957 resultados para Hot Temperature


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The effects of electron temperature on the radiation fields and the resistance of a short dipole antenna embedded in a uniaxial plasma have been studied. It is found that for ω < ω_p the antenna excites two waves, a slow wave and a fast wave. These waves propagate only within a cone whose axis is parallel to the biasing magnetostatic field B_o and whose semicone angle is slightly less than sin ^(-1) (ω/ω_p). In the case of ω > ω_p the antenna excites two separate modes of radiation. One of the modes is the electromagnetic mode, while the other mode is of hot plasma origin. A characteristic interference structure is noted in the angular distribution of the field. The far fields are evaluated by asymptotic methods, while the near fields are calculated numerically. The effects of antenna length ℓ, electron thermal speed, collisional and Landau damping on the near field patterns have been studied.

The input and the radiation resistances are calculated and are shown to remain finite for nonzero electron thermal velocities. The effect of Landau damping and the antenna length on the input and radiation resistances has been considered.

The radiation condition for solving Maxwell's equations is discussed and the phase and group velocities for propagation given. It is found that for ω < ω_p in the radial direction (cylindrical coordinates) the power flow is in the opposite direction to that of the phase propagation. For ω > ω_p the hot plasma mode has similar characteristics.

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AlON with a composition of Al23O27N5 was prepared by hot pressing at temperatures lower than 1900°C. The microstructures and final properties, including both mechanical properties and optical properties, of the sintered specimens were studied. The results showed that sintering temperature had a great influence on the densification of specimens and could lead to very different properties, especially the optical transmittance and the maximum infrared transmission.

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The effects of temperature and relative humidity on the rate of drying of split open fish and salted fish in a tunnel dryer have been studied at a constant air velocity. By a judicious combination of these two, the rate of drying could be considerably accelerated, 10 to 12 hours only being required for drying to moisture levels below 30% in the case of mackerel, lactarius, otolithes and kilimeen (Nemipterus japonicus)

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Accurate predictions of combustor hot streak migration enable the turbine designer to identify high-temperature regions that can limit component life. It is therefore important that these predictions are achieved within the short time scales of a design process. This article compares temperature measurements of a circular hot streak through a turning duct and a research turbine with predictions using a three-dimensional Reynolds-averaged Navier-Stokes solver. It was found that the mixing length turbulence model did not predict the hot streak dissipation accurately. However, implementation of a very simple model of the free stream turbulence (FST) significantly improved the exit temperature predictions on both the duct and research turbine. One advantage of the simple FST model described over more complex alternatives is that no additional equations are solved. This makes the method attractive for design purposes, as it is not associated with any increase in computational time.

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This work reports on thermal characterization of SOI (silicon on insulator) CMOS (complementary metal oxide semiconductor) MEMS (micro electro mechanical system) gas sensors using a thermoreflectance (TR) thermography system. The sensors were fabricated in a CMOS foundry and the micro hot-plate structures were created by back-etching the CMOS processed wafers in a MEMS foundry using DRIE (deep reactive ion etch) process. The calibration and experimental details of the thermoreflectance based thermal imaging setup, used for these micro hot-plate gas sensor structures, are presented. Experimentally determined temperature of a micro hot-plate sensor, using TR thermography and built-in silicon resistive temperature sensor, is compared with that estimated using numerical simulations. The results confirm that TR based thermal imaging technique can be used to determine surface temperature of CMOS MEMS devices with a high accuracy. © 2010 EDA Publishing/THERMINIC.

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A method has been standardised for the production of smoke cured mackerel by dry salting in the ratio of 1:8 salt to fish followed by smoking in a traditional smoke chamber at 70±5°C for 5h. The smoke was generated by burning moist coconut husk and saw dust. The product obtained by this method had shelf-lives of 105, 95 and 6 days in chilled storage (0 to 2°C) refrigerated storage (10±2°C) and at room temperature (29±2°C) respectively.

