986 resultados para Semiconducting antimony


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The electrical conductivity of Mn doped SnO2 systems prepared by an organic route (Pechini's method) has been investigated as a function of antimony and niobium concentration. The conductivity increases with the increase of both concentration ions, however, in a different manner. While the conductivity of niobium doped ceramics increases with the power of 1.6 for the entire range of concentrations studied (0.01-0.7 mol%), the conductivity of antimony doped ceramics increases with the power of 1.9 in the range 0.01-0.05 mol% of Sb; 3.7 in the range 0.05-0.30 mol% and 1.8 in the range 0.30-0.70 mol%. This behavior is attributed to the existence of two stable oxidation states for antimony: Sb3+ and Sb5+, while for niobium there is only one: Nb5+. The power of 3.7 for Sb would be related to the segregation of this ion on the grain boundary accompanied by an additional contribution coming from the substitution of Sn2+ by Sb3+ on the grain surface.

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The sintering behavior of SnO2-CuO system has been investigated for two preparation methods and as a function of antimony concentration. A chemical preparation (Pechini's method) resulted in powders with smaller particle sizes than for a conventional oxide mixture. This led to smaller grain sizes in Pechini's method ceramics. The microstructures were heterogeneous in both systems, showing grain coarsening. The densification was aided by liquid phase formation, due to copper, in both systems, but the temperature of maximum shrinkage rate was larger for the Pechini's method ceramic because copper had to diffuse to the grain surface. Independently of the preparation method, antimony did not aid densification, and increasing its concentration led to a higher densification temperature and lower shrinkage rate. (C) 2003 Kluwer Academic Publishers.

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We report photoinduced photo-darkening in SbPO4-WO3 glass by exposure to 532 nm light with a power density of 143 mW/cm(2). The time of exposure was varied between 0 and 256 min following which visible photo-darkening, peaking at 850 nm was observed. Spectrophotometer measurement of absorption was performed for both treated and untreated regions of the sample. Time exposure to below band-gap light results in a single exponent Gaussian absorption function over an exceptionally wide range of wavelengths (500 nm-1600 nm), with a 1/e width of 647.5 nm. Kramers-Kronig transform of the change in the absorption indicates a negative local change in the refractive index. The dispersed refractive index change at 1550 nm, Delta n, is calculated to be similar to -5 x 10(-8). The peak absorption increases with time of exposure and the photo-darkening remains irreversible at room temperature. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.

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O processo pirometalúrgico convencional para a produção de chumbo metálico é comparado com dois novos processos ambientalmente não agressivos: o eletrohidrometalúrgico e fusão alcalina. O processo eletrohidrometalúrgico consiste em reduzir o tamanho das partículas dos compostos de chumbo e lixiviar os mesmos com uma solução ácida de fluoborato férrico. Neste ponto, o chumbo é dissolvido com os íons férricos sendo reduzidos a íons ferrosos. A solução resultante da lixiviação é bombeada para os compartimentos catódicos de uma célula eletrolítica de diafragma nos quais o chumbo metálico é depositado em catodos de aço inoxidável numa forma compacta e pura. A solução que é empobrecida em íons Pb2+ é então enviada aos compartimentos anódicos da mesma célula onde, nas superfícies de anodos ocorre a oxidação dos íons ferrosos a férricos, que retornam ao estágio de lixiviação. O processo de fusão alcalina consiste em se juntar soda cáustica fundida, enxofre e compostos de chumbo num reator a uma temperatura entre 600 °C e 700 °C. Como um resultado chumbo metálico é obtido juntamente com sais fundidos de sódio, sulfetos metálicos e borra. O fundido é processado, resultando em borra, sulfetos metálicos, soda cáustica e enxofre. Estes dois últimos retornam para o reator. Ambos os processos permitem a recuperação de metais como antimônio, estanho, enxofre e prata, que em processo convencional são perdidos na escória. Esses novos processos são ambientalmente corretos sem poluições severas de Pb e SO2. O chumbo metálico obtido é mais puro que aquele do processo convencional.

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Antimony based glasses have been investigated for the first time regarding the possibility of holographic data storage using visible lasers sources. Changes in both refractive index and the absorption coefficient were measured using a holographic setup. The modulation of the optical constants is reversible by heat treatment. Bragg gratings were written under visible light of an Ar laser and erased thermally.

