spectre obtenu pour ces mesures conserve l'asymétrie et relaxe rapidement à basse température tel que prédit pour un supraconducteur dans la phase d'Abrikosov. Néanmoins, les relaxations produites par ce balayage en température présentent une transition à près de 2 fois la température critique attendue. Dans la deuxième partie de ce mémoire, nous donnons l'interprétation des résultats de la diffraction neutronique inélastique par l'étude des champs électriques cristallins. Ces mesures ont été effectuées sur des aimants frustrés SrHo2O4 et SrDy2O4 sous la forme de poudre. L'étude des niveaux produits par les champs cristallins par la méthode des opérateurs de Stevens indique une perte du moment cinétique dans les deux matériaux. Pour le SrDy2O4, l'état fondamental serait constitué de quatre états dégénérés quasi accidentellement qui portent un moment magnétique total non-nul. Toute fois, nos mesures de susceptibilité magnétique ne montrent aucun ordre au-dessus de 50mK. Pour le SrHo2O4, le fondamental est formé d'une paire accidentelle. Nous obtenons un moment magnétique de 6.94(8)$\mu_B$ ce qui s'accorde avec les données expérimentales.

Signature optique d’effet Stark dans une bicouche de CuPc:C60

Les hétérojonctions formées de deux matériaux, un donneur et un accepteur (D/A), sont la base de la majorité des mélanges photovoltaïques organiques. Les mécanismes de séparation des charges dans ces systèmes représentent aujourd'hui l'un des sujets les plus chauds et les plus débattus dans ce domaine. Nous entrons au coeur de ce débat en choisissant un système D/A à base de phtalocyanine de cuivre (CuPc) et de fullerène (C60). Pour sonder les états excités de nos molécules et obtenir de l'information sur les phénomènes à l'interface D/A, nous réalisons une expérience pompe-sonde, appelée absorption photoinduite (PIA). Nous y mesurons le changement fractionnaire de transmission au travers de l'échantillon. Les mesures de PIA sont réalisées à l'état de quasi équilibre, à T=10K. Nous observons une modulation prononcée dans la région du photoblanchiment de l'état fondamental qui nous indique que la pompe induit un décalage du spectre d'absorption de l'état fondamental. Ce décalage peut être expliqué par deux processus : soit l'échantillon est chauffé par la pompe (effet thermique) ou bien des charges sont créées à l'interface entre les deux matériaux (effet Stark). La dépendance en température du spectre d'absorption entre 10K et 290K montre une signature thermique pour un changement de température de 80K. Grâce au ratio des raies Raman anti-Stokes et Stokes, nous démontrons que la pompe chauffe l'échantillon de 34 K, température insuffisante pour attribuer notre signal à un effet thermique. Nous évaporons ensuite la bicouche CuPc/C60 sur de l'ITO et du saphir, substrats qui possèdent des conductivités thermiques différentes et nous observons le même signal de PIA, excluant par le fait même l'hypothèse de l'effet thermique. Puisque notre étude est comparable à la spectroscopie à effet Stark, nous procédons à une analyse similaire en comparant notre signal de PIA au spectre de la transmittance et à ses dérivés première et seconde. Nous observons alors que notre signal reproduit presque parfaitement la dérivée seconde de la transmittance. Ces résultats sont conformes à une signature optique d'effet Stark due à la création de charges à l'interface D/A.

Studies on Conductive Silicone Rubber Compounds

ABSTRACT: The electrical conductivity of silicone rubber vulcanizates containing carbon blacks [e.g., acetylene black, lamp black, and ISAF (N-234) black] were investigated. The change in electrical conductivity with varying amounts of carbon blacks and the temperature dependence was measured. The mechanical properties like tensile strength, tear strength, elongation at break, hardness, etc., of the vulcanizates were determined. A comparative study of the electrical conductivity of the composites revealed that the electrical conductivity of the composites made with acetylene black was higher than that of the composites made of other blacks.

