Synthesis and characterization of new carbazole/fluorene-based derivatives for blue-light-emitting devices

2,7-Bis(9-ethylcarbazol-3-yl)-9,9-di(2-ethylhexyl)fluorene and a segmented copolymer composed of the same chromophores alternated with hexamethylene fragments were synthesized. The obtained materials possess good solubility in common organic solvents, high thermal stability with 1% weight loss temperature of 350-370 degrees C, and suitable glass transition temperatures. Both derivatives show blue fluorescence in dilute solutions as well as in solid state, demonstrating that excimers are not formed in the thin films. The fluorescence spectra of the materials do not show any peaks in the long-wavelength region even after annealing at 200 degrees C in air. An organic LED with the configuration of ITO/copolymer/Al generates blue electroluminescence with the maximum peak at 416 nm, rather low turn-on voltage (4.0 V), and brightness of about 400 cd/m(2). The heterostructure device based on model derivative emitted stable blue light with low operation voltage (100 cd/m(2) at similar to 11 V) and demonstrated luminescence efficiency of 0.8 cd/A.

Organic heterojunction with reverse rectifying characteristics and its application in field-effect transistors

A diode with a reverse rectifying characteristics was fabricated based on the organic heterojunction of copper phthalocyanine (CuPc) and copper-hexadecafluoro-phthalocyanine (F16CuPc). At the heterojunction interface, HOMO of CuPc is bended upwards and LUMO of F16CuPc is bended downwards, since the charge carriers were accumulated at both side of the interface, electrons in F16CuPc and holes in CuPc. The thickness of holes accumulated at the CuPc layer is about 10 nm. which was determined by fabricating organic field-effect transistors with active layers in series of thickness. By utilizing the heterojunction-effect, the threshold voltage in organic transistors can be modified.

The operation of multiquantum-well barriers

The multiquantum barrier (MQB), proposed by Iga et al in 1986, has been shown by several researchers to be an effective structure for improving the operating characteristics of laser diodes. These improvements include a reduction in the laser threshold current and increased characteristic temperatures. The operation of the MQB has been described as providing an increased barrier to electron overflow by reflecting high energy electrons trying to escape from the active region of the laser.This is achieved in a manner analogous to a Bragg reflector in optics. This thesis presents an investigation of the effectiveness of the MQB as an electron reflector. Numerical models have been developed for calculating the electron reflection due to MQB. Novel optical and electrical characterisation techniques have been used to try to measure an increase in barrier height due to the MQB in AlGaInP.It has been shown that the inclusion of MQB structures in bulk double heterostructure visible laser diodes can halve the threshold current above room temperature and the characteristic temperature of these lasers can be increased by up to 20K.These improvements are shown to occur in visible laser diodes even with the inclusion of theoretically ineffective MQB structures, hence the observed improvement in the characteristics of the laser diodes described above cannot be uniquely attributed to an increased barrier height due to enhance electron reflection. It is proposed here that the MQB improves the performance of laser diodes by proventing the diffusion of zinc into the active region of the laser. It is also proposed that the trapped zinc in the MQB region of the laser diode locally increases the p-type doping bringing the quasi-Fermi level for holes closer to the valence band edge thus increasing the barrier to electron overflow in the conduction band.

Intrinsic dielectric response in ferroelectric nano-capacitors

Measurements on 'free-standing' single-crystal barium titanate capacitors with thickness down to 75 nm show a dielectric response typical of large single crystals, rather than conventional thin films. There is a notable absence of any broadening or temperature shift of the dielectric peak or loss tangent. Peak dielectric constants of similar to25 000 are observed, and Curie-Weiss analysis demonstrates first order transformation behaviour. This is in dramatic contrast to results on conventionally deposited thin film capacitor heterostructures, which show large dielectric peak broadening and temperature shifts (e.g. Parker et al 2002 Appl. Phys. Lett. 81 340), as well as an apparent change in the nature-of the paraelectric-ferroelectric transition from first to second order. Our data are compatible with a recent model by Bratkovsky and Levanyuk (2004 Preprint cond-mat/0402100), which attributes dielectric peak broadening to gradient terms that will exist in any thin film capacitor heterostructure. The observed recovery of first order transformation behaviour is consistent with the absence of significant substrate clamping in our experiment, as modelled by Pertsev et al (1998,Phys. Rev. Lett. 80 1988), and illustrates that the second order behaviour seen in conventionally deposited thin films cannot be attributed to the effects of reduced dimensionality in the system, nor to the influence of an intrinsic universal interfacial capacitance associated with the electrode- ferroelectric interface.

The effect of tungsten trioxide thin films at ferroelectric-electrode boundaries on fatigue behaviour

A conventional thin film capacitor heterostructure, consisting of sol-gel deposited lead zirconium titanate (PZT) layers with sputtered platinum top and bottom electrodes, was subjected to fatiguing pulses at a variety of frequencies. The fatigue characteristics were compared to those of a similarly processed capacitor in which a ~20nm tungsten trioxide layer had been deposited, using pulsed laser deposition, between the ferroelectric and upper electrode. The expectation was that, because of its ability to accommodate considerable oxygen non-stoichiometry, tungsten trioxide (WO3) might act as an efficient sink for any oxygen vacancies flushed to the electrode-ferroelectric boundary layer during repetitive switching, and hence would improve the fatigue characteristics of the thin film capacitor. However, it was found that, in general, the addition of tungsten trioxide actually increases the rate of fatigue. It appears that any potential benefit from the WO3, in terms of absorbing oxygen vacancies, is far outweighed by it causing dramatically increased charge injection in the system.