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A rosy-pigmented Gram-negative, thermophilic bacterium with an optimum growth temperature of about 55degreesC was isolated from Tengchong hot springs in Yunnan province, China. Its growth scarcely occurred below 40degreesC or above 70degreesC. Phylogenetic and secondary structural analyses of 16S rRNA and DNA-DNA hybridization showed that the organism represented a new species of the genus Meiothermus. This new species could be distinguished easily from other species of the genus Meiothermus by the following phenotypic characteristics: rosy pigment, expanded body, sucrose and maltose were not utilized, gelatin and starch were not hydrolyzed. On the basis of the above data, the name Meiothermus rosaceus sp. nov. was proposed for the species represented by the strain RH9901(T)(CCTCC-AB200291). (C) 2002 Federation of European Microbiological Societies. Published by Elsevier Science B.V. All rights reserved.

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This article considers constant-pressure autoignition and freely propagating premixed flames of cold methane/air mixtures mixed with equilibrium hot products at high enough dilution levels to burn within the moderate to intense low oxygen dilution (MILD) combustion regime. The analysis is meant to provide further insight on MILD regime boundaries and to identify the effect of hot products speciation. As the mass fraction of hot products in the reactants mixture increases, autoignition occurs earlier. Species profiles show that the products/reactants mixture approximately equilibrates to a new state over a quick transient well before the main autoignition event, but as dilution becomes very high, this equilibration transient becomes more prominent and eventually merges with the primary ignition event. The dilution level at which these two reactive zones merge corresponds well with that marking the transition into the MILD regime, as defined according to conventional criteria. Similarly, premixed flame simulations at high dilutions show evidence of significant reactions involving intermediate species prior to the flame front. Since the premixed flame governing equations system demands that the species and temperature gradients be zero at the "cold" boundary, flame speed cannot be calculated above a certain dilution level. Up to this point, which again agrees reasonably well with the transition into the MILD regime according to convention, the laminar burning velocity was found to increase with hot product dilution while flame thickness remained largely unchanged. Some comments on the MILD combustion regime boundary definition for gas turbine applications are included. Copyright © Taylor & Francis Group, LLC.

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Robust climbing in unstructured environments has been one of the long-standing challenges in robotics research. Among others, the control of large adhesion forces is still an important problem that significantly restricts the locomotion performance of climbing robots. The main contribution of this paper is to propose a novel approach to autonomous robot climbing which makes use of hot melt adhesion (HMA). The HMA material is known as an economical solution to achieve large adhesion forces, which can be varied by controlling the material temperature. For locomotion on both inclined and vertical walls, this paper investigates the basic characteristics of HMA material, and proposes a design and control of a climbing robot that uses the HMA material for attaching and detaching its body to the environment. The robot is equipped with servomotors and thermal control units to actively vary the temperature of the material, and the coordination of these components enables the robot to walk against the gravitational forces even with a relatively large body weight. A real-world platform is used to demonstrate locomotion on a vertical wall, and the experimental result shows the feasibility and overall performances of this approach. © 2013 Elsevier B.V. All rights reserved.

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Physical connection and disconnection control has practical meanings for robot applications. Compared to conventional connection mechanisms, bonding involving a thermal process could provide high connection strength, high repeatability, and power-free connection maintenance, etc. In terms of disconnection, an established bond can be easily weakened with a temperature rise of the material used to form the bond. Hot melt adhesives (HMAs) are such material that can form adhesive bonds with any solid surfaces through a thermally induced solidification process. This paper proposes a novel control method for automatic connection and disconnection based on HMAs. More specifically, mathematical models are first established to describe the flowing behavior of HMAs at higher temperatures, as well as the temperature-dependent strength of an established HMA bond. These models are then validated with a specific type of HMA in a minimalistic robot setup equipped with two mechatronic devices for automated material handling. The validated models are eventually used for determining open parameters in a feedback controller for the robot to perform a pick-and-place task. Through a series of trials with different wooden and aluminum parts, we evaluate the performance of the automatic connection and disconnection methods in terms of speed, energy consumption, and robustness. © 1996-2012 IEEE.