The Steady-State and Transient Characteristic Analysis of Thermal Fixing a Photorefractive Hologram Grating in Lithium Niobate

The transient interaction between a refraction index grating and light beams during simultaneous writing and thermal fixing of a photorefractive hologram is investigated. With a diffusion- and photovoltaic-dominated carrier transport mechanism and carrier thermal activation (temperature dependent) considered in Fe:LiNbO3 crystal, from the standpoint of field-material coupling, the theoretical thermal fixing time and the space-charge field buildup, spatial distribution, and temperature dependence are given numerically by combining the band transport model with mobile ions with the coupled-wave equation

Evaluation of electrical conductivity and thermal diffusivity of vanadyl naphthalocyanine

The electrical conductivity and thermal diffusivity of pristine and iodine doped vanadyl naphthalocyanine (VONc) were studied. In the pristine sample, the temperature dependence was very weak below 300 K. The increase in conductivity at higher temperature must be due to an enhancement in carrier density with increase in thermal energy. The electrical conductivity of VONc increased when doped with iodine. The behavior of VONcI indicated that considerable changes have occurred in the electronic environment of the molecule as a result of doping. Iodine doping enhanced the thermal diffusivity of VONc. The increase in thermal diffusivity of the iodine doped sample may be due to the disorder of iodine atoms occupying the channels in one dimensional lattices.

RF magnetron sputtered perovskite oxide electrodes for Ferroelectric RAM

The main objective of this thesis work is to optimize the growth conditions for obtaining crystalline and conducting Lao.5Sro.5Co03 (LSCO) and Lao.5Sro.5Coo.5.5Nio.5O3 (LSCNO) thin films at low processing temperatures. The films are prepared by radio frequency magnetron sputtering under various deposition conditions. The thin films were used as electrodes for the fabrication of ferroelectric capacitors using BaO.7SrO.3 Ti03 (BST) and PbZro.52 Tio.4803 (PZT). The structural and transport properties of the La1_xSrxCo03 and Lao.5Sro.5Co1_xNix03 are also investigated. The characterization of the bulk and the thin films were performed using different tools. A powder X-ray diffractometer was used to analyze the crystalline nature of the material. The transport properties were investigated by measuring the temperature dependence of resistivity using a four probe technique. The magnetoresistance and thermoelectric power were also used to investigate the transport properties. Atomic force microscope was used to study the surface morphology and thin film roughness. The ferroelectric properties of the capacitors were investigated using RT66A ferroelectric tester.

Precursor nanoscale modulations in ferromagnets: Modeling and thermodynamic characterization

Using a Ginzburg-Landau model for the magnetic degrees of freedom with coupling to disorder, we demonstrate through simulations the existence of stripelike magnetic precursors recently observed in Co-Ni-Al alloys above the Curie temperature. We characterize these magnetic modulations by means of the temperature dependence of local magnetization distribution, magnetized volume fraction, and magnetic susceptibility. We also obtain a temperature-disorder strength phase diagram in which a magnetic tweed phase exists in a small region between the paramagnetic and dipolar phases.

Elastic constants of Ni-Mn-Ga magnetic shape memory alloys

We have measured the adiabatic second order elastic constants of two Ni-Mn-Ga magnetic shape memory crystals with different martensitic transition temperatures, using ultrasonic methods. The temperature dependence of the elastic constants has been followed across the ferromagnetic transition and down to the martensitic transition temperature. Within experimental errors no noticeable change in any of the elastic constants has been observed at the Curie point. The temperature dependence of the shear elastic constant C' has been found to be very different for the two alloys. Such a different behavior is in agreement with recent theoretical predictions for systems undergoing multi-stage structural transitions.

Cavitation in 3He-4He liquid mixtures at low temperatures

Bubble formation in solutions of 3He and 4He is studied within a density-functional approach. In particular, the temperature dependence of the cavitation pressure for different 3He concentrations is calculated at low temperatures and compared to that of pure 4He. The presence of Andreev states lowers the surface tension and, consequently, nucleation barriers are drastically reduced. This fact means that even at low 3He concentrations the cavitation process takes place at higher pressures than the spinodal pressure, which is not the case for pure 4He.

