982 resultados para Effect of temperature


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The effects of preservatives like fat coated sorbic acid (FCSA) and glucono-deltalactone (D-lactone), both separately and in combination, on the shelf life of high temperature (115.6°C for 20 min) processed fish sausage, stored at three different temperatures namely, ambient (28±2° C), cooler storage (2±2°C) and refrigerator (10±2° C) were studied. Whereas the control (without preservative), FCSA, D-lactone and FCSA + D-lactone treated samples could be stored for 9, 11 and 13 days respectively at ambient temperature, those stored at lower temperatures were found to be in acceptable condition for 70 and 80 days respectively. Organoleptic evaluation of taste, flavour the products carried out by panelists revealed that FCSA and FCSA + D-lactone treated samples were unacceptable with regard to the taste, flavour and texture. However, the taste flavour and texture of the control and D-lactone treated samples were in acceptable condition.

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P. monodon larvae were studied for the effects of temperature, ammonia, and nitrite on survival. Toxicity levels of nitrite were found to vary with larval stage. Larvae could tolerate ammonia up to about 10 ppm, with the effect more clearly shown by the zoea stage. Survival and growth were not significantly affected by temperature, although moulting was enhanced at temperatures higher than 29 C. Larvae of P. monodon have lower tolerance toward nitrite and ammonia compared to postlarvae. Although high survival was obtained at low levels of nitrite and ammonia, it is still necessary to know their effects on metabolism, in order to examine possible biochemical parameters for diagnosing sublethal toxicity or stress.

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Laser-assisted cold spray (LCS) is a new coating and fabrication process which combines some advantages of CS: solid-state deposition, retain their initial composition and high build rate with the ability to deposit materials which are either difficult or impossible to deposit using cold spray alone. Stellite 6 powder is deposited on medium carbon steels by LCS using N 2 as carrier gas pressure. The topography, cross section thickness, structure of the coatings is examined by SEM, optical microscopy, EDX. The results show that thickness and fluctuation of coating are improved with increased deposition site temperature. Porosity of coating is affected by N 2 and deposition site temperature. In this paper, it presents optimal coating using N 2 at a pressure of 3 MPa and temperature of 450°C and deposition site temperature of 1100°C.

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The sidewall facets of GaAs nanowires (NWs) were studied. It has been found that the sidewalls of GaAs NWs grown at 450 °C are {112} facets. However, the sidewalls of GaAs NWs start to become {110} during the postannealing at 650 °C for 30 min. © 2010 IEEE.

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The present study was carried out to investigate the influence of water temperature on the growth performance and digestive enzyme (pepsin, trypsin and lipase) activities of Chinese longsnout catfish. Triplicate groups of Chinese longsnout catfish (35.6 +/- 0.48 g, mean +/- SE) were reared at different water temperatures (20, 24, 28 and 32 degrees C). The feeding rate (FR), specific growth rate (SGR) and feed efficiency ratio (FER) were significantly affected by water temperatures and regression relationships between water temperature and FI, SGR as well as FER were expressed as FR=-0.016T2+0.91T-10.88 (n=12, R2=0.8752), SGR=-0.026T2+1.39T-17.29 (n=12, R2=0.7599) and FER=-0.013T2+0.70T-8.43 (n=12, R2=0.7272). Based on these, the optimum temperatures for FR, SGR and FER were 27.66, 26.69 and 26.44 degrees C respectively. The specific activities of digestive enzymes at 24 or 28 degrees C were significantly higher than that at 20 or 32 degrees C. In addition, there was a significant linear regression between FR or SGR and specific activities of pepsin and lipase, which indicated that pepsin and lipase played important roles in regulating growth through nutrient digestion in Chinese longsnout catfish.

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Body length, instar duration, fecundity, and survival rate of Moina irrasa from a subtropical Chinese lake were studied at three food concentrations (4, 8, and 40 mg/L, wet weight) and six temperatures (10, 15, 20, 25, 30, and 35degreesC) in the laboratory. Body length tended to decrease with increase of temperature, while the trend was reversed as food concentration rose. M. irrasa had three juvenile instars, except there were four at 10degreesC, and the number of adult instars showed great variation (3-15). Water temperature and food concentration both affected the duration time of adult instars. The largest broods were from the third to sixth adult instars, depending on food and temperature, and the mean highest number of offspring per brood was 56 at 25degreesC. A significant relationship between body length and brood size appeared at high (40 mg/L) and medium (8 mg/L) food concentrations, while there was no significant relationship at low food concentration except at 25 degreesC. The intrinsic rate of population increase ranged between 0.104 and 1.825 ind./day.