Implementação de WDM com 4 canais no espetro do visível

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

Sistema WDM de 4 canais

Trabalho Final de Mestrado para obtenção do grau de Mestre em Engenharia de Electrónica e Telecomunicações

Demux devices based on A-SiC:H

In this paper we present results about the functioning of a multilayered a-SiC:H heterostructure as a device for wavelength-division demultiplexing of optical signals. The device is composed of two stacked p-i-n photodiodes, both optimized for the selective collection of photogenerated carriers. Band gap engineering was used to adjust the photogeneration and recombination rates profiles of the intrinsic absorber regions of each photodiode to short and long wavelength absorption and carrier collection in the visible spectrum. The photocurrent signal using different input optical channels was analyzed at reverse and forward bias and under steady state illumination. This photocurrent is used as an input for a demux algorithm based on the voltage controlled sensitivity of the device. The device functioning is explained with results obtained by numerical simulation of the device, which permit an insight to the internal electric configuration of the double heterojunction.These results address the explanation of the device functioning in the frequency domain to a wavelength tunable photocapacitance due to the accumulation of space charge localized at the internal junction. The existence of a direct relation between the experimentally observed capacitive effects of the double diode and the quality of the semiconductor materials used to form the internal junction is highlighted.

Analysis of Terahertz Detection with A 2D Hot-Electron Quantum Well Detector

The operation of a previously proposed terahertz (THZ) detector is formulated in detail. The detector is based on the hot-electron effect of the 2D electron gas (2DEG) in the quantum well (QW) of a GaAs/AIGaAs heterostructure. The interaction between the THz radiation and the 2DEG, the current enhancement due to hot -electron effect, and the noise performance of the detector are analyzed

Hybrid Multiferroic Nanostructure with Magnetic−Dielectric Coupling

The development of methods to economically synthesize single wire structured multiferroic systems with room temperature spin−charge coupling is expected to be important for building next-generation multifunctional devices with ultralow power consumption. We demonstrate the fabrication of a single nanowire multiferroic system, a new geometry, exhibiting room temperature magnetodielectric coupling. A coaxial nanotube/nanowire heterostructure of barium titanate (BaTiO3, BTO) and cobalt (Co) has been synthesized using a template-assisted method. Room temperature ferromagnetism and ferroelectricity were exhibited by this coaxial system, indicating the coexistence of more than one ferroic interaction in this composite system

Immobilisation of eta(3)-allyidicarbonyl complexes of Mo-II with bidentate nitrogen ligands within aluminium-pillared clays

Molybdenum(II) complexes [MOX(CO)(2)(eta(3)-allyl)(CH3CN)(2)] (X = Cl or Br) were encapsulated in an aluminium-pillared natural clay or a porous clay heterostructure and allowed to react with bidentate diimine ligands. All the materials obtained were characterised by several solid-state techniques. Powder XRD, and Al-27 and Si-29 MAS NMR were used to investigate the integrity of the pillared clay during the modification treatments. C-13 CP MAS NMR, FTIR, elemental analyses and low-temperature nitrogen adsorption showed that the immobilisation of the precursor complexes was successful as well as the in situ ligand-substitution reaction. The new complex [MoBr(CO)(2)(eta(3)-allyl)(2-aminodipyridyl)] was characterised by single-crystal X-ray diffraction and spectroscopic techniques, and NMR studies were used to investigate its fluxional behaviour in solution. The prepared materials are active for the oxidation of cis-cyclooctene using tert-butyl hydroperoxide as oxidant, though the activity of the isolated complexes is higher. ((c) Wiley-VCH Verlag GmbH & Co. KGaA, 69451 Weinheim, Germany, 2008).

Wannier-function approach to electron states in superlattices under an electric field

Electron quasi-stationary states in a periodic semiconductor superlattice are calculated, as linear combinations of Wannier-Kohn functions, for different values of an electric field applied along the heterostructure. A comparison with an alternative approach, which is based on the localization of quasi-stationary states, is performed. (C) 2004 Elsevier Ltd. All rights reserved.

Tailoring of heterostructures in a SnO2/TiO2 system by the oriented attachment mechanism

In order to verify the possibility of forming a heterostructure-i.e., a nanoparticle tailored by the junction of two or more different materials-through the oriented attachment (OA) mechanism, experiments with rutile TiO2 and cassiterite SnO2 as candidate materials were done, since they have similar crystallographic parameters. The experiments were carried out in hydrothermal conditions and in an in situ observation at the high resolution transmission electron microscopy. The results showed the formation of TiO2/SnO2 heterostructures, confirming the coexistence of rotation-alignment and oriented collision mechanisms, hypothesis of OA behavior proposed in previous theoretical works.

Magnetic-field and confinement effects on the effective Land, g factor in AlxGa1-xAs parabolic quantum wells

The magnetic-field and confinement effects on the Land, factor in AlxGa1-xAs parabolic quantum wells under magnetic fields applied parallel or perpendicular to the growth direction are theoretically studied. Calculations are performed in the limit of low temperatures and low electron density in the heterostructure. The g factor is obtained by taking into account the effects of non-parabolicity and anisotropy of the conduction band through the 2 x 2 Ogg-McCombe Hamiltonian, and by including the cubic Dresselhaus spin-orbit term. A simple formula describing the magnetic-field dependence of the effective Land, factor is analytically derived by using the Rayleigh-Schrodinger perturbation theory, and it is found in good agreement with previous experimental studies devoted to understand the behavior of the g factor, as a function of an applied magnetic field, in semiconductor heterostructures. Present numerical results for the effective Land, factor are shown as functions of the quantum-well parameters and magnetic-field strength, and compared with available experimental measurements.

Suppression of Anderson localization of light in one-dimensional disordered photonic superlattices

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)