Studies on High- Tc Superconductors with Inequivalent Conducting Layers

The thesis deals with the study of super conducting properties of layered cuprates within the frame work of a modified Lawrence-Doniach (LD) model. The thesis is organized in seven chapters. Chapter I is a survey of the phenomena and theories of conventional superconductivity which can serve as a springboard for launching the study of the new class of oxide superconductors and it also includes a chronological description of the efforts made to overcome the temperature barrier. Chapter II deals with the structure and properties of the copper oxide superconductors and also the experimental constraints on the theories of high te:::nperature superconductivity. A modified Lawrence-Doniach type of phenomenological model which forms the basis of the presnt study is also discussed. In chapter III~ the temperature dependence of the upper critical field both parallel and perpendicular to the layers is determined and the results are compared with d.c. magnetization measurements on different superconducting compoilllds. The temperature and angular dependence of the lower critical field both parallel and perpendicular to the layers is also discussed. Chapters IV, V and VI deal with thermal fluctuation effects on superconducting properties. Fluctuation specific heat is studied in chapter IV. Paraconductivity both parallel and perpendicular to the layers is discussed in chapter V. Fluctuation diamagnetism is dealt with in chapter VI. Dimensional cross over in the fluctuation regime of all these quantities is also discussed. Chapter VII gives a summary of the results and the conclusions arrived at.

Evidence for polaron conduction in nanostructured manganese ferrite

Nanoparticles of manganese ferrite were prepared by the chemical co-precipitation technique. The dielectric parameters, namely, real and imaginary dielectric permittivity (ε and ε ), ac conductivity (σac) and dielectric loss tangent (tan δ), were measured in the frequency range of 100 kHz–8MHz at different temperatures. The variations of dielectric dispersion (ε ) and dielectric absorption (ε ) with frequency and temperature were also investigated. The variation of dielectric permittivity with frequency and temperature followed the Maxwell–Wagner model based on interfacial polarization in consonance with Koops phenomenological theory. The dielectric loss tangent and hence ε exhibited a relaxation at certain frequencies and at relatively higher temperatures. The dispersion of dielectric permittivity and broadening of the dielectric absorption suggest the possibility of a distribution of relaxation time and the existence of multiple equilibrium states in manganese ferrite. The activation energy estimated from the dielectric relaxation is found to be high and is characteristic of polaron conduction in the nanosized manganese ferrite. The ac conductivity followed a power law dependence σac = Bωn typical of charge transport assisted by a hopping or tunnelling process. The observed minimum in the temperature dependence of the frequency exponent n strongly suggests that tunnelling of the large polarons is the dominant transport process

Evaluation of a.c. conductivity of rubber ferrite composites from dielectric measurements

The effect of frequency, composition and temperature on the a.c. electrical conductivity were studied for the ceramic, Ni1–xZnxFe2O4, as well as the filler (Ni1–xZnxFe2O4) incorporated rubber ferrite composites (RFCs). Ni1–xZnxFe2O4 (where x varies from 0 to 1 in steps of 0×2) were prepared by usual ceramic techniques. They were then incorporated into a butyl rubber matrix according to a specific recipe. The a.c. electrical conductivity (sa.c.) calculations were carried out by using the data available from dielectric measurements and by employing a simple relationship. The a.c. conductivity values were found to be of the order of 10–3 S/m. Analysis of the results shows that sa.c. increases with increase of frequency and the change is same for both ceramic Ni1–xZnxFe2O4 and RFCs. sa.c. increases initially with the increase of zinc content and then decreases with increase of zinc. Same behaviour is observed for RFCs too. The dependence of sa.c. on the volume fraction of the magnetic filler was also studied and it was found that the a.c. conductivity of RFCs increases with increase of volume fraction of the magnetic filler. Temperature dependence of conductivity was studied for both ceramic and rubber ferrite composites. Conductivity shows a linear dependence with temperature in the case of ceramic samples

