947 resultados para LOW-TEMPERATURE GAAS
Resumo:
In this paper, the mechanical properties of PI/Si_O, nanocomposite hybrid films with different silica doping levels are experimentally studied at low temperature. Experimental results show that the coefficient of thermal expansion (CTE) of the PI/Si_O, nanocomposite hybrid films gradually reduces when the ambiance temperature is decreased. At the liquid nitrogen temperature (77 K), the CTE value is about five times less than that at room temperature (287 K). The measured CTEs of hybrid films greatly decrease when doped with inorganic silica, especially when the silica doping level is more than 1 wt.%. However, too high silica contents (more than 10 wt.%) can cause problem to disperse effectively and the specimens become quite opaque. Experimental results also show that the effects of the pre-applied stress levels can be neglected on the CTE testing. When the ambient temperature changes from 287 to 77 K, the measured average values of the films' ultimate tensile strength (UTS) and Young's modulus increase about 60 and 90%, respectively, while the breaking elongation decreases about 42%.
Resumo:
An apparatus of low-temperature controlling for fatigue experiments and its crack measuring system were developed and used for offshore structural steel A131 under conditions of both low temperature and random sea ice. The experimental procedures and data processing were described, and a universal random data processing software for FCP under spectrum loading was written. Many specific features of random ice-induced FCP which differed with constant amplitude FCP behaviours were proposed and temperature effect on ice-induced FCP was pointed out with an easily neglected aspect in designing for platforms in sea ice emphasized. In the end, differences of FCP behaviours between sea ice and ocean wave were presented.
Resumo:
I. THE CRYSTAL STRUCTURE OF A NEW DIMER OF TRIPHENYLFLUOROCYCLOBUTADIENE
The crystal structure of thermal isomer of the “head-to-head” dimer of triphenylfluorocyclobutadiene was determined by the direct method. The Σ2 relationship involving the low angle reflections with the largest E’s were found and solved for the signs by the symbolic method of Zachariasen. The structure was seen in the electron density map and the E-map, and was refined antisotropically by the method of least squares. The residual R was 0.065.
The structure is a gem-difluorohexaphenyldihydropentalene. All of the phenyl groups are planar as it is the cyclopentadiene ring of the dihydropentalene skeleton. Overcrowding at the position of the flourines causes some deviations from the normal bond angles in the cyclopentene ring.
The list of observed and calculated structure factors on pages 32-34 will not be legible on the microfilm. Photographic copies may be obtained from the California Institute of Technology.
II. A LOW TEMPERATURE REFINEMENT OF THE CYANURIC TRIAZIDE STRUCTURE
The structure of cyanuric triazide was refined anisotropically by the method of least squares. Three-dimensional intensity data, which has been collected photographically with MoKα radiation at -110˚C, were used in the refinement. The residual R was reduced to 0.081.
The structure is completely planar, and there is no significant bond alternation in the cyanuric ring. The packing of the molecules causes the azide groups to deviate from linearity by 8 degrees.
Resumo:
Well-aligned ZnO films have been successfully prepared by using low-temperature hydrothermal approach on (0001) sapphire substrates that were pre-coated with a ZnO nano-layer by dip-coating. The characterizations of scanning electron microscopy (SEM) and X-ray diffraction (XRD) indicate that the ZnO films consist of hexagonal rods that grow along the c axis based on the sapphire substrates. It is found that the size of ZnO rods can be adjusted by an aqueous solution with some methenamine. (c) 2006 Elsevier B.V. All rights reserved.
Resumo:
Homoepitaxial ZnO films have been grown via liquid-phase epitaxy (LPE) on (000 1) oriented ZnO substrates. X-ray rocking curve revealed the high quality of the ZnO films with a FWHM of 40 arc sec. Films of thickness about 20 gm were gown in the temperature range 700-720 degrees C. The growth rate of ZnO films was estimated to be 0.3 mu m h(-1). Atomic force microscope analysis showed that the surface roughness of ZnO films was very low, which further confirmed the high crystallinity of ZnO films. (c) 2006 Elsevier B.V. All rights reserved.