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Understanding the microscopic origin of the dielectric properties of disordered materials has been a challenge for many years, especially in the case of samples with more than one phase. For polar dielectrics, for instance, the Lepienski approach has indicated that the random free energy barrier model of Dyre must be extended. Here we analyse the dielectric properties of a polymer blend made up with the semiconducting poly(o-methoxyaniline) and poly( vinylidene fluoride-trifluorethylene) POMA/P(VDF-TrFE), and of a hybrid composite of POMA/P(VDF-TrFE)/Zn2SiO4:Mn. For the blend, the Lepienski model, which takes into account the rotation or stretching of electric dipoles, provided excellent fitting to the ac impedance data. Because two phases had to be assumed for the hybrid composite, we had to extend the Lepienski model to fit the data, by incorporating a second transport mechanism. The two mechanisms were associated with the electronic transport in the polymeric matrix and with transport at the interfaces between Zn2SiO4: Mn microparticles and the polymeric matrix, with the relative importance of the interfacial component increasing with the percentage of Zn2SiO4: Mn in the composite. The analysis of impedance data at various temperatures led to a prediction of the theoretical model of a change in morphology at 190 +/- 40 K, and this was confirmed experimentally with a differential scanning calorimetry experiment.

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We have obtained the photoconductivity (PC) excitation spectrum for a stretch-oriented poly(paraphenylene vinylene) film over a wide spectral range (up to 5 eV). The measurements were performed in the surface cell configuration with the electric field parallel or perpendicular to the stretch direction. Although the sample had a stretch ratio of similar to 4, the dark conductivity and the steady-state photoconductivity were both about 40 and 20 times higher with the electric field parallel to the average chain direction, respectively. However, the shape of the PC excitation spectrum was independent of field direction and did not show a significant rise in the ultraviolet, as is usually observed for measurements in the photodiode configuration. The implications of these results to the charge photogeneration mechanism in conjugated polymers are discussed.

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Electro-optical properties of sol-gel derived 2 mol% antimony or niobium doped tin dioxide films have been measured. The electron density has been calculated considering all the relevant scattering mechanisms and experimental conductivity data measured in the range -197 to 25 degrees C. The results support the hypothesis that both ionised impurity scattering and grain boundary scattering have comparable effects in the resistivity of coatings, for free electron density congruent to 5 x 10(18) cm(-3). We have measured variation of photoconductivity excitation with wavelength using xenon and deuterium lamp as light sources. Results show that the main band in the photoconductivity spectrum is dependent on the spectral light source emission, the excitation peak reaching 5 eV (deuterium lamp). This band is due to the recombination process involving oxygen species and photogenerated electron-hole pairs. (C) 1999 Elsevier B.V. B.V. All rights reserved.

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Changes occurring in absorption coefficients when glasses in the SbPO4-WO3 binary system were irradiated by light, at the edge of the absorption band, were measured in real time. These glasses present good thermal and optical properties and photoinduced changes in the absorption coefficients are reversible by heat treatment around 150 degrees C. Subsequent recording/erasing cycles could be made without sample degradation. The sensitivity of the induced optical changes was studied for different wavelengths, light powers and energy of light dose exposures, and for different compositions of the glasses. The changes in the absorption coefficients of the glass samples were accompanied by a color change from yellow to blue, and were also characterized by visible spectroscopy. The color changes occurred through the entire volume of the glass (similar to 2 mm thickness) for the Ar-ion laser lines at the edge of the absorption band. (c) 2006 Elsevier B.V. All rights reserved.

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Ultrafast photoinduced absorption by IRAV modes is used to detect charged solitons in oriented polyacetylene. We find that soliton pairs are photogenerated within our time resolution of similar to250 fs with similar to100% quantum efficiency (phi(ch)). The excitation spectrum of phi(ch) shows an onset at 1.0 eV, with a weak photon energy dependence up to 4.7 eV. These results agree with the ultrafast soliton formation predicted by Su and Schrieffer and with the SSH threshold of 2E(g)/pi for soliton pair production.

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The dielectric properties and loss of Bi1.5ZnSb1.5O7 a poor-semiconducting ceramic were investigated by impedance spectroscopy, in the frequency range from 5 Hz to 13 MHz. Electric measurements were performed from 100 to 700 degreesC. Pyrochlore type phase was synthesized by the polymeric precursor method. Dense ceramic with 97% of the theoretical density was prepared by sintering via constant heating rate. The dielectric permittivity dependence as a function of frequency and temperature showed a strong dispersion at frequency lower than 10 kHz. The losses (tan delta) exhibit slight dependence with the frequency at low temperatures presenting a strong increase at temperatures higher than 400 degreesC. A decrease of the loss magnitude occurs with increasing frequency. Relaxation times were extracted using the dielectric functions Z(omega) and M(omega). The plots of the relaxation times tau(Z'), and tau(M) as a function of temperature follow the Arrhenius law, where a single slope is observed with activation energy values equal to 1.38 and 1.37 eV, respectively. (C) 2003 Elsevier Ltd. All rights reserved.