Mechanism of ac conduction in nanostructured manganese zinc mixed ferrites

Mn1−xZnxFe2O4 nanoparticles (x = 0 to 1) were synthesized by the wet chemical co-precipitation technique. X-ray diffraction and transmission electron microscopy and high resolution transmission electron microscopy were effectively utilized to investigate the different structural parameters. The ac conductivity of nanosized Mn1−xZnxFe2O4 were investigated as a function of frequency, temperature and composition. The frequency dependence of ac conductivity is analysed by the power law σ(ω)ac = Bωn which is typical for charge transport by hopping or tunnelling processes. The temperature dependence of frequency exponent n was investigated to understand the conduction mechanism in different compositions. The conduction mechanisms are mainly based on polaron hopping conduction

Organic field-effect transistors and phototransistors based on amorphous materials

A comparison between the charge transport properties in low molecular amorphous thin films of spiro-linked compound and their corresponding parent compound has been demonstrated. The field-effect transistor method is used for extracting physical parameters such as field-effect mobility of charge carriers, ON/OFF ratios, and stability. In addition, phototransistors have been fabricated and demonstrated for the first time by using organic materials. In this case, asymmetrically spiro-linked compounds are used as active materials. The active materials used in this study can be divided into three classes, namely Spiro-linked compounds (symmetrically spiro-linked compounds), the corresponding parent-compounds, and photosensitive spiro-linked compounds (asymmetrically spiro-linked com-pounds). Some of symmetrically spiro-linked compounds used in this study were 2,2',7,7'-Tetrakis-(di-phenylamino)-9,9'-spirobifluorene (Spiro-TAD),2,2',7,7'-Tetrakis-(N,N'-di-p-methylphenylamino)-9,9'-spirobifluorene (Spiro-TTB), 2,2',7,7'-Tetra-(m-tolyl-phenylamino)-9,9'-spirobifluorene (Spiro-TPD), and 2,2Ž,7,7Ž-Tetra-(N-phenyl-1-naphtylamine)-9,9Ž-spirobifluorene (Spiro alpha-NPB). Related parent compounds of the symmetrically spiro-linked compound used in this study were N,N,N',N'-Tetraphenylbenzidine (TAD), N,N,N',N'-Tetrakis(4-methylphenyl)benzidine (TTB), N,N'-Bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), and N,N'-Diphenyl-N,N'-bis(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (alpha-NPB). The photosensitive asymmetrically spiro-linked compounds used in this study were 2,7-bis-(N,N'-diphenylamino)-2',7'-bis(biphenyl-4-yl)-9,9'-spirobifluorene (Spiro-DPSP), and 2,7-bis-(N,N'-diphenylamino)-2',7'-bis(spirobifluorene-2-yl)-9,9'-spirobifluorene (Spiro-DPSP^2). It was found that the field-effect mobilities of charge carriers in thin films of symmetrically spiro-linked compounds and their corresponding parent compounds are in the same order of magnitude (~10^-5 cm^2/Vs). However, the thin films of the parent compounds were easily crystallized after the samples have been exposed in ambient atmosphere and at room temperature for three days. In contrast, the thin films and the transistor characteristics of symmetrically spiro-linked compound did not change significantly after the samples have been stored in ambient atmosphere and at room temperature for several months. Furthermore, temperature dependence of the mobility was analyzed in two models, namely the Arrhenius model and the Gaussian Disorder model. The Arrhenius model tends to give a high value of the prefactor mobility. However, it is difficult to distinguish whether the temperature behaviors of the material under consideration follows the Arrhenius model or the Gaussian Disorder model due to the narrow accessible range of the temperatures. For the first time, phototransistors have been fabricated and demonstrated by using organic materials. In this case, asymmetrically spiro-linked compounds are used as active materials. Intramolecular charge transfer between a bis(diphenylamino)biphenyl unit and a sexiphenyl unit leads to an increase in charge carrier density, providing the amplification effect. The operational responsivity of better than 1 A/W can be obtained for ultraviolet light at 370 nm, making the device interesting for sensor applications. This result offers a new potential application of organic thin film phototransistors as low-light level and low-cost visible blind ultraviolet photodetectors.