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Population parameters of Daphnia rosea were studied at various concentrations of Chlorella sp. (0.25, 0.75 and 3.0 mg C l(-1)) at several temperatures (20, 25, 28, and 30 degrees C) in the laboratory. Although there were some differences in the degrees of the effects of the various temperature-food combinations, both food and temperature exerted influences on almost all of the main population parameters of D. rosea. At a water temperature of 28 degrees C, growth and reproduction were reduced, and at the lowest food level (0.25 mgC l(-1)), reproduction failed. D, rosea did not survive at 30 degrees C in spite of abundant food supply, indicating that 30 degrees C is a physiological limit. A positive relationship between body length and brood size was recognized at high and medium food levels. The slope of the regression was the highest at the highest food level and at the lowest temperature (20 degrees C). The low food level exerted a negative influence on the net reproductive rate by lowering the size of egg-bearing females, by decreasing the brood size of each size class, by decreasing the brood number per female, and by increasing the period of empty brood chamber. High water temperature (28 degrees C) also exerted a negative influence on the net reproductive rate in a similar way. For the better understanding of the key factors driving the midsummer dynamics of daphnids in the field, it may be of crucial importance to compare the population parameters of the field populations with experimentally derived values under controlled conditions of food concentration and temperature.

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Under normal incidence of circularly polarized light at room temperature, a charge current with swirly distribution has been observed in the two-dimensional electron gas in Al0.25Ga0.75N/GaN heterostructures. We believe that this anomalous charge current is produced by a radial spin current via the reciprocal spin Hall effect. It suggests a new way to research the reciprocal spin Hall effect and spin current on the macroscopic scale and at room temperature.

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Low temperature (LT) AlN interlayers were used to effectively reduce the tension stress and micro-cracks on the surface of the GaN epilayer grown on Si (111) substrate. Optical Microscopy (OM), Atomic Force Microscopy (AFM), Surface Electron Microscopy (SEM) and X-Ray Diffraction (XRD) were employed to characterize these samples grown by metal-organic chemical vapor deposition (MOCVD). In addition, wet etching method was used to evaluate the defect of the GaN epilayer. The results demonstrate that the morphology and crystalline properties of the GaN epilayer strongly depend on the thickness, interlayer number and growth temperature of the LT AlN interlayer. With the optimized LT AlN interlayer structures, high quality GaN epilayers with a low crack density can be obtained. (C) 2008 Elsevier Ltd. All rights reserved.

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The effect of the growth temperature on the surface and interface quality for the GaN/AlN multiquantum well (MQW) layer grown by metal-organic vapour chemical deposition is investigated. The obtained GaN/AlN MQW structure is almost coherent to the underlying AlGaN layer at improved growth conditions. With a relatively low growth temperature, the GaN/AlN MQW growth rate increases, the surface roughness reduces considerably and no macro steps are observed, resulting in a better periodicity of MQW.

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Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150A degrees C and 200A degrees C. Ohmic contacts were formed while the growth temperatures were lower than 150A degrees C or higher than 200A degrees C. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers.

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ZnO thin films were prepared on Si (1 11) substrates at various temperatures from 250 to 700 degrees C using pulsed laser deposition (PLD) technique in order to investigate the structural and optical properties of the films. The structural and morphological properties of the films were investigated by XRD and SEM measurements, respectively. The quality of the films was improved with the increase of the temperature. By XRD patterns the FWHMs of the (0 0 2) peaks of the ZnO films became narrower when the temperatures were above 500 degrees C. The FWHMs of the peaks of (0 0 2) of the films were as narrow as about 0. 19 degrees when films were grown at 650 and 700 degrees C. This indicates the superior crystallinity of the films. The optical properties of the films were studied by photoluminescence spectra using a 325 nm He-Cd laser. The two strongest UV peaks were found at 377.9 nm from ZnO films grown at 650 and 700 degrees C. This result is consistent with that of the XRD investigation. Broad bands in visible region from 450 to 550 nm were also observed. Our works suggest that UV emissions have close relations with not only the crystallinity but also the stoichiometry of the ZnO films. (c) 2005 Elsevier Ltd. All rights reserved.

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Vertically well-aligned ZnO nanoridge, nanorod, nanorod-nanowall junction, and nanotip arrays have been successfully synthesized on Si (100) substrates using a pulsed laser deposition prepared ZnO film as seed layer by thermal evaporation method. Experimental results illustrated that the growth of different morphologies of ZnO nanostructures was strongly dependent upon substrate temperature. X-ray diffraction (XRD) and transmission electron microscopy (TEM) studies showed that the ZnO nanostructures were single crystals with a wurtzite structure. Compared with those of the other nanostructures, the photoluminescence (PL) spectrum of nanorod-nanowall junctions showed the largest intensity ratio of ultraviolet (UV) to yellow-green emission and the smallest full-width at half-maximum (FWHM) of the UV peak, reflecting the high optical quality and nearly defect free of crystal structure. The vertical alignment of the nanowire array on the substrate is attributed to the epitaxial growth of the nanostructures from the ZnO buffer layer. The growth mechanism was also discussed in detail. (c) 2006 Elsevier B.V. All rights reserved.

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Various low-temperature (LT) ultra-thin buffer layers have been fabricated on the GaAs (001) substrate. The buffer layer is decoupled from the host substrate by introducing low-temperature defects. The 400 nm In0.25Ga0.75As films were grown on these substrates to test the 'compliant' effects of the buffer layers. Atomic force microscopy, photoluminescence, double crystal x-ray diffraction and transmission electron microscopy were used to estimate the quality of the ln(0.25)Ga(0.75)As layer. The measurements indicated that the misfit strains in the epilayer can be accommodated by the LT ultra-thin buffer layer. The strain accommodation effects of the LT defects have been discussed in detail.