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A two-hot-boat chemical vapor deposition system was modified from a thermal evaporation equipment. This system has the advantage of high vacuum, rapid heating rate and temperature separately controlled boats for the source and samples. These are in favor of synthesizing compound semiconducting nano-materials. By the system, we have synthesized high-quality wurtzite single crystal GaN nanowires and nanotip triangle pyramids via an in-situ doping indium surfactant technique on Si and 3C-SiC epilayer/Si substrates. The products were analyzed by x-ray diffraction, field emission scanning electron microscopy, highresolution transmission electron microscopy, energy- dispersive x-ray spectroscopy, and photoluminescence measurements. The GaN nanotip triangle pyramids, synthesized with this novel method, have potential application in electronic/ photonic devices for field-emission and laser.

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Microcrystalline silicon thin films at different growth stages were prepared by hot wire chemical vapor deposition. Atomic force microscopy has been applied to investigate the evolution of surface topography of these films. According to the fractal analysis I it was found that, the growth of Si film deposited on glass substrate is the zero-diffused stochastic deposition; while for the film on Si substrate, it is the finite diffused deposition on the initial growth stage, and transforms to the zero-diffused stochastic deposition when the film thickness reaches a certain value. The film thickness dependence of island density shows that a maximum of island density appears at the critical film thickness for both substrates. The data of Raman spectra approve that, on the glass substrate, the a-Si: H/mu c-Si:H transition is related to the critical film thickness. Different substrate materials directly affect the surface diffusion ability of radicals, resulting in the difference of growth modes on the earlier growth stage.

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Molecular beam epitaxy is employed to manufacture self-assembled InAs/AlAs quantum-dot resonant tunneling diodes. The resonant tunneling current is superimposed on the thermal current, and together they make up the total electron transport in devices. Steps in current-voltage characteristics and peaks in capacitance-voltage characteristics are explained as electron resonant tunneling via quantum dots at 77 or 300 K, and thus resonant tunneling is observed at room temperature in III-V quantum-dot materials. Hysteresis loops in the curves are attributed to hot electron injection/emission process of quantum dots, which indicates the concomitant charging/discharging effect. (c) 2006 The Electrochemical Society.

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Polycrystalline silicon thin films were prepared by hot-wire chemical vapor deposition ( HWCVD) on glass at 250 degreesC with W or Ta wire as the catalyzers. The structual and optoelectronic properties as functions of the filament temperature, deposition pressure and the filament-substrate distance were studied, and the optimized polycrystalline silicon thin films were obtained with X-c > 90 % ( X-c denotes the crystalline ratio of the film), crystal grain size about 30-40nm, R-d approximate to 0.8nm/s, sigma(d) about 10(-7) - 10(-6) Omega(-1) cm(-1), Ea(a) approximate to 0.5eV and E-opt less than or equal to 1.3eV.

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Tungsten wires were introduced into a plasma-enhanced chemical vapor deposition (PECVD) system as a catalyzer: we name this technique 'hot-wire-assisted PECVD' (HW-PECVD). Under constant deposition pressure (p(g)), gas flow ratio and catalyzer position, the effects of the hot wire temperature (T-f) on the structural properties of the poly-Si films have been characterized by X-ray diffraction (XRD), Raman scattering and Fourier-transform infrared (FTIR) spectroscopy. Compared with conventional PECVD, the grain size, crystalline volume fraction (X-e) and deposition rate were all enhanced when a high T-f was used. The best poly-Si film exhibits a preferential (220) orientation, with a full width at half-maximum (FWHM) of 0.2 degrees. The Si-Si TO peak of the Raman scattering spectrum is located at 519.8 cm(-1) with a FWHM of 7.1 cm(-1). The X-c is 0.93. These improvements are mainly the result of promotion of the dissociation of SiH4 and an increase in the atomic H concentration in the gas phase. (C) 2001 Elsevier Science B.V. All rights reserved.