Self-aligned split gate electrodes fabricated on suspended carbon nanotubes

We describe the fabrication of self-aligned split gate electrodes on suspended multiwalled carbon nanotube structures. A suspended multiwalled carbon nanotube structure was used as an evaporation mask for the deposition of metal electrodes resulting in the formation of discontinuous wire deposition. The metal deposits on the nanotubes are removed with lift-off due to the poor adhesion of metal to the nanotube surface. Using Al sacrificial layers, it was possible to fabricate self-aligned contact electrodes and control electrodes nanometers from the suspended carbon nanotubes with a single lithography step. It was also shown that the fabrication technique may also be used to form nano-gaped contact electrodes. The technique should prove useful for the fabrication of nano-electromechanical systems. © 2003 Materials Research Society.

Efficient line launch for bandwidth improvement of 10 Gbit/s multimode fibre links using elliptical Gaussian beam

A novel elliptical Gaussian beam line launch is shown to allow improved system capacity for high speed multimode fibre links. This launch maintains higher bandwidth than dual launch even with misalignment of ±6 μm despite not requiring testing at installation. ©2010 IEEE.

Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by chemical vapor deposition and its gate configuration was changed while determining its transistor characteristics to ensure that the measurements were not a function of different chirality or diameter CNTs. The bottom-gate exposed CNT FET utilized 900 nm SiO2 as the gate insulator. This CNT FET was then covered with TiO2 to form the bottom-gate covered channel CNT FET. Finally, the top-gate CNT FET was fabricated and the device utilized TiO 2 (K ∼ 80, equivalent oxide thickness=0.25 nm) as the gate insulator. Of the three configurations investigated, the top-gate device exhibited best subthreshold slope (67-70 mV/dec), highest transconductance (1.3 μS), and negligible hysteresis in terms of threshold voltage shift. © 2006 American Institute of Physics.

Carbon nanotube Schottky diode and directionally dependent field-effect transistor using asymmetrical contacts

We demonstrate the fabrication and operation of a carbon nanotube (CNT) based Schottky diode by using a Pd contact (high-work-function metal) and an Al contact (low-work-function metal) at the two ends of a single-wall CNT. We show that it is possible to tune the rectification current-voltage (I-V) characteristics of the CNT through the use of a back gate. In contrast to standard back gate field-effect transistors (FET) using same-metal source drain contacts, the asymmetrically contacted CNT operates as a directionally dependent CNT FET when gated. While measuring at source-drain reverse bias, the device displays semiconducting characteristics whereas at forward bias, the device is nonsemiconducting. © 2005 American Institute of Physics.

Self-aligned, gated arrays of individual nanotube and nanowire emitters

We demonstrate the production of integrated-gate nanocathodes which have a single carbon nanotube or silicon nanowire/whisker per gate aperture. The fabrication is based on a technologically scalable, self-alignment process in which a single lithographic step is used to define the gate, insulator, and emitter. The nanotube-based gated nanocathode array has a low turn-on voltage of 25 V and a peak current of 5 μA at 46 V, with a gate current of 10 nA (i.e., 99% transparency). These low operating voltage cathodes are potentially useful as electron sources for field emission displays or miniaturizing electron-based instrumentation.

Symmetrical 2-D Hermite-Gaussian square launch for high bit rate transmission in multimode fiber links

A 2-D Hermite-Gaussian square launch is demonstrated to show improved systems capacity over multimode fiber links. It shows a bandwidth improvement over both center and offset launches and exhibits ±5 μm misalignment tolerance. © 2011 Optical Society of America.

Hydrodynamic interaction between two vertical cylinders in water waves

The hydrodynamic interaction between two vertical cylinders in water waves is investigated based on the linearized potential flow theory. One of the two cylinders is fixed at the bottom while the other is articulated at the bottom and oscillates with small amplitudes in the direction of the incident wave. Both the diffracted wave and the radiation wave are studied in the present paper. A simple analytical expression for the velocity potential on the surface of each cylinder is obtained by means of Graf's addition theorem. The wave-excited forces and moments on the cylinders, the added masses and the radiation damping coefficients of the oscillating cylinder are all expressed explicitly in series form. The coefficients of the series are determined by solving algebraic equations. Several numerical examples are given to illustrate the effects of various parameters, such as the separation distance, the relative size of the cylinders, and the incident angle, on the first-order and steady second-order forces, the added masses and radiation-damping coefficients as well as the response of the oscillating cylinder.